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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Case Code (Metric) | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4884BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4884bdyt1e3-datasheets-0139.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 13 Weeks | 506.605978mg | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 8 ns | 11ns | 8 ns | 22 ns | 16.5A | 20V | SILICON | 30V | 30V | 2.5W Ta 4.45W Tc | N-Channel | 1525pF @ 15V | 9m Ω @ 10A, 10V | 3V @ 250μA | 16.5A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJ910AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.007Ohm | 42 mJ | 2 N-Channel (Dual) | 1869pF @ 15V | 7m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7160DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7160dpt1ge3-datasheets-0207.pdf | PowerPAK® SO-8 | Lead Free | 5 | 8.7MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | R-PDSO-C5 | 29 ns | 115ns | 21 ns | 43 ns | 17.8A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 60A | 20 mJ | 30V | N-Channel | 2970pF @ 15V | 8.7m Ω @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 66nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||
| SIZ902DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz902dtt1ge3-datasheets-1531.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | 8 | EAR99 | Tin | No | 66W | SIZ902 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 10ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 29W 66W | 50A | 16 mJ | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SI3407DV-T1-E3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3407dvt1ge3-datasheets-9665.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | 6 | 1 | Single | 2W | 1 | 6-TSOP | 1.67nF | 32 ns | 62ns | 38 ns | 53 ns | 7.5A | 12V | 20V | 2W Ta 4.2W Tc | 24mOhm | P-Channel | 1670pF @ 10V | 24mOhm @ 7.5A, 4.5V | 1.5V @ 250μA | 8A Tc | 63nC @ 10V | 24 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ904E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjq904et1ge3-datasheets-2347.pdf | PowerPAK® 8 x 8 Dual | 4 | 14 Weeks | No SVHC | 6 | unknown | YES | 135W | SINGLE | GULL WING | 2 | R-PSSO-G4 | 100A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 75W | 300A | 0.0034Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.4m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 75nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1405BDH-T1-E3 | Vishay Siliconix | $0.07 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405bdht1e3-datasheets-6571.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 7.512624mg | 112mOhm | 6 | No | 1 | Single | 1.47W | 1 | SC-70-6 (SOT-363) | 305pF | 10 ns | 26ns | 26 ns | 16 ns | 1.6A | 8V | 8V | 1.47W Ta 2.27W Tc | 205mOhm | P-Channel | 305pF @ 4V | 112mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 1.6A Tc | 5.5nC @ 4.5V | 112 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIA533EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia533edjt1ge3-datasheets-4354.pdf | PowerPAK® SC-70-6 Dual | 800μm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 34MOhm | 6 | EAR99 | 7.8W | C BEND | NOT SPECIFIED | SIA533 | 6 | 2 | Single | NOT SPECIFIED | 7.8W | 2 | Other Transistors | Not Qualified | 150°C | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | N and P-Channel | 420pF @ 6V | 400 mV | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||
| SI7452DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7452dpt1ge3-datasheets-6619.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8.3mOhm | 1 | Single | PowerPAK® SO-8 | 45 ns | 15ns | 40 ns | 90 ns | 11.5A | 20V | 60V | 1.9W Ta | 8.3mOhm | 60V | N-Channel | 8.3mOhm @ 19.3A, 10V | 4.5V @ 250μA | 11.5A Ta | 160nC @ 10V | 8.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4946BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2.4W | GULL WING | 260 | SI4946 | 8 | 2 | Dual | 40 | 2.4W | 2 | 175°C | 10 ns | 12ns | 10 ns | 25 ns | 6.5A | 20V | SILICON | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 3.7W | 5.3A | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7404DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7404dnt1e3-datasheets-6658.pdf | PowerPAK® 1212-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1212 | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 27 ns | 39ns | 33 ns | 64 ns | 8.5A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 1.5W Ta | 40A | N-Channel | 13m Ω @ 13.3A, 10V | 1.5V @ 250μA | 8.5A Ta | 30nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||
| SI4804CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4804cdyt1ge3-datasheets-6283.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.2W | GULL WING | 260 | SI4804 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Power | 17 ns | 13ns | 9 ns | 19 ns | 7.1A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4V | 8A | 30V | 2 N-Channel (Dual) | 865pF @ 15V | 2.4 V | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 8A | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||
| SI4324DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4324dyt1ge3-datasheets-6256.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 3.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 3.5W | 1 | FET General Purpose Power | 30 ns | 135ns | 13 ns | 30 ns | 24A | 20V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 36A | 70A | 30V | N-Channel | 3510pF @ 15V | 3.2m Ω @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQJB80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb80ept1ge3-datasheets-7905.pdf | PowerPAK® SO-8 Dual | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | 48W | 2 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 84A | 0.019Ohm | 80V | 2 N-Channel (Dual) | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1406DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | FET General Purpose Powers | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | N-Channel | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SIZ346DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz346dtt1ge3-datasheets-9350.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16W 16.7W | 30V | 2 N-Channel (Dual) | 325pF @ 15V 650pF @ 15V | 28.5m Ω @ 10A, 10V, 11.5m Ω @ 14.4A, 10V | 2.2V @ 250μA, 2.4V @ 250μA | 17A Tc 30A Tc | 5nC @ 4.5V, 9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4190DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4190dyt1ge3-datasheets-2143.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8.8MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 7.8W | DUAL | GULL WING | 260 | 8 | Single | 30 | 7.8W | 1 | FET General Purpose Power | 12 ns | 13ns | 11 ns | 40 ns | 20A | 20V | SWITCHING | 100V | N-Channel | 2000pF @ 50V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 20A Tc | 58nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| SIZ350DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-siz350dtt1ge3-datasheets-0321.pdf | 8-PowerWDFN | 14 Weeks | 8-Power33 (3x3) | 30V | 3.7W Ta 16.7W Tc | 2 N-Channel (Dual) | 940pF @ 15V | 6.75mOhm @ 15A, 10V | 2.4V @ 250μA | 18.5A Ta 30A Tc | 20.3nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7635DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7635dpt1ge3-datasheets-2361.pdf | PowerPAK® SO-8 | Lead Free | 5 | 506.605978mg | Unknown | 4.9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5W | 1 | Other Transistors | R-PDSO-C5 | 19 ns | 10ns | 13 ns | 65 ns | -40A | 16V | SILICON | DRAIN | SWITCHING | 20V | -2.2V | 5W Ta 54W Tc | 70A | -20V | P-Channel | 4595pF @ 10V | -2.2 V | 4.9m Ω @ 26A, 10V | 2.2V @ 250μA | 40A Tc | 143nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| SI1023CX-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1023cxt1ge3-datasheets-1220.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 220mW | FLAT | 260 | 6 | 30 | 220mW | 2 | Other Transistors | 9 ns | 10ns | 8 ns | 10 ns | 450mA | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 0.45A | 1.038Ohm | 2 P-Channel (Dual) | 45pF @ 10V | 756m Ω @ 350mA, 4.5V | 1V @ 250μA | 2.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SIB488DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib488dkt1ge3-datasheets-2431.pdf | PowerPAK® SC-75-6L | Lead Free | 6 | 15 Weeks | 95.991485mg | 20MOhm | 6 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 6 | 1 | Single | 40 | 2.4W | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 20 ns | 9A | 8V | SILICON | DRAIN | SWITCHING | 12V | 2.4W Ta 13W Tc | 9A | 35A | N-Channel | 725pF @ 6V | 20m Ω @ 6.3A, 4.5V | 1V @ 250μA | 9A Tc | 20nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||
| SIA913ADJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia913adjt1ge3-datasheets-3734.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 750μm | 2.05mm | 6 | 14 Weeks | 28.009329mg | yes | EAR99 | Tin | No | 6.5W | 260 | SIA913 | 3 | 2 | Dual | 40 | 2 | Other Transistors | S-XDSO-N6 | 20 ns | 25ns | 25 ns | 30 ns | 4.3A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 4.5A | 0.061Ohm | -12V | 2 P-Channel (Dual) | 590pF @ 6V | 61m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4.5A | 20nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||
| SIS456DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis456dnt1ge3-datasheets-4722.pdf | PowerPAK® 1212-8 | 5 | 15 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.8W | 1 | FET General Purpose Power | S-PDSO-C5 | 20 ns | 25ns | 12 ns | 25 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1V | 3.8W Ta 52W Tc | 30V | N-Channel | 1800pF @ 15V | 5.1m Ω @ 20A, 10V | 2.2V @ 250μA | 35A Tc | 55nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIA517DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sia517djt1ge3-datasheets-4425.pdf | PowerPAK® SC-70-6 Dual | 2.05mm | 800μm | 2.05mm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 6 | yes | EAR99 | e3 | Matte Tin (Sn) | 6.5W | NO LEAD | 260 | SIA517 | 6 | 2 | 40 | 1.9W | 2 | Other Transistors | Not Qualified | 150°C | 30 ns | 25ns | 25 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 12V | N and P-Channel | 500pF @ 6V | 400 mV | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 15nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||
| SI7866ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7866adpt1e3-datasheets-6244.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | Unknown | 2.4MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 18 ns | 105ns | 9 ns | 49 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 800mV | 5.4W Ta 83W Tc | 35A | 70A | 20V | N-Channel | 5415pF @ 10V | 2.4m Ω @ 20A, 10V | 2.2V @ 250μA | 40A Tc | 125nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SI4564DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4564dyt1ge3-datasheets-5645.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.2W | DUAL | GULL WING | 260 | SI4564 | 8 | 2 | 40 | 2W | 2 | Other Transistors | 150°C | 42 ns | 40ns | 15 ns | 40 ns | 10A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 800mV | 3.1W 3.2W | 8A | N and P-Channel | 855pF @ 20V | 800 mV | 17.5m Ω @ 8A, 10V | 2V @ 250μA | 10A 9.2A | 31nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||
| SIE862DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sie862dft1ge3-datasheets-3210.pdf | 10-PolarPAK® (U) | 4 | 10 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | 260 | 10 | 30 | 1 | FET General Purpose Power | R-PDSO-N4 | 30 ns | 20ns | 15 ns | 40 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 30A | 0.0038Ohm | 80 mJ | N-Channel | 3100pF @ 15V | 3.2m Ω @ 20A, 10V | 2.2V @ 250μA | 50A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SI5948DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-si5948dut1ge3-datasheets-6607.pdf | PowerPAK® ChipFET™ Dual | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 40V | 7W | 2 N-Channel (Dual) | 165pF @ 20V | 82m Ω @ 5A, 10V | 2.5V @ 250μA | 6A Tc | 2.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-09P-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0309pge3-datasheets-3255.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 1.437803g | 9.5mOhm | 1 | Single | 63A | 20V | 30V | 7.5W Ta 65.2W Tc | N-Channel | 2200pF @ 25V | 9.5m Ω @ 20A, 10V | 3V @ 250μA | 63A Tc | 16nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3993CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3993cdvt1ge3-datasheets-9330.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | EAR99 | Tin | unknown | e3 | 1.4W | GULL WING | NOT SPECIFIED | 6 | 2 | Dual | NOT SPECIFIED | 1.14W | 2 | Other Transistors | Not Qualified | 10 ns | 16ns | 12 ns | 17 ns | -2.9A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -1.2V | MO-193AA | 0.111Ohm | -30V | 2 P-Channel (Dual) | 210pF @ 15V | -1.2 V | 111m Ω @ 2.5A, 10V | 2.2V @ 250μA | 2.9A | 8nC @ 10V | Standard |
