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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Isolation Voltage | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIS890DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis890dnt1ge3-datasheets-6599.pdf | PowerPAK® 1212-8 | 3.4mm | 1.17mm | 3.4mm | Lead Free | 5 | 14 Weeks | Unknown | 23.5MOhm | 8 | EAR99 | No | DUAL | C BEND | 1 | 3.7W | 1 | FET General Purpose Powers | 150°C | S-PDSO-C5 | 9 ns | 10ns | 8 ns | 16 ns | 8.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1.5V | 3.7W Ta 52W Tc | 30A | 60A | 5 mJ | 100V | N-Channel | 802pF @ 50V | 23.5m Ω @ 10A, 10V | 3V @ 250μA | 30A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIC473EVB-B | Vishay Siliconix |
Min: 1 Mult: 1 |
download | /files/vishaysiliconix-sic473evbb-datasheets-7874.pdf | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4182EY-T1_GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4182eyt1ge3-datasheets-7316.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | yes | EAR99 | No | 16 ns | 10ns | 8 ns | 57 ns | 32A | 20V | 30V | 7.1W Tc | N-Channel | 5400pF @ 15V | 3.8m Ω @ 14A, 10V | 2.5V @ 250μA | 32A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30429-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4062DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4062dyt1ge3-datasheets-7887.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 506.605978mg | No SVHC | 8 | EAR99 | No | DUAL | GULL WING | 1 | Single | 1 | 52 ns | 105ns | 10 ns | 26 ns | 32.1A | 20V | SWITCHING | 7.8W Tc | 0.0042Ohm | 60V | N-Channel | 3175pF @ 30V | 4.2m Ω @ 20A, 10V | 2.6V @ 250μA | 32.1A Tc | 60nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPC60LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpc60lc-datasheets-0420.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 400mOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 3.5nF | 17 ns | 57ns | 38 ns | 43 ns | 16A | 30V | 600V | 4V | 280W Tc | 400mOhm | 600V | N-Channel | 3500pF @ 25V | 4 V | 400mOhm @ 9.6A, 10V | 4V @ 250μA | 16A Tc | 120nC @ 10V | 400 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SI7149DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7149dpt1ge3-datasheets-8314.pdf | PowerPAK® SO-8 | 5.15mm | 1.04mm | 6.15mm | Lead Free | 5 | 14 Weeks | Unknown | 5.2MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 40 | 69W | 1 | Other Transistors | R-XDSO-C5 | 100 ns | 150ns | 110 ns | 230 ns | 23.7A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | -1.2V | 69W Tc | 50A | 70A | 20 mJ | -20V | P-Channel | 4590pF @ 15V | 5.2m Ω @ 15A, 10V | 2.5V @ 250μA | 50A Tc | 147nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||
| SIA462DJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia462djt4ge3-datasheets-5310.pdf | PowerPAK® SC-70-6 | PowerPAK® SC-70-6 Single | 30V | 3.5W Ta 19W Tc | N-Channel | 570pF @ 15V | 18mOhm @ 9A, 10V | 2.4V @ 250μA | 12A Ta 12A Tc | 17nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR120TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-irlr120trlpbf-datasheets-9045.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 9.8 ns | 64ns | 27 ns | 21 ns | 7.7A | 10V | SILICON | DRAIN | SWITCHING | 42W Tc | 0.27Ohm | 100V | N-Channel | 490pF @ 25V | 270m Ω @ 4.6A, 5V | 2V @ 250μA | 7.7A Tc | 12nC @ 5V | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||
| IRFD9220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfd9220-datasheets-7306.pdf | -200V | -560mA | 4-DIP (0.300, 7.62mm) | 6.29mm | 3.37mm | 5mm | Lead Free | 8 Weeks | Unknown | 1.5Ohm | 4 | No | Single | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | -560mA | 20V | 200V | -4V | 1W Ta | 1.5Ohm | 200V | P-Channel | 340pF @ 25V | 1.5Ohm @ 340mA, 10V | 4V @ 250μA | 560mA Ta | 15nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIR158DP-T1-RE3 | Vishay Siliconix | $1.49 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir158dpt1re3-datasheets-9659.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 83W Tc | 1.45mOhm | N-Channel | 4980pF @ 15V | 1.8mOhm @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihb12n60ege3-datasheets-3139.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 380MOhm | 3 | AVALANCHE RATED | No | GULL WING | 4 | 1 | Single | 147W | 1 | FET General Purpose Powers | R-PSSO-G2 | 14 ns | 38ns | 38 ns | 35 ns | 12A | 20V | SILICON | SWITCHING | 600V | 600V | 2V | 147W Tc | 27A | N-Channel | 937pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 12A Tc | 58nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFR320TRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfu320pbf-datasheets-8190.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 1.8Ohm | 3 | No | 1 | Single | 2.5W | 1 | D-Pak | 350pF | 10 ns | 14ns | 13 ns | 30 ns | 3.1A | 20V | 400V | 42W Tc | 1.8Ohm | 400V | N-Channel | 350pF @ 25V | 1.8Ohm @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 20nC @ 10V | 1.8 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFIBF30GPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfibf30g-datasheets-8586.pdf | 900V | 1.9A | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 3.7Ohm | 3 | 1 | Single | 35W | 1 | TO-220-3 | 1.2nF | 2.5kV | 14 ns | 25ns | 30 ns | 90 ns | 1.9A | 20V | 900V | 900V | 4V | 35W Tc | 3.7Ohm | 900V | N-Channel | 1200pF @ 25V | 4 V | 3.7Ohm @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFL214TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfl214trpbf-datasheets-2472.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 8 Weeks | 250.212891mg | Unknown | 2Ohm | 4 | No | 1 | 2W | 1 | SOT-223 | 140pF | 7 ns | 7.6ns | 7 ns | 16 ns | 790mA | 20V | 250V | 2W Ta 3.1W Tc | 2Ohm | 250V | N-Channel | 140pF @ 25V | 2 V | 2Ohm @ 470mA, 10V | 4V @ 250μA | 790mA Tc | 8.2nC @ 10V | 2 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | 100V | 14A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 160mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 670pF | 10 ns | 30ns | 20 ns | 23 ns | 14A | 20V | 100V | 100V | 4V | 88W Tc | 280 ns | 270mOhm | 100V | N-Channel | 670pF @ 25V | 4 V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 160 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SI7317DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7317dnt1ge3-datasheets-3381.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 1.2Ohm | EAR99 | e3 | Matte Tin (Sn) | DUAL | C BEND | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | S-PDSO-C5 | 7 ns | 11ns | 10 ns | 11 ns | 2.8A | 30V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 19.8W Tc | 2A | 0.8 mJ | P-Channel | 365pF @ 75V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.8A Tc | 9.8nC @ 10V | 6V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SI5424DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si5424dct1e3-datasheets-5453.pdf | 8-SMD, Flat Lead | 8 | 14 Weeks | 84.99187mg | Unknown | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 6A | 25V | SILICON | SWITCHING | 2.3V | 2.5W Ta 6.25W Tc | 6A | 40A | 0.024Ohm | 30V | N-Channel | 950pF @ 15V | 24m Ω @ 4.8A, 10V | 2.3V @ 250μA | 6A Tc | 32nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| SIR880DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir880dpt1ge3-datasheets-5576.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | C BEND | 260 | 8 | 2 | Dual | 40 | 6.25W | 1 | R-PDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 6.25W Ta 104W Tc | 0.0067Ohm | 80V | N-Channel | 2440pF @ 40V | 1.2 V | 5.9m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 74nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SI8410DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si8410dbt2e1-datasheets-8553.pdf | 4-UFBGA | 21 Weeks | Unknown | 30mOhm | 4 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 5.7A | 20V | 850mV | 780mW Ta 1.8W Tc | N-Channel | 620pF @ 10V | 37m Ω @ 1.5A, 4.5V | 850mV @ 250μA | 16nC @ 8V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR872DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir872dpt1ge3-datasheets-6012.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 6.25W | 1 | FET General Purpose Powers | R-PDSO-F5 | 53.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 1.5V | 6.25W Ta 104W Tc | 45 mJ | N-Channel | 2130pF @ 75V | 18m Ω @ 20A, 10V | 3.5V @ 250μA | 53.7A Tc | 64nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SISA04DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sisa04dnt1ge3-datasheets-1648.pdf | PowerPAK® 1212-8 | 3.1496mm | 1.0668mm | 3.1496mm | Lead Free | 5 | 14 Weeks | Unknown | 2.15mOhm | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 3.7W | 1 | FET General Purpose Powers | S-PDSO-C5 | 24 ns | 20 ns | 30 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 3.7W Ta 52W Tc | 20 mJ | 30V | N-Channel | 3595pF @ 15V | 1.1 V | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||
| IRF840ASTRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irf840astrrpbf-datasheets-6542.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.018nF | 11 ns | 23ns | 19 ns | 26 ns | 8A | 30V | 500V | 125W Tc | 850mOhm | 500V | N-Channel | 1018pF @ 25V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 38nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SISS64DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss64dnt1ge3-datasheets-1951.pdf | PowerPAK® 1212-8S | 1.17mm | 5 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | 1 | NOT SPECIFIED | 4.8W | 1 | 150°C | S-PDSO-N5 | 13 ns | 25 ns | 37A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 57W Tc | 40A | 0.00286Ohm | 45 mJ | 30V | N-Channel | 3420pF @ 15V | 2.1m Ω @ 10A, 10V | 2.2V @ 250μA | 40A Tc | 68nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||
| IRF644STRLPBF | Vishay Siliconix | $2.57 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf644spbf-datasheets-3712.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.3nF | 11 ns | 24ns | 49 ns | 53 ns | 14A | 20V | 250V | 3.1W Ta 125W Tc | 280mOhm | N-Channel | 1300pF @ 25V | 280mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 68nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI2307BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2307bdst1e3-datasheets-7112.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 9 ns | 12ns | 12 ns | 25 ns | 2.5A | 20V | 30V | SILICON | 750mW Ta | 0.078Ohm | -30V | P-Channel | 380pF @ 15V | 78m Ω @ 3.2A, 10V | 3V @ 250μA | 2.5A Ta | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIR880ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sir880adpt1ge3-datasheets-2763.pdf | PowerPAK® SO-8 | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 8.9MOhm | 8 | EAR99 | No | C BEND | 2 | Dual | 5.4W | 1 | FET General Purpose Powers | R-PDSO-C5 | 60A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5.4W Ta 83W Tc | 45 mJ | 80V | N-Channel | 2289pF @ 40V | 6.3m Ω @ 20A, 10V | 3V @ 250μA | 60A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7190DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7190dpt1ge3-datasheets-3307.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 118MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | 30 | 96W | 1 | FET General Purpose Power | R-XDSO-C5 | 13 ns | 12ns | 9 ns | 28 ns | 4.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 250V | 250V | 2V | 5.4W Ta 96W Tc | 30A | N-Channel | 2214pF @ 125V | 118m Ω @ 4.4A, 10V | 4V @ 250μA | 18.4A Tc | 72nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||
| SIE882DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie882dft1ge3-datasheets-4337.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | unknown | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 10 | 1 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 45 ns | 170ns | 85 ns | 65 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 25V | 25V | 5.2W Ta 125W Tc | N-Channel | 6400pF @ 12.5V | 1.4m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 145nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| IRF620PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-irf620pbf-datasheets-8474.pdf | 250V | 5.2A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 800mOhm | 3 | No | 52A | 200V | 1 | Single | 50W | 1 | TO-220AB | 260pF | 7.2 ns | 22ns | 13 ns | 19 ns | 5.2A | 20V | 200V | 2V | 50W Tc | 300 ns | 800mOhm | 200V | N-Channel | 260pF @ 25V | 2 V | 800mOhm @ 3.1A, 10V | 4V @ 250μA | 5.2A Tc | 14nC @ 10V | 800 mΩ | 10V | ±20V |
