| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | Input Type | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Nominal Input Voltage | Current | Reach Compliance Code | Number of Functions | Power Rating | Voltage - Input (Max) | Max Input Voltage | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Supply Voltage-Max (Vsup) | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Max Output Current | Min Input Voltage | Output Voltage | Output Current | Output Type | Voltage - Load | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Function | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Switch Type | Output Configuration | Fault Protection | Current - Output (Max) | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Built-in Protections | Output Current Flow Direction | Turn On Time | Driver Number of Bits | Topology | Synchronous Rectifier | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Voltage - Input (Min) | Avalanche Energy Rating (Eas) | Current - Output | Voltage - Output (Min/Fixed) | Drain to Source Breakdown Voltage | Voltage - Supply (Vcc/Vdd) | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Turn On Time-Max (ton) | Rds On (Typ) | Ratio - Input:Output | Frequency - Switching | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4401DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si4401dyt1ge3-datasheets-6298.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | No SVHC | 15.5mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | Other Transistors | 17 ns | 18ns | 55 ns | 122 ns | -10.5A | 20V | SILICON | 40V | 40V | -1V | 1.5W Ta | P-Channel | -1 V | 15.5m Ω @ 10.5A, 10V | 1V @ 250μA (Min) | 8.7A Ta | 50nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS27DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siss27dnt1ge3-datasheets-9758.pdf | PowerPAK® 1212-8S | 830μm | 5 | 14 Weeks | 8 | EAR99 | No | DUAL | 1 | Single | 4.8W | 1 | 150°C | S-PDSO-N5 | 16 ns | 45ns | 20 ns | 65 ns | -23A | 20V | SILICON | DRAIN | SWITCHING | 30V | 4.8W Ta 57W Tc | 50A | 200A | 0.0056Ohm | -30V | P-Channel | 5250pF @ 15V | 5.6m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5411EDU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5411edut1ge3-datasheets-8742.pdf | PowerPAK® ChipFET™ Single | Lead Free | 19 Weeks | EAR99 | Pure Matte Tin (Sn) | 260 | 1 | Single | 30 | 30 ns | 30ns | 35 ns | 70 ns | 25A | 8V | 12V | 3.1W Ta 31W Tc | -12V | P-Channel | 4100pF @ 6V | 8.2m Ω @ 6A, 4.5V | 900mV @ 250μA | 25A Tc | 105nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7115DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7115dnt1ge3-datasheets-0397.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 14 Weeks | Unknown | 295mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | Other Transistors | S-XDSO-C5 | 11 ns | 28ns | 35 ns | 52 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 150V | -2V | 3.7W Ta 52W Tc | -150V | P-Channel | 1190pF @ 50V | -2 V | 295m Ω @ 4A, 10V | 4V @ 250μA | 8.9A Tc | 42nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N6661-2 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-2n6661jtxl02-datasheets-9341.pdf | TO-205AD, TO-39-3 Metal Can | 9.4mm | 6.6mm | 8.15mm | Contains Lead | 3 | 26 Weeks | 4Ohm | 3 | no | EAR99 | LOW THRESHOLD, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE | Lead, Tin | No | BOTTOM | WIRE | 2 | 1 | Single | 725mW | 1 | FET General Purpose Powers | 860mA | 20V | SILICON | DRAIN | SWITCHING | 90V | 90V | 725mW Ta 6.25W Tc | 0.86A | N-Channel | 50pF @ 25V | 4 Ω @ 1A, 10V | 2V @ 1mA | 860mA Tc | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7164DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7164dpt1ge3-datasheets-1812.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | No SVHC | 6.25mOhm | 8 | yes | EAR99 | Tin | No | DUAL | C BEND | 260 | 8 | 1 | 30 | 6.25W | 1 | FET General Purpose Powers | R-XDSO-C5 | 23 ns | 11ns | 11 ns | 40 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 6.25W Ta 104W Tc | 23.5A | 60V | N-Channel | 2830pF @ 30V | 2.5 V | 6.25m Ω @ 10A, 10V | 4.5V @ 250μA | 60A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N03-06AP-T4E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sud50n0306ape3-datasheets-0471.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | TO-252 | 3.8nF | 90A | 30V | 10W Ta 83W Tc | 5.7MOhm | N-Channel | 3800pF @ 15V | 5.7mOhm @ 20A, 10V | 2.4V @ 250μA | 90A Tc | 95nC @ 10V | 5.7 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS476DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/vishaysiliconix-sis476dnt1ge3-datasheets-4409.pdf | PowerPAK® 1212-8 | 3.4mm | 1.12mm | 3.4mm | Lead Free | 14 Weeks | Unknown | 2.5mOhm | 8 | EAR99 | No | 1 | Single | 3.7W | 24 ns | 16 ns | 30 ns | 40A | 20V | 1V | 3.7W Ta 52W Tc | 30V | N-Channel | 3595pF @ 15V | 2.5m Ω @ 15A, 10V | 2.3V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-GE3 | Vishay Siliconix | $1.00 |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | Lead Free | 15 Weeks | 3 | yes | EAR99 | Tin | No | 260 | 30 | 3.1W | 1 | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | Single | 60V | 3.1W Ta 104.2W Tc | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 100V | 2.5W Ta 6W Tc | 20A | 0.063Ohm | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR788DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir788dpt1ge3-datasheets-8652.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 15 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | FET General Purpose Powers | R-PDSO-C5 | 21 ns | 11ns | 9 ns | 29 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 48W Tc | 0.0034Ohm | 30V | N-Channel | 2873pF @ 15V | 3.4m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 75nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50P04-08-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sud50p0408ge3-datasheets-7864.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.507mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.1mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 73.5W | 1 | Other Transistors | 150°C | R-PSSO-G2 | 15 ns | 12ns | 18 ns | 70 ns | -50A | 20V | SILICON | DRAIN | SWITCHING | 40V | -1V | 2.5W Ta 73.5W Tc | -40V | P-Channel | 5380pF @ 20V | 8.1m Ω @ 22A, 10V | 2.5V @ 250μA | 50A Tc | 159nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHF22N60S-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sihf22n60se3-datasheets-0345.pdf | TO-220-3 Full Pack | Lead Free | 3 | 17 Weeks | Unknown | 190mOhm | 3 | yes | No | e3 | Matte Tin (Sn) | SINGLE | 3 | 250W | 1 | FET General Purpose Power | 24 ns | 68ns | 59 ns | 77 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 2V | 250W Tc | TO-220AB | 65A | 690 mJ | 600V | N-Channel | 2810pF @ 25V | 190m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 110nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7456DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7456dpt1e3-datasheets-9024.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 25mOhm | 8 | yes | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | FLAT | 8 | 1 | Single | 5.2W | 1 | R-PDSO-F5 | 14 ns | 10ns | 10 ns | 46 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 1.9W Ta | 40A | 45 mJ | 100V | N-Channel | 60ns | 2 V | 25m Ω @ 9.3A, 10V | 4V @ 250μA | 5.7A Ta | 44nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIB404DK-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sib404dkt1ge3-datasheets-2734.pdf | PowerPAK® SC-75-6L | Lead Free | 3 | 24 Weeks | Unknown | 19mOhm | 6 | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 6 | 1 | 40 | 2.5W | 1 | FET General Purpose Power | S-PDSO-C3 | 5 ns | 40ns | 20 ns | 20 ns | 9A | 5V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 350mV | 2.5W Ta 13W Tc | 9A | 35A | N-Channel | 19m Ω @ 3A, 4.5V | 800mV @ 250μA | 9A Tc | 15nC @ 4.5V | 4.5V | ±5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUD50N04-8M8P-4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sud50n048m8p4ge3-datasheets-2298.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 8.8mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 48.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 30 ns | 15ns | 15 ns | 45 ns | 14A | 20V | SILICON | DRAIN | SWITCHING | 40V | 40V | 1.5V | 3.1W Ta 48.1W Tc | 50A | 45 mJ | N-Channel | 2400pF @ 20V | 8.8m Ω @ 20A, 10V | 3V @ 250μA | 14A Ta 50A Tc | 56nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4712DY-T1-GE3 | Vishay Siliconix | $0.24 |
Min: 1 Mult: 1 |
download | SkyFET®, TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4712dyt1ge3-datasheets-4346.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 15 Weeks | 506.605978mg | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | 30 | 1 | 16 ns | 18ns | 10 ns | 15 ns | 14.6A | 2.5V | SILICON | SINGLE WITH BUILT-IN DIODE | 2.5W Ta 5W Tc | 30V | N-Channel | 1084pF @ 15V | 2.5 V | 13m Ω @ 15A, 10V | 2.5V @ 1mA | 14.6A Tc | 28nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4483ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4483adyt1ge3-datasheets-3642.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8.8mOhm | 8 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | 30 | 2.9W | 1 | 70 ns | 150ns | 28 ns | 43 ns | 13.5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.1V | 2.9W Ta 5.9W Tc | P-Channel | 3900pF @ 15V | 8.8m Ω @ 10A, 10V | 2.6V @ 250μA | 19.2A Tc | 135nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32453DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | MICRO FOOT® | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | 85°C | -40°C | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 4-UFBGA, CSPBGA | 800μm | 545μm | 800μm | 12 Weeks | Unknown | 2.5V | 900mV | 65mOhm | 4 | On/Off | No | 2.5V | 1.2A | 196mW | 2.5V | 196mW | SIP3245* | 4-WCSP (0.76x0.76) | 1.2A | N-Channel | 0.9V~2.5V | 1 μs | 150 μs | 1 | General Purpose | High Side | Reverse Current | 1.2A | Not Required | 54mOhm | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8816EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8816edbt2e1-datasheets-6230.pdf | 4-XFBGA | Lead Free | 4 | 44 Weeks | No SVHC | 4 | yes | EAR99 | No | Pure Matte Tin (Sn) | BOTTOM | BALL | 260 | Single | 30 | 1 | 15 ns | 20ns | 10 ns | 20 ns | 2.3A | 12V | SILICON | SWITCHING | 600mV | 500mW Ta | 1.5A | 0.123Ohm | 30V | N-Channel | 195pF @ 15V | 109m Ω @ 1A, 10V | 1.4V @ 250μA | 8nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32451DB-T2-GE1 | Vishay Siliconix | $0.54 |
Min: 1 Mult: 1 |
download | MICRO FOOT® | Surface Mount | Surface Mount | -40°C~125°C TJ | Digi-Reel® | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 4-UFBGA, CSPBGA | 2.5V | 60μA | 16 Weeks | Unknown | 65mOhm | 4 | On/Off | No | 2.5V | 2.5V | 34μA | Load Discharge | 196mW | SIP32451 | SPST | 900mV | 1.2A | N-Channel | 0.9V~2.5V | 1 μs | 1 μs | 1 | General Purpose | High Side | Reverse Current | Not Required | 54m Ω | 1:1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2371EDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2371edst1ge3-datasheets-9378.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | No SVHC | 45mOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1 | Single | 30 | 1.7W | 1 | 150°C | 7 ns | 65ns | 62 ns | 52 ns | -4.8A | 12V | SILICON | SWITCHING | 30V | -600mV | 1W Ta 1.7W Tc | -30V | P-Channel | 45m Ω @ 3.7A, 10V | 1.5V @ 250μA | 4.8A Tc | 35nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4282ADVP3-T1GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOS | Non-Inverting | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sip4282adnp3t1ge4-datasheets-7143.pdf | PowerPAK® SC-75-6L | 6 | 14 Weeks | 95.991485mg | 520mOhm | 6 | On/Off | yes | EAR99 | No | Load Discharge, Slew Rate Controlled | Pure Matte Tin (Sn) | 610mW | DUAL | 260 | 0.5mm | 6 | 30 | Peripheral Drivers | 2/5V | 1.4A | P-Channel | 1.5V~5.5V | 20 μs | 4 μs | 1 | General Purpose | High Side | SOURCE | 1 | Not Required | 350m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF300DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sizf300dtt1ge3-datasheets-1894.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (6x5) | 30V | 3.8W Ta 48W Tc 4.3W Ta 74W Tc | 2 N-Channel (Dual) | 1100pF @ 15V 3150pF @ 15V | 4.5mOhm @ 10A, 10V, 1.84mOhm @ 10A, 10V | 2.2V @ 250μA | 23A Ta 75A Tc 34A Ta 141A Tc | 22nC @ 10V, 62nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4280DT-3-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sip4280dt3t1e3-datasheets-0064.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 36.003894mg | 80mOhm | 6 | On/Off | yes | EAR99 | No | e3 | Load Discharge, Slew Rate Controlled | MATTE TIN | 440mW | DUAL | GULL WING | 260 | 0.95mm | SIP4280 | 6 | 10 | 440mW | Peripheral Drivers | 2/5V | 2.3A | P-Channel | 1.8V~5.5V | 40 μs | 10 μs | 1 | General Purpose | High Side | UVLO | 1 | Not Required | 80m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA921EDJ-T4-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia921edjt1ge3-datasheets-4545.pdf | PowerPAK® SC-70-6 Dual | 14 Weeks | yes | EAR99 | unknown | 7.8W | NOT SPECIFIED | NOT SPECIFIED | Other Transistors | 4.5A | 20V | METAL-OXIDE SEMICONDUCTOR | 7.8W | 2 P-Channel (Dual) | 59m Ω @ 3.6A, 4.5V | 1.4V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP4280ADT-1-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-Inverting | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sip4280adt3t1e3-datasheets-0103.pdf | SOT-23-6 Thin, TSOT-23-6 | 2mm | Lead Free | 8 | 36.003894mg | 80mOhm | 6 | On/Off | yes | EAR99 | No | 1 | e3 | Slew Rate Controlled | MATTE TIN | 440mW | DUAL | GULL WING | 260 | 5V | 0.5mm | SIP4280 | 6 | 5.5V | 10 | 440mW | Peripheral Drivers | 2/5V | R-PDSO-G8 | 2.3A | P-Channel | 1.5V~5.5V | 1 | General Purpose | High Side | UVLO | TRANSIENT; UNDER VOLTAGE | 40 μs | 1 | Not Required | 80m Ω | 1:1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1913EDH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1913edht1e3-datasheets-4332.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | Unknown | 490mOhm | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 570mW | GULL WING | SI1913 | 6 | Dual | 740mW | 2 | Other Transistors | 150 ns | 480ns | 850 ns | 840 ns | -1A | 12V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | -450mV | 0.88A | 20V | 2 P-Channel (Dual) | -450 mV | 490m Ω @ 880mA, 4.5V | 450mV @ 100μA | 880mA | 1.8nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC464ED-T1-GE3 | Vishay Siliconix | $2.11 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | -40°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | PowerPAK® MLP55-27 | 12 Weeks | EAR99 | 60V | e3 | Matte Tin (Sn) | 260 | SWITCHING REGULATOR | 30 | 55.2V | Adjustable | Step-Down | 1 | Positive | Buck | Yes | 4.5V | 2A | 0.8V | 100kHz~2MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501ADY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si4501adyt1e3-datasheets-4443.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 18mOhm | 8 | No | 1.3W | SI4501 | 1.3W | 2 | 8-SO | 21 ns | 45ns | 45 ns | 60 ns | 6.3A | 8V | 30V 8V | 1.3W | 42mOhm | 8V | N and P-Channel, Common Drain | 18mOhm @ 8.8A, 10V | 1.8V @ 250μA | 6.3A 4.1A | 20nC @ 5V | Logic Level Gate | 18 mΩ |
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