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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SUM90330E-GE3 | Vishay Siliconix | $39.03 |
Min: 1 Mult: 1 |
download | ThunderFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum90330ege3-datasheets-0533.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | EAR99 | unknown | 200V | 125W Tc | N-Channel | 1172pF @ 100V | 37.5m Ω @ 12.2A, 10V | 4V @ 250μA | 35.1A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ144AE-T1_GE3 | Vishay Siliconix | $2.33 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq144aet1ge3-datasheets-1350.pdf | PowerPAK® 8 x 8 | PowerPAK® 8 x 8 | 40V | 600W Tc | N-Channel | 9020pF @ 25V | 900μOhm @ 20A, 10V | 3.5V @ 250μA | 575A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48PBF | Vishay Siliconix | $1.99 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfz48pbf-datasheets-1974.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 11 Weeks | 6.000006g | 3 | No | 1 | Single | 190W | 1 | TO-220AB | 2.4nF | 8.1 ns | 250ns | 250 ns | 210 ns | 50A | 20V | 60V | 190W Tc | 18mOhm | 60V | N-Channel | 2400pF @ 25V | 4 V | 18mOhm @ 43A, 10V | 4V @ 250μA | 50A Tc | 110nC @ 10V | 18 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| SIHW21N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihw21n80aege3-datasheets-2452.pdf | TO-247-3 | 14 Weeks | TO-247AD | 800V | 32W Tc | N-Channel | 1388pF @ 100V | 235mOhm @ 11A, 10V | 4V @ 250μA | 17.4A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7415AENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sq7415aenwt1ge3-datasheets-3802.pdf | PowerPAK® 1212-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 53W Tc | P-Channel | 1385pF @ 25V | 65m Ω @ 5.7A, 10V | 2.5V @ 250μA | 16A Tc | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9435BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si9435bdyt1e3-datasheets-9791.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 42mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.3W | 1 | Other Transistors | 14 ns | 14ns | 14 ns | 42 ns | -4.1A | 20V | SILICON | 30V | 30V | -3V | 1.3W Ta | P-Channel | 42m Ω @ 5.7A, 10V | 3V @ 250μA | 4.1A Ta | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| SIR494DP-T1-GE3 | Vishay Siliconix | $6.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir494dpt1ge3-datasheets-5105.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | No | 1 | PowerPAK® SO-8 | 6.9nF | 42 ns | 60ns | 54 ns | 54 ns | 60A | 20V | 12V | 6.25W Ta 104W Tc | 1mOhm | 12V | N-Channel | 6900pF @ 6V | 1.2mOhm @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 150nC @ 10V | 1.2 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| SQD97N06-6M3L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sqr97n066m3lge3-datasheets-3737.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 97A | 60V | 136W Tc | N-Channel | 6060pF @ 25V | 6.3m Ω @ 25A, 10V | 2.5V @ 250μA | 97A Tc | 125nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS822DNT-T1-GE3 | Vishay Siliconix | $1.08 |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis822dntt1ge3-datasheets-7907.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 15.6W Tc | N-Channel | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4497DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si4497dyt1ge3-datasheets-9111.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 3.3mOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | 3.5W | 1 | 150°C | 19 ns | 13ns | 25 ns | 115 ns | -24.8A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | -2.5V | 3.5W Ta 7.8W Tc | 36A | -30V | P-Channel | 9685pF @ 15V | -1 V | 3.3m Ω @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 285nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||
| SQM47N10-24L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqm47n1024lge3-datasheets-9876.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | No | GULL WING | 260 | 4 | 1 | Single | 40 | 136W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 6ns | 6 ns | 32 ns | 47A | 20V | SILICON | DRAIN | 100V | 2V | 136W Tc | 0.024Ohm | 92 mJ | N-Channel | 3620pF @ 25V | 2 V | 24m Ω @ 40A, 10V | 2.5V @ 250μA | 47A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI5404BDC-T1-E3 | Vishay Siliconix | $0.10 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5404bdct1e3-datasheets-1082.pdf | 8-SMD, Flat Lead | 3.0988mm | 1.0922mm | 1.7018mm | Lead Free | 84.99187mg | Unknown | 28mOhm | 8 | No | 1 | Single | 1.3W | 1 | 1206-8 ChipFET™ | 12 ns | 12ns | 12 ns | 25 ns | 7.5A | 12V | 20V | 600mV | 1.3W Ta | 28mOhm | 20V | N-Channel | 28mOhm @ 5.4A, 4.5V | 1.5V @ 250μA | 5.4A Ta | 11nC @ 4.5V | 28 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| SI8800EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si8800edbt2e1-datasheets-6624.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 30 Weeks | 80mOhm | 4 | yes | EAR99 | No | e3 | MATTE TIN | BOTTOM | BALL | 260 | 4 | 2 | Dual | 30 | 900mW | 1 | FET General Purpose Power | 350 ns | 2.8A | 8V | SILICON | SWITCHING | 500mW Ta | 2A | 20V | N-Channel | 80m Ω @ 1A, 4.5V | 1V @ 250μA | 8.3nC @ 8V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| SQJ431AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj431aept1ge3-datasheets-7828.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 200V | 68W Tc | P-Channel | 3700pF @ 25V | 305mOhm @ 3.8A, 10V | 3.5V @ 250μA | 9.4A Tc | 85nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISHA04DN-T1-GE3 | Vishay Siliconix | $0.76 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisha04dnt1ge3-datasheets-8402.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 52W Tc | N-Channel | 3595pF @ 15V | 2.15mOhm @ 15A, 10V | 2.2V @ 250μA | 30.9A Ta 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40020EL_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40020elge3-datasheets-8870.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 40V | 107W Tc | N-Channel | 8800pF @ 25V | 2.2mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 165nC @ 20V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4668DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4668dyt1e3-datasheets-9151.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 13 Weeks | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | Not Qualified | R-PDSO-G8 | 12ns | 18 ns | 73 ns | 16.2A | 16V | SILICON | 2.5W Ta 5W Tc | 11.5A | 0.0105Ohm | 25V | N-Channel | 1654pF @ 15V | 10.5m Ω @ 15A, 10V | 2.6V @ 250μA | 16.2A Tc | 42nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| SIRA60DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira60dpt1ge3-datasheets-7211.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 57W Tc | N-Channel | 7650pF @ 15V | 0.94mOhm @ 20A, 10V | 2.2V @ 250μA | 100A Tc | 125nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6469DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6469dqt1ge3-datasheets-0848.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | 15 Weeks | 28mOhm | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | Not Qualified | 6A | 8V | SILICON | SWITCHING | 1.5W Ta | 6A | 30A | 8V | P-Channel | 28m Ω @ 6A, 4.5V | 450mV @ 250μA (Min) | 40nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||
| IRFD320PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfd320pbf-datasheets-1231.pdf | 4-DIP (0.300, 7.62mm) | 5mm | 3.37mm | 6.29mm | Lead Free | 3 | 8 Weeks | Unknown | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1W | 1 | FET General Purpose Power | R-PDIP-T3 | 10 ns | 14ns | 14 ns | 30 ns | 490mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1W Ta | 400V | N-Channel | 410pF @ 25V | 4 V | 1.8 Ω @ 210mA, 10V | 4V @ 250μA | 490mA Ta | 20nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| SIHG80N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg80n60ege3-datasheets-1933.pdf | TO-247-3 | 14 Weeks | e3 | 600V | 520W Tc | N-Channel | 6900pF @ 100V | 30m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 443nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB12N50E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sihb12n50ege3-datasheets-2665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | 1.437803g | Unknown | 3 | SINGLE | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | R-PSSO-G2 | 10.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 4V | 114W Tc | 500V | N-Channel | 886pF @ 100V | 380m Ω @ 6A, 10V | 4V @ 250μA | 10.5A Tc | 50nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIRA84BDP-T1-GE3 | Vishay Siliconix | $0.41 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira84bdpt1ge3-datasheets-2985.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 3.7W Ta 36W Tc | N-Channel | 1050pF @ 15V | 4.6mOhm @ 15A, 10V | 2.4V @ 250μA | 22A Ta 70A Tc | 32nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS444DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2015 | /files/vishaysiliconix-sis444dnt1ge3-datasheets-3872.pdf | PowerPAK® 1212-8 | 5 | 14 Weeks | 8 | EAR99 | unknown | DUAL | C BEND | NOT SPECIFIED | 8 | 1 | NOT SPECIFIED | 3.7W | 1 | FET General Purpose Power | R-PDSO-C5 | 14 ns | 13ns | 8 ns | 33 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 52W Tc | 70A | 0.0033Ohm | 20 mJ | N-Channel | 3065pF @ 15V | 3.3m Ω @ 10A, 10V | 2.3V @ 250μA | 35A Tc | 102nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| SQD23N06-31L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd23n0631lge3-datasheets-4018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 60V | 37W Tc | N-Channel | 845pF @ 25V | 31mOhm @ 15A, 10V | 2.5V @ 250μA | 23A Tc | 24nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3442BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 860mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 4.2A | 12V | SILICON | 20V | 20V | 1.8V | 860mW Ta | 3A | 0.057Ohm | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||
| SI5414DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5414dct1ge3-datasheets-6087.pdf | 8-SMD, Flat Lead | 15 Weeks | 8 | No | 1206-8 ChipFET™ | 1.5nF | 14 ns | 12ns | 14 ns | 36 ns | 6A | 12V | 20V | 2.5W Ta 6.3W Tc | 40mOhm | 20V | N-Channel | 1500pF @ 10V | 17mOhm @ 9.9A, 4.5V | 1.5V @ 250μA | 6A Tc | 41nC @ 10V | 17 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||
| SI3467DV-T1-GE3 | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3467dvt1e3-datasheets-7206.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 15 Weeks | yes | EAR99 | unknown | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | Single | 30 | 1.14W | 1 | Other Transistors | Not Qualified | R-PDSO-G6 | 3.8A | 20V | SILICON | SWITCHING | 1.14W Ta | 0.054Ohm | 20V | P-Channel | 54m Ω @ 5A, 10V | 3V @ 250μA | 3.8A Ta | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHB4N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb4n80ege3-datasheets-8192.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 18 Weeks | D2PAK (TO-263) | 800V | 69W Tc | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR220DP-T1-GE3 | Vishay Siliconix | $2.26 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/siliconlabs-ezr32lg330f256r55gc0-datasheets-6189.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 1085pF @ 10V | 5.8mOhm @ 20A, 10V | 2.1V @ 250μA | 87.7A Ta 100A Tc | 200nC @ 10V | 4.5V 10V | +16V, -12V |
