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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG2723DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 2μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2723dnt1e4-datasheets-7578.pdf | 10-UFQFN | 1.8mm | 3V | 10 | 14 Weeks | 4.3V | 2.6V | 8Ohm | 10 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | NO LEAD | 260 | 3V | DG2723 | 10 | 1 | 40 | 208mW | Multiplexer or Switches | 3V | Not Qualified | 700MHz | Single | 4 | 2 | 8Ohm | 30 dB | 0.8Ohm | BREAK-BEFORE-MAKE | 30ns | 2:1 | 2.6V~5.5V | SPDT | 100nA | 2.5pF | 30ns, 25ns | 3pC | 800m Ω | -36dB @ 240MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4214DDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si4214ddyt1ge3-datasheets-6200.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 19.5mOhm | 3.1W | 8-SO | 660pF | 8.5A | 30V | 3.1W | 2 N-Channel (Dual) | 660pF @ 15V | 19.5mOhm @ 8A, 10V | 2.5V @ 250μA | 8.5A | 22nC @ 10V | Logic Level Gate | 19.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3157EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg3157edlt1ge3-datasheets-5260.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 580MHz | 9Ohm | 2:1 | 1.65V~5.5V | SPDT | 100nA | 1.3pC | 90mOhm | -61dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4808DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4808dyt1e3-datasheets-9830.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 6 Weeks | 22mOhm | 8 | yes | EAR99 | unknown | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | 8 | 30 | 2W | 2 | FET General Purpose Power | Not Qualified | 5.7A | 20V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 30V | METAL-OXIDE SEMICONDUCTOR | 30V | 2 N-Channel (Dual) | 22m Ω @ 7.5A, 10V | 800mV @ 250μA (Min) | 20nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount, Through Hole | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 15V | Lead Free | 1μA | 12 Weeks | 139.989945mg | No SVHC | 36V | 13V | 35Ohm | 8 | Tin | No | 1μA | Non-Inverting | 400mW | DG419 | 1 | 400mW | 1 | 8-MSOP | SPDT | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | 2 | 30mA | 2 | 25Ohm | 35Ohm | 12V ±15V | 2:1 | SPDT | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si1539dlt1e3-datasheets-4294.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 7.512624mg | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 270mW | DUAL | GULL WING | 260 | SI1539 | 6 | 30 | 270mW | 2 | Other Transistors | 420mA | 20V | SILICON | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 0.54A | 0.48Ohm | 30V | N and P-Channel | 480m Ω @ 590mA, 10V | 2.6V @ 250μA | 540mA 420mA | 1.4nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201HSDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg201hsdqt1e3-datasheets-3678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 16.5V | Lead Free | 10mA | 16 | 15 Weeks | 172.98879mg | 25V | 13V | 90Ohm | 16 | yes | unknown | 4 | 4.5mA | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | 0.65mm | DG201 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 60 ns | 50 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 50Ohm | 85 dB | 0.75Ohm | BREAK-BEFORE-MAKE | NC | 10.8V~16.5V ±15V | 1:1 | SPST - NC | 1nA | 5pF | 60ns, 50ns | -5pC | 1.5 Ω | -100dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4650DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4650dyt1e3-datasheets-1927.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | 3.1W | DUAL | GULL WING | 260 | SI4650 | 8 | 2 | 30 | 2 | 32 ns | 130ns | 34 ns | 19 ns | 7.8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 30A | 30V | 2 N-Channel (Half Bridge) | 1550pF @ 15V | 18m Ω @ 8A, 10V | 3V @ 1mA | 8A | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG211BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 10μA | 16 | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | Tin | No | 4 | 50μA | e3 | Non-Inverting | 470mW | 260 | 15V | DG211 | 16 | 1 | 40 | 470mW | Multiplexer or Switches | 512/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 100mA | 4 | 85Ohm | 50Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7911DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7911dnt1e3-datasheets-4763.pdf | PowerPAK® 1212-8 Dual | Lead Free | 6 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.3W | C BEND | 260 | SI7911 | 8 | Dual | 30 | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 35ns | 40 ns | 70 ns | 4.2A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 20A | 0.051Ohm | -20V | 2 P-Channel (Dual) | 51m Ω @ 5.7A, 4.5V | 1V @ 250μA | 15nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408DQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg408dye3-datasheets-7678.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.07mm | 920μm | 4.4mm | 36V | Lead Free | 500μA | 16 | 15 Weeks | 172.98879mg | 44V | 13V | 90Ohm | 16 | yes | No | 1 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 265 | 15V | 0.65mm | DG408 | 16 | 8 | 40 | 600mW | 1 | 150 ns | 150 ns | 20V | 15V | Multiplexer | 160 ns | Dual, Single | 5V | -15V | 100Ohm | 75 dB | 15Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.02A | 8:1 | 500pA | 3pF 26pF | 150ns, 150ns | 20pC | 15 Ω (Max) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3993DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3993dvt1e3-datasheets-4452.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 830mW | GULL WING | 260 | SI3993 | 6 | 2 | Dual | 30 | 830mW | 2 | Other Transistors | 10 ns | 16ns | 12 ns | 17 ns | -2.2A | 20V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | -3V | 1.8A | 0.133Ohm | -30V | 2 P-Channel (Dual) | -3 V | 133m Ω @ 2.2A, 10V | 3V @ 250μA | 1.8A | 5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411DJ-E3 | Vishay Siliconix | $2.32 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | Lead Free | 1μA | 16 | 1.627801g | Unknown | 36V | 13V | 35Ohm | 16 | yes | Tin | No | 4 | 100pA | e3 | Non-Inverting | 470mW | 260 | 15V | DG411 | 16 | 1 | 30 | 470mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 35Ohm | 25Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NC | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3905DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3905dvt1ge3-datasheets-2249.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 1.15W | Dual | 1.15W | 2 | 6-TSOP | 47ns | 47 ns | 28 ns | 2.5A | 8V | 8V | 1.15W | 125mOhm | 8V | 2 P-Channel (Dual) | 125mOhm @ 2.5A, 4.5V | 450mV @ 250μA (Min) | 6nC @ 4.5V | Logic Level Gate | 125 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG213DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg213dye3-datasheets-4404.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 13 Weeks | 547.485991mg | 40V | 3V | 110Ohm | 16 | yes | No | 4 | 5μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG213 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 130 ns | 100 ns | 22V | Dual, Single | 3V | -15V | 4 | SEPARATE OUTPUT | 60Ohm | 90 dB | 1Ohm | BREAK-BEFORE-MAKE | 3V~40V ±3V~22V | 1:1 | SPST - NO/NC | 500pA | 5pF 5pF | 130ns, 100ns | 1pC | 1 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4914BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4914bdyt1ge3-datasheets-1944.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 15 Weeks | 506.605978mg | 8 | No | 3.1W | SI4914 | 2 | 2 | 8-SO | 10 ns | 9ns | 9 ns | 16 ns | 7.4A | 20V | 30V | 2.7W 3.1W | 23mOhm | 30V | 2 N-Channel (Half Bridge) | 21mOhm @ 8A, 10V | 2.7V @ 250μA | 8.4A 8A | 10.5nC @ 4.5V | Standard | 21 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 10μA | 15 Weeks | 172.98879mg | Unknown | 25V | 4.5V | 160Ohm | 16 | 50μA | 640mW | DG212 | 4 | 640mW | 4 | 16-TSSOP | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4967DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4967dyt1e3-datasheets-2305.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 23mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | 8 | Dual | 40 | 2W | 2 | Other Transistors | 25 ns | 40ns | 95 ns | 210 ns | 7.5A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | 30A | -12V | 2 P-Channel (Dual) | 23m Ω @ 7.5A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG454EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 100μA | ROHS3 Compliant | 2015 | /files/vishaysiliconix-dg455eqt1e3-datasheets-7819.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 5.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | 25μA | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG454 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 60 dB | 0.12Ohm | BREAK-BEFORE-MAKE | 112ns | NC | 1:1 | SPST - NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6955ADQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6955adqt1ge3-datasheets-2330.pdf | 8-TSSOP (0.173, 4.40mm Width) | 157.991892mg | 8 | 830mW | 2 | Dual | 830mW | 2 | 8-TSSOP | 8 ns | 9ns | 9 ns | 21 ns | 2.5A | 20V | 30V | 830mW | 80mOhm | -30V | 2 P-Channel (Dual) | 80mOhm @ 2.9A, 10V | 1V @ 250μA (Min) | 2.5A | 8nC @ 5V | Logic Level Gate | 80 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG409LEDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-VFQFN Exposed Pad | 3mm | 3mm | 16 | 16 Weeks | 23Ohm | 1 | e3 | PURE MATTE TIN | YES | QUAD | NO LEAD | 260 | 5V | 0.5mm | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | S-XQCC-N16 | -5V | 23Ohm | 51ns | 80ns | 3V~16V ±3.3V~8V | 4:1 | SP4T | 1nA | 5.5pF 13.5pF | 72ns, 47ns | -10pC | 1 Ω | -109dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7901EDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7901ednt1e3-datasheets-2349.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | 8 | 1.3W | 2 | Dual | PowerPAK® 1212-8 Dual | 2.5 μs | 4μs | 4 μs | 15 μs | 4.3A | 12V | 20V | 1.3W | 48mOhm | -20V | 2 P-Channel (Dual) | 48mOhm @ 6.3A, 4.5V | 1V @ 800μA | 4.3A | 18nC @ 4.5V | Logic Level Gate | 48 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | 1.75mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-SOIC (0.154, 3.90mm Width) | 9.9mm | 3.9mm | Lead Free | 1μA | 16 | 13 Weeks | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 1.27mm | DG444 | 16 | 1 | 30 | 640mW | Multiplexer or Switches | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904dnt1e3-datasheets-2389.pdf | PowerPAK® 1212-8 Dual | 30mOhm | No | 1.3W | SI7904 | Dual | PowerPAK® 1212-8 Dual | 15 ns | 50ns | 45 ns | 60 ns | 5.3A | 8V | 20V | 1.3W | 30mOhm | 20V | 2 N-Channel (Dual) | 30mOhm @ 7.7A, 4.5V | 1V @ 935μA | 5.3A | 15nC @ 4.5V | Logic Level Gate | 30 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441LDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 10μA | ROHS3 Compliant | 2007 | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 100μA | 21 Weeks | 1.627801g | 12V | 2.7V | 35Ohm | 16 | DG441 | 4 | 16-DIP | 280MHz | SPST | 136 ns | 100 ns | 6V | Dual, Single | 3V | 30Ohm | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100mOhm | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4965DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4965dyt1ge3-datasheets-2286.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 186.993455mg | 21mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2W | GULL WING | 260 | 8 | 2 | Dual | 40 | 2W | 2 | Other Transistors | 35 ns | 45ns | 90 ns | 170 ns | 8A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | -8V | 2 P-Channel (Dual) | 21m Ω @ 8A, 4.5V | 450mV @ 250μA (Min) | 55nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 85°C | -40°C | 50μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 50μA | 13 Weeks | 665.986997mg | Unknown | 25V | 4.5V | 85Ohm | 16 | No | 50μA | 640mW | DG202 | 4 | 640mW | 4 | 16-SOIC | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | 4 | 4 | 85Ohm | 85Ohm | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2Ohm | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2324DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si2324dst1ge3-datasheets-3632.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 14 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | 30 | 1.25W | 1 | FET General Purpose Power | 6 ns | 10ns | 6 ns | 10 ns | 2.3A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.25W Ta 2.5W Tc | 100V | N-Channel | 190pF @ 50V | 234m Ω @ 1.5A, 10V | 2.9V @ 250μA | 2.3A Tc | 10.4nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9409EDN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 3 (168 Hours) | BICMOS | 0.95mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg9408ednt1ge4-datasheets-0467.pdf | 16-VQFN Exposed Pad | 4mm | 4mm | 16 | 16 Weeks | 16 | 1 | e4 | NICKEL PALLADIUM GOLD | YES | QUAD | NO LEAD | 260 | 5V | 0.65mm | 4 | DIFFERENTIAL MULTIPLEXER | 30 | 2 | -5V | 7Ohm | 83 dB | 3.6Ohm | 43ns | 76ns | 2.7V~12V ±3V~6V | 4:1 | 2nA | 23pF 112pF | 70ns, 44ns | 29pC | 3.6 Ω (Max) | -85dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2315BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2315bdst1e3-datasheets-6333.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | 3 | 14 Weeks | 1.437803g | Unknown | 3 | yes | EAR99 | Tin | No | 3A | e3 | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 750mW | 1 | Other Transistors | 15 ns | 35ns | 35 ns | 50 ns | -3A | 8V | SILICON | -900mV | 750mW Ta | 0.05Ohm | -12V | P-Channel | 715pF @ 6V | -900 mV | 50m Ω @ 3.85A, 4.5V | 900mV @ 250μA | 3A Ta | 15nC @ 4.5V | 4.5V | ±8V |
