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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | On-State Resistance | High Level Output Current | Threshold Voltage | Power - Max | Input Voltage (Min) | Input Voltage (Max) | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIA914DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sia914djt1e3-datasheets-4841.pdf | PowerPAK® SC-70-6 Dual | Lead Free | 6 | Unknown | 53mOhm | 6 | yes | EAR99 | No | 6.5W | 260 | SIA914 | 6 | Dual | 40 | 1.9W | 2 | 5 ns | 32ns | 53 ns | 30 ns | 4.5A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 1V | 20V | 2 N-Channel (Dual) | 400pF @ 10V | 1 V | 53m Ω @ 3.7A, 4.5V | 1V @ 250μA | 11.5nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG470EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 3μA | ROHS3 Compliant | /files/vishaysiliconix-dg470eyt1e3-datasheets-7560.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 6μA | 8 | 12 Weeks | 139.989945mg | 36V | 12V | 8Ohm | 8 | yes | unknown | 1 | 3μA | e3 | MATTE TIN | 320mW | GULL WING | 260 | 15V | 0.65mm | DG470 | 8 | 1 | 40 | 320mW | Multiplexer or Switches | Not Qualified | 166 ns | 108 ns | 22V | 15V | Dual, Single | 4.5V | -15V | 2 | 1 | 6Ohm | 57 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | SPDT | ±4.5V~15V | 500pA | 37pF 85pF | 166ns, 108ns | 58pC | 120m Ω | -63dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ720DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz720dtt1ge3-datasheets-9632.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | 14 Weeks | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | 2 | Dual | 40 | 4.6W | 16A | 20V | 27W 48W | 2 N-Channel (Half Bridge) | 825pF @ 10V | 2 V | 8.7m Ω @ 16.8A, 10V | 2V @ 250μA | 23nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG201BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2001 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 50μA | 16 | 15 Weeks | 172.98879mg | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | 640mW | GULL WING | 260 | 15V | 0.65mm | DG201 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NC | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539DDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-si1539ddlt1ge3-datasheets-1271.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | EAR99 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 340mW | 0.7A | 0.388Ohm | 888 pF | N and P-Channel | 28pF @ 15V 21pF @ 15V | 388m Ω @ 600mA, 10V, 1.07 Ω @ 400mA, 10V | 2.5V @ 250μA, 3V @ 250μA | 700mA Tc 460mA Tc | 1.1nC @ 4.5V, 1.2nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG451EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | CMOS | 5μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 500nA | 16 | 15 Weeks | 172.98879mg | No SVHC | 36V | 12V | 5.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 450mW | GULL WING | 260 | 5V | 0.65mm | DG451 | 16 | 1 | 40 | 450mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 4Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | NC | 1:1 | SPST - NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1988DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si1988dht1e3-datasheets-4376.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.25W | GULL WING | 260 | SI1988 | 6 | 30 | 2 | 8 ns | 20ns | 10 ns | 15 ns | 1.3A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 2 N-Channel (Dual) | 110pF @ 10V | 168m Ω @ 1.4A, 4.5V | 1V @ 250μA | 4.1nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG1413EEQ-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1.2mm | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg1412eent1ge4-datasheets-9047.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 20 Weeks | unknown | 4 | YES | DUAL | GULL WING | 5V | 0.65mm | 1 | 4 | R-PDSO-G16 | 150MHz | -5V | -16.5V | 16.5V | 1.5Ohm | 78 dB | 0.04Ohm | BREAK-BEFORE-MAKE | 280ns | 4.5V~24V ±4.5V~15V | 1:1 | SPST - NO/NC | 500pA | 24pF 23pF | 140ns, 110ns | -41pC | 40m Ω | -104dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4910DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4910dyt1e3-datasheets-4516.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | No SVHC | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2W | GULL WING | 260 | SI4910 | 8 | Dual | 30 | 2W | 2 | FET General Purpose Powers | 60ns | 5 ns | 22 ns | 6A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2V | 3.1W | 65 pF | 40V | 2 N-Channel (Dual) | 855pF @ 20V | 27m Ω @ 6A, 10V | 2V @ 250μA | 7.6A | 32nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG444DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2007 | /files/vishaysiliconix-dg444dyt1e3-datasheets-1287.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 1μA | 16 | 12 Weeks | 1.627801g | Unknown | 36V | 13V | 160Ohm | 16 | yes | No | 4 | 1μA | e3 | Matte Tin (Sn) | 450mW | 15V | DG444 | 16 | 1 | 450mW | Multiplexer or Switches | 512/+-15V | SPST | 250 ns | 140 ns | 22V | 20V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 60 dB | BREAK-BEFORE-MAKE | NC | 5V~36V ±5V~20V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 250ns, 140ns | -1pC | -100dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9934BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si9934bdyt1e3-datasheets-4798.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | 1.1W | GULL WING | 250 | SI9934 | 8 | Dual | 40 | 1.1W | 2 | Other Transistors | 19 ns | 35ns | 50 ns | 80 ns | 4.8A | 8V | SILICON | 12V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 0.035Ohm | 12V | 2 P-Channel (Dual) | -1.4 V | 35m Ω @ 6.4A, 4.5V | 1.4V @ 250μA | 20nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2014 | /files/vishaysiliconix-dg413dqt1e3-datasheets-3810.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | Lead Free | 1μA | 16 | 13 Weeks | 665.986997mg | Unknown | 36V | 13V | 80Ohm | 16 | yes | Tin | No | 4 | 100pA | e3 | Non-Inverting | 600mW | GULL WING | 265 | 15V | 1.27mm | DG412 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | -15V | 30mA | 4 | 35Ohm | 68 dB | BREAK-BEFORE-MAKE | 220ns | NO | 5V~44V ±5V~20V | 1:1 | SPST - NO | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4230DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4230dyt1ge3-datasheets-2231.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 186.993455mg | 8 | No | 3.2W | 2 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 7.3A | 20V | 30V | 3.2W | 20.5mOhm | 30V | 2 N-Channel (Dual) | 950pF @ 15V | 20.5mOhm @ 8A, 10V | 3V @ 250μA | 8A | 25nC @ 10V | Logic Level Gate | 20.5 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG408LEDQ-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg409ledyt1ge3-datasheets-1177.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 4.4mm | 16 | 20 Weeks | No SVHC | 23Ohm | 16 | 1 | e3 | PURE MATTE TIN | YES | DUAL | GULL WING | 260 | 5V | 0.65mm | 8 | SINGLE-ENDED MULTIPLEXER | 30 | 1 | -5V | 23Ohm | 80ns | 3V~16V ±3V~8V | 8:1 | 1nA | 5.5pF 25pF | 72ns, 47ns | 11pC | 1 Ω | -98dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4942DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4942dyt1ge3-datasheets-2263.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | PURE MATTE TIN (SN) | 1.1W | GULL WING | 260 | SI4942 | 8 | Dual | 30 | 1.1W | 2 | FET General Purpose Powers | 13 ns | 10ns | 11 ns | 31 ns | 5.3A | 20V | SILICON | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 40V | 2 N-Channel (Dual) | 21m Ω @ 7.4A, 10V | 3V @ 250μA | 32nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2738DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2739dnt1e4-datasheets-5106.pdf | 8-UFQFN | 1.4mm | 1μA | 8 | 4.3V | 2.3V | 8Ohm | 8 | yes | unknown | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 190mW | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2738 | 8 | 1 | 40 | Multiplexer or Switches | 3V | 2 | Not Qualified | 720MHz | SPST | 60 ns | 50 ns | Single | SEPARATE OUTPUT | 8Ohm | 28 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 70ns | NC | 1:1 | 2.3V~4.3V | SPST - NC | 10nA | 4.4pF 3.8pF | 60ns, 50ns | 10.4pC | 100m Ω | -109dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4952DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4952dyt1ge3-datasheets-5615.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | 2.8W | GULL WING | 260 | SI4952 | 8 | Dual | 40 | 1.8W | 2 | 15 ns | 50ns | 50 ns | 20 ns | 7A | 16V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 8A | 30A | 25V | 2 N-Channel (Dual) | 680pF @ 13V | 23m Ω @ 7A, 10V | 2.2V @ 250μA | 8A | 18nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG468DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 20μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg467dvt1e3-datasheets-9273.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1.1mm | 1.65mm | Lead Free | 15μA | 6 | 10 Weeks | 19.986414mg | No SVHC | 36V | 7V | 9Ohm | 6 | yes | No | 1 | 5μA | e3 | Matte Tin (Sn) | 570mW | GULL WING | 260 | 15V | 0.95mm | DG468 | 6 | 2 | 40 | 570mW | Multiplexer or Switches | 1 | SPST | 140 ns | 80 ns | 20V | Dual, Single | 4.5V | -15V | 7Ohm | 9Ohm | 7Ohm | 61 dB | BREAK-BEFORE-MAKE | NO | 7V~36V ±4.5V~20V | 1:1 | SPST - NO | 1nA | 30pF 15pF | 140ns, 80ns | 21pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5915BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5915bdct1e3-datasheets-2313.pdf | 8-SMD, Flat Lead | 3.1W | SI5915 | 1206-8 ChipFET™ | 420pF | 4A | 8V | 3.1W | 2 P-Channel (Dual) | 420pF @ 4V | 70mOhm @ 3.3A, 4.5V | 1V @ 250μA | 4A | 14nC @ 8V | Logic Level Gate | 70 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG3540DB-T1-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg3540dbt1e1-datasheets-7855.pdf | 8-WFBGA | 1μA | 21 Weeks | 5.5V | 1.8V | 4Ohm | 8 | No | 1nA | 400mW | DG3540 | 2 | 8-MicroFoot™ (1.5x1.5) | 360MHz | SPST | 46 ns | 37 ns | Single | 3.5Ohm | 1:1 | 1.8V~5.5V | SPST - NO/NC | 2nA | 8pF | 41ns, 37ns | 1pC | 200mOhm (Max) | -66dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933CDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5933cdct1ge3-datasheets-1970.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 8 | 15 Weeks | 84.99187mg | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 2.8W | C BEND | 260 | SI5933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 1 ns | 34ns | 34 ns | 22 ns | -3.7A | 8V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 10A | 0.144Ohm | 2 P-Channel (Dual) | 276pF @ 10V | 144m Ω @ 2.5A, 4.5V | 1V @ 250μA | 3.7A | 6.8nC @ 5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2751DB-T2-GE1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/siliconlabs-ezr32lg230f128r60gc0-datasheets-5954.pdf | 22 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6973DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si6973dqt1ge3-datasheets-2343.pdf | 8-TSSOP (0.173, 4.40mm Width) | 8 | No | 830mW | Dual | 830mW | 2 | 8-TSSOP | 27 ns | 27ns | 27 ns | 93 ns | -4.1A | 8V | 20V | 830mW | 30mOhm | 20V | 2 P-Channel (Dual) | 30mOhm @ 4.8A, 4.5V | 450mV @ 250μA (Min) | 4.1A | 30nC @ 4.5V | Logic Level Gate | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417BDQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg418bdqt1e3-datasheets-1717.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 20V | Lead Free | 1μA | 8 | 12 Weeks | 139.989945mg | 36V | 13V | 35Ohm | 8 | yes | No | 4 | e3 | Matte Tin (Sn) | 400mW | GULL WING | 260 | 15V | 0.65mm | DG417 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 89 ns | 80 ns | 22V | 15V | Dual, Single | 7V | -15V | 1 | 25Ohm | 82 dB | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 89ns, 80ns | 38pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ941EP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sqj941ept1ge3-datasheets-2433.pdf | PowerPAK® SO-8 Dual | 4 | 506.605978mg | Unknown | 8 | yes | EAR99 | No | 55W | SINGLE | GULL WING | 260 | 8 | 2 | Dual | 40 | 55W | 2 | Other Transistors | R-PSSO-G4 | 49 ns | 35ns | 26 ns | 47 ns | 8A | 20V | SILICON | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | -2V | 8A | 2 P-Channel (Dual) | 1800pF @ 10V | -2 V | 24m Ω @ 9A, 10V | 2.5V @ 250μA | 55nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG401BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1mA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg403bdye3-datasheets-4860.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 15V | 500μA | 16 | 13 Weeks | 665.986997mg | 36V | 13V | 55Ohm | 16 | yes | No | 2 | e3 | Matte Tin (Sn) | 600mW | GULL WING | 260 | 15V | DG401 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | SPST | 150 ns | 100 ns | 22V | 15V | Dual, Single | 7V | -15V | 2 | SEPARATE OUTPUT | 45Ohm | 72 dB | 3Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | SPST - NO | ±15V | 500pA | 12pF 12pF | 150ns, 100ns | 60pC | -94.8dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ920DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siz920dtt1ge3-datasheets-2719.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | Unknown | 8 | EAR99 | No | 100W | C BEND | SIZ920 | 2 | Dual | 1 | R-PDSO-C6 | 40A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 39W 100W | 70A | 30V | 2 N-Channel (Half Bridge) | 1260pF @ 15V | 7.1m Ω @ 18.9A, 10V | 2.5V @ 250μA | 35nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2735ADN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2735adnt1ge4-datasheets-5409.pdf | 10-UFQFN | 1.8mm | 1μA | 10 | 19 Weeks | 7.002332mg | 4.3V | 1.65V | 500mOhm | 10 | unknown | 2 | e4 | NICKEL PALLADIUM GOLD | 208mW | QUAD | NO LEAD | 3V | DG2735 | 10 | 1 | 208mW | 50MHz | 78 ns | 58 ns | Single | 4 | 2 | 500mOhm | 70 dB | 0.06Ohm | 60ns | 80ns | 2:1 | 1.65V~4.3V | SPDT | 2nA | 55pF | 78ns, 58ns | 60m Ω | -70dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2316BDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2316bdst1ge3-datasheets-3870.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1 | FET General Purpose Powers | 20 ns | 65ns | 65 ns | 11 ns | 4.5A | 20V | SILICON | SWITCHING | 3V | 1.25W Ta 1.66W Tc | 30V | N-Channel | 350pF @ 15V | 50m Ω @ 3.9A, 10V | 3V @ 250μA | 4.5A Tc | 9.6nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG453EY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg452eqt1e3-datasheets-7713.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 500nA | 16 | 13 Weeks | 665.986997mg | No SVHC | 36V | 12V | 5.3Ohm | 16 | yes | ALSO OPERATES WITH 12V SINGLE SUPPLY AND +/-15V DUAL SUPPLY | No | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 5V | 1.27mm | DG453 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | 4 | SPST | 118 ns | 97 ns | 22V | 15V | Dual, Single | 5V | -5V | 4 | SEPARATE OUTPUT | 5.3Ohm | 0.13Ohm | BREAK-BEFORE-MAKE | 113ns | 256ns | 1:1 | SPST - NO/NC | ±5V~15V | 500pA | 31pf 34pF | 118ns, 97ns | 22pC | 120m Ω | -85dB @ 1MHz |
