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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Interface | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Max Input Voltage | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Data Rate | Max Output Current | Max Output Voltage | Min Input Voltage | Min Output Voltage | Output Voltage | Output Current | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Quiescent Current | Threshold Voltage | Power - Max | Input Voltage-Nom | Power Dissipation-Max | Topology | Voltage - Output 2 | Current - Output 2 | Protocol | Number of Transceivers | Control Technique | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Frequency - Switching | Nominal Vgs | Number of Drivers/Receivers | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4448DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4448dyt1e3-datasheets-0578.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 8 | 186.993455mg | Unknown | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 38 ns | 22ns | 33 ns | 240 ns | 50A | 8V | SILICON | SWITCHING | 12V | 1V | 3.5W Ta 7.8W Tc | 32A | N-Channel | 12350pF @ 6V | 1.7m Ω @ 20A, 4.5V | 1V @ 250μA | 50A Tc | 150nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9200EY-E3 | Vishay Siliconix | $2.13 |
Min: 1 Mult: 1 |
download | Transceiver | Surface Mount | Surface Mount | -40°C~125°C | Bulk | 1 (Unlimited) | 125°C | -40°C | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9200ey-datasheets-6968.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 5V | Lead Free | 75mA | 540.001716mg | Unknown | 5.25V | 4.75V | 8 | CAN | No | 75mA | 4.75V~5.25V | SI9200 | 8-SOIC | 1 Mbps | 75mA | CANbus | 1 | 1/1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3805DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3805dvt1e3-datasheets-6320.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 13 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | 30 | 1.1W | 1 | Other Transistors | 18 ns | 40ns | 40 ns | 18 ns | -3.3A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 1.1W Ta 1.4W Tc | 3A | 0.084Ohm | -20V | P-Channel | 330pF @ 10V | 84m Ω @ 3A, 10V | 1.5V @ 250μA | 3.3A Tc | 12nC @ 10V | Schottky Diode (Isolated) | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC417CD-T1-E3 | Vishay Siliconix | $9.95 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -25°C~125°C | Tape & Reel (TR) | 3 (168 Hours) | 130μA | 1mm | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic417cdt1e3-datasheets-6799.pdf | 32-PowerVFQFN | 5mm | 28V | Lead Free | 32 | 15 Weeks | Unknown | 32 | EAR99 | 1 | 28V | 3V~28V | QUAD | SIC417 | 32 | SWITCHING REGULATOR | 10A | 5.5V | 3V | 500mV | 5.5V | 10A | 2 | 5.5V | 10A | 12V | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 5.25V | 150mA | PULSE WIDTH MODULATION | 200kHz~1MHz | No | 0.5V~5.5V 10A | 0.75V~5.25V 150mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5402DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402dct1ge3-datasheets-6376.pdf | 8-SMD, Flat Lead | 8 | No | Single | 2.5W | 1206-8 ChipFET™ | 10 ns | 10ns | 10 ns | 25 ns | 4.9A | 20V | 30V | 1.3W Ta | 35mOhm | 30V | N-Channel | 35mOhm @ 4.9A, 10V | 1V @ 250μA (Min) | 4.9A Ta | 20nC @ 10V | 35 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG541DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Through Hole | CMOS | 3.5mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 16 | 1.627801g | 18V | 10V | 60Ohm | 16 | yes | unknown | 4 | e3 | RGB, T-Switch Configuration | Matte Tin (Sn) | Video | 470mW | NOT SPECIFIED | 15V | DG541 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | 15-3V | Not Qualified | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | 4 | 60Ohm | 60 dB | 2Ohm | BREAK-BEFORE-MAKE | 85ns | 130ns | NO | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4880DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4880dyt1e3-datasheets-6423.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8.5mOhm | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Powers | R-PDSO-G8 | 14 ns | 9ns | 30 ns | 46 ns | 13A | 25V | SILICON | SWITCHING | 2.5W Ta | 50A | 30V | N-Channel | 8.5m Ω @ 13A, 10V | 1.8V @ 250μA | 25nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG538ADN-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 4.57mm | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 28-LCC (J-Lead) | 11.505mm | 28 | no | SELECTABLE DUAL 4-CHANNEL | unknown | 1 | e0 | T-Switch Configuration | TIN LEAD | Ultrasound, Video | YES | QUAD | J BEND | 240 | 15V | 28 | 2 | VIDEO MULTIPLEXER | 30 | Multiplexer or Switches | 515-3V | 5mA | Not Qualified | 500MHz | -3V | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 300ns | 500ns | 4:1 | 10V~21V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4890BDY-T1-E3 | Vishay Siliconix | $2.40 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4890bdyt1ge3-datasheets-0957.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 20 ns | 10ns | 8 ns | 20 ns | 16A | 25V | SILICON | SWITCHING | 2.6V | 2.5W Ta 5.7W Tc | 60A | 20 mJ | 30V | N-Channel | 1535pF @ 15V | 12m Ω @ 10A, 10V | 2.6V @ 250μA | 16A Tc | 33nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4282EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | RoHS Compliant | /files/vishaysiliconix-sq4282eyt1ge3-datasheets-1207.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | 8-SOIC | 10 ns | 11ns | 8 ns | 34 ns | 8A | 20V | 30V | 3.9W | 2 N-Channel (Dual) | 2367pF @ 15V | 12.3mOhm @ 15A, 10V | 2.5V @ 250μA | 8A Tc | 47nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7368DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7368dpt1ge3-datasheets-6503.pdf | PowerPAK® SO-8 | 5.5mOhm | Single | 1.7W | PowerPAK® SO-8 | 20ns | 20 ns | 65 ns | 13A | 16V | 20V | 1.7W Ta | 5.5mOhm | 20V | N-Channel | 5.5mOhm @ 20A, 10V | 1.8V @ 250μA | 13A Ta | 25nC @ 4.5V | 5.5 mΩ | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7216DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si7216dnt1ge3-datasheets-1729.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | Unknown | 40mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 2.5W | C BEND | 260 | SI7216 | 8 | 2 | Dual | 30 | 2.5W | 2 | FET General Purpose Power | S-XDSO-C6 | 9 ns | 57ns | 5 ns | 19 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 40V | METAL-OXIDE SEMICONDUCTOR | 3V | 20.8W | 6.5A | 5 mJ | 40V | 2 N-Channel (Dual) | 670pF @ 20V | 32m Ω @ 5A, 10V | 3V @ 250μA | 19nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5857DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5857dut1e3-datasheets-5947.pdf | PowerPAK® ChipFET™ Dual | 3mm | 750μm | 1.9mm | 8 | 1 | PowerPAK® ChipFet Dual | 480pF | 5 ns | 15ns | 10 ns | 25 ns | 6A | 12V | 20V | 2.3W Ta 10.4W Tc | 58mOhm | P-Channel | 480pF @ 10V | 58mOhm @ 3.6A, 4.5V | 1.5V @ 250μA | 6A Tc | 17nC @ 10V | Schottky Diode (Isolated) | 58 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQUN702E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-squn702et1ge3-datasheets-2463.pdf | Die | 12 Weeks | Die | 40V 200V | 48W Tc 60W Tc | N and P-Channel, Common Drain | 1474pF 1450pF 1302pF @ 20V 100V | 9.2mOhm @ 9.8A, 10V, 60mOhm @ 5A, 10V, 30mOhm @ 6A, 10V | 2.5V @ 250μA, 3.5V @ 250μA | 30A Tc 20A Tc | 23nC, 14nC, 30.2nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7392DP-T1-E3 | Vishay Siliconix | $0.53 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392dpt1e3-datasheets-6589.pdf | PowerPAK® SO-8 | 5 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | C BEND | 260 | 8 | 40 | 1 | FET General Purpose Power | Not Qualified | R-XDSO-C5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 1.8W Ta | 9A | 50A | 0.00975Ohm | 45 mJ | N-Channel | 9.75m Ω @ 15A, 10V | 3V @ 250μA | 9A Ta | 15nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3932DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si3932dvt1ge3-datasheets-4386.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 58MOhm | 6 | yes | EAR99 | Tin | No | e3 | 1.4W | GULL WING | 260 | SI3932 | 6 | 2 | Dual | 30 | 1.14W | 2 | FET General Purpose Powers | 150°C | 5 ns | 15ns | 10 ns | 10 ns | 3.4A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.2V | 3.7A | 30V | 2 N-Channel (Dual) | 235pF @ 15V | 1.2 V | 58m Ω @ 3.4A, 10V | 2.2V @ 250μA | 3.7A | 6nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7392ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7392adpt1e3-datasheets-6602.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | R-XDSO-C5 | 8 ns | 17.5A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 27.5W Tc | 50A | 0.0075Ohm | 30 mJ | 30V | N-Channel | 1465pF @ 15V | 7.5m Ω @ 12.5A, 10V | 2.5V @ 250μA | 30A Tc | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9933CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9933cdyt1ge3-datasheets-4547.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 58MOhm | 8 | yes | EAR99 | Tin | No | 470mW | GULL WING | 260 | SI9933 | 8 | 2 | Dual | 30 | 2 | Other Transistors | 21 ns | 50ns | 13 ns | 29 ns | -4A | 12V | SILICON | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | -1.4V | 3.1W | 4A | -20V | 2 P-Channel (Dual) | 665pF @ 10V | 58m Ω @ 4.8A, 4.5V | 1.4V @ 250μA | 4A | 26nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7495DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7495dpt1e3-datasheets-6648.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 6.5mOhm | e3 | PURE MATTE TIN | 260 | 1 | Single | 30 | Other Transistors | 100 ns | 200ns | 230 ns | 350 ns | 13A | 8V | 12V | 1.8W Ta | -12V | P-Channel | 6.5m Ω @ 21A, 4.5V | 900mV @ 1mA | 13A Ta | 140nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ730DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-siz730dtt1ge3-datasheets-7074.pdf | 6-PowerPair™ | 6mm | 750μm | 3.73mm | Lead Free | 6 | 15 Weeks | Unknown | 6 | EAR99 | No | e3 | MATTE TIN | 48W | 260 | SIZ730 | 6 | 2 | Dual | 40 | 2 | FET General Purpose Power | 15ns | 10 ns | 35A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 27W 48W | 100A | 0.0053Ohm | 45 mJ | 2 N-Channel (Half Bridge) | 830pF @ 15V | 9.3m Ω @ 15A, 10V | 2.2V @ 250μA | 16A 35A | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5463EDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5463edct1e3-datasheets-8486.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | 84.99187mg | 62mOhm | 8 | 1 | Single | 1206-8 ChipFET™ | 1.85 μs | 3.2μs | 3.2 μs | 1.9 μs | -51A | 12V | 20V | 1.25W Ta | 62mOhm | -20V | P-Channel | 62mOhm @ 4A, 4.5V | 450mV @ 250μA (Min) | 3.8A Ta | 15nC @ 4.5V | 62 mΩ | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ942EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj942ept1ge3-datasheets-7636.pdf | PowerPAK® SO-8 | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 17W 48W | 15A | 60A | 0.022Ohm | 18.5 mJ | 2 N-Channel (Dual) | 809pF @ 20V 1451pF @ 20V | 22m Ω @ 7.8A, 10V, 11m Ω @ 10.1A, 10V | 2.3V @ 250μA | 15A Tc 45A Tc | 19.7nC @ 10V, 33.8nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4004DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4004dyt1ge3-datasheets-2063.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 5W | DUAL | GULL WING | 260 | 8 | 30 | 1 | FET General Purpose Power | 15 ns | 12ns | 9 ns | 17 ns | 12A | 20V | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-Channel | 1280pF @ 10V | 13.8m Ω @ 11A, 10V | 2.5V @ 250μA | 12A Tc | 33nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1036X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | /files/vishaysiliconix-si1036xt1ge3-datasheets-9854.pdf | SOT-563, SOT-666 | 6 | 14 Weeks | 540mOhm | EAR99 | e3 | Matte Tin (Sn) | YES | FLAT | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-F6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 220mW | 2 N-Channel (Dual) | 36pF @ 15V | 540m Ω @ 500mA, 4.5V | 1V @ 250μA | 610mA Ta | 1.2nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4654DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4654dyt1e3-datasheets-7077.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 186.993455mg | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1 | 30 ns | 10ns | 10 ns | 50 ns | 18.6A | 16V | SILICON | SWITCHING | 2.5W Ta 5.9W Tc | 0.004Ohm | 25V | N-Channel | 3770pF @ 15V | 4m Ω @ 15A, 10V | 2.5V @ 250μA | 28.6A Tc | 100nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ904DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz904dtt1ge3-datasheets-0342.pdf | 6-PowerPair™ | 6mm | 750μm | 5mm | Lead Free | 6 | 14 Weeks | 24mOhm | 8 | EAR99 | No | 33W | SIZ904 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 9ns | 8 ns | 14 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 20W 33W | 30A | 5 mJ | 30V | 2 N-Channel (Half Bridge) | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 12A 16A | 12nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8467DB-T2-E1 | Vishay Siliconix | $0.88 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8467dbt2e1-datasheets-2409.pdf | 4-XFBGA, CSPBGA | Lead Free | 4 | 73MOhm | 4 | EAR99 | No | BOTTOM | BALL | Single | 1 | Other Transistors | 25 ns | 45ns | 20 ns | 50 ns | -3.7A | -1.5V | SILICON | SWITCHING | 20V | 20V | 780mW Ta 1.8W Tc | P-Channel | 475pF @ 10V | 73m Ω @ 1A, 4.5V | 1.5V @ 250μA | 21nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1965DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si1965dht1e3-datasheets-1509.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 28.009329mg | 390MOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.25W | GULL WING | 260 | SI1965 | 6 | Dual | 40 | 740mW | 2 | Other Transistors | 12 ns | 27ns | 27 ns | 15 ns | 1.14A | 8V | SILICON | SWITCHING | 12V | METAL-OXIDE SEMICONDUCTOR | 1.3A | 2 P-Channel (Dual) | 120pF @ 6V | 390m Ω @ 1A, 4.5V | 1V @ 250μA | 1.3A | 4.2nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE860DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie860dft1ge3-datasheets-2541.pdf | 10-PolarPAK® (M) | 4 | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Power | R-XDSO-N4 | 35 ns | 20ns | 30 ns | 50 ns | 38A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 5.2W Ta 104W Tc | 60A | 80A | N-Channel | 4500pF @ 15V | 2.1m Ω @ 21.7A, 10V | 2.5V @ 250μA | 60A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ200EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sqj200ept1ge3-datasheets-4098.pdf | PowerPAK® SO-8 Dual | 12 Weeks | EAR99 | unknown | 48W | NOT SPECIFIED | NOT SPECIFIED | 60A | 20V | 27W 48W | 2 N-Channel (Dual) | 975pF @ 10V | 8.8m Ω @ 16A, 10V | 2V @ 250μA | 20A 60A | 18nC @ 10V | Standard |
