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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | High Level Output Current | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Output | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4834CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4834cdyt1e3-datasheets-2250.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | 8 | No | 2W | SI4834 | 2W | 2 | 8-SO | 950pF | 17 ns | 12ns | 10 ns | 18 ns | 8A | 20V | 30V | 30V | 2.9W | 20mOhm | 2 N-Channel (Dual) | 950pF @ 15V | 3 V | 20mOhm @ 8A, 10V | 3V @ 1mA | 8A | 25nC @ 10V | Standard | 20 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG212BDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 10μA | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg211bdyt1e3-datasheets-9940.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 10μA | 16 | 13 Weeks | 547.485991mg | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | MATTE TIN | 640mW | GULL WING | 260 | 15V | 1.27mm | DG212 | 16 | 1 | 40 | 640mW | Multiplexer or Switches | 512/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4916DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4916dyt1e3-datasheets-4536.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 13 Weeks | 186.993455mg | 18mOhm | 8 | yes | EAR99 | Tin | No | e3 | 3.5W | DUAL | GULL WING | 260 | SI4916 | 8 | 2 | 30 | 2 | FET General Purpose Power | 10.5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.3W 3.5W | 10A | 30V | 2 N-Channel (Half Bridge) | 18m Ω @ 10A, 10V | 3V @ 250μA | 10A 10.5A | 10nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LEDQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg419ledqt1ge3-datasheets-7465.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) | 16 Weeks | 1 | 8-MSOP | 9Ohm | 3V~16V ±3V~8V | 1:1 | SPST | 10nA | 11pF 32pF | 40ns, 35ns | 26pC | -72dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4933DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4933dyt1e3-datasheets-4569.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.1W | GULL WING | 260 | SI4933 | 8 | Dual | 30 | 1.1W | 2 | Other Transistors | 35 ns | 47ns | 260 ns | 320 ns | -7.4A | 8V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 0.014Ohm | 12V | 2 P-Channel (Dual) | 14m Ω @ 9.8A, 4.5V | 1V @ 500μA | 7.4A | 70nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG441DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 85°C | -40°C | 15μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg441dje3-datasheets-4856.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 100μA | 13 Weeks | 665.986997mg | 36V | 13V | 85Ohm | 16 | Tin | No | 15μA | Non-Inverting | 44V | 900mW | DG441 | 4 | 900mW | 4 | 16-SOIC | SPST | 250 ns | 120 ns | 22V | 15V | Dual, Single | 7V | 4 | 30mA | 4 | 85Ohm | 50Ohm | 12V ±15V | 1:1 | SPST - NC | 500pA | 4pF 4pF | 220ns, 120ns | -1pC | 4Ohm (Max) | -100dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5933DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5933dct1e3-datasheets-4639.pdf | 8-SMD, Flat Lead | 1.1W | SI5933 | 1206-8 ChipFET™ | 2.7A | 20V | 1.1W | 2 P-Channel (Dual) | 110mOhm @ 2.7A, 4.5V | 1V @ 250μA | 2.7A | 7.7nC @ 4.5V | Logic Level Gate | 110 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG721DN-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2014 | /files/vishaysiliconix-dg723dqt1ge3-datasheets-5589.pdf | 8-UFDFN Exposed Pad | 2.05mm | 550μm | 2.05mm | 2μA | 8 | 6 Weeks | 50.008559mg | No SVHC | 5.5V | 1.8V | 4.5Ohm | 8 | VIDEO APPLICATION | No | 2 | e4 | 842mW | DUAL | 3V | 0.5mm | 8 | 1 | Multiplexer or Switches | 3/5V | 2 | 366MHz | 30 ns | 35 ns | Single | SEPARATE OUTPUT | 4.5Ohm | 47 dB | 0.3Ohm | BREAK-BEFORE-MAKE | 40ns | 55ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 250pA | 8pF 9pF | 30ns, 35ns | 2.2pC | 200m Ω | -90dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7224DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7224dnt1ge3-datasheets-5443.pdf | PowerPAK® 1212-8 Dual | 3.3mm | 1.04mm | 3.3mm | 6 | 25 Weeks | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 23W | C BEND | 260 | SI7224 | 8 | 2 | Dual | 30 | 2 | FET General Purpose Power | S-XDSO-C6 | 20 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 17.8W 23W | 6A | 0.035Ohm | 30V | 2 N-Channel (Dual) | 570pF @ 15V | 35m Ω @ 6.5A, 10V | 2.2V @ 250μA | 14.5nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2788ADN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2788adnt1ge4-datasheets-3411.pdf | 16-UFQFN | 12 Weeks | 2 | 16-miniQFN (1.8x2.6) | 338MHz | 500mOhm | 2:1 | 1.8V~5.5V | SPDT | 100nA | 50μs, 1μs | -245pC | 50mOhm | -61dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SMMA511DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-smma511djt1ge3-datasheets-2383.pdf | PowerPAK® SC-70-6 Dual | 6 | No SVHC | 70 | yes | EAR99 | No | 6.5W | C BEND | 6 | 2 | Other Transistors | S-XDSO-C6 | 4.5A | 8V | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 0.04Ohm | N and P-Channel | 400pF @ 6V | 400 mV | 40m Ω @ 4.2A, 4.5V | 1V @ 250μA | 12nC @ 8V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 5μA | 5.08mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-DIP (0.300, 7.62mm) | 20.13mm | 7.62mm | 1μA | 16 | 10 Weeks | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG445 | 16 | 1 | NOT SPECIFIED | 470mW | Multiplexer or Switches | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 186.993455mg | Unknown | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.1W | GULL WING | 250 | SI9936 | 8 | 2 | Dual | 40 | 2 | FET General Purpose Powers | 10 ns | 15ns | 10 ns | 25 ns | 4.5A | 20V | SILICON | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 0.035Ohm | 2 N-Channel (Dual) | 35m Ω @ 6A, 10V | 3V @ 250μA | 13nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 5μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg444bdnt1e4-datasheets-2687.pdf | 16-VQFN Exposed Pad | 4mm | 950μm | 4mm | 1μA | 16 | 12 Weeks | 57.09594mg | 36V | 13V | 160Ohm | 16 | yes | unknown | 4 | e4 | PALLADIUM GOLD OVER NICKEL | 850mW | QUAD | NO LEAD | 260 | 15V | 0.65mm | DG445 | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | SPST | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3442BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si3442bdvt1e3-datasheets-3334.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 57mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 20mW | 1 | FET General Purpose Power | 35 ns | 50ns | 15 ns | 20 ns | 3A | 12V | SILICON | 1.8V | 860mW Ta | 3A | 20V | N-Channel | 295pF @ 10V | 1.8 V | 57m Ω @ 4A, 4.5V | 1.8V @ 250μA | 3A Ta | 5nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG202BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 50μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg201bdyt1e3-datasheets-0360.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | Lead Free | 50μA | 16 | 12 Weeks | 1.627801g | Unknown | 25V | 4.5V | 160Ohm | 16 | yes | No | 4 | 50μA | e3 | Matte Tin (Sn) | 470mW | 15V | DG202 | 16 | 1 | 470mW | Multiplexer or Switches | 12/+-15V | SPST | 300 ns | 200 ns | 22V | Dual, Single | 4.5V | -15V | 4 | SEPARATE OUTPUT | 85Ohm | 85Ohm | 90 dB | 2Ohm | BREAK-BEFORE-MAKE | NO | 4.5V~25V ±4.5V~22V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | 2 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2303CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si2303cdst1ge3-datasheets-4410.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 190mOhm | 3 | yes | EAR99 | unknown | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1W | 1 | Other Transistors | Not Qualified | 150°C | 4 ns | 37ns | 37 ns | 11 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1W Ta 2.3W Tc | -30V | P-Channel | 155pF @ 15V | -3 V | 190m Ω @ 1.9A, 10V | 3V @ 250μA | 2.7A Tc | 8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg411hsdnt1e4-datasheets-3972.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 13 Weeks | 547.485991mg | 44V | 13V | 80Ohm | 16 | yes | unknown | 4 | e3 | MATTE TIN | 600mW | GULL WING | 260 | 15V | 1.27mm | DG411 | 16 | 1 | 40 | 600mW | Multiplexer or Switches | Not Qualified | SPST | 105 ns | 105 ns | 22V | 15V | Dual, Single | 7V | -15V | 4 | SEPARATE OUTPUT | 35Ohm | 91 dB | BREAK-BEFORE-MAKE | 90ns | NC | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9936BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si9936bdyt1ge3-datasheets-2479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 186.993455mg | 35mOhm | 8 | No | 1.1W | SI9936 | 2 | Dual | 1.1W | 2 | 8-SO | 10 ns | 15ns | 15 ns | 25 ns | 6A | 20V | 30V | 1.1W | 35mOhm | 30V | 2 N-Channel (Dual) | 35mOhm @ 6A, 10V | 3V @ 250μA | 4.5A | 13nC @ 10V | Logic Level Gate | 35 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg406bdnt1e3-datasheets-9186.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 12 Weeks | 1.182714g | 36V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | Not Qualified | 125 ns | 94 ns | 20V | Multiplexer | 148 ns | Dual, Single | 5V | -15V | 16 | 60Ohm | 86 dB | 3Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 6pF 54pF | 107ns, 88ns | 11pC | 3 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| VQ1001P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2009 | /files/vishaysiliconix-vq1001p2-datasheets-6118.pdf | Lead Free | 14 | No | 2W | 2W | 4 | 14-DIP | 110pF | 830mA | 20V | 30V | 2W | 1.75Ohm | 4 N-Channel | 110pF @ 15V | 1.75Ohm @ 200mA, 5V | 2.5V @ 1mA | 830mA | Logic Level Gate | 1.75 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2012DL-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | 6-TSSOP, SC-88, SOT-363 | 2.2mm | 1mm | 1.35mm | Lead Free | 1μA | 6 | No SVHC | 5.5V | 1.8V | 1.8Ohm | 6 | yes | Tin | No | 1 | 10nA | e3 | Non-Inverting | 250mW | DUAL | GULL WING | 260 | 2V | DG2012 | 6 | 1 | 40 | 250mW | Multiplexer or Switches | 63 ns | 45 ns | Single | 2 | 100mA | 1 | 1.8Ohm | 1Ohm | 63 dB | 0.25Ohm | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 500pA | 20pF | 38ns, 32ns | 20pC | 250m Ω (Max) | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3483DDV-T1-GE3 | Vishay Siliconix | $0.42 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3483ddvt1ge3-datasheets-6957.pdf | SOT-23-6 Thin, TSOT-23-6 | 14 Weeks | 6-TSOP | 30V | 2W Ta 3W Tc | P-Channel | 580pF @ 15V | 31.2mOhm @ 5A, 10V | 2.2V @ 250μA | 6.4A Ta 8A Tc | 14.5nC @ 10V | 4.5V 10V | +16V, -20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2015 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 1.182714g | Unknown | 44V | 7.5V | 50Ohm | 28 | no | 1 | 50μA | e0 | Tin/Lead (Sn/Pb) | 450mW | QUAD | J BEND | 28 | 8 | DIFFERENTIAL MULTIPLEXER | 450mW | Multiplexer or Switches | 2 | Not Qualified | 600 ns | 300 ns | 20V | 350 ns | Dual, Single | 5V | 16 | 100Ohm | 100Ohm | BREAK-BEFORE-MAKE | 12V ±5V~20V | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4103DY-T1-GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4103dyt1ge3-datasheets-7798.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 2.5W Ta 5.2W Tc | P-Channel | 5200pF @ 15V | 7.9mOhm @ 10A, 10V | 2V @ 250μA | 14A Ta 16A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2008 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 1μA | 8 | 8 Weeks | 930.006106mg | 36V | 13V | 35Ohm | 8 | no | unknown | 1 | e0 | Tin/Lead (Sn/Pb) | 400mW | 2.54mm | 8 | 400mW | Multiplexer or Switches | Not Qualified | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 20mOhm | BREAK-BEFORE-MAKE | NC | 12V ±15V | 1:1 | SPST - NC | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA64DP-T1-RE3 | Vishay Siliconix | $0.75 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira64dpt1re3-datasheets-8296.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 27.8W Tc | N-Channel | 3420pF @ 15V | 2.1mOhm @ 10A, 10V | 2.2V @ 250μA | 60A Tc | 65nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG181AA/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-dg180aa-datasheets-7546.pdf | TO-100-10 Metal Can | 30Ohm | 10 | Yes | 2 | 450mW | 2 | TO-100-10 | 18V | 10V | 2 | 2 | 30Ohm | 1:1 | SPST - NC | ±15V | 1nA | 9pF 6pF | 150ns, 130ns | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3458BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si3458bdvt1e3-datasheets-9757.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 12ns | 10 ns | 18 ns | 4.1A | 20V | SILICON | SWITCHING | 3V | 2W Ta 3.3W Tc | 3.2A | 60V | N-Channel | 350pF @ 30V | 3 V | 100m Ω @ 3.2A, 10V | 3V @ 250μA | 4.1A Tc | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG200ABK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2003 | 14-CDIP (0.300, 7.62mm) | 14 Weeks | 70Ohm | 2 | 14-CERDIP | 70Ohm | 1:1 | SPST - NC | ±15V | 2nA | 9pF 9pF | 440ns, 340ns | -10pC | -90dB @ 1MHz |
