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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Feature | Terminal Finish | Applications | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Threshold Voltage | Power - Max | Power Dissipation-Max | Number of Inputs | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Feedback Cap-Max (Crss) | Switch-on Time-Max | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| DG534ADJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 600μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 20-DIP (0.300, 7.62mm) | 26.92mm | 3.81mm | 7.11mm | 500MHz | 2mA | 20 | 2.259996g | 18V | 10V | 90Ohm | 20 | yes | unknown | 1 | 600μA | e3 | T-Switch Configuration | Matte Tin (Sn) | Ultrasound, Video | 625mW | NOT SPECIFIED | 15V | DG534 | 20 | 2 | NOT SPECIFIED | 625mW | 515-3V | Not Qualified | 300 ns | 175 ns | 15V | 12V | Multiplexer | 300 ns | Dual, Single | 10V | -3V | 4 | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 500ns | 2:1 | 10V~21V | SPDT | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5402DC-T1-E3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5402dct1ge3-datasheets-6376.pdf | 8-SMD, Flat Lead | 8 | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | Single | 1.3W | 1 | FET General Purpose Powers | 10 ns | 10ns | 10 ns | 25 ns | 4.9A | 20V | SILICON | 1.3W Ta | 0.035Ohm | 30V | N-Channel | 35m Ω @ 4.9A, 10V | 1V @ 250μA (Min) | 4.9A Ta | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG541DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 3.5mA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 1.627801g | 18V | 10V | 60Ohm | 16 | No | RGB, T-Switch Configuration | Video | 470mW | 4 | 470mW | 16-PDIP | 500MHz | SPST | 70 ns | 50 ns | 15V | Multiplexer | Dual, Single | 10V | 4 | 4 | 60Ohm | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6473DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6473dqt1e3-datasheets-6434.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 12.5MOhm | 8 | EAR99 | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 80mW | 1 | Not Qualified | 42 ns | 33ns | 33 ns | 220 ns | 6.2A | 8V | SILICON | 20V | 20V | 1.08W Ta | P-Channel | 12.5m Ω @ 9.5A, 4.5V | 450mV @ 250μA (Min) | 6.2A Ta | 70nC @ 5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG540AP/883 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | 125°C | -55°C | 3.5mA | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 20-DIP (0.300, 7.62mm) | 18 Weeks | 18V | 10V | 60Ohm | 20 | No | RGB, T-Switch Configuration | Video | 4 | 20-DIP | 500MHz | SPST | 15V | Multiplexer | Dual, Single | 10V | 60Ohm | 3V~15V ±3V~15V | 1:1 | SPST | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6465DQ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si6465dqt1ge3-datasheets-6474.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | 157.991892mg | 8 | 1 | Single | 1.5W | 1 | 8-TSSOP | 30 ns | 60ns | 130 ns | 210 ns | 8.8A | 8V | 8V | 1.5W Ta | 12mOhm | -8V | P-Channel | 12mOhm @ 8.8A, 4.5V | 450mV @ 250μA (Min) | 8.8A Ta | 80nC @ 4.5V | 12 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ951EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sqj951ept1ge3-datasheets-1217.pdf | PowerPAK® SO-8 Dual | 12 Weeks | 8 | 56W | 56W | 2 | PowerPAK® SO-8 Dual | 1.68nF | 30A | 20V | 30V | 56W | 2 P-Channel (Dual) | 1680pF @ 10V | 17mOhm @ 7.5A, 10V | 2.5V @ 250μA | 30A | 50nC @ 10V | Standard | 17 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7356ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si7356adpt1ge3-datasheets-6511.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 506.605978mg | 3mOhm | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 25 ns | 18ns | 31 ns | 95 ns | 31A | 20V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 40A | 70A | 30V | N-Channel | 6215pF @ 15V | 3m Ω @ 20A, 10V | 3V @ 250μA | 40A Tc | 145nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7913DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si7913dnt1ge3-datasheets-1906.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 37mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.3W | C BEND | 260 | SI7913 | 8 | Dual | 40 | 1.3W | 2 | Other Transistors | S-XDSO-C6 | 20 ns | 70ns | 70 ns | 72 ns | -7.4A | 8V | SILICON | DRAIN | SWITCHING | 20V | METAL-OXIDE SEMICONDUCTOR | 5A | -20V | 2 P-Channel (Dual) | 37m Ω @ 7.4A, 4.5V | 1V @ 250μA | 5A | 24nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7156DP-T1-GE3 | Vishay Siliconix | $1.08 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7156dpt1e3-datasheets-6505.pdf | PowerPAK® SO-8 | 506.605978mg | 3.5mOhm | 1 | Single | PowerPAK® SO-8 | 6.9nF | 50A | 20V | 40V | 5.4W Ta 83W Tc | 3.5mOhm | N-Channel | 6900pF @ 20V | 3.5mOhm @ 20A, 10V | 3V @ 250μA | 50A Tc | 155nC @ 10V | 3.5 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1539CDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si1539cdlt1ge3-datasheets-3527.pdf | 6-TSSOP, SC-88, SOT-363 | 1.1mm | Lead Free | 6 | 14 Weeks | 28.009329mg | No SVHC | 6 | EAR99 | Tin | No | e3 | 340mW | DUAL | GULL WING | 6 | 290mW | 2 | 150°C | 32 ns | 19ns | 10 ns | 4 ns | 700mA | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.2V | 0.7A | 0.388Ohm | N and P-Channel | 28pF @ 15V | 388m Ω @ 600mA, 10V | 2.5V @ 250μA | 700mA 500mA | 1.5nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7402DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7402dnt1e3-datasheets-6584.pdf | PowerPAK® 1212-8 | 5 | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Powers | Not Qualified | S-XDSO-C5 | 35 ns | 110 ns | 13A | 8V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 50A | 0.0057Ohm | 12V | N-Channel | 5.7m Ω @ 20A, 4.5V | 850mV @ 250μA | 13A Ta | 55nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6926ADQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si6926adqt1e3-datasheets-4790.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 14 Weeks | 157.991892mg | Unknown | 30mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 830mW | GULL WING | 260 | SI6926 | 8 | 2 | Dual | 40 | 830mW | 2 | FET General Purpose Power | 6 ns | 16ns | 16 ns | 46 ns | 4.5A | 8V | SILICON | METAL-OXIDE SEMICONDUCTOR | 4.1A | 20V | 2 N-Channel (Dual) | 400 mV | 30m Ω @ 4.5A, 4.5V | 1V @ 250μA | 4.1A | 10.5nC @ 4.5V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7448DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7448dpt1e3-datasheets-6153.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | Single | 30 | 1 | R-PDSO-C5 | 22 ns | 22ns | 60 ns | 125 ns | 22A | 12V | SILICON | DRAIN | SWITCHING | 600mV | 1.9W Ta | 13.4A | 50A | 0.0065Ohm | 20V | N-Channel | 600 mV | 6.5m Ω @ 22A, 4.5V | 1.5V @ 250μA | 13.4A Ta | 50nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS932EDN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sis932ednt1ge3-datasheets-5907.pdf | PowerPAK® 1212-8 Dual | 1.17mm | 14 Weeks | 2 | 2.6W | 150°C | PowerPAK® 1212-8 Dual | 15 ns | 32 ns | 6A | 12V | 30V | 2.6W Ta 23W Tc | 18mOhm | 30V | 2 N-Channel (Dual) | 1000pF @ 15V | 22mOhm @ 10A, 4.5V | 1.4V @ 250μA | 6A Tc | 14nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6413DQ-T1-E3 | Vishay Siliconix | $0.94 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6413dqt1ge3-datasheets-4786.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 157.991892mg | 10mOhm | 8 | 1 | Single | 8-TSSOP | 55 ns | 120ns | 120 ns | 305 ns | 7.2A | 8V | 20V | 1.05W Ta | 10mOhm | P-Channel | 10mOhm @ 8.8A, 4.5V | 800mV @ 400μA | 7.2A Ta | 105nC @ 5V | 10 mΩ | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ342DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-siz342dtt1ge3-datasheets-7370.pdf | 8-PowerWDFN | 8 | 14 Weeks | EAR99 | unknown | YES | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | S-PDSO-N8 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 3.6W 4.3W | 26.5A | 100A | 0.0115Ohm | 5 mJ | 2 N-Channel (Dual) | 650pF @ 15V | 11.5m Ω @ 14A, 10V | 2.4V @ 250μA | 15.7A Ta 100A Tc | 20nC @ 10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI6465DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si6465dqt1ge3-datasheets-6474.pdf | 8-TSSOP (0.173, 4.40mm Width) | 3mm | 1mm | 4.4mm | Lead Free | 8 | 157.991892mg | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 1.5W | 1 | Not Qualified | 30 ns | 60ns | 60 ns | 210 ns | 8.8A | 8V | SILICON | 1.5W Ta | 30A | -8V | P-Channel | 12m Ω @ 8.8A, 4.5V | 450mV @ 250μA (Min) | 8.8A Ta | 80nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZF906DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sizf906dtt1ge3-datasheets-8842.pdf | 8-PowerWDFN | 6 | 14 Weeks | EAR99 | unknown | YES | DUAL | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-N6 | SILICON | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 38W Tc 83W Tc | 60A | 80A | 0.0038Ohm | 16 mJ | 2 N-Channel (Half Bridge) | 2000pF @ 15V 8200pF @ 15V | 3.8m Ω @ 15A, 10V, 1.17m Ω @ 20A, 10V | 2.2V @ 250μA | 60A Tc | 22nC @ 4.5V, 92nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3447CDV-T1-GE3 | Vishay Siliconix | $1.68 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3447cdvt1e3-datasheets-4184.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 15 Weeks | 19.986414mg | 36MOhm | 6 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 6 | 1 | Single | 2W | 1 | Other Transistors | 20 ns | 40ns | 20 ns | 35 ns | 6.3A | 8V | SILICON | SWITCHING | 12V | 2W Ta 3W Tc | 7.8A | P-Channel | 910pF @ 6V | 36m Ω @ 6.3A, 4.5V | 1V @ 250μA | 7.8A Tc | 30nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ200DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siz200dtt1ge3-datasheets-0138.pdf | 8-PowerWDFN | 14 Weeks | 8-PowerPair® (3.3x3.3) | 30V | 4.3W Ta 33W Tc | 2 N-Channel (Dual) | 1510pF @ 15V 1600pF @ 15V | 5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V | 2.4V @ 250μA | 22A Ta 61A Tc 22A Ta 60A Tc | 28nC @ 10V, 30nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5853DDC-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si5853ddct1e3-datasheets-2298.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 15 Weeks | 84.99187mg | 105mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 1.2W | 1 | 15 ns | 17ns | 17 ns | 21 ns | 2.9A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.3W Ta 3.1W Tc | P-Channel | 320pF @ 10V | 105m Ω @ 2.9A, 4.5V | 1V @ 250μA | 4A Tc | 12nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1028X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1028xt1ge3-datasheets-0746.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.7mm | 6 | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 220mW | FLAT | Dual | 220mW | 2 | 8 ns | 9 ns | 480mA | 20V | SILICON | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1V | 2 N-Channel (Dual) | 16pF @ 15V | 650m Ω @ 500mA, 10V | 2.5V @ 250μA | 2nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA425EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sia425edjt1ge3-datasheets-2443.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | 6 | 6 | yes | EAR99 | unknown | DUAL | NO LEAD | 260 | 6 | 40 | 2.9W | 1 | Other Transistors | Not Qualified | 10 ns | 4.5A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | DRAIN | SWITCHING | 20V | 20V | 2.9W Ta 15.6W Tc | P-Channel | 60m Ω @ 4.2A, 4.5V | 1V @ 250μA | 4.5A Tc | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1539EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1539eht1ge3-datasheets-3295.pdf | PowerPAK® SC-70-6 Dual | 6 | 12 Weeks | EAR99 | unknown | AEC-Q101 | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | N-CHANNEL AND P-CHANNEL | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.85A | 0.28Ohm | 10 pF | N and P-Channel | 48pF @ 15V 50pF @ 15V | 280m Ω @ 1A, 10V, 940m Ω @ 500mA, 10V | 2.6V @ 250μA | 850mA Tc | 1.4nC @ 4.5V, 1.6nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR876DP-T1-GE3 | Vishay Siliconix | $9.04 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir876dpt1ge3-datasheets-2553.pdf | PowerPAK® SO-8 | 5 | Unknown | 8 | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | Single | 40 | 5W | 1 | FET General Purpose Powers | R-XDSO-C5 | 28 ns | 31ns | 17 ns | 36 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.2V | 5W Ta 62.5W Tc | 100V | N-Channel | 1640pF @ 50V | 10.8m Ω @ 20A, 10V | 2.8V @ 250μA | 40A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7904BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7904bdnt1ge3-datasheets-7920.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 14 Weeks | 30mOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 17.8W | C BEND | 260 | SI7904 | 8 | Dual | 30 | 2.5W | 2 | FET General Purpose Powers | S-XDSO-C6 | 5 ns | 15ns | 5 ns | 25 ns | 6A | 8V | SILICON | DRAIN | AMPLIFIER | 20V | METAL-OXIDE SEMICONDUCTOR | 6A | 2 N-Channel (Dual) | 860pF @ 10V | 30m Ω @ 7.1A, 4.5V | 1V @ 250μA | 24nC @ 8V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7856ADP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7856adpt1e3-datasheets-3144.pdf | PowerPAK® SO-8 | 5 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 21 ns | 15ns | 30 ns | 100 ns | 15A | 20V | SILICON | DRAIN | SWITCHING | 1.9W Ta | 60A | 0.0037Ohm | 30V | N-Channel | 3.7m Ω @ 25A, 10V | 3V @ 250μA | 15A Ta | 55nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5504BDC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 8-SMD, Flat Lead | Lead Free | 8 | 14 Weeks | 84.99187mg | Unknown | 140mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 3.1W | DUAL | C BEND | 260 | SI5504 | 8 | 2 | 30 | 1.5W | 2 | Other Transistors | 3.7A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 3.12W 3.1W | 4A | 10A | 30V | N and P-Channel | 220pF @ 15V | 1.5 V | 65m Ω @ 3.1A, 10V | 3V @ 250μA | 4A 3.7A | 7nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE806DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie806dft1e3-datasheets-6367.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | 260 | 10 | Single | 30 | 5.2W | 1 | FET General Purpose Powers | R-PDSO-N4 | 85 ns | 41.3A | 12V | SILICON | DRAIN | SWITCHING | 5.2W Ta 125W Tc | 60A | 0.0021Ohm | 125 mJ | 30V | N-Channel | 13000pF @ 15V | 1.7m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 250nC @ 10V | 4.5V 10V | ±12V |
