Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Current - Supply | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Packing Method | Number of Functions | Voltage - Input (Max) | Max Input Voltage | JESD-609 Code | Feature | Terminal Finish | Applications | Case Code (Metric) | Surface Mount | Max Power Dissipation | Voltage - Supply | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Accuracy | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Supply Current-Max (Isup) | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Max Output Current | Min Input Voltage | Interface IC Type | Output Voltage | Output Current | Dropout Voltage | Output Type | Voltage - Input | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Voltage - Output 1 | Current - Output 1 | Threshold Voltage | Switching Frequency | Output Configuration | Power - Max | Output Voltage 1 | Input Voltage-Nom | Power Dissipation-Max | JEDEC-95 Code | Output Current Flow Direction | Topology | Voltage - Output 2 | Current - Output 2 | Output | Control Mode | Control Technique | Switcher Configuration | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Voltage - Output | Switch-on Time-Max | Current - Quiescent (Iq) | Dropout Voltage1-Nom | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Control Features | Voltage Tolerance-Max | Input Voltage Absolute-Max | Drain to Source Breakdown Voltage | Min Current Limit | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Number of Regulators | Protection Features | Voltage Dropout (Max) | PSRR | Frequency - Switching | Nominal Vgs | w/Sequencer | Voltage/Current - Output 1 | Voltage/Current - Output 2 | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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SIP21107DR-285-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip21106dr33e3-datasheets-7391.pdf | 5-TSSOP, SC-70-5, SOT-353 | 2mm | 1mm | 1.25mm | 5 | 19.986414mg | yes | EAR99 | No | TAPE AND REEL | 1 | 6V | e3 | Matte Tin (Sn) | 187mW | DUAL | GULL WING | 260 | 0.65mm | SIP21107-285 | 5 | 1 % | 10 | Other Regulators | R-PDSO-G5 | 150mA | 2.2V | 2.85V | 160mV | Fixed | 1 | Positive | 2.85V | 85μA | 0.16V | Enable, Power Good | 4% | 6.5V | 170mA | 1 | Over Temperature, Short Circuit | 0.22V @ 150mA | 72dB ~ 38dB (1kHz ~ 100kHz) | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1307DL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1307dlt1ge3-datasheets-6164.pdf | SC-70, SOT-323 | 3 | 3 | No | DUAL | GULL WING | 1 | 7.5 ns | 32ns | 11.5 ns | 17 ns | 850mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 12V | 290mW Ta | 0.85A | 0.29Ohm | P-Channel | 290m Ω @ 1A, 4.5V | 450mV @ 250μA (Min) | 850mA Ta | 5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIP21123DT-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | SOT-23-5 | SIP21123 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3879DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3879dvt1e3-datasheets-6215.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | Single | 2W | 6-TSOP | 480pF | 80ns | 10 ns | 20 ns | 5A | 12V | 20V | 2W Ta 3.3W Tc | 70mOhm | 20V | P-Channel | 480pF @ 10V | 70mOhm @ 3.5A, 4.5V | 1.5V @ 250μA | 5A Tc | 14.5nC @ 10V | 70 mΩ | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIP11203DLP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | 15.5mA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sip11203dlpt1e3-datasheets-6340.pdf | PowerPAK® MLP44-16 | 16 | Unknown | 16 | EAR99 | Secondary-Side Controller, Synchronous Rectifier | 5.5V~13V | QUAD | NO LEAD | SIP11203 | 16 | Not Qualified | 2.2A | HALF BRIDGE BASED PERIPHERAL DRIVER | 1 | SOURCE SINK | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4324DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4324dyt1ge3-datasheets-6256.pdf | 8-SOIC (0.154, 3.90mm Width) | No | Single | 8-SO | 3.51nF | 30 ns | 135ns | 13 ns | 30 ns | 24A | 20V | 30V | 3.5W Ta 7.8W Tc | 3.2mOhm | N-Channel | 3510pF @ 15V | 3.2mOhm @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 85nC @ 10V | 3.2 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI9121DY-3-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C | Bulk | 1 (Unlimited) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si9121dy3t1e3-datasheets-7766.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | -60V | 8 | 111 Weeks | 186.993455mg | yes | EAR99 | unknown | 1 | -60V | e3 | Matte Tin (Sn) | Converter, ISDN Power Supplies | DUAL | GULL WING | 260 | SI9121 | 8 | SWITCHING REGULATOR | 40 | Switching Regulator or Controllers | Not Qualified | R-PDSO-G8 | -10V | 250mA | -10V~-60V | 1 | 95kHz | 48V | CURRENT-MODE | PULSE WIDTH MODULATION | BUCK-BOOST | 3V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4406DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4406dyt1e3-datasheets-6305.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.88mm | 3.18mm | 3.91mm | 8 | 186.993455mg | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.6W | 1 | 21 ns | 15ns | 15 ns | 100 ns | 13A | 20V | SILICON | SWITCHING | 30V | 30V | 1.6W Ta | 0.0045Ohm | N-Channel | 4.5m Ω @ 20A, 10V | 3V @ 250μA | 13A Ta | 50nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIC403CD-T1-GE3 | Vishay Siliconix | $4.94 |
Min: 1 Mult: 1 |
download | microBUCK® | Surface Mount | Surface Mount | -40°C~85°C | Digi-Reel® | 3 (168 Hours) | 130μA | 0.9mm | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sic403cdt1ge3-datasheets-2667.pdf | 32-PowerVFQFN | 5mm | 5mm | 28V | Lead Free | 32 | No SVHC | 32 | EAR99 | ALSO OPERATES AS LDO REGULATOR | 1 | 28V | 3V~28V | QUAD | 0.5mm | SIC403 | 32 | SWITCHING REGULATOR | 6A | 3V | 5.5V | 6A | Adjustable | 2 | 5.5V | 6A | 12V | Step-Down (Buck) Synchronous (1), Linear (LDO) (1) | 750mV | 200mA | PULSE WIDTH MODULATION | 200kHz~1MHz | No | 0.75V~5.5V 6A | Adj to 0.75V 200mA | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4466DY-T1-GE3 | Vishay Siliconix | $16.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4466dyt1e3-datasheets-8333.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 30 | 1 | 20 ns | 15ns | 15 ns | 150 ns | 9.5A | 12V | SILICON | 20V | 20V | 1.5W Ta | MS-012AA | 50A | 0.009Ohm | N-Channel | 9m Ω @ 13.5A, 4.5V | 1.4V @ 250μA | 9.5A Ta | 60nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG538ADN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 600μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg534adne3-datasheets-2500.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 28 | 1.182714g | 90Ohm | 28 | yes | SELECTABLE DUAL 4-CHANNEL | unknown | 1 | e3 | T-Switch Configuration | Matte Tin (Sn) | Ultrasound, Video | QUAD | J BEND | 260 | 15V | DG538 | 28 | 2 | 40 | 515-3V | 5mA | Not Qualified | 500MHz | Multiplexer | Dual, Single | -3V | 90Ohm | 9Ohm | BREAK-BEFORE-MAKE | 175ns | 300ns | 4:1 | 10V~21V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI5484DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5484dut1e3-datasheets-8519.pdf | PowerPAK® ChipFET™ Single | 3mm | 750μm | 1.9mm | 8 | No | 1 | Single | PowerPAK® ChipFet Single | 1.6nF | 5 ns | 15ns | 10 ns | 35 ns | 12A | 12V | 20V | 3.1W Ta 31W Tc | 16mOhm | 20V | N-Channel | 1600pF @ 10V | 16mOhm @ 7.6A, 4.5V | 2V @ 250μA | 12A Tc | 55nC @ 10V | 16 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
DG542DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | 3.5mA | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg541dyt1e3-datasheets-2568.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 6mA | 16 | 1.627801g | 15V | -3V | 60Ohm | 16 | no | No | 4 | e0 | RGB, T-Switch Configuration | Tin/Lead (Sn/Pb) | Video | 470mW | 16 | 4 | Multiplexer or Switches | 100 ns | 60 ns | 15V | Dual, Single | 10V | SEPARATE OUTPUT | 60Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 1:1 | SPST | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4884BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4884bdyt1e3-datasheets-0139.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 13 Weeks | 506.605978mg | 9mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Powers | 8 ns | 11ns | 8 ns | 22 ns | 16.5A | 20V | SILICON | 30V | 30V | 2.5W Ta 4.45W Tc | N-Channel | 1525pF @ 15V | 9m Ω @ 10A, 10V | 3V @ 250μA | 16.5A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJ910AEP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 Dual | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PSSO-G4 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 48W | 30A | 120A | 0.007Ohm | 42 mJ | 2 N-Channel (Dual) | 1869pF @ 15V | 7m Ω @ 12A, 10V | 2.5V @ 250μA | 30A Tc | 39nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7160DP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7160dpt1ge3-datasheets-0207.pdf | PowerPAK® SO-8 | Lead Free | 5 | 8.7MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 30 | 5W | 1 | R-PDSO-C5 | 29 ns | 115ns | 21 ns | 43 ns | 17.8A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 27.7W Tc | 60A | 20 mJ | 30V | N-Channel | 2970pF @ 15V | 8.7m Ω @ 15A, 10V | 2.5V @ 250μA | 20A Tc | 66nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIZ902DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-siz902dtt1ge3-datasheets-1531.pdf | 8-PowerWDFN | 6mm | 750μm | 5mm | 6 | 14 Weeks | 8 | EAR99 | Tin | No | 66W | SIZ902 | 2 | Dual | 2 | FET General Purpose Power | R-PDSO-N6 | 10ns | 10 ns | 35 ns | 16A | 20V | SILICON | DRAIN SOURCE | SWITCHING | 30V | 30V | METAL-OXIDE SEMICONDUCTOR | 29W 66W | 50A | 16 mJ | 2 N-Channel (Half Bridge) | 790pF @ 15V | 12m Ω @ 13.8A, 10V | 2.2V @ 250μA | 21nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI3407DV-T1-E3 | Vishay Siliconix | $0.11 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3407dvt1ge3-datasheets-9665.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 19.986414mg | 6 | 1 | Single | 2W | 1 | 6-TSOP | 1.67nF | 32 ns | 62ns | 38 ns | 53 ns | 7.5A | 12V | 20V | 2W Ta 4.2W Tc | 24mOhm | P-Channel | 1670pF @ 10V | 24mOhm @ 7.5A, 4.5V | 1.5V @ 250μA | 8A Tc | 63nC @ 10V | 24 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJQ904E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjq904et1ge3-datasheets-2347.pdf | PowerPAK® 8 x 8 Dual | 4 | 14 Weeks | No SVHC | 6 | unknown | YES | 135W | SINGLE | GULL WING | 2 | R-PSSO-G4 | 100A | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DRAIN | 40V | 40V | METAL-OXIDE SEMICONDUCTOR | 2V | 75W | 300A | 0.0034Ohm | 125 mJ | 2 N-Channel (Dual) | 5900pF @ 20V | 3.4m Ω @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 75nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1405BDH-T1-E3 | Vishay Siliconix | $0.07 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1405bdht1e3-datasheets-6571.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 7.512624mg | 112mOhm | 6 | No | 1 | Single | 1.47W | 1 | SC-70-6 (SOT-363) | 305pF | 10 ns | 26ns | 26 ns | 16 ns | 1.6A | 8V | 8V | 1.47W Ta 2.27W Tc | 205mOhm | P-Channel | 305pF @ 4V | 112mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 1.6A Tc | 5.5nC @ 4.5V | 112 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIA533EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia533edjt1ge3-datasheets-4354.pdf | PowerPAK® SC-70-6 Dual | 800μm | Lead Free | 6 | 14 Weeks | 28.009329mg | Unknown | 34MOhm | 6 | EAR99 | 7.8W | C BEND | NOT SPECIFIED | SIA533 | 6 | 2 | Single | NOT SPECIFIED | 7.8W | 2 | Other Transistors | Not Qualified | 150°C | 4.5A | 8V | SILICON | DRAIN | SWITCHING | N-CHANNEL AND P-CHANNEL | 12V | METAL-OXIDE SEMICONDUCTOR | 400mV | 12V | N and P-Channel | 420pF @ 6V | 400 mV | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 15nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7452DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7452dpt1ge3-datasheets-6619.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 506.605978mg | 8.3mOhm | 1 | Single | PowerPAK® SO-8 | 45 ns | 15ns | 40 ns | 90 ns | 11.5A | 20V | 60V | 1.9W Ta | 8.3mOhm | 60V | N-Channel | 8.3mOhm @ 19.3A, 10V | 4.5V @ 250μA | 11.5A Ta | 160nC @ 10V | 8.3 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4946BEY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/vishaysiliconix-si4946beyt1e3-datasheets-5417.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 41mOhm | 8 | EAR99 | No | e3 | MATTE TIN | 2.4W | GULL WING | 260 | SI4946 | 8 | 2 | Dual | 40 | 2.4W | 2 | 175°C | 10 ns | 12ns | 10 ns | 25 ns | 6.5A | 20V | SILICON | 60V | METAL-OXIDE SEMICONDUCTOR | 2.4V | 3.7W | 5.3A | 30A | 60V | 2 N-Channel (Dual) | 840pF @ 30V | 41m Ω @ 5.3A, 10V | 3V @ 250μA | 25nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI7404DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7404dnt1e3-datasheets-6658.pdf | PowerPAK® 1212-8 | 5 | No SVHC | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1212 | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 27 ns | 39ns | 33 ns | 64 ns | 8.5A | 12V | SILICON | DRAIN | SWITCHING | 30V | 30V | 600mV | 1.5W Ta | 40A | N-Channel | 13m Ω @ 13.3A, 10V | 1.5V @ 250μA | 8.5A Ta | 30nC @ 4.5V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4804CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4804cdyt1ge3-datasheets-6283.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 22mOhm | 8 | yes | EAR99 | Tin | No | e3 | 1.2W | GULL WING | 260 | SI4804 | 8 | 2 | Dual | 30 | 3.1W | 2 | FET General Purpose Power | 17 ns | 13ns | 9 ns | 19 ns | 7.1A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.4V | 8A | 30V | 2 N-Channel (Dual) | 865pF @ 15V | 2.4 V | 22m Ω @ 7.5A, 10V | 2.4V @ 250μA | 8A | 23nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4324DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4324dyt1ge3-datasheets-6256.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 3.2mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | Single | 40 | 3.5W | 1 | FET General Purpose Power | 30 ns | 135ns | 13 ns | 30 ns | 24A | 20V | SILICON | SWITCHING | 3.5W Ta 7.8W Tc | 36A | 70A | 30V | N-Channel | 3510pF @ 15V | 3.2m Ω @ 20A, 10V | 2.5V @ 250μA | 36A Tc | 85nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SQJB80EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqjb80ept1ge3-datasheets-7905.pdf | PowerPAK® SO-8 Dual | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 2 | 48W | 2 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | DRAIN | METAL-OXIDE SEMICONDUCTOR | 84A | 0.019Ohm | 80V | 2 N-Channel (Dual) | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI1406DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1406dht1ge3-datasheets-1976.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | FET General Purpose Powers | 27 ns | 47ns | 29 ns | 54 ns | 3.1A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1W Ta | N-Channel | 65m Ω @ 3.9A, 4.5V | 1.2V @ 250μA | 3.1A Ta | 7.5nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SIZ346DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | PowerPAIR®, TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-siz346dtt1ge3-datasheets-9350.pdf | 8-PowerWDFN | 800μm | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | 2 | NOT SPECIFIED | 150°C | 16W 16.7W | 30V | 2 N-Channel (Dual) | 325pF @ 15V 650pF @ 15V | 28.5m Ω @ 10A, 10V, 11.5m Ω @ 14.4A, 10V | 2.2V @ 250μA, 2.4V @ 250μA | 17A Tc 30A Tc | 5nC @ 4.5V, 9nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SI4190DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4190dyt1ge3-datasheets-2143.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 8.8MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | 7.8W | DUAL | GULL WING | 260 | 8 | Single | 30 | 7.8W | 1 | FET General Purpose Power | 12 ns | 13ns | 11 ns | 40 ns | 20A | 20V | SWITCHING | 100V | N-Channel | 2000pF @ 50V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 20A Tc | 58nC @ 10V |
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