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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| DG613DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | NMOS | -1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | Lead Free | 1μA | 16 | 1.627801g | 18V | 10V | 45Ohm | 16 | yes | VIDEO APPLICATION | unknown | 4 | e3 | Matte Tin (Sn) | 470mW | NOT SPECIFIED | 15V | DG613 | 16 | 1 | SPST | NOT SPECIFIED | 470mW | Multiplexer or Switches | 1 | Not Qualified | 35 ns | 25 ns | 15V | Dual, Single | 10V | -3V | 4 | 45Ohm | 45Ohm | 74 dB | 2Ohm | BREAK-BEFORE-MAKE | 50ns | NO/NC | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG40N60E-GE3 | Vishay Siliconix | $26.85 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihg40n60ege3-datasheets-4734.pdf | TO-247-3 | 3 | 18 Weeks | NO | 1 | R-PSFM-T3 | SILICON | SWITCHING | 600V | 600V | 329W Tc | TO-247AC | 40A | 123A | 0.075Ohm | 691 mJ | N-Channel | 4436pF @ 100V | 75m Ω @ 20A, 10V | 4V @ 250μA | 40A Tc | 197nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | Lead Free | 1μA | 16 | 547.485991mg | 12V | 2.7V | 50Ohm | 16 | yes | No | 4 | 20nA | e3 | MATTE TIN | 650mW | GULL WING | 260 | 5V | 1.27mm | DG412 | 16 | 1 | 40 | 650mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | 4 | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU1N60APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 260 | 3 | 1 | Single | 40 | 36W | 1 | 9.8 ns | 14ns | 20 ns | 18 ns | 1.4A | 30V | SILICON | DRAIN | SWITCHING | 4V | 36W Tc | 5.6A | 7Ohm | 600V | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2031DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.1mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2031dqt1e3-datasheets-5308.pdf | 10-TFSOP, 10-MSOP (0.118, 3.00mm Width) | 3mm | 3mm | 100nA | 10 | 5.5V | 1.8V | 750mOhm | 10 | yes | No | 2 | 10nA | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.5mm | DG2031 | 10 | 1 | 40 | 320mW | Multiplexer or Switches | 3V | 58 ns | 49 ns | Single | 4 | 2 | 750mOhm | 71 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | 59ns | 2:1 | 1.8V~5.5V | SPDT | 1nA | 117pF | 58ns, 49ns | 4pC | 50m Ω (Max) | -71dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBE30SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfbe30lpbf-datasheets-7866.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 3Ohm | 3 | No | 1 | Single | 125W | 1 | D2PAK | 1.3nF | 12 ns | 33ns | 30 ns | 82 ns | 4.1A | 20V | 800V | 125W Tc | 3Ohm | N-Channel | 1300pF @ 25V | 3Ohm @ 2.5A, 10V | 4V @ 250μA | 4.1A Tc | 78nC @ 10V | 3 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2032DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2032dnt1e4-datasheets-5358.pdf | 12-VFQFN Exposed Pad | 3mm | 900μm | 3mm | Lead Free | 1μA | 12 | 10 Weeks | 21.99923mg | 5.5V | 1.8V | 5Ohm | 12 | yes | No | 2 | 10nA | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.295W | QUAD | 260 | 3V | 0.5mm | DG2032 | 12 | 1 | 40 | 1.295W | Multiplexer or Switches | 3V | 53 ns | 38 ns | Single | 4 | 2 | 5Ohm | 78 dB | BREAK-BEFORE-MAKE | 2:1 | 1.8V~5.5V | SPDT | 1nA | 15pF | 53ns, 38ns | 38pC | 400m Ω (Max) | -82dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60aege3-datasheets-8981.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 14 Weeks | YES | GULL WING | 1 | R-PSSO-G2 | SILICON | SWITCHING | 600V | 600V | 179W Tc | 20A | 49A | 0.18Ohm | 204 mJ | N-Channel | 1451pF @ 100V | 180m Ω @ 11A, 10V | 4V @ 250μA | 20A Tc | 96nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2717DX-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2717dxt1e3-datasheets-5385.pdf | SOT-563, SOT-666 | 1μA | 6 | 14 Weeks | 4.3V | 1.6V | 700mOhm | 6 | yes | unknown | 1 | 10nA | e3 | Matte Tin (Sn) | 172mW | DUAL | FLAT | 260 | 3V | 0.5mm | DG2717 | 6 | 1 | 40 | 172mW | Multiplexer or Switches | 1 | Not Qualified | 74 ns | 34 ns | Single | 2 | 1 | 700mOhm | 54 dB | 0.06Ohm | BREAK-BEFORE-MAKE | 44ns | NC | 2:1 | 1.6V~4.3V | SPDT | 76pF | 44ns, 29ns | 28pC | 600m Ω (Max) | -57dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2300DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-si2300dst1ge3-datasheets-1048.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 68MOhm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | FET General Purpose Power | 150°C | 5 ns | 15ns | 11 ns | 15 ns | 3.1A | 12V | SILICON | SWITCHING | 600mV | 1.1W Ta 1.7W Tc | 30V | N-Channel | 320pF @ 15V | 68m Ω @ 2.9A, 4.5V | 1.5V @ 250μA | 3.6A Tc | 10nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2742DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.45mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | SOT-23-8 | 1.65mm | 1μA | 8 | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | unknown | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2742 | 8 | 1 | 10 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | NC | 1:1 | 1.5V~3.6V | SPST - NC | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2333CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2333cdst1e3-datasheets-6790.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 35mOhm | 3 | yes | EAR99 | Tin | No | 71A | e3 | 12V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 2.5W | 1 | Other Transistors | 150°C | 13 ns | 35ns | 35 ns | 45 ns | -5.1A | 8V | SILICON | SWITCHING | -400mV | 1.25W Ta 2.5W Tc | -12V | P-Channel | 1225pF @ 6V | -1 V | 35m Ω @ 5.1A, 4.5V | 1V @ 250μA | 7.1A Tc | 25nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG309BDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1μA | 1.2mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg309bdqt1-datasheets-7732.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5mm | 16 | 44V | 4V | 160Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | GULL WING | 260 | 15V | 0.65mm | DG309 | 16 | 1 | 40 | Multiplexer or Switches | +-15V | 4 | SPST | 22V | Dual, Single | 4V | -15V | SEPARATE OUTPUT | 85Ohm | 90 dB | 1.7Ohm | BREAK-BEFORE-MAKE | 150ns | 200ns | NC | 4V~44V ±4V~22V | 1:1 | SPST - NC | 500pA | 5pF 5pF | 200ns, 150ns | 1pC | 1.7 Ω | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2338DS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-si2338dst1ge3-datasheets-3345.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | EAR99 | Tin | unknown | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.3W | 1 | FET General Purpose Power | 3 ns | 11ns | 7 ns | 20 ns | 6A | 20V | SILICON | SWITCHING | 2.5V | 1.3W Ta 2.5W Tc | 6A | 25A | 0.028Ohm | 30V | N-Channel | 424pF @ 15V | 28m Ω @ 5.5A, 10V | 2.5V @ 250μA | 6A Tc | 13nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417LDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2012 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 12 Weeks | 540.001716mg | 12V | 2.7V | 20Ohm | 8 | yes | VIDEO APPLICATION | No | 1 | e3 | MATTE TIN | 400mW | GULL WING | 260 | 5V | DG417 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | SPST | 41 ns | 32 ns | 6V | Dual, Single | 3V | -5V | 1 | 20Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | NC | 2.7V~12V ±3V~6V | 1:1 | SPST - NC | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2389ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq2389est1ge3-datasheets-5418.pdf | TO-236-3, SC-59, SOT-23-3 | 1.12mm | 3 | 12 Weeks | No SVHC | 3 | EAR99 | unknown | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 3W | 1 | 175°C | 7 ns | 12ns | 4 ns | 16 ns | -4.1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | 40V | 2V | 3W Tc | 54 pF | -40V | P-Channel | 420pF @ 20V | 94m Ω @ 10A, 10V | 2.5V @ 250μA | 4.1A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9233DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1.75mm | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9233dyt1-datasheets-2750.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 3.9mm | 8 | yes | unknown | 2 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3V | DG9233 | 8 | 1 | 40 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | R-PDSO-G8 | SEPARATE OUTPUT | 30Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF 13pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7655ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7655adnt1ge3-datasheets-6806.pdf | PowerPAK® 1212-8S | 5 | 14 Weeks | No SVHC | 3mOhm | 8 | EAR99 | DUAL | C BEND | NOT SPECIFIED | 1 | NOT SPECIFIED | 1 | S-PDSO-C5 | 45 ns | 45ns | 35 ns | 100 ns | -40A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 4.8W Ta 57W Tc | 20 mJ | -20V | P-Channel | 6600pF @ 10V | 3.6m Ω @ 20A, 10V | 1.1V @ 250μA | 40A Tc | 225nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9461DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg9461dvt1e3-datasheets-6647.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 | 540.001716mg | Unknown | 12V | 2.7V | 60Ohm | 8 | yes | No | 1 | e3 | MATTE TIN | 400mW | DUAL | GULL WING | 260 | 3V | DG9461 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 3/5V | 75 ns | 50 ns | Single | 2 | 1 | 60Ohm | 40Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 2:1 | 2.7V~5V | SPDT | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR474DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sir474dpt1ge3-datasheets-7539.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | 5 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | 40 | 3.9W | 1 | FET General Purpose Powers | R-XDSO-C5 | 14 ns | 12ns | 9 ns | 19 ns | 20A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.9W Ta 29.8W Tc | 50A | 0.0095Ohm | 20 mJ | 30V | N-Channel | 985pF @ 15V | 9.5m Ω @ 10A, 10V | 2.2V @ 250μA | 20A Tc | 27nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG643DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 15V | 500MHz | Lead Free | 6mA | 16 | 1.627801g | 21V | 10V | 15Ohm | 16 | yes | VIDEO APPLICATION | No | 2 | 3.5mA | e3 | Matte Tin (Sn) | 470mW | 15V | DG643 | 16 | 1 | AUDIO/VIDEO SWITCH | Multiplexer or Switches | 15-3V | 2 | 70 ns | 50 ns | 15V | Dual, Single | 10V | -3V | 15Ohm | 60 dB | 1Ohm | BREAK-BEFORE-MAKE | 85ns | 140ns | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 12pF 12pF | 70ns, 50ns | 19pC | 1 Ω | -87dB @ 5MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4800BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/vishaysiliconix-si4800bdyt1e3-datasheets-8385.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 14 Weeks | 8 | EAR99 | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 8 | 30 | 1 | Not Qualified | 9A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.3W Ta | 6.5A | N-Channel | 18.5m Ω @ 9A, 10V | 1.8V @ 250μA | 6.5A Ta | 13nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG642DJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 3.5mA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg641dy-datasheets-2728.pdf | 8-DIP (0.300, 7.62mm) | 10.92mm | 3.81mm | 7.11mm | 15V | 500MHz | 6mA | 8 | 2.26799g | Unknown | 18V | 10V | 8Ohm | 8 | yes | VIDEO APPLICATION | No | 1 | e3 | Matte Tin (Sn) | 300mW | 15V | DG642 | 8 | 1 | AUDIO/VIDEO SWITCH | 300mW | Multiplexer or Switches | SPST | 100 ns | 60 ns | 15V | 12V | Dual, Single | 10V | -3V | 2 | 1 | 8Ohm | 8Ohm | 63 dB | 0.5Ohm | BREAK-BEFORE-MAKE | 3V~15V ±3V~15V | 2:1 | SPDT | 10nA | 20pF 20pF | 100ns, 60ns | 40pC | 500m Ω | -85dB @ 5MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ420EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj420ept1ge3-datasheets-9342.pdf | PowerPAK® SO-8 | 1.267mm | 12 Weeks | 1 | 45W | 175°C | PowerPAK® SO-8 | 10 ns | 25 ns | 30A | 20V | 40V | 45W Tc | 8.2mOhm | 40V | N-Channel | 1860pF @ 25V | 10mOhm @ 9.7A, 10V | 2.5V @ 250μA | 30A Tc | 41nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9424DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | BICMOS | 5μA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg9424dqt1-datasheets-2818.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 16 | 172.98879mg | No SVHC | 12V | 2.7V | 1.8Ohm | 16 | ALSO OPERATES WITH 2.7V TO 12V SINGLE SUPPLY | Tin | No | 4 | 20nA | e3 | Non-Inverting | 450mW | GULL WING | 0.635mm | DG9424 | 1 | DPDT | 450mW | Multiplexer or Switches | SPST | 57 ns | 42 ns | 6V | 5V | Dual, Single | 3V | 100mA | 4 | 3Ohm | 1.7Ohm | 56 dB | BREAK-BEFORE-MAKE | 65ns | NO | 3V~16V ±3V~8V | 1:1 | SPST - NO | 1nA | 49pF 37pF | 51ns, 35ns | 38pC | -77dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414CENW-T1_GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq7414cenwt1ge3-datasheets-0299.pdf | PowerPAK® 1212-8W | 12 Weeks | PowerPAK® 1212-8W | 60V | 62W Tc | N-Channel | 1590pF @ 30V | 23mOhm @ 8.7A, 10V | 2.5V @ 250μA | 18A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32455EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32454dbt2ge1-datasheets-4013.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32455 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2319DDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si2319ddst1ge3-datasheets-2020.pdf | TO-236-3, SC-59, SOT-23-3 | 14 Weeks | SOT-23-3 (TO-236) | 40V | 1W Ta 1.7W Tc | P-Channel | 650pF @ 20V | 75mOhm @ 2.7A, 10V | 2.5V @ 250μA | 2.7A Ta 3.6A Tc | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32430EVB | Vishay Siliconix | $44.37 |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32430dnt1ge4-datasheets-2298.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32430 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3440DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3440dvt1ge3-datasheets-7527.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 375mOhm | 6 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 6 | 1 | Single | 1.14W | 1 | 8 ns | 10ns | 15 ns | 20 ns | 1.5A | 20V | SILICON | SWITCHING | 150V | 4V | 1.14W Ta | N-Channel | 4 V | 375m Ω @ 1.5A, 10V | 4V @ 250μA | 1.2A Ta | 8nC @ 10V | 6V 10V | ±20V |
