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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Diameter | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | Power Rating | Tolerance | JESD-609 Code | Temperature Coefficient | Terminal Finish | Composition | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power - Max | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI5853CDC-T1-E3 | Vishay Siliconix | $0.08 |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5853cdct1e3-datasheets-6493.pdf | 8-SMD, Flat Lead | Lead Free | 8 | 104mOhm | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | Other Transistors | 5 ns | 15ns | 15 ns | 20 ns | -4A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 1.5W Ta 3.1W Tc | 4A | P-Channel | 350pF @ 10V | 104m Ω @ 2.5A, 4.5V | 1V @ 250μA | 4A Tc | 11nC @ 8V | Schottky Diode (Isolated) | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SQ4961EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sq4961eyt1ge3-datasheets-1499.pdf | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 8 | No | 3.3W | 2 | 8-SO | 11 ns | 13ns | 8 ns | 36 ns | 4.4A | 20V | 60V | 3.3W | 2 P-Channel (Dual) | 1140pF @ 25V | 85mOhm @ 3.5A, 10V | 2.5V @ 250μA | 4.4A Tc | 40nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5485DU-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5485dut1e3-datasheets-8566.pdf | PowerPAK® ChipFET™ Single | 25mOhm | 1 | Single | PowerPAK® ChipFet Single | 1.1nF | 7 ns | 15ns | 80 ns | 50 ns | -12A | 12V | 20V | 3.1W Ta 31W Tc | 25mOhm | P-Channel | 1100pF @ 10V | 25mOhm @ 5.9A, 4.5V | 1.5V @ 250μA | 12A Tc | 42nC @ 8V | 25 mΩ | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4943CDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4943cdyt1e3-datasheets-1867.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | 19.2mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | 3.1W | GULL WING | 260 | SI4943 | 8 | 2 | Dual | 30 | 2W | 2 | 50 ns | 71ns | 15 ns | 29 ns | -8A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3.1W | 8A | -20V | 2 P-Channel (Dual) | 1945pF @ 10V | 19.2m Ω @ 8.3A, 10V | 3V @ 250μA | 8A | 62nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI4831BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4831bdyt1ge3-datasheets-6455.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 186.993455mg | 8 | 1 | 2W | 1 | 8-SO | 625pF | 8 ns | 8ns | 7 ns | 24 ns | -6.6A | 20V | 30V | 2W Ta 3.3W Tc | 42mOhm | -30V | P-Channel | 625pF @ 15V | 42mOhm @ 5A, 10V | 3V @ 250μA | 6.6A Tc | 26nC @ 10V | Schottky Diode (Isolated) | 42 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1026X-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si1026xt1ge3-datasheets-4252.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | Lead Free | 6 | 14 Weeks | 32.006612mg | Unknown | 3Ohm | 6 | yes | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) | 250mW | FLAT | 260 | SI1026 | 6 | Dual | 40 | 250mW | 2 | FET General Purpose Powers | 15 ns | 20 ns | 500mA | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 2.5V | 0.305A | 60V | 2 N-Channel (Dual) | 30pF @ 25V | 1.4 Ω @ 500mA, 10V | 2.5V @ 250μA | 305mA | 0.6nC @ 4.5V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||||||
| SI7405BDN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7405bdnt1ge3-datasheets-0240.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | Lead Free | 5 | 13 Weeks | 13mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1 | Other Transistors | S-XDSO-C5 | 22 ns | 60ns | 45 ns | 80 ns | 13.5A | 8V | SILICON | DRAIN | SWITCHING | 12V | 3.6W Ta 33W Tc | 40A | P-Channel | 3500pF @ 6V | 13m Ω @ 13.5A, 4.5V | 1V @ 250μA | 16A Tc | 115nC @ 8V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4922BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si4922bdyt1e3-datasheets-5484.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 16mOhm | 8 | yes | EAR99 | Tin | No | e3 | 2W | GULL WING | 260 | SI4922 | 8 | 2 | Dual | 30 | 2W | 2 | 13 ns | 53ns | 54 ns | 68 ns | 8A | 12V | SILICON | SWITCHING | 30V | METAL-OXIDE SEMICONDUCTOR | 1.8V | 3.1W | 8A | 30V | 2 N-Channel (Dual) | 2070pF @ 15V | 16m Ω @ 5A, 10V | 1.8V @ 250μA | 62nC @ 10V | Standard | |||||||||||||||||||||||||||||||||||||||||||
| SI7425DN-T1-E3 | Vishay Siliconix | $0.19 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7425dnt1ge3-datasheets-6629.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 16mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | Single | 40 | 1.5W | 1 | Other Transistors | S-XDSO-C5 | 30 ns | 55ns | 100 ns | 130 ns | 8.3A | 8V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 25A | 12V | P-Channel | 16m Ω @ 12.6A, 4.5V | 1V @ 300μA | 8.3A Ta | 39nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SI4554DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4554dyt1ge3-datasheets-6501.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | 14 Weeks | 506.605978mg | No SVHC | 8 | Tin | No | 3.2W | 2 | 2W | 2 | 150°C | 8-SO | 690pF | 42 ns | 40ns | 18 ns | 40 ns | 8A | 20V | 40V | 1V | 3.1W 3.2W | 21mOhm | 40V | N and P-Channel | 690pF @ 20V | 24mOhm @ 6.8A, 10V | 2.2V @ 250μA | 8A | 20nC @ 10V | Logic Level Gate | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4829DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | LITTLE FOOT® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4829dyt1e3-datasheets-6923.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | yes | EAR99 | unknown | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 40 | 1 | Other Transistors | Not Qualified | R-PDSO-G8 | 45ns | 10 ns | 15 ns | 2A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 2W Ta 3.1W Tc | 2A | 0.215Ohm | P-Channel | 210pF @ 10V | 215m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 2A Tc | 8nC @ 10V | Schottky Diode (Isolated) | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ914EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-sqj914ept1ge3-datasheets-7918.pdf | PowerPAK® SO-8 Dual | 12 Weeks | PowerPAK® SO-8 Dual | 30V | 27W Tc | 9.8mOhm | 2 N-Channel (Dual) | 1110pF @ 15V | 12mOhm @ 4.5A, 10V | 2.5V @ 250μA | 30A Tc | 25nC @ 10V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1417EDH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1417edht1e3-datasheets-7948.pdf | 6-TSSOP, SC-88, SOT-363 | Lead Free | 6 | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 30 | 1W | 1 | Other Transistors | 600 ns | 1.4μs | 4.9 μs | 4.9 μs | 2.7A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE AND RESISTOR | SWITCHING | 1W Ta | 0.085Ohm | P-Channel | 85m Ω @ 3.3A, 4.5V | 450mV @ 250μA (Min) | 2.7A Ta | 8nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7922DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7922dnt1ge3-datasheets-9020.pdf | PowerPAK® 1212-8 Dual | 3.05mm | 1.04mm | 3.05mm | Lead Free | 6 | 15 Weeks | 195mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.3W | C BEND | 260 | SI7922 | 8 | Dual | 30 | 1.3W | 2 | FET General Purpose Powers | S-XDSO-C6 | 7 ns | 11ns | 11 ns | 8 ns | 2.5A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 10A | 2 N-Channel (Dual) | 195m Ω @ 2.5A, 10V | 3.5V @ 250μA | 1.8A | 8nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||
| SI4470EY-T1-GE3 | Vishay Siliconix | $0.56 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4470eyt1e3-datasheets-8331.pdf | 8-SOIC (0.154, 3.90mm Width) | 506.605978mg | No SVHC | 8 | No | 1 | Single | 1.85W | 1 | 8-SO | 16 ns | 12ns | 30 ns | 50 ns | 9A | 20V | 60V | 2V | 1.85W Ta | 11mOhm | 60V | N-Channel | 2 V | 11mOhm @ 12A, 10V | 2V @ 250μA (Min) | 9A Ta | 70nC @ 10V | 11 mΩ | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIZ998DT-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | RoHS Compliant | 2017 | /files/vishaysiliconix-siz998dtt1ge3-datasheets-0405.pdf | 8-PowerWDFN | 14 Weeks | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 20V | 30V | 20.2W 32.9W | 2 N-Channel (Dual), Schottky | 930pF @ 15V 2620pF @ 15V | 6.7m Ω @ 15A, 10V, 2.8m Ω @ 19A, 10V | 2.2V @ 250μA | 20A Tc 60A Tc | 8.1nC @ 4.5V, 19.8nC @ 4.5V | Standard | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7462DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7462dpt1e3-datasheets-6195.pdf | PowerPAK® SO-8 | Lead Free | 5 | 130MOhm | yes | EAR99 | No | e3 | PURE MATTE TIN | 1.9W | DUAL | C BEND | 260 | 8 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-C5 | 15 ns | 15ns | 20 ns | 40 ns | 2.6A | 20V | DRAIN | SWITCHING | 12A | 1.8 mJ | 200V | N-Channel | 130m Ω @ 4.1A, 10V | 4V @ 250μA | 2.6A Ta | 30nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1912EH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sq1912eht1ge3-datasheets-1230.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | EAR99 | unknown | YES | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 2 | R-PDSO-G6 | SILICON | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 20V | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | 0.8A | 0.28Ohm | 12 pF | 2 N-Channel (Dual) | 75pF @ 10V | 280m Ω @ 1.2A, 4.5V | 1.5V @ 250μA | 800mA Tc | 1.15nC @ 4.5V | Standard | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1304BDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1304bdlt1e3-datasheets-7824.pdf | SC-70, SOT-323 | 3 | 3 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 3 | 30 | 340mW | 1 | FET General Purpose Powers | 10 ns | 30ns | 10 ns | 5 ns | 850mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | 30V | 340mW Ta 370mW Tc | 0.85A | 0.27Ohm | N-Channel | 100pF @ 15V | 270m Ω @ 900mA, 4.5V | 1.3V @ 250μA | 900mA Tc | 2.7nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4501BDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4501bdyt1ge3-datasheets-3768.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 540.001716mg | No SVHC | 8 | Tin | 4.5W | 2 | Dual | 2 | 8-SOIC | 805pF | 6 ns | 12ns | 9 ns | 35 ns | 12A | 8V | 30V 8V | 800mV | 4.5W 3.1W | 21mOhm | N and P-Channel, Common Drain | 805pF @ 15V | 17mOhm @ 10A, 10V | 2V @ 250μA | 12A 8A | 25nC @ 10V | Logic Level Gate | 17 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIE878DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie878dft1ge3-datasheets-2596.pdf | 10-PolarPAK® (L) | 4 | 10 | yes | EAR99 | ULTRA-LOW RESISTANCE | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 10 | 1 | 30 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-N4 | 15 ns | 15ns | 12 ns | 22 ns | 45A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN SOURCE | SWITCHING | 5.2W Ta 25W Tc | 0.0068Ohm | 25V | N-Channel | 1400pF @ 12.5V | 5.2m Ω @ 20A, 10V | 2.2V @ 250μA | 45A Tc | 36nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SI4936CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4936cdyt1ge3-datasheets-4603.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 40mOhm | 8 | EAR99 | Tin | No | e3 | 2.3W | GULL WING | 260 | SI4936 | 8 | 30 | 2.3W | 2 | 12 ns | 13ns | 13 ns | 16 ns | 5A | 20V | SILICON | SWITCHING | METAL-OXIDE SEMICONDUCTOR | 3V | 5A | 30V | 2 N-Channel (Dual) | 325pF @ 15V | 40m Ω @ 5A, 10V | 3V @ 250μA | 5.8A | 9nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SIE830DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | WFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie830dft1e3-datasheets-6381.pdf | 10-PolarPAK® (S) | 10 | No | Single | 5.2W | FET General Purpose Powers | 35 ns | 105ns | 95 ns | 70 ns | 27A | 12V | 5.2W Ta 104W Tc | 50A | 30V | N-Channel | 5500pF @ 15V | 4.2m Ω @ 16A, 10V | 2V @ 250μA | 50A Tc | 115nC @ 10V | 4.5V 10V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4599DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4599dyt1ge3-datasheets-5317.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 540.001716mg | Unknown | 45mOhm | 8 | EAR99 | Tin | No | e3 | 3.1W | DUAL | GULL WING | 260 | SI4599 | 8 | 2 | 40 | 3W | 2 | 44 ns | 33ns | 13 ns | 30 ns | 6.8A | 20V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | METAL-OXIDE SEMICONDUCTOR | 1.4V | 3W 3.1W | 5.6A | 40V | N and P-Channel | 640pF @ 20V | 35.5m Ω @ 5A, 10V | 3V @ 250μA | 6.8A 5.8A | 20nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||
| SIS424DN-T1-GE3 | Vishay Siliconix | $0.36 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis424dnt1ge3-datasheets-3213.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 15 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 40 | 1 | FET General Purpose Power | S-XDSO-C5 | 15 ns | 13ns | 10 ns | 20 ns | 35A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.7W Ta 39W Tc | 60A | 0.0064Ohm | 45 mJ | N-Channel | 1200pF @ 10V | 6.4m Ω @ 19.6A, 10V | 2.5V @ 250μA | 35A Tc | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI7942DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si7942dpt1e3-datasheets-7171.pdf | PowerPAK® SO-8 Dual | 4.9mm | 1.04mm | 5.89mm | 6 | 14 Weeks | 506.605978mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | 1.4W | C BEND | 260 | SI7942 | 8 | Dual | 40 | 1.4W | 2 | FET General Purpose Powers | R-XDSO-C6 | 15 ns | 15ns | 15 ns | 35 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | METAL-OXIDE SEMICONDUCTOR | 0.049Ohm | 2 N-Channel (Dual) | 49m Ω @ 5.9A, 10V | 4V @ 250μA | 24nC @ 10V | Logic Level Gate | |||||||||||||||||||||||||||||||||||||||||||||||
| SQD35N05-26L-GE3 | Vishay Siliconix | $0.31 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -65°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd35n0526lge3-datasheets-3259.pdf | 4.75mm | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 1.437803g | 2.26Ohm | 3 | Tin | No | 3W | 1% | 50 ppm/°C | Wirewound | 1 | Single | 50W | 1 | TO-252, (D-Pak) | 1.175nF | 5 ns | 18ns | 100 ns | 20 ns | 30A | 20V | 55V | 50W Tc | 20mOhm | 55V | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 20 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI3585CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3585cdvt1ge3-datasheets-9435.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 195mOhm | 6 | EAR99 | Tin | unknown | e3 | 1.3W | DUAL | GULL WING | 260 | 6 | 2 | 30 | 1.1W | 2 | Other Transistors | Not Qualified | 150°C | 3 ns | 10ns | 7 ns | 13 ns | 2.1A | 12V | SILICON | SWITCHING | N-CHANNEL AND P-CHANNEL | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5V | 1.4W 1.3W | MO-193AA | 3.9A | N and P-Channel | 150pF @ 10V | 58m Ω @ 2.5A, 4.5V | 1.5V @ 250μA | 3.9A 2.1A | 4.8nC @ 10V | Logic Level Gate | ||||||||||||||||||||||||||||||||||||||||||
| SUP18N15-95-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sup18n1595e3-datasheets-3299.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | 6.000006g | 3 | 1 | Single | 88W | TO-220-3 | 900pF | 8 ns | 35ns | 30 ns | 17 ns | 18A | 20V | 150V | 88W Tc | 95mOhm | 150V | N-Channel | 900pF @ 25V | 95mOhm @ 15A, 10V | 2V @ 250μA (Min) | 18A Tc | 25nC @ 10V | 95 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP460PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/vishaysiliconix-irfp460pbf-datasheets-2064.pdf | 500V | 20A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 270MOhm | 3 | No | 1 | Single | 280W | 1 | TO-247-3 | 4.2nF | 18 ns | 59ns | 58 ns | 110 ns | 20A | 20V | 500V | 4V | 280W Tc | 860 ns | 270mOhm | 500V | N-Channel | 4200pF @ 25V | 4 V | 270mOhm @ 12A, 10V | 4V @ 250μA | 20A Tc | 210nC @ 10V | 270 mΩ | 10V | ±20V |
