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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | Number of Outputs | Threshold Voltage | Power Dissipation-Max | Recovery Time | Number of Inputs | Output | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Signal Current-Max | Nominal Vgs | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI4456DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4456dyt1e3-datasheets-0440.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 14 Weeks | 186.993455mg | Unknown | 3.8mOhm | 8 | No | 1 | Single | 3.5W | 1 | 8-SO | 5.67nF | 21 ns | 58ns | 8 ns | 55 ns | 33A | 20V | 40V | 2.8V | 3.5W Ta 7.8W Tc | 3.8mOhm | 40V | N-Channel | 5670pF @ 20V | 3.8mOhm @ 20A, 10V | 2.8V @ 250μA | 33A Tc | 122nC @ 10V | 3.8 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | CMOS | ROHS3 Compliant | 2005 | /files/vishaysiliconix-dg413dj-datasheets-7502.pdf | 16-CDIP (0.300, 7.62mm) | 16 | 36V | 13V | 35Ohm | 16 | unknown | 4 | NO | DUAL | NOT SPECIFIED | 15V | 1 | NOT SPECIFIED | 4 | 22V | 7V | -15V | 35Ohm | 5V~44V ±5V~20V | 1:1 | SPST - NC | 250pA | 9pF 9pF | 175ns, 145ns | 5pC | -85dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI2307CDS-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si2307cdst1ge3-datasheets-1782.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.12mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 88MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 1.1W | 1 | Other Transistors | 150°C | 5.5 ns | 40ns | 40 ns | 17 ns | -2.7A | 20V | SILICON | SWITCHING | 30V | -3V | 1.1W Ta 1.8W Tc | -30V | P-Channel | 340pF @ 15V | -3 V | 88m Ω @ 3.5A, 10V | 3V @ 250μA | 3.5A Tc | 6.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG411HSAK | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~125°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 16-CDIP (0.300, 7.62mm) | 4 | 16-CERDIP | 35Ohm | 12V ±5V~20V | 1:1 | SPST - NC | 250pA | 12pF 12pF | 105ns, 80ns | 22pC | -88dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS92DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss92dnt1ge3-datasheets-3334.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 250V | 5.1W Ta 65.8W Tc | N-Channel | 350pF @ 125V | 173mOhm @ 3.6A, 10V | 4V @ 250μA | 3.4A Ta 12.3A Tc | 16nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG417AK-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~125°C TA | Tube | 1 (Unlimited) | ROHS3 Compliant | 2011 | 8-SOIC (0.154, 3.90mm Width) | 12 Weeks | 1 | 8-SOIC | 35Ohm | 1:1 | SPST - NC | ±15V | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50034E_GE3 | Vishay Siliconix | $1.29 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50034ege3-datasheets-3780.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 60V | 107W Tc | N-Channel | 6600pF @ 25V | 3.9mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG612EEY-T1-GE4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 2018 | /files/vishaysiliconix-dg612eent1ge4-datasheets-7435.pdf | 16-SOIC (0.154, 3.90mm Width) | 18 Weeks | 4 | 16-SOIC | 1GHz | 115Ohm | 3V~12V ±3V~5V | 1:1 | SPST - NO | 100pA | 3pF 3pF | 50ns, 35ns | 1.4pC | 2.5Ohm | -74dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS22DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss22dnt1ge3-datasheets-3928.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 60V | 5W Ta 65.7W Tc | N-Channel | 1870pF @ 30V | 4mOhm @ 15A, 10V | 3.6V @ 250μA | 25A Ta 90.6A Tc | 44nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 547.485991mg | 12V | 2.7V | 17Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 650mW | GULL WING | 1.27mm | 16 | 650mW | Multiplexer or Switches | 3/12/+-5V | 280MHz | 50 ns | 35 ns | 6V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 17Ohm | BREAK-BEFORE-MAKE | 85ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHFR1N60A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | EAR99 | unknown | 36W | 1 | FET General Purpose Power | 1.4A | 30V | Single | 600V | 36W Tc | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9431EDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg9431edvt1ge3-datasheets-9698.pdf | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay Siliconix | $2.39 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr626dpt1ge3-datasheets-4939.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 60V | 6.25W Ta 125W Tc | N-Channel | 5130pF @ 30V | 1.7mOhm @ 20A, 10V | 3.4V @ 250μA | 42.8A Ta 100A Tc | 102nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2002EDL-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-dg2002edlt1ge3-datasheets-1075.pdf | 6-TSSOP, SC-88, SOT-363 | 17 Weeks | 1 | SC-70-6 | 8Ohm | 2:1 | 1.8V~5.5V | SPDT | 1.5nA | 7pF 7pF | 30ns, 24ns | 1pC | 40mOhm (Typ) | -77dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBC30ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 74W | 1 | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG407DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 30μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg406dnt1e3-datasheets-9986.pdf | 28-LCC (J-Lead) | 12.57mm | 3.69mm | 12.57mm | 15V | 500μA | 28 | 12 Weeks | 1.182714g | 44V | 7.5V | 100Ohm | 28 | yes | unknown | 1 | 50μA | e3 | Matte Tin (Sn) | 450mW | QUAD | J BEND | 260 | 15V | DG407 | 28 | 8 | 40 | 450mW | 2 | Not Qualified | 600 ns | 300 ns | 20V | Multiplexer | 350 ns | Dual, Single | 5V | -15V | 16 | 100Ohm | 50Ohm | 69 dB | 5Ohm | BREAK-BEFORE-MAKE | 400ns | 12V ±5V~20V | 0.03A | 8:1 | 500pA | 8pF 65pF | 200ns, 150ns | 15pC | 5 Ω | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH11N60EF-T1-GE3 | Vishay Siliconix | $8.79 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh11n60eft1ge3-datasheets-5388.pdf | 8-PowerTDFN | 21 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 11A | 600V | 4V | 114W Tc | N-Channel | 1078pF @ 100V | 357m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 62nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG418DY-T1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | 2011 | /files/vishaysiliconix-dg417dyt1e3-datasheets-1245.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 8 Weeks | 540.001716mg | 36V | 13V | 35Ohm | 8 | no | No | 400mW | 8 | 400mW | 175 ns | 145 ns | 22V | 15V | Dual, Single | 7V | 1 | 35Ohm | 12V ±15V | 1:1 | SPST - NO | 250pA | 8pF 8pF | 175ns, 145ns | 60pC | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP15N60E-E3 | Vishay Siliconix | $8.85 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp15n60ee3-datasheets-5933.pdf | TO-220-3 | Lead Free | 19 Weeks | 6.000006g | 280mOhm | 3 | No | 1 | Single | 180W | 1 | TO-220AB | 1.35nF | 17 ns | 51ns | 33 ns | 35 ns | 15A | 20V | 600V | 180W Tc | 280mOhm | N-Channel | 1350pF @ 100V | 280mOhm @ 8A, 10V | 4V @ 250μA | 15A Tc | 78nC @ 10V | 280 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG442LDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | Non-RoHS Compliant | 2005 | /files/vishaysiliconix-dg441ldy-datasheets-2707.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 665.986997mg | 12V | 2.7V | 30Ohm | 16 | no | unknown | 4 | e0 | Tin/Lead (Sn/Pb) | 650mW | GULL WING | 1.27mm | 16 | 650mW | Multiplexer or Switches | Not Qualified | 280MHz | 60 ns | 35 ns | 6V | 5V | Dual, Single | 3V | 4 | SEPARATE OUTPUT | 30Ohm | BREAK-BEFORE-MAKE | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 1nA | 5pF 6pF | 60ns, 35ns | 5pC | 100m Ω | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHH24N65E-T1-GE3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihh24n65et1ge3-datasheets-6253.pdf | 8-PowerTDFN | 18 Weeks | 8 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 23A | 650V | 202W Tc | N-Channel | 2814pF @ 100V | 150m Ω @ 12A, 10V | 4V @ 250μA | 23A Tc | 116nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG445BDY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg444bdj-datasheets-7580.pdf | 16-SOIC (0.154, 3.90mm Width) | 10mm | 1.55mm | 4mm | 1μA | 16 | 8 Weeks | 665.986997mg | 36V | 13V | 80Ohm | 16 | no | unknown | 4 | e0 | TIN LEAD | YES | 640mW | GULL WING | 240 | 15V | 1.27mm | 16 | 1 | 30 | Multiplexer or Switches | 4 | Not Qualified | 300 ns | 200 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 80Ohm | 90 dB | BREAK-BEFORE-MAKE | NO | 12V ±15V | 1:1 | SPST - NO | 500pA | 5pF 5pF | 300ns, 200ns | 1pC | -95dB @ 100kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF30PBF | Vishay Siliconix | $19.13 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf30pbf-datasheets-6551.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | 3.7Ohm | 3 | No | 1 | Single | 125W | 1 | TO-247-3 | 1.2nF | 14 ns | 25ns | 30 ns | 90 ns | 3.6A | 20V | 900V | 125W Tc | 3.7Ohm | N-Channel | 1200pF @ 25V | 3.7Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 78nC @ 10V | 3.7 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9262DY | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | no | unknown | 400mW | 8 | 400mW | 75 ns | 50 ns | Single | 2 | 60Ohm | 40Ohm | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPF50PBF | Vishay Siliconix | $4.48 |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfpf50pbf-datasheets-6872.pdf | 900V | 6.7A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 1.6Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.9nF | 20 ns | 34ns | 37 ns | 130 ns | 6.7A | 20V | 900V | 4V | 190W Tc | 920 ns | 1.6Ohm | 900V | N-Channel | 2900pF @ 25V | 2 V | 1.6Ohm @ 4A, 10V | 4V @ 250μA | 6.7A Tc | 200nC @ 10V | 1.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG613DJ | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | Non-RoHS Compliant | 2009 | /files/vishaysiliconix-dg612dyt1-datasheets-2726.pdf | 16-DIP (0.300, 7.62mm) | 21.33mm | 3.81mm | 7.11mm | 500MHz | 1μA | 16 | 1.627801g | Unknown | 18V | 10V | 45Ohm | 16 | no | No | 4 | e0 | Tin/Lead (Sn/Pb) | 470mW | 16 | SPST | 470mW | Multiplexer or Switches | 1 | 35 ns | 25 ns | 15V | Dual, Single | 10V | 4 | 45Ohm | 45Ohm | BREAK-BEFORE-MAKE | 10V~18V ±10V~15V | 2:2 | DPDT | 250pA | 3pF 2pF | 35ns, 25ns | 4pC | 2 Ω | -87dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfu110pbf-datasheets-7868.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 540mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 25W | 1 | FET General Purpose Power | 6.9 ns | 16ns | 9.4 ns | 15 ns | 4.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 25W Tc | 75 mJ | 100V | N-Channel | 180pF @ 25V | 540m Ω @ 900mA, 10V | 4V @ 250μA | 4.3A Tc | 8.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM181BCA01 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | 1 (Unlimited) | 125°C | -55°C | Non-RoHS Compliant | 2009 | 14 | 825mW | 18V | 10V | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD020PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-irfd020pbf-datasheets-8701.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 3 | 8 Weeks | Unknown | 100mOhm | 4 | EAR99 | No | DUAL | 3 | Single | 1.3W | 1 | FET General Purpose Power | R-PDIP-T3 | 8.7 ns | 55ns | 26 ns | 16 ns | 2.4A | 20V | SILICON | SWITCHING | 50V | 4V | 1W Tc | 60V | N-Channel | 400pF @ 25V | 100m Ω @ 1.4A, 10V | 4V @ 250μA | 2.4A Tc | 24nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SJM190BXC | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | Non-RoHS Compliant | 2016 |
