Products
Manufacturer
RFQ
NEWS
ContactVishay Siliconix(12746)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Pbfree Code | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SIHP11N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/vishaysiliconix-sihp11n80ege3-datasheets-5529.pdf | TO-220-3 | 18 Weeks | 800V | 179W Tc | N-Channel | 1670pF @ 100V | 440m Ω @ 5.5A, 10V | 4V @ 250μA | 12A Tc | 88nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF840LCPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/vishaysiliconix-irf840lcpbf-datasheets-8729.pdf | 500V | 8A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 850mOhm | 3 | No | 1 | Single | 125W | 1 | TO-220AB | 1.1nF | 12 ns | 25ns | 19 ns | 27 ns | 8A | 30V | 500V | 500V | 4V | 125W Tc | 740 ns | 850mOhm | 500V | N-Channel | 1100pF @ 25V | 4 V | 850mOhm @ 4.8A, 10V | 4V @ 250μA | 8A Tc | 39nC @ 10V | 850 mΩ | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SI3493BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3493bdvt1e3-datasheets-9093.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | 27.5mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2.08W | 1 | Other Transistors | 22 ns | 72ns | 84 ns | 75 ns | 7A | 8V | SILICON | SWITCHING | 20V | 2.08W Ta 2.97W Tc | 8A | -20V | P-Channel | 1805pF @ 10V | 27.5m Ω @ 7A, 4.5V | 900mV @ 250μA | 8A Tc | 43.5nC @ 5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||
| IRF520SPBF | Vishay Siliconix | $1.06 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf520spbf-datasheets-0907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 3 | No | D2PAK | 360pF | 8.8 ns | 30ns | 20 ns | 19 ns | 9.2A | 20V | 100V | 3.7W Ta 60W Tc | N-Channel | 360pF @ 25V | 270mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHD690N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd690n60ege3-datasheets-1596.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252AA) | 600V | 62.5W Tc | N-Channel | 347pF @ 100V | 700mOhm @ 2A, 10V | 5V @ 250μA | 6.4A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHB22N60EF-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | EF | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihb22n60efge3-datasheets-1996.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | D2PAK (TO-263) | 600V | 179W Tc | N-Channel | 1423pF @ 100V | 182mOhm @ 11A, 10V | 4V @ 250μA | 19A Tc | 96nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS406DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sis406dnt1ge3-datasheets-2843.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 1.5W | 1 | FET General Purpose Power | S-XDSO-C5 | 20 ns | 12ns | 12 ns | 25 ns | 9A | 25V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 50A | 20 mJ | 30V | N-Channel | 1100pF @ 15V | 11m Ω @ 12A, 10V | 3V @ 250μA | 9A Ta | 28nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||
| SQJ474EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj474ept1ge3-datasheets-3703.pdf | PowerPAK® SO-8 | Lead Free | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100V | 100V | 45W Tc | 26A | 65A | 0.03Ohm | 24 mJ | N-Channel | 1100pF @ 25V | 30m Ω @ 10A, 10V | 2.5V @ 250μA | 26A Tc | 30nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| SIR664DP-T1-GE3 | Vishay Siliconix | $3.34 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir664dpt1ge3-datasheets-4773.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 8 | EAR99 | Tin | No | 5W | DUAL | C BEND | Single | 5W | 1 | R-PDSO-C5 | 12ns | 7 ns | 24 ns | 60A | 20V | DRAIN | SWITCHING | 0.006Ohm | 20 mJ | 60V | N-Channel | 1750pF @ 30V | 6m Ω @ 20A, 10V | 2.5V @ 250μA | 60A Tc | 40nC @ 10V | ||||||||||||||||||||||||||||||||||||||||||||
| SIRA04DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira04dpt1ge3-datasheets-5425.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.15mOhm | 8 | EAR99 | Tin | No | DUAL | C BEND | 1 | Single | 5W | 1 | R-PDSO-C5 | 24 ns | 16 ns | 30 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 62.5W Tc | 20 mJ | 30V | N-Channel | 3595pF @ 15V | 1.1 V | 2.15m Ω @ 15A, 10V | 2.2V @ 250μA | 40A Tc | 77nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||
| SIHA2N80E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha2n80ege3-datasheets-6696.pdf | TO-220-3 Full Pack | 18 Weeks | TO-220 Full Pack | 800V | 29W Tc | N-Channel | 315pF @ 100V | 2.75Ohm @ 1A, 10V | 4V @ 250μA | 2.8A Tc | 19.6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR844DP-T1-GE3 | Vishay Siliconix | $4.75 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir844dpt1ge3-datasheets-8137.pdf | PowerPAK® SO-8 | 5 | 21 Weeks | yes | EAR99 | No | DUAL | C BEND | 260 | 8 | 40 | 1 | R-XDSO-C5 | 23 ns | 21ns | 18 ns | 39 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 5W Ta 50W Tc | 30A | 70A | 0.0028Ohm | 80 mJ | 25V | N-Channel | 3215pF @ 10V | 2.8m Ω @ 15A, 10V | 2.6V @ 250μA | 50A Tc | 90nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF540STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf540spbf-datasheets-3481.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 77mOhm | 3 | No | 1 | Single | 3.7W | 1 | D2PAK (TO-263) | 1.7nF | 8.8 ns | 30ns | 20 ns | 19 ns | 28A | 20V | 100V | 3.7W Ta 150W Tc | 270mOhm | 100V | N-Channel | 1700pF @ 25V | 77mOhm @ 17A, 10V | 4V @ 250μA | 28A Tc | 72nC @ 10V | 12 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRF740STRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf740spbf-datasheets-9653.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 11 Weeks | 1.437803g | 550mOhm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 1.4nF | 14 ns | 27ns | 24 ns | 50 ns | 10A | 20V | 400V | 3.1W Ta 125W Tc | 550mOhm | 400V | N-Channel | 1400pF @ 25V | 550mOhm @ 6A, 10V | 4V @ 250μA | 10A Tc | 63nC @ 10V | 550 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SQD30N05-20L_T4GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sib422edkt1ge3-datasheets-2177.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 55V | 50W Tc | N-Channel | 1175pF @ 25V | 20mOhm @ 20A, 10V | 2.5V @ 250μA | 30A Tc | 18nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4401DDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4401ddyt1ge3-datasheets-6917.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 15mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 6.3W | 1 | Other Transistors | 150°C | 13 ns | 45 ns | -16.1A | 20V | SILICON | SWITCHING | 40V | -2.5V | 2.5W Ta 6.3W Tc | -40V | P-Channel | 3007pF @ 20V | 15m Ω @ 10.2A, 10V | 2.5V @ 250μA | 16.1A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQS484CENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs484cenwt1ge3-datasheets-8058.pdf | PowerPAK® 1212-8W | PowerPAK® 1212-8W | 40V | 62.5W Tc | N-Channel | 2350pF @ 25V | 9.5mOhm @ 10A, 10V | 2.5V @ 250μA | 16A Tc | 40nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR670DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sir670dpt1ge3-datasheets-8613.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | No | DUAL | C BEND | 1 | Single | 1 | R-PDSO-C5 | 42 ns | 81ns | 8 ns | 28 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 5W Ta 56.8W Tc | 200A | 60V | N-Channel | 2815pF @ 30V | 4.8m Ω @ 20A, 10V | 2.8V @ 250μA | 60A Tc | 63nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR846BDP-T1-RE3 | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir846bdpt1re3-datasheets-8911.pdf | PowerPAK® SO-8 | PowerPAK® SO-8 | 100V | 5W Ta 83.3W Tc | N-Channel | 2440pF @ 50V | 8mOhm @ 15A, 10V | 4V @ 250μA | 16.1A Ta 65.8 Tc | 52nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA46EP-T2_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj910aept1ge3-datasheets-0857.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 68W Tc | N-Channel | 5000pF @ 25V | 3mOhm @ 10A, 10V | 3.5V @ 250μA | 60A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1069X-T1-GE3 | Vishay Siliconix | $5.37 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si1069xt1ge3-datasheets-0322.pdf | SOT-563, SOT-666 | 1.7mm | 600μm | 1.2mm | 6 | 32.006612mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 30 | 1 | Other Transistors | 19 ns | 31ns | 31 ns | 23 ns | 940mA | 12V | SILICON | SWITCHING | 20V | 236mW Ta | 0.94A | -20V | P-Channel | 308pF @ 10V | 184m Ω @ 940mA, 4.5V | 1.5V @ 250μA | 6.86nC @ 5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||
| SQD40N10-25-T4_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n1025t4ge3-datasheets-0946.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 100V | 136W Tc | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUP10250E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | ThunderFET® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sup10250ege3-datasheets-1297.pdf | TO-220-3 | 14 Weeks | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 250V | 375W Tc | N-Channel | 4V @ 250μA | 63A Tc | 88nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF710SPBF | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irf710strlpbf-datasheets-8568.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 3.6Ohm | 3 | No | 1 | Single | 3.1W | 1 | D2PAK | 170pF | 8 ns | 9.9ns | 11 ns | 21 ns | 2A | 20V | 400V | 4V | 3.1W Ta 36W Tc | 3.6Ohm | 400V | N-Channel | 170pF @ 25V | 3.6Ohm @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 17nC @ 10V | 3.6 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SIHA17N80E-E3 | Vishay Siliconix | $4.62 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siha17n80ee3-datasheets-2770.pdf | TO-220-3 Full Pack | 18.1mm | 18 Weeks | 1 | 35W | 150°C | TO-220 Full Pack | 22 ns | 71 ns | 15A | 30V | 800V | 35W Tc | 250mOhm | 800V | N-Channel | 2408pF @ 100V | 290mOhm @ 8.5A, 10V | 4V @ 250μA | 15A Tc | 122nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA477EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sia477edjt1ge3-datasheets-2889.pdf | PowerPAK® SC-70-6 | 3 | 14 Weeks | yes | EAR99 | No | 19W | DUAL | 1 | S-PDSO-N3 | 12A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 12V | 12V | 40A | 0.014Ohm | P-Channel | 2970pF @ 6V | 14m Ω @ 7A, 4.5V | 1V @ 250μA | 12A Tc | 87nC @ 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU3N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sihu3n50dge3-datasheets-3951.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 104W | 1 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 500V | 500V | 3V | 69W Tc | 3A | 5.5A | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIHF530-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihfr420age3-datasheets-4094.pdf | TO-220-3 | 12 Weeks | TO-220AB | 100V | 88W Tc | N-Channel | 670pF @ 25V | 160mOhm @ 8.4A, 10V | 4V @ 250μA | 14A Tc | 26nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5424DC-T1-E3 | Vishay Siliconix | $0.15 |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si5424dct1e3-datasheets-5453.pdf | 8-SMD, Flat Lead | 8 | 21 Weeks | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 38ns | 9 ns | 26 ns | 6A | 25V | SILICON | SWITCHING | 2.5W Ta 6.25W Tc | 6A | 40A | 0.024Ohm | 30V | N-Channel | 950pF @ 15V | 24m Ω @ 4.8A, 10V | 2.3V @ 250μA | 6A Tc | 32nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| SIA465EDJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia465edjt1ge3-datasheets-6528.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 20V | 19W Tc | P-Channel | 2130pF @ 10V | 16.5mOhm @ 7A, 4.5V | 1.2V @ 250μA | 12A Tc | 72nC @ 10V | 2.5V 4.5V | ±12V |
