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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | Height Seated (Max) | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Operating Supply Voltage | Bandwidth | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | Number of Functions | Evaluation Kit | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Voltage | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Analog IC - Other Type | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Power Dissipation-Max | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Voltage - Output | Switch-on Time-Max | Normal Position | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Frequency - Switching | Main Purpose | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Voltage - Supply, Dual (V±) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SIHG30N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg30n60ege3-datasheets-4581.pdf | TO-247-3 | 15.87mm | 20.82mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 125mOhm | 3 | No | 1 | Single | 250W | 1 | TO-247AC | 2.6nF | 19 ns | 32ns | 36 ns | 63 ns | 29A | 20V | 600V | 2V | 250W Tc | 125mOhm | 600V | N-Channel | 2600pF @ 100V | 125mOhm @ 15A, 10V | 4V @ 250μA | 29A Tc | 130nC @ 10V | 125 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4157DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 50nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg4157dnt1e4-datasheets-4690.pdf | 6-UFDFN | 500nA | 12 Weeks | 5.5V | 1.65V | 1.2Ohm | 6 | yes | No | 160mW | DG4157 | 6 | 1 | 117MHz | 55 ns | 27 ns | Single | 1.2Ohm | 2:1 | 1.65V~5.5V | SPDT | 2nA | 20pF | 37ns, 23ns | 50pC | 120m Ω (Max) | -63dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR420APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-irfr420apbf-datasheets-7258.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 12 Weeks | 1.437803g | Unknown | 300mOhm | 3 | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 83W | 1 | R-PSSO-G2 | 8.1 ns | 12ns | 13 ns | 16 ns | 3.3A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 83W Tc | 500V | N-Channel | 340pF @ 25V | 3 Ω @ 1.5A, 10V | 4.5V @ 250μA | 3.3A Tc | 17nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2005DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2005dqt1e3-datasheets-5288.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | Lead Free | 1μA | 8 | 139.989945mg | 5.5V | 1.8V | 2.5Ohm | 8 | yes | unknown | 2 | 20nA | e3 | MATTE TIN | 320mW | DUAL | GULL WING | 260 | 2V | 0.65mm | DG2005 | 8 | 1 | 40 | 320mW | Not Qualified | SPST | 28 ns | 22 ns | Single | 2 | 2.5Ohm | 61 dB | 37ns | 47ns | 1:1 | 1.8V~5.5V | SPST - NO/NC | 1nA | 51pF | 28ns, 22ns | 1pC | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU6N80E-GE3 | Vishay Siliconix | $0.48 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihu6n80ege3-datasheets-7809.pdf | TO-251-3 Long Leads, IPak, TO-251AB | 18 Weeks | IPAK (TO-251) | 800V | 78W Tc | N-Channel | 827pF @ 100V | 940mOhm @ 3A, 10V | 4V @ 250μA | 5.4A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2037DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 20nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2037dst1-datasheets-7724.pdf | SOT-23-8 | 1μA | 8 | 5.5V | 1.8V | 5Ohm | 8 | No | 2 | 20nA | e3 | Matte Tin (Sn) | 515mW | DUAL | GULL WING | 0.635mm | DG2037 | DPDT | 515mW | Multiplexer or Switches | 3/5V | SPST | 35 ns | 31 ns | Single | 2 | SEPARATE OUTPUT | 5Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 15pF 17pF | 30ns, 22ns | 1pC | 200m Ω (Max) | -67dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9510SPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irf9510strlpbf-datasheets-7460.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3.7W | 1 | 200pF | 10 ns | 27ns | 17 ns | 15 ns | 4A | 20V | 100V | 4V | 43W Tc | 1.2Ohm | P-Channel | 200pF @ 25V | 4 V | 1.2Ohm @ 2.4A, 10V | 4V @ 250μA | 4A Tc | 8.7nC @ 10V | 1.2 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2616DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 100nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg2616dnt1e4-datasheets-5372.pdf | 10-VFDFN Exposed Pad | 3mm | 880μm | 3mm | 300μA | 10 | 50.008559mg | No SVHC | 3.6V | 1.5V | 7Ohm | 10 | yes | unknown | 2 | e4 | NICKEL PALLADIUM GOLD | 1.191W | DUAL | NO LEAD | 260 | 3V | 0.5mm | DG2616 | 10 | 1 | 40 | 1.191W | Multiplexer or Switches | 3V | Not Qualified | 69 ns | 39 ns | Single | 4 | 2 | 7Ohm | 4.2Ohm | 32 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 76ns | 2:1 | 1.5V~3.6V | SPDT | 2nA | 9pF | 69ns, 39ns | 7pC | 100m Ω | -80dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5471DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si5471dct1ge3-datasheets-0084.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 20mOhm | 8 | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 2.5W | 1 | 9 ns | 8ns | 22 ns | 78 ns | -6A | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 2.5W Ta 6.3W Tc | 6A | -20V | P-Channel | 2945pF @ 10V | 20m Ω @ 9.1A, 4.5V | 1.1V @ 250μA | 6A Tc | 96nC @ 10V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2743DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | 1.45mm | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | SOT-23-8 | 1.65mm | 1μA | 8 | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2743 | 8 | 1 | 10 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | 1:1 | 1.5V~3.6V | SPST - NO/NC | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ1421EDH-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sq1421edht1ge3-datasheets-1820.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 12 Weeks | No SVHC | 6 | EAR99 | unknown | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 1.6A | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -2V | 3.3W Tc | 0.29Ohm | 35 pF | P-Channel | 355pF @ 25V | 290m Ω @ 2A, 10V | 2.5V @ 250μA | 1.6A Tc | 5.4nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG306BDJ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2008 | /files/vishaysiliconix-dg306bdj-datasheets-7728.pdf | 14-DIP (0.300, 7.62mm) | 19.3mm | 3.81mm | 7.11mm | 15V | 100μA | 14 | 8 Weeks | 1.620005g | 36V | 13V | 50Ohm | 14 | yes | No | 2 | e3 | Matte Tin (Sn) | 470mW | 15V | DG306 | 14 | 1 | Multiplexer or Switches | 2 | DPST | 110 ns | 70 ns | 22V | 15V | Dual, Single | 7V | -15V | SEPARATE OUTPUT | 50Ohm | 62 dB | BREAK-BEFORE-MAKE | NO | 2:1 | DPST - NO | ±15V | 5nA | 14pF 14pF | 110ns, 70ns (Typ) | 30pC | -74dB @ 500kHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8466EDB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si8466edbt2e1-datasheets-2991.pdf | 4-UFBGA, WLCSP | 4 | 33 Weeks | 4 | EAR99 | unknown | BOTTOM | BALL | 1 | Single | 1.8W | 1 | 20 ns | 30ns | 20 ns | 80 ns | 5.4A | 700mV | SILICON | SWITCHING | 780mW Ta 1.8W Tc | 8V | N-Channel | 710pF @ 4V | 43m Ω @ 2A, 4.5V | 700mV @ 250μA | 13nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2729DN-T1-E4 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | 0.6mm | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg2727dnt1e4-datasheets-4554.pdf | 8-UFQFN | 1.4mm | 8 | 4.3V | 1.6V | 1Ohm | 8 | yes | 2 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | QUAD | NO LEAD | 260 | 3V | 0.4mm | DG2729 | 8 | 1 | 30 | Multiplexer or Switches | 2 | Not Qualified | 252MHz | SPST | Single | SEPARATE OUTPUT | 1Ohm | 58 dB | 0.1Ohm | BREAK-BEFORE-MAKE | 1:1 | 1.6V~4.3V | SPST - NO/NC | 100nA | 31pF 31pF | 67ns, 40ns | 1.2pC | 100m Ω | -64dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA64EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqja64ept1ge3-datasheets-5096.pdf | PowerPAK® SO-8 | 1.267mm | 14 Weeks | 1 | 45W | 175°C | PowerPAK® SO-8 | 9 ns | 15 ns | 15A | 20V | 60V | 45W Tc | 25.9mOhm | 60V | N-Channel | 670pF @ 25V | 32mOhm @ 4A, 10V | 3.5V @ 250μA | 15A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2743DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg2743dst1e3-datasheets-5403.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 3V | 1μA | 8 | No SVHC | 3.6V | 1.5V | 8Ohm | 8 | yes | VIDEO APPLICATION | unknown | 2 | 10nA | e3 | MATTE TIN | DUAL | GULL WING | 260 | 1.8V | 0.65mm | DG2743 | 8 | 1 | 40 | Multiplexer or Switches | Not Qualified | SPST | 45 ns | 40 ns | Single | 2 | SEPARATE OUTPUT | 800mOhm | 800mOhm | 55 dB | 0.05Ohm | BREAK-BEFORE-MAKE | 50ns | 1:1 | 1.5V~3.6V | SPST - NO/NC | 1nA | 81pF | 30ns, 28ns | 5.8pC | -89dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4056DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4056dyt1ge3-datasheets-6532.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 23MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 30 | 2.5W | 1 | 150°C | 11 ns | 20 ns | 7.3A | 20V | SILICON | SWITCHING | 2.8V | 2.5W Ta 5.7W Tc | 100V | N-Channel | 900pF @ 50V | 23m Ω @ 15A, 10V | 2.8V @ 250μA | 11.1A Tc | 29.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9263DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | 1μA | 8 | 139.989945mg | 12V | 2.7V | 60Ohm | 8 | yes | Tin | unknown | 2 | e3 | Non-Inverting | 400mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG9263 | 8 | 1 | 40 | Multiplexer or Switches | 3/5V | 2 | Not Qualified | SPST | 75 ns | 50 ns | Single | 20mA | 60Ohm | 74 dB | 0.4Ohm | BREAK-BEFORE-MAKE | NO | 1:1 | 2.7V~12V | SPST - NO | 100pA | 7pF | 75ns, 50ns | 2pC | 400m Ω | -90dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ415EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqj415ept1ge3-datasheets-7210.pdf | 8-PowerTDFN | 12 Weeks | PowerPAK® SO-8 | 40V | 45W Tc | P-Channel | 6000pF @ 25V | 14mOhm @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 95nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9432DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9433dqt1e3-datasheets-5516.pdf | 8-TSSOP, 8-MSOP (0.118, 3.00mm Width) Exposed Pad | 3mm | 850μm | 3mm | -1μA | 8 | 139.989945mg | 12V | 2.7V | 60Ohm | 8 | yes | 2 | e3 | Matte Tin (Sn) | 320mW | DUAL | GULL WING | 260 | 3V | 0.65mm | DG9432 | 8 | 1 | 30 | 320mW | Multiplexer or Switches | Not Qualified | SPST | 35 ns | 18 ns | Single | 2 | SEPARATE OUTPUT | 30Ohm | 77 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 100ns | 1:1 | 2.7V~12V | SPST - NC | 1nA | 7.5pF 7.8pF | 35ns, 18ns | 0.36pC | 300m Ω | -96dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS10DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss10dnt1ge3-datasheets-8207.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 57W Tc | N-Channel | 3750pF @ 20V | 2.65m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 75nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG419LDY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg419ldqt1e3-datasheets-6551.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 1μA | 8 | 12 Weeks | 540.001716mg | No SVHC | 12V | 2.7V | 18.5Ohm | 8 | yes | VIDEO APPLICATION | Tin | No | 1 | 20nA | e3 | Non-Inverting | 400mW | GULL WING | 260 | 5V | DG419 | 8 | 1 | 40 | 400mW | Multiplexer or Switches | 41 ns | 32 ns | 6V | 5V | Dual, Single | 3V | -5V | 2 | 30mA | 1 | 20Ohm | 35Ohm | 71 dB | BREAK-BEFORE-MAKE | 33ns | 44ns | 2.7V~12V ±3V~6V | 2:1 | SPDT | 1nA | 5pF | 43ns, 31ns | 1pC | -71dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4403CDY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4403cdyt1ge3-datasheets-8898.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 14 Weeks | 506.605978mg | No SVHC | 15.5mOhm | 8 | Tin | No | 1 | 2.5W | 1 | 8-SO | 2.38nF | 7 ns | 18ns | 41 ns | 108 ns | 13.4A | 8V | 20V | -400mV | 5W Tc | 15.5mOhm | 20V | P-Channel | 2380pF @ 10V | 15.5mOhm @ 9A, 4.5V | 1V @ 250μA | 13.4A Tc | 90nC @ 8V | 15.5 mΩ | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG604EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg604ent1e4-datasheets-7252.pdf | 14-TSSOP (0.173, 4.40mm Width) | 5mm | 900μm | 4.4mm | 290MHz | Lead Free | 500nA | 14 | 10 Weeks | 140.30179mg | 12V | 2.7V | 160Ohm | 14 | yes | unknown | 1 | e3 | MATTE TIN | YES | 450mW | GULL WING | 260 | 5V | DG604 | 14 | 1 | 40 | 450mW | 2 | Not Qualified | 400MHz | 108 ns | 76 ns | 5V | 3V | Multiplexer | 70 ns | Dual, Single | 2.7V | -5V | 30mA | 4 | 115Ohm | 72 dB | 1Ohm | BREAK-BEFORE-MAKE | 90ns | 2.7V~12V ±2.7V~5V | 1:1 | SPST - NO | 100pA | 2.7pF 7.3pF | 60ns, 52ns | 0.7pC | 1 Ω | -81dB @ 10MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS23DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -50°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-siss23dnt1ge3-datasheets-9713.pdf | PowerPAK® 1212-8S | 14 Weeks | No SVHC | 8 | EAR99 | No | Single | 4.8W | 1 | 50ns | 50 ns | 140 ns | 27A | 8V | 20V | 900mV | 4.8W Ta 57W Tc | -20V | P-Channel | 8840pF @ 15V | 4.5m Ω @ 20A, 4.5V | 900mV @ 250μA | 50A Tc | 300nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG2042DQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | CMOS | 1nA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg2043dnt1e4-datasheets-5348.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | Lead Free | 1μA | 16 | 172.98879mg | Unknown | 5.5V | 1.8V | 1.5Ohm | 16 | yes | No | 4 | e3 | Matte Tin (Sn) | 450mW | DUAL | GULL WING | 260 | 2V | 0.65mm | DG2042 | 16 | 1 | 30 | 450mW | Multiplexer or Switches | 2/5V | SPST | 42 ns | 32 ns | Single | 4 | SEPARATE OUTPUT | 1.5Ohm | 63 dB | 0.4Ohm | BREAK-BEFORE-MAKE | 82ns | NO | 1:1 | 1.8V~5.5V | SPST - NO | 1nA | 26pF | 42ns, 32ns | 3pC | 300m Ω (Max) | -93dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI5468DC-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si5468dct1ge3-datasheets-1673.pdf | 8-SMD, Flat Lead | 3.05mm | 1.1mm | 1.65mm | Lead Free | 8 | 14 Weeks | 84.99187mg | 28MOhm | 8 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | 30 | 2.3W | 1 | 5 ns | 10ns | 10 ns | 15 ns | 6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 2.3W Ta 5.7W Tc | 6A | N-Channel | 435pF @ 15V | 28m Ω @ 6.8A, 10V | 2.5V @ 250μA | 6A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32103EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32101dbt1ge1-datasheets-4693.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32103 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9120TRLPBF | Vishay Siliconix | $0.98 |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9120trpbf-datasheets-5334.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | 600MOhm | 3 | No | 56A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 390pF | 9.5 ns | 29ns | 25 ns | 21 ns | 5.6A | 20V | 100V | 2.5W Ta 42W Tc | 600mOhm | -100V | P-Channel | 390pF @ 25V | 600mOhm @ 3.4A, 10V | 4V @ 250μA | 5.6A Tc | 18nC @ 10V | 600 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI9121DB-3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | 70°C | -10°C | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-si9121dy3t1e3-datasheets-7766.pdf | SOIC | No | Yes | -10V~-60V | Si9121 | 3.3V | 400mA | Board(s) | 95kHz | DC/DC Converter | Fully Populated | 1, Non-Isolated | Buck-Boost |
