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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Supply Current | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Max Supply Current | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Max Supply Voltage | Min Supply Voltage | Resistance | Number of Pins | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | Number of Functions | Nominal Supply Current | JESD-609 Code | Terminal Finish | Polarity | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Power Supplies | Number of Circuits | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | -3db Bandwidth | Input Capacitance | Voltage - Input | Throw Configuration | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Logic Function | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | Propagation Delay | Supply Type | Function | Min Dual Supply Voltage | Neg Supply Voltage-Nom (Vsup) | DS Breakdown Voltage-Min | Number of Outputs | High Level Output Current | Threshold Voltage | Input Voltage (Max) | Power Dissipation-Max | Number of Inputs | Output | Utilized IC / Part | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | On-State Resistance (Max) | Drain to Source Resistance | Off-state Isolation-Nom | On-state Resistance Match-Nom | Switching | Switch-off Time-Max | Feedback Cap-Max (Crss) | Switch-on Time-Max | Normal Position | Avalanche Energy Rating (Eas) | Voltage - Supply, Single/Dual (±) | Current - Output | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Supplied Contents | Main Purpose | Signal Current-Max | Nominal Vgs | Board Type | Multiplexer/Demultiplexer Circuit | Voltage - Supply, Single (V+) | Switch Circuit | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) | Outputs and Type | Regulator Topology | Current - Leakage (IS(off)) (Max) | Channel Capacitance (CS(off), CD(off)) | Switch Time (Ton, Toff) (Max) | Charge Injection | Channel-to-Channel Matching (ΔRon) | Crosstalk |
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| SI1469DH-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si1469dht1e3-datasheets-7724.pdf | 6-TSSOP, SC-88, SOT-363 | 6 | 14 Weeks | 7.512624mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.5W | 1 | Other Transistors | 3.2A | 12V | SILICON | SWITCHING | 20V | 20V | 1.5W Ta 2.78W Tc | 2.7A | 8A | 0.08Ohm | P-Channel | 470pF @ 10V | 80m Ω @ 2A, 10V | 1.5V @ 250μA | 2.7A Tc | 8.5nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG412LDQ-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | BICMOS | 1μA | ROHS3 Compliant | 2017 | /files/vishaysiliconix-dg411ldqt1-datasheets-8917.pdf | 16-TSSOP (0.173, 4.40mm Width) | 5.08mm | 920μm | 4.4mm | 1μA | 16 | 172.98879mg | 12V | 2.7V | 50Ohm | 16 | yes | 4 | e3 | Matte Tin (Sn) | 450mW | GULL WING | 260 | 5V | 0.65mm | DG412 | 16 | 1 | 40 | Multiplexer or Switches | 3/12/+-5V | 4 | Not Qualified | 280MHz | SPST | 50 ns | 35 ns | 6V | Dual, Single | 3V | -5V | SEPARATE OUTPUT | 17Ohm | 68 dB | BREAK-BEFORE-MAKE | 60ns | NO | 2.7V~12V ±3V~6V | 1:1 | SPST - NO | 250pA | 5pF 6pF | 19ns, 12ns | 5pC | -95dB @ 1MHz | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3460BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si3460bdvt1e3-datasheets-9746.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | FET General Purpose Power | 5 ns | 15ns | 5 ns | 25 ns | 6.7A | 8V | SILICON | SWITCHING | 1V | 2W Ta 3.5W Tc | 8A | 20A | 0.027Ohm | 20V | N-Channel | 860pF @ 10V | 1 V | 27m Ω @ 5.1A, 4.5V | 1V @ 250μA | 8A Tc | 24nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG9262DY-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | 85°C | -40°C | 1μA | ROHS3 Compliant | 2013 | /files/vishaysiliconix-dg9263dy-datasheets-2747.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 1μA | 540.001716mg | 12V | 2.7V | 60Ohm | 8 | 400mW | DG9262 | 2 | 400mW | 2 | 8-SOIC | SPST | 75 ns | 50 ns | Single | 2 | 2 | 60Ohm | 1:1 | 2.7V~12V | SPST - NC | 100pA | 7pF | 75ns, 50ns | 2pC | 400mOhm | -90dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQS482EN-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqs482ent1ge3-datasheets-7303.pdf | PowerPAK® 1212-8 | 12 Weeks | PowerPAK® 1212-8 | 30V | 62W Tc | N-Channel | 1865pF @ 25V | 8.5mOhm @ 16.4A, 10V | 2.5V @ 250μA | 16A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG4599DL-T1-E3-HF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tape & Reel (TR) | 1 (Unlimited) | 10nA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg4599dlt1e3-datasheets-3973.pdf | 6-TSSOP, SC-88, SOT-363 | 60Ohm | DG4599 | 1 | Single | 60Ohm | 2:1 | 2.25V~5.5V | SPDT | 1nA | 7pF 20pF | 30ns, 25ns | 5pC | -70dB @ 1MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI8416DB-T2-E1 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si8416dbt2e1-datasheets-8279.pdf | 6-UFBGA | 1.5mm | 310μm | 1mm | 43 Weeks | No SVHC | 6 | EAR99 | No | e3 | Matte Tin (Sn) | 1 | Single | 2.77W | FET General Purpose Powers | 13 ns | 30ns | 20 ns | 40 ns | 16A | 5V | 8V | 350mV | 2.77W Ta 13W Tc | N-Channel | 1470pF @ 4V | 23m Ω @ 1.5A, 4.5V | 800mV @ 250μA | 16A Tc | 26nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG429DW-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~85°C TA | Tube | 1 (Unlimited) | CMOS | 20μA | ROHS3 Compliant | 2009 | /files/vishaysiliconix-dg428dje3-datasheets-5967.pdf | 18-SOIC (0.295, 7.50mm Width) | 12.45mm | 2.6mm | 8mm | 100μA | 18 | 8 Weeks | 36V | 13V | 150Ohm | 18 | No | 1 | 100μA | e3 | Matte Tin (Sn) | 470mW | GULL WING | 15V | DG429 | 18 | 4 | 470mW | 2 | 300 ns | 300 ns | 22V | Multiplexer | 250 ns | Dual, Single | 7V | -15V | 8 | 100Ohm | 75 dB | 5Ohm | BREAK-BEFORE-MAKE | 12V ±15V | 0.03A | 4:1 | SP4T | 500pA | 11pF 20pF | 150ns, 150ns | 1pC | 5 Ω | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3459BDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e4 | Silver (Ag) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.9A | 20V | SILICON | SWITCHING | 60V | -3V | 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DG636EQ-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | Surface Mount | -40°C~125°C TA | Tape & Reel (TR) | 1 (Unlimited) | 1μA | ROHS3 Compliant | 2016 | /files/vishaysiliconix-dg636ent1e4-datasheets-4736.pdf | 14-TSSOP (0.173, 4.40mm Width) | 5mm | 900μm | 4.4mm | Lead Free | 500nA | 14 | 12 Weeks | 140.30179mg | 12V | 2.7V | 160Ohm | 14 | yes | No | 2 | e3 | Matte Tin (Sn) | Non-Inverting | 450mW | GULL WING | 5V | DG636 | 14 | 2 | 450mW | 610MHz | 60 ns | 52 ns | 5V | 3V | Dual, Single | 2.7V | -5V | 4 | 30mA | 5V | 2 | 115Ohm | 58 dB | 1Ohm | BREAK-BEFORE-MAKE | 76ns | 90ns | 2.7V~12V ±2.7V~5V | 100A | 2:1 | SPDT | 100pA | 2.1pF 4.2pF | 60ns, 52ns | 0.1pC | 1 Ω | -88dB @ 10MHz | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4884BDY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4884bdyt1e3-datasheets-0139.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 506.605978mg | 9mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Powers | 8 ns | 11ns | 8 ns | 22 ns | 16.5A | 20V | SILICON | SWITCHING | 2.5W Ta 4.45W Tc | 30V | N-Channel | 1525pF @ 15V | 9m Ω @ 10A, 10V | 3V @ 250μA | 16.5A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32453EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32453dbt2ge1-datasheets-8330.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32453 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA88DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sira88dpt1ge3-datasheets-1796.pdf | PowerPAK® SO-8 | 1.17mm | 5 | 14 Weeks | EAR99 | S17-0173-Single | unknown | YES | DUAL | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 3.3W | 1 | 150°C | R-PDSO-F5 | 28 ns | 8 ns | 16.5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 25W Tc | 45.5A | 0.0067Ohm | 5 mJ | 30V | N-Channel | 985pF @ 15V | 6.7m Ω @ 10A, 10V | 2.4V @ 250μA | 45.5A Tc | 12.5nC @ 4.5V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIP32468EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Power Management | 1 (Unlimited) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sip32468dbt2ge1-datasheets-2879.pdf | 8 Weeks | Power Distribution Switch (Load Switch) | SIP32468 | Board(s) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4100DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4100dyt1e3-datasheets-6999.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 10 ns | 12ns | 10 ns | 15 ns | 4.4A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 6W Tc | 0.063Ohm | 100V | N-Channel | 600pF @ 50V | 63m Ω @ 4.4A, 10V | 4.5V @ 250μA | 6.8A Tc | 20nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC462EVB | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 1 (Unlimited) | ROHS3 Compliant | /files/vishaysiliconix-sic464edt1ge3-datasheets-4714.pdf | 17 Weeks | 4.5V~60V | SIC462 | 6A | Board(s) | DC/DC, Step Down | Fully Populated | 1, Non-Isolated | Buck | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD25N06-22L_T4GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n0622lge3-datasheets-3819.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 1 | TO-252AA | 60V | 62W Tc | N-Channel | 1975pF @ 25V | 22mOhm @ 20A, 10V | 2.5V @ 250μA | 25A Tc | 50nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIC431AEVB-A | Vishay Siliconix |
Min: 1 Mult: 1 |
download | 9 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40061EL_GE3 | Vishay Siliconix | $11.21 |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40061elge3-datasheets-7324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 40V | 107W Tc | P-Channel | 14500pF @ 25V | 5.1mOhm @ 30A, 10V | 2.5V @ 250μA | 100A Tc | 280nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| V30392-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR50N04-3M8_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr50n043m8ge3-datasheets-7934.pdf | TO-252-4, DPak (3 Leads + Tab) | 12 Weeks | EAR99 | unknown | 40V | 136W Tc | N-Channel | 6700pF @ 25V | 3.8m Ω @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 105nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFPS37N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfps37n50a-datasheets-0452.pdf | TO-274AA | 16.1mm | 20.8mm | 5.3mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 130mOhm | 3 | No | 1 | Single | 446W | 1 | SUPER-247™ (TO-274AA) | 5.579nF | 23 ns | 98ns | 80 ns | 52 ns | 36A | 30V | 500V | 4V | 446W Tc | 130mOhm | 400V | N-Channel | 5579pF @ 25V | 130mOhm @ 22A, 10V | 4V @ 250μA | 36A Tc | 180nC @ 10V | 130 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS892DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-sis892dnt1ge3-datasheets-8483.pdf | PowerPAK® 1212-8 | 1.12mm | Lead Free | 5 | 14 Weeks | Unknown | 8 | EAR99 | No | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.7W | 1 | 150°C | S-XDSO-C5 | 10 ns | 17 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.7W Ta 52W Tc | 50A | 0.029Ohm | 5 mJ | 100V | N-Channel | 611pF @ 50V | 29m Ω @ 10A, 10V | 3V @ 250μA | 30A Tc | 21.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ7414AENW-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | /files/vishaysiliconix-sq7414aenwt1ge3-datasheets-5363.pdf | PowerPAK® 1212-8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60V | 62W Tc | N-Channel | 1590pF @ 30V | 23m Ω @ 8.7A, 10V | 2.5V @ 250μA | 18A Tc | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7456DDP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si7456ddpt1ge3-datasheets-9219.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | Lead Free | 5 | 14 Weeks | Unknown | 42MOhm | 8 | EAR99 | No | DUAL | C BEND | Single | 5W | 1 | R-PDSO-C5 | 13 ns | 14ns | 10 ns | 19 ns | 27.8A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 5W Ta 35.7W Tc | 70A | 100V | N-Channel | 900pF @ 50V | 23m Ω @ 10A, 10V | 2.8V @ 250μA | 27.8A Tc | 29.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU9110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9110trpbf-datasheets-7143.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 10 ns | 27ns | 17 ns | 15 ns | 3.1A | 20V | SILICON | DRAIN | SWITCHING | 100V | -2V | 2.5W Ta 25W Tc | -100V | P-Channel | 200pF @ 25V | 1.2 Ω @ 1.9A, 10V | 4V @ 250μA | 3.1A Tc | 8.7nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4490DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si4490dyt1e3-datasheets-9674.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | Unknown | 80mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 14 ns | 20ns | 20 ns | 32 ns | 4A | 20V | SILICON | 2V | 1.56W Ta | 200V | N-Channel | 2 V | 80m Ω @ 4A, 10V | 2V @ 250μA (Min) | 2.85A Ta | 42nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHP4N80E-GE3 | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
download | E | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihp4n80ege3-datasheets-3224.pdf | TO-220-3 | 18 Weeks | TO-220AB | 800V | 69W Tc | N-Channel | 622pF @ 100V | 1.27Ohm @ 2A, 10V | 4V @ 250μA | 4.3A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD40N10-25_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd40n1025ge3-datasheets-1109.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | 136W | 1 | TO-252, (D-Pak) | 3.38nF | 11 ns | 11ns | 6 ns | 27 ns | 40A | 20V | 100V | 1.5V | 136W Tc | 25mOhm | N-Channel | 3380pF @ 25V | 25mOhm @ 40A, 10V | 2.5V @ 250μA | 40A Tc | 70nC @ 10V | 25 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG47N60E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihg47n60ee3-datasheets-8669.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 14 Weeks | 38.000013g | Unknown | 64mOhm | 3 | Tin | No | 1 | Single | 357W | 1 | TO-247AC | 9.62nF | 24 ns | 11ns | 13 ns | 94 ns | 47A | 20V | 600V | 2.5V | 357W Tc | 64mOhm | N-Channel | 9620pF @ 100V | 64mOhm @ 24A, 10V | 4V @ 250μA | 47A Tc | 220nC @ 10V | 64 mΩ | 10V | ±30V |
