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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB60R165CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r165cpatma1-datasheets-0099.pdf | 600V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 40 Weeks | 3 | no | No | Halogen Free | SINGLE | GULL WING | 4 | 192W | 1 | R-PSSO-G2 | 12 ns | 5ns | 5 ns | 50 ns | 21A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 192W Tc | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 21A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFB7530PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-irfb7530pbf-datasheets-0453.pdf | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | 6.000006g | No SVHC | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 52 ns | 141ns | 104 ns | 172 ns | 195A | 20V | SILICON | SWITCHING | 3.7V | 375W Tc | TO-220AB | 760A | 0.002Ohm | 1025 mJ | 60V | N-Channel | 13703pF @ 25V | 2m Ω @ 100A, 10V | 3.7V @ 250μA | 195A Tc | 411nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB160N75F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb160n75f3-datasheets-0330.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 3.7MOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB160N | 3 | Single | 30 | 330W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 65ns | 15 ns | 100 ns | 60A | 20V | 75V | SILICON | SWITCHING | 330W Tc | 480A | 75V | N-Channel | 6750pF @ 25V | 4 V | 4m Ω @ 60A, 10V | 4V @ 250μA | 120A Tc | 85nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FDB035AN06A0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdb035an06a0-datasheets-0338.pdf | 60V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 11.33mm | Lead Free | 2 | 8 Weeks | 1.31247g | No SVHC | 3.5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 310W | 1 | FET General Purpose Power | R-PSSO-G2 | 15 ns | 93ns | 13 ns | 38 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 22A | 625 mJ | 60V | N-Channel | 6400pF @ 25V | 3.5m Ω @ 80A, 10V | 4V @ 250μA | 22A Ta 80A Tc | 124nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IRF2907ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irf2907zpbf-datasheets-0354.pdf | 75V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | Single | 330W | 1 | FET General Purpose Power | 19 ns | 140ns | 100 ns | 97 ns | 75A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 680A | 690 mJ | 75V | N-Channel | 7500pF @ 25V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 160A Tc | 270nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| FQP47P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqp47p06-datasheets-0363.pdf | -60V | -47A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 8 Weeks | 1.8g | No SVHC | 26mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 160W | 1 | Other Transistors | 50 ns | 450ns | 195 ns | 100 ns | 47A | 25V | SILICON | SWITCHING | 60V | -4V | 160W Tc | TO-220AB | 820 mJ | -60V | P-Channel | 3600pF @ 25V | -4 V | 26m Ω @ 23.5A, 10V | 4V @ 250μA | 47A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| BBS3002-DL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 1999 | /files/onsemiconductor-bbs3002dl1e-datasheets-0350.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 10 Weeks | 2 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 2 | Single | NOT SPECIFIED | 95 ns | 1μs | 820 ns | 800 ns | 100A | 20V | 60V | 90W Tc | -60V | P-Channel | 13200pF @ 20V | 5.8m Ω @ 50A, 10V | 100A Ta | 280nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP80NF55-06 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf5506-datasheets-0377.pdf | 55V | 80A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 6.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP80N | 3 | Single | 300W | 1 | FET General Purpose Power | 27 ns | 155ns | 65 ns | 125 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | TO-220AB | 55V | N-Channel | 4400pF @ 25V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 189nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| EPC2015C | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2015c-datasheets-0127.pdf | Die | 12 Weeks | Die | 980pF | 53A | 40V | N-Channel | 1180pF @ 20V | 4mOhm @ 33A, 5V | 2.5V @ 9mA | 53A Ta | 8.7nC @ 5V | 4 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor Inc. | $2.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/alphaomegasemiconductor-aob25s65l-datasheets-2489.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 25A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 357W Tc | 104A | 0.19Ohm | 750 mJ | N-Channel | 1278pF @ 100V | 190m Ω @ 12.5A, 10V | 4V @ 250μA | 25A Tc | 26.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P08-11L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0811le3-datasheets-0300.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 11.1mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 13.6W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 330ns | 550 ns | 135 ns | -11A | 20V | SILICON | DRAIN | SWITCHING | 80V | -3V | 13.6W Ta 375W Tc | -80V | P-Channel | 10850pF @ 40V | -3 V | 11.2m Ω @ 20A, 10V | 3V @ 250μA | 110A Tc | 270nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FQPF47P06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqpf47p06-datasheets-0432.pdf | -60V | -30A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 9 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 62W | 1 | Other Transistors | Not Qualified | 50 ns | 450ns | 195 ns | 100 ns | 30A | 25V | SILICON | ISOLATED | SWITCHING | 60V | -4V | 62W Tc | 0.026Ohm | 820 mJ | -60V | P-Channel | 3600pF @ 25V | 26m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 110nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||
| STW28N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw28n65m2-datasheets-0439.pdf | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | 3 | 16 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STW28N | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 13.4 ns | 59 ns | 20A | 25V | SILICON | SWITCHING | 650V | 650V | 170W Tc | 80A | 0.18Ohm | 760 mJ | N-Channel | 1440pF @ 100V | 180m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPP600N25N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp600n25n3gxksa1-datasheets-0448.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 136W | 1 | Not Qualified | 10 ns | 8 ns | 22 ns | 25A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 136W Tc | TO-220AB | 0.06Ohm | N-Channel | 2350pF @ 100V | 60m Ω @ 25A, 10V | 4V @ 90μA | 25A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDMT80060DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Dual Cool™, PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmt80060dc-datasheets-0221.pdf | 8-PowerVDFN | 20 Weeks | 248.52072mg | 8 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | Single | NOT SPECIFIED | FET General Purpose Power | 75 ns | 47ns | 19 ns | 66 ns | 292A | 20V | 60V | 3.2W Ta 156W Tc | N-Channel | 20170pF @ 30V | 1.1m Ω @ 43A, 10V | 4.5V @ 250μA | 43A Ta 292A Tc | 238nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP80N10T | IXYS | $2.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/ixys-ixtp80n10t-datasheets-0277.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | yes | EAR99 | AVALANCHE RATED | NOT SPECIFIED | 3 | Single | NOT SPECIFIED | 230W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 54ns | 48 ns | 40 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 230W Tc | TO-220AB | 220A | 0.014Ohm | 400 mJ | 100V | N-Channel | 3040pF @ 25V | 14m Ω @ 25A, 10V | 5V @ 100μA | 80A Tc | 60nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFS3107TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3107trlpbf-datasheets-0289.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 110ns | 100 ns | 99 ns | 195A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 370W Tc | 900A | 75V | N-Channel | 9370pF @ 50V | 3m Ω @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SMP3003-TL-1E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-smp3003tl1e-datasheets-0326.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 11 Weeks | 1.946308g | 2 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | SINGLE | GULL WING | 2 | 1 | 90W | 1 | 95 ns | 1μs | 820 ns | 800 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 75V | 75V | 90W Tc | 400A | 468 mJ | P-Channel | 13400pF @ 20V | 8m Ω @ 50A, 10V | 100A Ta | 280nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SQM120N10-3M8_GE3 | Vishay Siliconix | $3.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqm120n103m8ge3-datasheets-9534.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | TO-263 (D2Pak) | 100V | 375W Tc | N-Channel | 7230pF @ 25V | 3.8mOhm @ 20A, 10V | 3.5V @ 250μA | 120A Tc | 190nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N100D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/ixys-ixty01n100d-datasheets-0137.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 24 Weeks | 110Ohm | 3 | yes | EAR99 | No | Pure Tin (Sn) | GULL WING | 4 | Single | 1.1W | 1 | FET General Purpose Power | R-PSSO-G2 | 6ns | 6 ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | TO-252AA | 0.4A | 1kV | N-Channel | 120pF @ 25V | 110 Ω @ 50mA, 0V | 100mA Tc | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R0-60PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn3r060ps127-datasheets-0139.pdf | TO-220-3 | 3 | 12 Weeks | 3 | Tin | No | e3 | NO | 3 | Single | 306W | 1 | 31 ns | 26ns | 22 ns | 77 ns | 100A | 20V | 60V | SILICON | DRAIN | SWITCHING | 306W Tc | TO-220AB | 824A | 800 mJ | 60V | N-Channel | 8079pF @ 30V | 3m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 130nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF5210PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irf5210pbf-datasheets-0159.pdf | -100V | -40A | TO-220-3 | 10.5156mm | 19.8mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 60mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | Tin | No | e3 | 250 | 1 | Single | 30 | 200W | 1 | Other Transistors | 175°C | 17 ns | 86ns | 81 ns | 79 ns | -40A | 20V | -100V | SILICON | DRAIN | SWITCHING | 100V | -4V | 200W Tc | TO-220AB | 260 ns | 780 mJ | -100V | P-Channel | 2700pF @ 25V | -4 V | 60m Ω @ 24A, 10V | 4V @ 250μA | 40A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| IRLS3036TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irls3036trl7pp-datasheets-9881.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 12 Weeks | 1.9MOhm | 7 | yes | EAR99 | LOGIC LEVEL COMPATIBLE | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 380W | 1 | R-PSSO-G6 | 540ns | 170 ns | 240A | SILICON | DRAIN | SWITCHING | 380W Tc | 1000A | 300 mJ | 60V | N-Channel | 11270pF @ 50V | 1.9m Ω @ 180A, 10V | 2.5V @ 250μA | 240A Tc | 160nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19532KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd19532kttt-datasheets-2424.pdf | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 4.44mm | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD19532 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 100V | 100V | 250W Tc | 400A | 0.0066Ohm | 18 pF | 259 mJ | N-Channel | 5060pF @ 50V | 5.6m Ω @ 90A, 10V | 3.2V @ 250μA | 200A Ta | 57nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STB75NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb75nf20-datasheets-0233.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 34mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB75N | 3 | Single | 30 | 190W | 1 | FET General Purpose Power | R-PSSO-G2 | 53 ns | 33ns | 29 ns | 75 ns | 37A | 20V | SILICON | SWITCHING | 3V | 190W Tc | 75A | 205 mJ | 200V | N-Channel | 3260pF @ 25V | 34m Ω @ 37A, 10V | 4V @ 250μA | 75A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRF7779L2TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf7779l2trpbf-datasheets-0244.pdf | DirectFET™ Isometric L8 | 9.144mm | 508μm | 7.1mm | Lead Free | 9 | 12 Weeks | No SVHC | 11 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 125W | 1 | FET General Purpose Power | R-XBCC-N9 | 16 ns | 19ns | 12 ns | 36 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.3W Ta 125W Tc | 67A | 270A | 270 mJ | 150V | N-Channel | 6660pF @ 25V | 11m Ω @ 40A, 10V | 5V @ 250μA | 375A Tc | 150nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFP064NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irfp064npbf-datasheets-0258.pdf | 55V | 110A | TO-247-3 | 15.875mm | 24.99mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 8MOhm | 3 | 5.45mm | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | 1 | Single | 150W | 1 | FET General Purpose Power | 175°C | 14 ns | 100ns | 70 ns | 43 ns | 110A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 200W Tc | TO-247AC | 170 ns | 98A | 480 mJ | 55V | N-Channel | 4000pF @ 25V | 4 V | 8m Ω @ 59A, 10V | 4V @ 250μA | 110A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| SUM45N25-58-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum45n2558e3-datasheets-0017.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 58mOhm | 3 | yes | EAR99 | e3 | Matte Tin (Sn) | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 22 ns | 220ns | 145 ns | 40 ns | 45A | 30V | SILICON | SWITCHING | 3.75W Ta 375W Tc | 90A | 250V | N-Channel | 5000pF @ 25V | 4 V | 58m Ω @ 20A, 10V | 4V @ 250μA | 45A Tc | 140nC @ 10V | 6V 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFS3004TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfs3004trl7pp-datasheets-0035.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 12 Weeks | No SVHC | 1.25MOhm | 7 | EAR99 | No | SINGLE | GULL WING | 380W | 1 | FET General Purpose Power | R-PSSO-G6 | 23 ns | 240ns | 160 ns | 91 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 380W Tc | 290 mJ | 40V | N-Channel | 9130pF @ 25V | 3.7 V | 1.25m Ω @ 195A, 10V | 4V @ 250μA | 240A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUM90N10-8M2P-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-sum90n108m2pe3-datasheets-9746.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.826mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 8.2mOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | 3 | 1 | Single | 40 | 300W | 1 | FET General Purpose Power | 175°C | R-PSSO-G2 | 23 ns | 17ns | 9 ns | 34 ns | 90A | 20V | SILICON | SWITCHING | 2.5V | 3.75W Ta 300W Tc | 240A | 100V | N-Channel | 6290pF @ 50V | 8.2m Ω @ 20A, 10V | 4.5V @ 250μA | 90A Tc | 150nC @ 10V | 10V | ±20V |
