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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPB107N20NAATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb107n20naatma1-datasheets-1382.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 300W | 1 | Not Qualified | R-PSSO-G2 | 18 ns | 26ns | 11 ns | 41 ns | 88A | 20V | 200V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 560 mJ | N-Channel | 7100pF @ 100V | 10.7m Ω @ 88A, 10V | 4V @ 270μA | 88A Tc | 87nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| EPC2034C | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2034c-datasheets-1439.pdf | Die | 10 Weeks | Die | 200V | N-Channel | 1140pF @ 100V | 8mOhm @ 20A, 5V | 2.5V @ 7mA | 48A Ta | 11nC @ 5V | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP20N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp20n60c3xksa1-datasheets-1552.pdf | 650V | 20.7A | TO-220-3 | 10mm | 9.25mm | 4.4mm | Lead Free | 8 Weeks | 45.359237g | No SVHC | 3 | Tin | Single | 208W | PG-TO220-3-1 | 2.4nF | 10 ns | 5ns | 4.5 ns | 67 ns | 20.7A | 20V | 650V | 600V | 3V | 208W Tc | 190mOhm | 600V | N-Channel | 2400pF @ 25V | 3 V | 190mOhm @ 13.1A, 10V | 3.9V @ 1mA | 20.7A Tc | 114nC @ 10V | 190 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD18536KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd18536kcs-datasheets-2854.pdf | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Contains Lead | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Copper, Tin | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | CSD18536 | 3 | Single | NOT SPECIFIED | 1 | 8 ns | 17ns | 12 ns | 23 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 375W Tc | 400A | 0.0022Ohm | 51 pF | 819 mJ | N-Channel | 11430pF @ 30V | 1.6m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta | 108nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STW12NK90Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw12nk90z-datasheets-1562.pdf | 900V | 11A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | No SVHC | 880mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | STW12N | 3 | Single | 230W | 1 | FET General Purpose Power | 31 ns | 20ns | 55 ns | 88 ns | 11A | 30V | SILICON | SWITCHING | 3.75V | 230W Tc | 44A | 500 mJ | 900V | N-Channel | 3500pF @ 25V | 880m Ω @ 5.5A, 10V | 4.5V @ 100μA | 11A Tc | 152nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| EPC2034 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2034-datasheets-1454.pdf | Die | 12 Weeks | Die | 200V | N-Channel | 950pF @ 100V | 10mOhm @ 20A, 5V | 2.5V @ 7mA | 48A Ta | 8.8nC @ 5V | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4310ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Bulk | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp4310zpbf-datasheets-1577.pdf&product=infineontechnologies-irfp4310zpbf-6380961 | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 6MOhm | 3 | EAR99 | No | Single | 280W | 1 | FET General Purpose Power | 20 ns | 60ns | 57 ns | 55 ns | 134A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 280W Tc | TO-247AC | 40 ns | 560A | 100V | N-Channel | 6860pF @ 50V | 4 V | 6m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| AUIRFSA8409-7P | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/infineontechnologies-auirfsa84097p-datasheets-1587.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 6 | 15 Weeks | EAR99 | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G6 | 523A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 375W Tc | 360A | 1440A | 0.00069Ohm | 1450 mJ | N-Channel | 13975pF @ 25V | 0.69m Ω @ 100A, 10V | 3.9V @ 250μA | 523A Tc | 460nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTP26P20P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarP™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixtp26p20p-datasheets-1592.pdf | TO-220-3 | Lead Free | 3 | 24 Weeks | 170MOhm | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 3 | Single | 300W | 1 | Other Transistors | R-PSFM-T3 | 33ns | 21 ns | 46 ns | 26A | 20V | SILICON | DRAIN | SWITCHING | 200V | 300W Tc | TO-220AB | 70A | -200V | P-Channel | 2740pF @ 25V | 170m Ω @ 13A, 10V | 4V @ 250μA | 26A Tc | 56nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| EPC2031 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2031-datasheets-1314.pdf | Die | 12 Weeks | Die | 60V | N-Channel | 1800pF @ 300V | 2.6mOhm @ 30A, 5V | 2.5V @ 15mA | 31A Ta | 17nC @ 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHG20N50C-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sihg20n50ce3-datasheets-1322.pdf | TO-247-3 | 3 | 38.000013g | Unknown | 3 | yes | No | SINGLE | 260 | 3 | 1 | 40 | 292W | 1 | FET General Purpose Power | 80 ns | 27ns | 44 ns | 32 ns | 20A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5V | 250W Tc | TO-247AC | 80A | 0.27Ohm | 500V | N-Channel | 2942pF @ 25V | 5 V | 270m Ω @ 10A, 10V | 5V @ 250μA | 20A Tc | 76nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IAUT300N10S5N015ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™-5 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/infineontechnologies-iaut300n10s5n015atma1-datasheets-1340.pdf | 8-PowerSFN | 2.4mm | 2 | 20 Weeks | EAR99 | PG-HSOF-8 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | FLAT | NOT SPECIFIED | 1 | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-F2 | 29 ns | 70 ns | 300A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 652 mJ | 100V | N-Channel | 16011pF @ 50V | 1.5m Ω @ 100A, 10V | 3.8V @ 275μA | 300A Tc | 216nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/infineontechnologies-irfp4710pbf-datasheets-1344.pdf | 100V | 72A | TO-247-3 | 15.875mm | 20.2946mm | 5.3mm | Lead Free | 3 | 12 Weeks | No SVHC | 14Ohm | 3 | EAR99 | No | Single | 190W | 1 | FET General Purpose Power | 35 ns | 130ns | 38 ns | 41 ns | 72A | 20V | 100V | SILICON | DRAIN | SWITCHING | 5.5V | 190W Tc | TO-247AC | 110 ns | 100V | N-Channel | 6160pF @ 25V | 5.5 V | 14m Ω @ 45A, 10V | 5.5V @ 250μA | 72A Tc | 170nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW3N170 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-247-3 | Lead Free | 12 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NO | NOT SPECIFIED | STW3N | NOT SPECIFIED | FET General Purpose Powers | Single | 1700V | 160mW | 2.3A | N-Channel | 1100pF @ 100V | 13 Ω @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 44nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STFW3N150 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw3n150-datasheets-1364.pdf | ISOWATT218FX | 15.7mm | 26.7mm | 5.7mm | Lead Free | 3 | 8 Weeks | No SVHC | 9Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STFW | 3 | Single | 63W | 1 | FET General Purpose Power | 24 ns | 47ns | 61 ns | 45 ns | 2.5A | 30V | SILICON | ISOLATED | SWITCHING | 1500V | 4V | 63W Tc | 450 mJ | 1.5kV | N-Channel | 939pF @ 25V | 9 Ω @ 1.3A, 10V | 5V @ 250μA | 2.5A Tc | 29.3nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| EPC2032 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2032-datasheets-1370.pdf | Die | 12 Weeks | Die | 1.53nF | 48A | 100V | N-Channel | 1530pF @ 50V | 4mOhm @ 30A, 5V | 2.5V @ 11mA | 48A Ta | 15nC @ 5V | 4 mΩ | 5V | +6V, -4V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SPP17N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | https://pdf.utmel.com/r/datasheets/infineontechnologies-spp17n80c3xksa1-datasheets-1378.pdf | TO-220-3 | 3 | 18 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800V | 800V | 208W Tc | TO-220AB | 17A | 51A | 0.29Ohm | 670 mJ | N-Channel | 2320pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SPA17N80C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-spp17n80c3xksa1-datasheets-1378.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | yes | AVALANCHE RATED | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 800V | 800V | 42W Tc | TO-220AB | 17A | 51A | 0.29Ohm | 670 mJ | N-Channel | 2320pF @ 25V | 290m Ω @ 11A, 10V | 3.9V @ 1mA | 17A Tc | 177nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2022 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/epc-epc2022-datasheets-1407.pdf | Die | 12 Weeks | Die | 1.5nF | 60A | 100V | N-Channel | 1500pF @ 50V | 3.2mOhm @ 25A, 5V | 2.5V @ 12mA | 60A Ta | 3.2 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDH3632 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdh3632-datasheets-1444.pdf | 100V | 80A | TO-247-3 | 6.35mm | 6.35mm | 6.35mm | Lead Free | 3 | 10 Weeks | 6.39g | No SVHC | 9MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 310W | 1 | FET General Purpose Power | Not Qualified | 30 ns | 39ns | 46 ns | 96 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | 100V | N-Channel | 6000pF @ 25V | 4 V | 9m Ω @ 80A, 10V | 4V @ 250μA | 12A Ta 80A Tc | 110nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| STP45N60DM2AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp45n60dm2ag-datasheets-1463.pdf | TO-220-3 | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP45N | NOT SPECIFIED | 34A | 600V | 250W Tc | N-Channel | 2500pF @ 100V | 93m Ω @ 17A, 10V | 5V @ 250μA | 34A Tc | 56nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP2907PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfp2907pbf-datasheets-1466.pdf | 75V | 209A | TO-247-3 | 15.87mm | 24.99mm | 5.3086mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | 1 | Single | 470W | 1 | 175°C | 23 ns | 190ns | 130 ns | 130 ns | 209A | 20V | 75V | SILICON | DRAIN | SWITCHING | 4V | 470W Tc | TO-247AC | 210 ns | 90A | 840A | 75V | N-Channel | 13000pF @ 25V | 4 V | 4.5m Ω @ 125A, 10V | 4V @ 250μA | 209A Tc | 620nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||
| CSD19536KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 2 | 6 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | GULL WING | 260 | CSD19536 | 1 | Single | NOT SPECIFIED | 375W | 1 | 175°C | 13 ns | 8ns | 6 ns | 32 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 375W Tc | 400A | 0.0028Ohm | 806 mJ | 100V | N-Channel | 12000pF @ 50V | 2.4m Ω @ 100A, 10V | 3.2V @ 250μA | 200A Ta | 153nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDH055N15A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdh055n15a-datasheets-1488.pdf | TO-247-3 | 20.82mm | 4.82mm | 15.87mm | Lead Free | 3 | 9 Weeks | 6.39g | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | Single | 429W | 1 | FET General Purpose Power | 35 ns | 67ns | 21 ns | 71 ns | 167A | 20V | SILICON | SWITCHING | 429W Tc | TO-247AB | 668A | 0.0059Ohm | 150V | N-Channel | 9445pF @ 75V | 5.9m Ω @ 120A, 10V | 4V @ 250μA | 158A Tc | 92nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| EPC2029 | EPC | $7.84 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | /files/epc-epc2029-datasheets-1300.pdf | Die | 12 Weeks | Die | 1.41nF | 48A | 80V | N-Channel | 1410pF @ 40V | 3.2mOhm @ 30A, 5V | 2.5V @ 12mA | 48A Ta | 13nC @ 5V | 3.2 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SCT2H12NYTB | ROHM Semiconductor | $13.11 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SiCFET (Silicon Carbide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-sct2h12nytb-datasheets-1159.pdf | TO-268-3, D3Pak (2 Leads + Tab), TO-268AA | 2 | 19 Weeks | EAR99 | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 1700V | 1700V | 44W Tc | 4A | 10A | N-Channel | 184pF @ 800V | 1.5 Ω @ 1.1A, 18V | 4V @ 410μA | 4A Tc | 14nC @ 18V | 18V | +22V, -6V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLB4030PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlb4030pbf-datasheets-1179.pdf | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.3MOhm | 3 | EAR99 | No | Single | 370W | 1 | FET General Purpose Power | 74 ns | 330ns | 170 ns | 110 ns | 180A | 16V | 100V | SILICON | SWITCHING | 2.5V | 370W Tc | TO-220AB | 100V | N-Channel | 11360pF @ 50V | 2.5 V | 4.3m Ω @ 110A, 10V | 2.5V @ 250μA | 180A Tc | 130nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| FQA36P15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa36p15-datasheets-1186.pdf&product=onsemiconductor-fqa36p15-6380904 | -150V | -36A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 90mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 294W | 1 | Other Transistors | Not Qualified | 50 ns | 350ns | 150 ns | 155 ns | -36A | 30V | SILICON | SWITCHING | 150V | -4V | 294W Tc | -150V | P-Channel | 3320pF @ 25V | 90m Ω @ 18A, 10V | 4V @ 250μA | 36A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP13NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf13nm60n-datasheets-1075.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 360mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STP13N | 3 | Single | 90W | 1 | FET General Purpose Power | 3 ns | 8ns | 10 ns | 30 ns | 5.5A | 25V | SILICON | SWITCHING | 3V | 90W Tc | TO-220AB | 44A | 200 mJ | 600V | N-Channel | 790pF @ 50V | 3 V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STP12NM50FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp12nm50fp-datasheets-1207.pdf | 500V | 12A | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | 16 Weeks | 350mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP12 | 3 | 1 | Single | 35W | 1 | FET General Purpose Power | 150°C | 20 ns | 10ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 35W Tc | TO-220AB | 48A | 400 mJ | 500V | N-Channel | 1000pF @ 25V | 350m Ω @ 6A, 10V | 5V @ 50μA | 12A Tc | 39nC @ 10V | 10V | ±30V |
