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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQA36P15 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqa36p15-datasheets-1186.pdf&product=onsemiconductor-fqa36p15-6380904 | -150V | -36A | TO-3P-3, SC-65-3 | 15.8mm | 18.9mm | 5mm | Lead Free | 3 | 4 Weeks | 6.401g | No SVHC | 90mOhm | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | FAST SWITCHING | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 294W | 1 | Other Transistors | Not Qualified | 50 ns | 350ns | 150 ns | 155 ns | -36A | 30V | SILICON | SWITCHING | 150V | -4V | 294W Tc | -150V | P-Channel | 3320pF @ 25V | 90m Ω @ 18A, 10V | 4V @ 250μA | 36A Tc | 105nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STP13NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf13nm60n-datasheets-1075.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 360mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | STP13N | 3 | Single | 90W | 1 | FET General Purpose Power | 3 ns | 8ns | 10 ns | 30 ns | 5.5A | 25V | SILICON | SWITCHING | 3V | 90W Tc | TO-220AB | 44A | 200 mJ | 600V | N-Channel | 790pF @ 50V | 3 V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||
| STP12NM50FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp12nm50fp-datasheets-1207.pdf | 500V | 12A | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | 16 Weeks | 350mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | AVALANCHE RATED | No | e3 | Matte Tin (Sn) - annealed | STP12 | 3 | 1 | Single | 35W | 1 | FET General Purpose Power | 150°C | 20 ns | 10ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 35W Tc | TO-220AB | 48A | 400 mJ | 500V | N-Channel | 1000pF @ 25V | 350m Ω @ 6A, 10V | 5V @ 50μA | 12A Tc | 39nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| EPC2010C | EPC | $20.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -40°C | GaNFET (Gallium Nitride) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/epc-epc2010c-datasheets-1209.pdf | Die | 12 Weeks | Die Outline (7-Solder Bar) | 540pF | 22A | 200V | N-Channel | 540pF @ 100V | 25mOhm @ 12A, 5V | 2.5V @ 3mA | 22A Ta | 5.3nC @ 5V | 25 mΩ | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP4321PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-irfp4321pbf-datasheets-1239.pdf | 150V | 78A | TO-247-3 | 15.875mm | 20.3mm | 5.3mm | Lead Free | 12 Weeks | No SVHC | 15.5MOhm | 3 | No | Single | 310mW | TO-247AC | 4.46nF | 18 ns | 60ns | 35 ns | 25 ns | 78A | 30V | 150V | 150V | 5V | 310W Tc | 130 ns | 15.5mOhm | 150V | N-Channel | 4460pF @ 25V | 5 V | 15.5mOhm @ 33A, 10V | 5V @ 250μA | 78A Tc | 110nC @ 10V | 15.5 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IRFB4332PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4332pbf-datasheets-1262.pdf | 250V | 60A | TO-220-3 | 10.66mm | 19.8mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 33MOhm | 3 | EAR99 | No | 1 | Single | 390W | 1 | FET General Purpose Power | 175°C | 60A | 30V | 250V | SILICON | DRAIN | SWITCHING | 5V | 390W Tc | TO-220AB | 290 ns | 250V | N-Channel | 5860pF @ 25V | 5 V | 33m Ω @ 35A, 10V | 5V @ 250μA | 60A Tc | 150nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STP33N60DM2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ DM2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp33n60dm2-datasheets-1270.pdf | TO-220-3 | 3 | 17 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STP33N | NOT SPECIFIED | 1 | 24A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 4V | 190W Tc | TO-220AB | 96A | 570 mJ | N-Channel | 1870pF @ 100V | 130m Ω @ 12A, 10V | 5V @ 250μA | 24A Tc | 43nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF13NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf13nm60n-datasheets-1075.pdf | TO-220-3 Full Pack | 10.4mm | 20mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 280mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | TO-220FP-7012510 | e3 | Matte Tin (Sn) - annealed | STF13 | 3 | 1 | Single | 25W | 1 | FET General Purpose Power | 150°C | 3 ns | 8ns | 10 ns | 30 ns | 5.5A | 25V | SILICON | ISOLATED | SWITCHING | 25W Tc | TO-220AB | 44A | 200 mJ | 600V | N-Channel | 790pF @ 50V | 3 V | 360m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| PSMN1R5-40PS,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-psmn1r540ps127-datasheets-1079.pdf | TO-220-3 | Lead Free | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 338W | 1 | 45.2 ns | 66ns | 53 ns | 111 ns | 120A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 338W Tc | TO-220AB | 40V | N-Channel | 9710pF @ 20V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 136nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N15N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb065n15n3gatma1-datasheets-1086.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | 25 ns | 35ns | 14 ns | 46 ns | 130A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 520A | 0.0065Ohm | N-Channel | 7300pF @ 75V | 6.5m Ω @ 100A, 10V | 4V @ 270μA | 130A Tc | 93nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IPB017N10N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-ipb017n10n5atma1-datasheets-0893.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 4.5mm | Contains Lead | 6 | 13 Weeks | 1.59999g | 7 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G6 | 33 ns | 23ns | 27 ns | 80 ns | 273A | 20V | 100V | SILICON | DRAIN | SWITCHING | 375W Tc | 100V | N-Channel | 15600pF @ 50V | 1.7m Ω @ 100A, 10V | 3.8V @ 279μA | 180A Tc | 210nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFP4110PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfp4110pbf-datasheets-1126.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 370W | 1 | FET General Purpose Power | 25 ns | 67ns | 88 ns | 78 ns | 180A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 370W Tc | TO-247AC | 75 ns | 670A | 100V | N-Channel | 9620pF @ 50V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| EPC2206 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2206-datasheets-1145.pdf | Die | 14 Weeks | Die | 80V | N-Channel | 1940pF @ 40V | 2.2mOhm @ 29A, 5V | 2.5V @ 13mA | 90A Ta | 19nC @ 5V | 5V | +6V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP10NK80Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp10nk80z-datasheets-1153.pdf | 800V | 9A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 900mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP10 | 3 | Single | 160W | 1 | FET General Purpose Power | 30 ns | 20ns | 17 ns | 65 ns | 9A | 30V | SILICON | SWITCHING | 3.75V | 190W Tc | TO-220AB | 9A | 290 mJ | 800V | N-Channel | 2180pF @ 25V | 900m Ω @ 4.5A, 10V | 4.5V @ 100μA | 9A Tc | 72nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRF1404LPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf1404lpbf-datasheets-0994.pdf | 40V | 162A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.652mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | 1 | Single | 30 | 200W | 1 | FET General Purpose Power | 17 ns | 140ns | 26 ns | 72 ns | 162A | 20V | SILICON | DRAIN | SWITCHING | 4V | 3.8W Ta 200W Tc | 75A | 650A | 40V | N-Channel | 7360pF @ 25V | 4 V | 4m Ω @ 95A, 10V | 4V @ 250μA | 162A Tc | 200nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IPB036N12N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb036n12n3gatma1-datasheets-1004.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | 4.5mm | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 300W | 1 | Not Qualified | 175°C | R-PSSO-G6 | 35 ns | 52ns | 21 ns | 76 ns | 180A | 20V | 120V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3V | 300W Tc | 0.0036Ohm | 900 mJ | 120V | N-Channel | 13800pF @ 60V | 3.6m Ω @ 100A, 10V | 4V @ 270μA | 180A Tc | 211nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| STP11NM60ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp11nm60nd-datasheets-1010.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 16 Weeks | No SVHC | 450mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | STP11N | 3 | Single | 90W | 1 | FET General Purpose Power | 16 ns | 7ns | 9 ns | 50 ns | 10A | 25V | SILICON | SWITCHING | 4V | 90W Tc | TO-220AB | 40A | 200 mJ | 600V | N-Channel | 850pF @ 50V | 450m Ω @ 5A, 10V | 5V @ 250μA | 10A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||
| IRFI4110GPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfi4110gpbf-datasheets-1020.pdf | TO-220-3 Full Pack | 10.75mm | 16.13mm | 4.83mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.5MOhm | 3 | EAR99 | No | Single | 61W | 1 | FET General Purpose Power | 24 ns | 58ns | 71 ns | 81 ns | 72A | 20V | SILICON | ISOLATED | SWITCHING | 4V | 61W Tc | TO-220AB | 290A | 100V | N-Channel | 9540pF @ 50V | 4 V | 4.5m Ω @ 43A, 10V | 4V @ 250μA | 72A Tc | 290nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB200N25N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb200n25n3gatma1-datasheets-1031.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 300W | 1 | R-PSSO-G2 | 18 ns | 20ns | 12 ns | 45 ns | 64A | 20V | 250V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 256A | 0.02Ohm | N-Channel | 7100pF @ 100V | 20m Ω @ 64A, 10V | 4V @ 270μA | 64A Tc | 86nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB64N25S320ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-ipb64n25s320atma1-datasheets-1037.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 14 Weeks | 3 | Halogen Free | PG-TO263-3-2 | 7nF | 18 ns | 20ns | 12 ns | 45 ns | 64A | 20V | 250V | 250V | 300W Tc | 17.5mOhm | N-Channel | 7000pF @ 25V | 20mOhm @ 64A, 10V | 4V @ 270μA | 64A Tc | 89nC @ 10V | 20 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP075N15A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp075n15af102-datasheets-1061.pdf | TO-220-3 | 10.36mm | 19.85mm | 4.672mm | Lead Free | 3 | 16 Weeks | 1.8g | 6.25MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | ULTRA-LOW RESISTANCE | Tin | No | 1 | Single | 333W | 1 | FET General Purpose Power | 175°C | 28 ns | 37ns | 21 ns | 62 ns | 130A | 20V | SILICON | SWITCHING | 333W Tc | TO-220AB | 522A | 588 mJ | 150V | N-Channel | 7350pF @ 75V | 7.5m Ω @ 100A, 10V | 4V @ 250μA | 130A Tc | 100nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SUP53P06-20-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sup53p0620e3-datasheets-0883.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 3 | 14 Weeks | 6.000006g | No SVHC | 19.5MOhm | 3 | EAR99 | No | 3 | 1 | Single | 3.1W | Other Transistors | 10 ns | 7ns | 40 ns | 70 ns | 9.2A | 20V | 60V | -1V | 3.1W Ta 104.2W Tc | TO-220AB | -60V | P-Channel | 3500pF @ 25V | 19.5m Ω @ 30A, 10V | 3V @ 250μA | 9.2A Ta 53A Tc | 115nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SPP80P06PHXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spp80p06phxksa1-datasheets-0888.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 340W | 1 | 24 ns | 18ns | 30 ns | 56 ns | 80A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 340W Tc | TO-220AB | P-Channel | 5033pF @ 25V | 23m Ω @ 64A, 10V | 4V @ 5.5mA | 80A Tc | 173nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| FDP2532 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp2532-datasheets-0900.pdf | 150V | 79A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 16MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | 16 ns | 30ns | 17 ns | 39 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 105 ns | 8A | 400 mJ | 150V | N-Channel | 5870pF @ 25V | 16m Ω @ 33A, 10V | 4V @ 250μA | 8A Ta 79A Tc | 107nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA130N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta130n10t-datasheets-0932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 9.1MOhm | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18536KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD18536 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 60V | 60V | 375W Tc | 400A | 0.0022Ohm | 51 pF | 819 mJ | N-Channel | 11430pF @ 30V | 1.6m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD19535KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.44mm | AVALANCHE RATED | Tin | not_compliant | e3 | GULL WING | CSD19535 | Single | 1 | 9 ns | 18ns | 15 ns | 21 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 400A | 0.0041Ohm | 451 mJ | N-Channel | 7930pF @ 50V | 3.4m Ω @ 100A, 10V | 3.4V @ 250μA | 200A Ta | 98nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB010N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb010n06natma1-datasheets-0909.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 13 Weeks | No SVHC | 7 | Halogen Free | 300W | 1 | PG-TO263-7 | 37 ns | 36ns | 23 ns | 74 ns | 180A | 20V | 60V | 60V | 300W Tc | 800μOhm | 60V | N-Channel | 15000pF @ 30V | 1mOhm @ 100A, 10V | 4V @ 280μA | 45A Ta 180A Tc | 208nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTA06N120P | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PolarVHV™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/ixys-ixta06n120p-datasheets-0969.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 17 Weeks | yes | EAR99 | AVALANCHE RATED | unknown | e3 | Matte Tin (Sn) | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 42W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 24ns | 27 ns | 50 ns | 600mA | 20V | SILICON | DRAIN | SWITCHING | 1200V | 42W Tc | 0.6A | 1.2A | 34Ohm | 50 mJ | 1.2kV | N-Channel | 270pF @ 25V | 32 Ω @ 300mA, 10V | 4.5V @ 50μA | 600mA Tc | 13.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFB4710PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irfb4710pbf-datasheets-0978.pdf | 100V | 75A | TO-220-3 | 8.77mm | Lead Free | 3 | 12 Weeks | No SVHC | 14mOhm | 3 | EAR99 | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 200W | 1 | FET General Purpose Power | 35 ns | 130ns | 38 ns | 41 ns | 75A | 20V | 100V | SILICON | DRAIN | SWITCHING | 5.5V | 3.8W Ta 200W Tc | TO-220AB | 110 ns | 100V | N-Channel | 6160pF @ 25V | 5.5 V | 14m Ω @ 45A, 10V | 5.5V @ 250μA | 75A Tc | 170nC @ 10V | 10V | ±20V |
