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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FDP2532 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdp2532-datasheets-0900.pdf | 150V | 79A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 16MOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 310W | 1 | FET General Purpose Power | 16 ns | 30ns | 17 ns | 39 ns | 79A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 105 ns | 8A | 400 mJ | 150V | N-Channel | 5870pF @ 25V | 16m Ω @ 33A, 10V | 4V @ 250μA | 8A Ta 79A Tc | 107nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| IXTA130N10T | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMV™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/ixys-ixta130n10t-datasheets-0932.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 9.1MOhm | yes | EAR99 | AVALANCHE RATED, ULTRA-LOW RESISTANCE | unknown | e3 | PURE TIN | GULL WING | NOT SPECIFIED | 4 | Single | NOT SPECIFIED | 360W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 47ns | 28 ns | 44 ns | 130A | SILICON | DRAIN | SWITCHING | 360W Tc | 350A | 500 mJ | 100V | N-Channel | 5080pF @ 25V | 9.1m Ω @ 25A, 10V | 4.5V @ 250μA | 130A Tc | 104nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| CSD18536KTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.44mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | GULL WING | 260 | CSD18536 | Single | NOT SPECIFIED | 1 | 200A | SILICON | DRAIN | SWITCHING | 60V | 60V | 375W Tc | 400A | 0.0022Ohm | 51 pF | 819 mJ | N-Channel | 11430pF @ 30V | 1.6m Ω @ 100A, 10V | 2.2V @ 250μA | 200A Ta | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| CSD19535KTTT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 2 (1 Year) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-4, D2Pak (3 Leads + Tab), TO-263AA | 10.18mm | 4.83mm | 8.41mm | Contains Lead | 2 | 12 Weeks | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.44mm | AVALANCHE RATED | Tin | not_compliant | e3 | GULL WING | CSD19535 | Single | 1 | 9 ns | 18ns | 15 ns | 21 ns | 200A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | 300W Tc | 400A | 0.0041Ohm | 451 mJ | N-Channel | 7930pF @ 50V | 3.4m Ω @ 100A, 10V | 3.4V @ 250μA | 200A Ta | 98nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB010N06NATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipb010n06natma1-datasheets-0909.pdf | TO-263-7, D2Pak (6 Leads + Tab) | Contains Lead | 13 Weeks | No SVHC | 7 | Halogen Free | 300W | 1 | PG-TO263-7 | 37 ns | 36ns | 23 ns | 74 ns | 180A | 20V | 60V | 60V | 300W Tc | 800μOhm | 60V | N-Channel | 15000pF @ 30V | 1mOhm @ 100A, 10V | 4V @ 280μA | 45A Ta 180A Tc | 208nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0200N100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl0200n100-datasheets-0741.pdf | 8-PowerSFN | 20 Weeks | 850.0521mg | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 100V | 429W Tc | N-Channel | 9760pF @ 50V | 2m Ω @ 80A, 10V | 4.5V @ 250μA | 300A Tc | 133nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDBL0240N100 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl0240n100-datasheets-0080.pdf | 8-PowerSFN | 8 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | Single | NOT SPECIFIED | 210A | 100V | 3.5W Ta 300W Tc | N-Channel | 8755pF @ 50V | 2.8m Ω @ 80A, 10V | 4V @ 250μA | 210A Tc | 111nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB015N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb015n08n5atma1-datasheets-0808.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 4.5mm | Contains Lead | 6 | 13 Weeks | 1.59999g | 7 | yes | EAR99 | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 375W | 1 | 175°C | R-PSSO-G6 | 33 ns | 32ns | 28 ns | 83 ns | 180A | 20V | 80V | SILICON | DRAIN | SWITCHING | 375W Tc | 80V | N-Channel | 16900pF @ 40V | 1.5m Ω @ 100A, 10V | 3.8V @ 279μA | 180A Tc | 222nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFB4110PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb4110pbf-datasheets-0826.pdf | 100V | 180A | TO-220-3 | 10.66mm | 16.51mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | EAR99 | Tin | No | Single | 370W | 1 | FET General Purpose Power | 25 ns | 67ns | 88 ns | 78 ns | 180A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 370W Tc | TO-220AB | 75 ns | 670A | 0.0045Ohm | 100V | N-Channel | 9620pF @ 50V | 4 V | 4.5m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 210nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM110N10-09-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sum110n1009e3-datasheets-9656.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | Unknown | 9.5MOhm | 3 | yes | EAR99 | No | e3 | MATTE TIN OVER NICKEL | GULL WING | 260 | 4 | 1 | Single | 30 | 3.75W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 125ns | 130 ns | 55 ns | 110A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 3.75W Ta 375W Tc | 70 ns | 440A | 100V | N-Channel | 6700pF @ 25V | 4 V | 9.5m Ω @ 30A, 10V | 4V @ 250μA | 110A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFB4310PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb4310pbf-datasheets-0629.pdf | 100V | 140A | TO-220-3 | 10.6426mm | 9.02mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 7MOhm | 3 | EAR99 | Tin | No | e3 | 250 | Single | 30 | 300W | 1 | FET General Purpose Power | 26 ns | 110ns | 78 ns | 68 ns | 130A | 20V | 100V | SILICON | DRAIN | SWITCHING | 4V | 300W Tc | TO-220AB | 68 ns | 75A | 550A | 980 mJ | 100V | N-Channel | 7670pF @ 50V | 4 V | 7m Ω @ 75A, 10V | 4V @ 250μA | 130A Tc | 250nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SPP11N60C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/infineontechnologies-spp11n60c3xksa1-datasheets-0639.pdf | 650V | 11A | TO-220-3 | Lead Free | 8 Weeks | No SVHC | 3 | No | Halogen Free | 125W | 1 | PG-TO220-3-1 | 1.2nF | 10 ns | 5ns | 5 ns | 44 ns | 11A | 20V | 600V | 650V | 125W Tc | 380mOhm | 600V | N-Channel | 1200pF @ 25V | 380mOhm @ 7A, 10V | 3.9V @ 500μA | 11A Tc | 60nC @ 10V | 380 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPB027N10N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb027n10n3gatma1-datasheets-0558.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3 | no | EAR99 | No | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | 4 | 300W | 1 | R-PSSO-G2 | 34 ns | 58ns | 28 ns | 84 ns | 120A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 300W Tc | 480A | 0.0027Ohm | N-Channel | 14800pF @ 50V | 2.7m Ω @ 100A, 10V | 3.5V @ 275μA | 120A Tc | 206nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFB3006PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfb3006pbf-datasheets-0704.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 4 | EAR99 | No | Single | 375W | 1 | FET General Purpose Power | R-PSFM-T3 | 16 ns | 182ns | 189 ns | 118 ns | 270A | 20V | SILICON | DRAIN | SWITCHING | 3V | 375W Tc | TO-220AB | 0.0025Ohm | 320 mJ | 60V | N-Channel | 8970pF @ 50V | 2.5m Ω @ 170A, 10V | 4V @ 250μA | 195A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPB019N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb019n08n3gatma1-datasheets-0723.pdf | TO-263-7, D2Pak (6 Leads + Tab) | 4.5mm | Contains Lead | 6 | 13 Weeks | 7 | no | EAR99 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 7 | 1 | NOT SPECIFIED | 300W | 1 | Not Qualified | 175°C | R-PSSO-G6 | 28 ns | 73ns | 33 ns | 86 ns | 180A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.8V | 300W Tc | 80V | N-Channel | 14200pF @ 40V | 1.9m Ω @ 100A, 10V | 3.5V @ 270μA | 180A Tc | 206nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| STW20NK50Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw20nk50z-datasheets-0746.pdf | 500V | 17A | TO-247-3 | 15.75mm | 20.15mm | 5.15mm | Lead Free | 3 | 12 Weeks | 9.071847g | No SVHC | 270mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STW20N | 3 | Single | 190W | 1 | FET General Purpose Power | 28 ns | 20ns | 15 ns | 70 ns | 17A | 30V | SILICON | SWITCHING | 3.75V | 190W Tc | TO-247AC | 68A | 850 mJ | 500V | N-Channel | 2600pF @ 25V | 270m Ω @ 8.5A, 10V | 4.5V @ 100μA | 17A Tc | 119nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| IRFB4227PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfb4227pbf-datasheets-0766.pdf | TO-220-3 | 10.6426mm | 19.8mm | 4.82mm | Lead Free | 3 | 12 Weeks | No SVHC | 24MOhm | 3 | EAR99 | No | 1 | Single | 330W | 1 | FET General Purpose Power | 175°C | 33 ns | 20ns | 31 ns | 21 ns | 65A | 30V | 200V | SILICON | DRAIN | SWITCHING | 5V | 330W Tc | TO-220AB | 150 ns | 260A | 200V | N-Channel | 4600pF @ 25V | 5 V | 24m Ω @ 46A, 10V | 5V @ 250μA | 65A Tc | 98nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IPLU300N04S4R8XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-iplu300n04s4r8xtma1-datasheets-0656.pdf | 8-PowerSFN | 2.4mm | Lead Free | 2 | 20 Weeks | 8 | EAR99 | PG-HSOF-8 | e3 | Tin (Sn) | Halogen Free | SINGLE | FLAT | 1 | 429W | 1 | FET General Purpose Power | 175°C | R-MBCC-F2 | 50 ns | 22ns | 61 ns | 68 ns | 300A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 2V | 429W Tc | 35A | 400A | 0.00077Ohm | 300 pF | 290 mJ | 40V | N-Channel | 22945pF @ 25V | 0.77m Ω @ 100A, 10V | 4V @ 230μA | 300A Tc | 287nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDBL86361-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdbl86361f085-datasheets-9756.pdf | 8-PowerSFN | 2.4mm | 6 Weeks | 850.0521mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 245 | 1 | Single | NOT SPECIFIED | 429W | 175°C | 42 ns | 87 ns | 300A | 20V | 429W Tj | 80V | N-Channel | 12800pF @ 25V | 1.4m Ω @ 80A, 10V | 4V @ 250μA | 300A Tc | 188nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS3006TRL7PP | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3006trl7pp-datasheets-0537.pdf | TO-263-7, D2Pak (6 Leads + Tab), TO-263CB | Lead Free | 6 | 12 Weeks | 2.1MOhm | 7 | yes | EAR99 | No | SINGLE | GULL WING | 375W | 1 | R-PSSO-G6 | 14 ns | 61ns | 69 ns | 118 ns | 240A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 375W Tc | 303 mJ | 60V | N-Channel | 8850pF @ 50V | 2.1m Ω @ 168A, 10V | 4V @ 250μA | 240A Tc | 300nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP3306PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfp3306pbf-datasheets-0547.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | Lead Free | 3 | 12 Weeks | No SVHC | 4.2MOhm | 3 | EAR99 | No | Single | 220W | 1 | FET General Purpose Power | 15 ns | 76ns | 77 ns | 40 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 4V | 220W Tc | TO-247AC | 31 ns | 620A | 60V | N-Channel | 4520pF @ 50V | 4.2m Ω @ 75A, 10V | 4V @ 150μA | 120A Tc | 120nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRFI4227PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irfi4227pbf-datasheets-0564.pdf | TO-220-3 Full Pack | 10.6172mm | 9.8044mm | 4.826mm | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 46W | 1 | FET General Purpose Power | 17 ns | 19ns | 29 ns | 11 ns | 26A | 30V | SILICON | DRAIN | SWITCHING | 5V | 46W Tc | TO-220AB | 100A | 0.025Ohm | 54 mJ | 200V | N-Channel | 4600pF @ 25V | 25m Ω @ 17A, 10V | 5V @ 250μA | 26A Tc | 110nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| FDB035N10A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdb035n10a-datasheets-0584.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 2 | 8 Weeks | 1.31247g | 3.5MOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Tin (Sn) | GULL WING | Single | 333W | 1 | FET General Purpose Power | R-PSSO-G2 | 22 ns | 54ns | 11 ns | 37 ns | 214A | 20V | SILICON | DRAIN | SWITCHING | 333W Tc | 704A | 558 mJ | 100V | N-Channel | 7295pF @ 25V | 3.5m Ω @ 75A, 10V | 4V @ 250μA | 120A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AUIRFS3107TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-auirfs3107trl-datasheets-0599.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 2 | 16 Weeks | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | Tin | No | e3 | GULL WING | 260 | Single | 30 | 370W | 1 | FET General Purpose Power | R-PSSO-G2 | 19 ns | 110ns | 100 ns | 99 ns | 195A | 20V | SILICON | DRAIN | SWITCHING | 370W Tc | 900A | 75V | N-Channel | 9370pF @ 50V | 3m Ω @ 140A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPB60R165CPATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb60r165cpatma1-datasheets-0099.pdf | 600V | 21A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 40 Weeks | 3 | no | No | Halogen Free | SINGLE | GULL WING | 4 | 192W | 1 | R-PSSO-G2 | 12 ns | 5ns | 5 ns | 50 ns | 21A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 192W Tc | 522 mJ | N-Channel | 2000pF @ 100V | 165m Ω @ 12A, 10V | 3.5V @ 790μA | 21A Tc | 52nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SUM110P04-04L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0404le3-datasheets-0474.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 4.83mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | 4.2MOhm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | GULL WING | 4 | 1 | Single | 3.75W | 1 | Other Transistors | R-PSSO-G2 | 25 ns | 30ns | 110 ns | 190 ns | 110A | 20V | SILICON | SWITCHING | 40V | 3.75W Ta 375W Tc | 240A | -40V | P-Channel | 11200pF @ 25V | 4.2m Ω @ 30A, 10V | 3V @ 250μA | 110A Tc | 350nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STP140NF75 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp140nf75-datasheets-0478.pdf | 75V | 120A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 7.5mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | STP140 | 3 | Single | 310W | 1 | FET General Purpose Power | 30 ns | 140ns | 90 ns | 130 ns | 120A | 20V | SILICON | DRAIN | SWITCHING | 4V | 310W Tc | TO-220AB | 480A | 750 mJ | 75V | N-Channel | 5000pF @ 25V | 7.5m Ω @ 70A, 10V | 4V @ 250μA | 120A Tc | 218nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SUM110P06-08L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum110p0608le3-datasheets-0484.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 14 Weeks | 1.437803g | No SVHC | 8MOhm | 3 | Tin | No | 1 | Single | 3.75W | 1 | 175°C | TO-263 (D2Pak) | 9.2nF | 20 ns | 190ns | 300 ns | 140 ns | -110A | 20V | 60V | -1V | 3.75W Ta 272W Tc | 6.5mOhm | -60V | P-Channel | 9200pF @ 25V | 8mOhm @ 30A, 10V | 3V @ 250μA | 110A Tc | 240nC @ 10V | 8 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SUM90P10-19L-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-sum90p1019le3-datasheets-0383.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.41mm | 5.08mm | 9.65mm | Lead Free | 2 | 14 Weeks | 1.437803g | No SVHC | 19mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 4 | 1 | Single | 375W | 1 | Other Transistors | 175°C | R-PSSO-G2 | 20 ns | 510ns | 870 ns | 145 ns | -90A | 20V | SILICON | DRAIN | SWITCHING | 100V | -3V | 13.6W Ta 375W Tc | 245 mJ | -100V | P-Channel | 11100pF @ 50V | -3 V | 19m Ω @ 20A, 10V | 3V @ 250μA | 90A Tc | 326nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| IPP200N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp200n15n3gxksa1-datasheets-0509.pdf | TO-220-3 | Lead Free | 3 | 13 Weeks | 3 | yes | EAR99 | e3 | Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 150W | 1 | FET General Purpose Powers | Not Qualified | 14 ns | 11ns | 6 ns | 23 ns | 50A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150W Tc | TO-220AB | 200A | 0.02Ohm | N-Channel | 1820pF @ 75V | 20m Ω @ 50A, 10V | 4V @ 90μA | 50A Tc | 31nC @ 10V | 8V 10V | ±20V |
