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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Datasheet | Length | Width | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Telecom IC Type | Operating Temperature (Max) | Operating Temperature (Min) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Power Supplies | Supply Current-Max | Qualification Status | JESD-30 Code | Screening Level | Data Rate | Number of I/O | Core Architecture | RAM Size | Output Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Special Feature | Application | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Product Weight (g) | Input Voltage (Min) | Input Voltage (Max) | Diode Element Material | Power Dissipation-Max | Rep Pk Reverse Voltage-Max | JEDEC-95 Code | Forward Voltage-Max | Diode Type | Regulator Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | Channel Type | Number of Transceivers | Isolation | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Avalanche Energy Rating (Eas) | Adjustability | Line Regulation | Load Regulation | Dropout Voltage1-Max | Output Voltage1-Max | Voltage Tolerance-Max | Output Voltage1-Min | Input Voltage Absolute-Max | Output Current1-Max | Program Memory Type | Program Memory Size | Operating Temperature TJ-Max | Operating Temperature TJ-Min | Number of Terminals | Output Voltage1-Nom | Device Core | SPI | ECCN (US) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | HTS | Lead Shape | Minimum Input Voltage (V) | Typical Input Voltage (V) | Maximum Input Voltage (V) | Output Voltage (V) | Output Current (A) | Minimum Isolation Voltage | Input/Output Type | Switching Frequency (kHz) | Switching Regulator | Efficiency (%) | On/Off Logic | Maximum Collector-Emitter Voltage (V) | Typical Collector Emitter Saturation Voltage (V) | Maximum Gate Emitter Voltage (V) | Maximum Power Dissipation (mW) | Maximum Continuous Collector Current (A) | Maximum Gate Emitter Leakage Current (uA) | Military | Output Power (W) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | Interface Type | No. of Timers | Number of ADCs | ADC Resolution (bit) | USART | Maximum Expanded Memory Size | Watchdog | CECC Qualified | PWM | AEC Qualified Number | Maximum Reverse Voltage (V) | Maximum Reverse Current (uA) | Minimum Tuning Ratio | Tuning Ratio Test Condition | Minimum Diode Capacitance (pF) |
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| IPB60R380C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | HIGH VOLTAGE | compliant | e3 | TIN | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 83W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 10.6A | 30A | 0.38Ohm | 210 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB049NE7N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Powers | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 75V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 80A | 320A | 0.0049Ohm | 370 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB160N04S3-H2 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | 8541.29.00.95 | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 214W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 160A | 640A | 0.0021Ohm | 898 mJ | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE6250G V33 | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | BICMOS | 1.75mm | RoHS Compliant | 5mm | 4mm | compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | 260 | 3.3V | 1.27mm | 8 | INTERFACE CIRCUIT | 40 | Network Interfaces | 3.35V | 0.07mA | Not Qualified | R-PDSO-G8 | AEC-Q100 | 1000 Mbps | 1 | 8 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB044N08NN3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 80V | METAL-OXIDE SEMICONDUCTOR | 18A | 360A | 0.0044Ohm | 660 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ600N12K | Infineon Technologies AG | $186.38 |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | NOT SPECIFIED | 1 | R-XUFM-X2 | SINGLE | ISOLATED | GENERAL PURPOSE | SILICON | 1200V | RECTIFIER DIODE | 19000A | 1 | 735A | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BBY 66-05W H6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | VCO|Tuner | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-bby6602ve6327xt-datasheets-1012.pdf | 3 | Dual Common Cathode | EAR99 | -55 | 150 | SOT-323 | SOT-323 | Surface Mount | 0.9(Max) | 2 | 1.25 | 3 | Gull-wing | No | AEC-Q101 | 12 | 0.02 | 5 | 1V/4.5V | 66@1V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FF600R12KF4NOSA1 | Infineon Technologies AG | $735.07 |
Min: 1 Mult: 1 |
download | Tray | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-ff600r12kf4nosa1-datasheets-6413.pdf | 10 | Dual | N | EAR99 | -40 | 150 | IHM130-2 | Screw | 38 | 140 | 130 | 10 | 1200 | 2.7 | ±20 | 3900000 | 600 | 0.4 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27012DX/HB | Infineon Technologies AG |
Min: 1 Mult: 1 |
Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015dxhbb-datasheets-7088.pdf | 12 | Fixed | 2 | Isolated | -55 | 125 | Case X | Screw | 9.65(Max) | 38.1 | 76.2 | 12 | Military | 160 | 270 | 400 | 12|-12 | 6.4 | DC/DC | Yes | Positive | 96 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ1800R12KF4NOSA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-fz1800r12kf4nosa1-datasheets-7073.pdf | 9 | Triple Common Emitter Common Gate | N | EAR99 | -40 | 125 | IHM190-2 | Screw | 38 | 190 | 140 | 9 | 1200 | 2.7 | ±20 | 11000 | 1800 | 0.4 | No | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAKTC1766192F80HLBBX | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-saktc1766192f80hlbb-datasheets-1857.pdf | 176 | 81 | TriCore | 8KB | CAN Controller | Flash | 1.5MB | TriCore | EAR99 | -40 | 125 | QFP | LQFP | Surface Mount | 1.4 | 24 | 24 | 176 | 3.13|1.42 | 1.58|3.47 | 1.5|3.3 | Automotive | 8542.31.00.01 | Gull-wing | TC17xx | RISC | 80 | 80 | 32 | Yes | ASC/CAN/MLI/MSC/SSC | 1 | Dual | 10/12 | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF-C161O-LM 3V HA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-sabc161klmha-datasheets-9900.pdf | 80 | 63 | C166 | 2KB | CAN Controller | ROMLess | C166 | 1 | EAR99 | -40 | 85 | QFP | MQFP | Surface Mount | 2 | 14 | 14 | 80 | 3 | 3.6 | 3.3 | Gull-wing | 1500 | C166 | CISC|RISC | 20 | 20 | 16 | No | SPI/USART | 5 | Single | 10 | 1 | 16MB | 1 | No | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAKXC8662FRA BC | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-safxc8661friab-datasheets-1879.pdf | 38 | 19 | 8051 | 768B | Flash | 4KB | XC800 | 1 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7002 L6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | compliant | e3 | MATTE TIN | YES | DUAL | GULL WING | 260 | 3 | 150°C | 40 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 0.5W | 60V | METAL-OXIDE SEMICONDUCTOR | 0.3A | 3Ohm | 3 pF | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ16DN25NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | S-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | 10.9A | 44A | 0.165Ohm | 120 mJ | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4270-2D | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | BIPOLAR | 2.35mm | RoHS Compliant | 6.5mm | 6.22mm | icon-pbfree yes | EAR99 | not_compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1.14mm | 4 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PSSO-G4 | AEC-Q100 | 1 | 6V | 42V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.05% | 0.025% | FIXED | 0.7V | 5.1V | 2% | 4.9V | 65V | 0.65A | 125°C | -40°C | 4 | 5V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BAS 40-05 E6327 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | SCHOTTKY | RoHS Compliant | EAR99 | compliant | 8541.10.00.70 | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | 150°C | -55°C | NOT SPECIFIED | 2 | R-PDSO-G3 | COMMON CATHODE, 2 ELEMENTS | SILICON | 0.25W | 40V | RECTIFIER DIODE | 0.12A | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP320N20N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 34A | 136A | 0.032Ohm | 190 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DZ540N22K | Infineon Technologies AG | $198.96 |
Min: 1 Mult: 1 |
RoHS Compliant | unknown | 2 | 150°C | 1 | Rectifier Diodes | SINGLE | 2200V | 1.64V | RECTIFIER DIODE | 16500A | 735A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27028SW/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015sxhb-datasheets-2850.pdf | 12 | Fixed | 1 | 85 | Isolated | 70mV | 1% | -55 | 125 | AFL | Through Hole | 9.65(Max) | 38.1 | 63.5 | 12 | Military | 160 | 270 | 400 | 28 | 4 | 500VDC | DC/DC | 600 | Yes | 85(Typ) | Positive | 112 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ASA2815D | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-asa2805desb-datasheets-8891.pdf | 8 | Fixed | 2 | Isolated | -20 | 85 | ASA | Through Hole | 6.86(Max) | 27.31(Max) | 27.31(Max) | 8 | Military | 8542.39.00.01 | 16 | 28 | 40 | 15|-15 | 0.267 | DC/DC | Yes | 5 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XMC1202T028X0032ABXU | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-xmc1202t028x0032abxu-datasheets-2866.pdf | 28 | 26 | ARM | 16KB | Flash | 32KB | ARM Cortex M0 | 2 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FZ2400R12KL4CNOSA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-fz2400r12kl4cnosa1-datasheets-9854.pdf | 9 | Triple Common Emitter Common Gate | N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FP40R12KE3 / NO GEL | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tray | Yes with exemptions | /files/infineontechnologiesag-fp40r12ke3withgelthermocoup-datasheets-3355.pdf | 24 | Hex | N | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| C167CRLMHAKXUMA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-c167srlmhakxqla1-datasheets-8323.pdf | 144 | 111 | C166 | 4KB | CAN Controller | ROMLess | C166 | 1 | -40 | 125 | QFP | MQFP | Surface Mount | 2.4 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | Gull-wing | 1500 | C166 | RISC|CISC | 25 | 25 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | 1 | No | 4 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| XC2287M72F80LAAKXUMA1 | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-xc2287m72f80laakxuma1-datasheets-4672.pdf | 144 | 119 | C166 | 48KB | CAN Controller | Flash | 576KB | C166SV2 | 1 | 1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD70N03S4L-04 | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | ULTRA LOW RESISTANCE | compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | N-CHANNEL | 68W | 30V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 70A | 280A | 0.0043Ohm | 57 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD034N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-252AA | 100A | 400A | 0.0034Ohm | 149 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB065N15N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150V | METAL-OXIDE SEMICONDUCTOR | TO-263 | 130A | 520A | 0.0065Ohm | 780 mJ | 6 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB038N12N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 120V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 120A | 480A | 0.0038Ohm | 900 mJ | 2 |
