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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Type | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | Height Seated (Max) | RoHS Status | Datasheet | Length | Width | Factory Lead Time | Pbfree Code | ECCN Code | Additional Feature | Reach Compliance Code | HTS Code | Number of Functions | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Supply Voltage | Terminal Pitch | Pin Count | Temperature Grade | Operating Temperature (Max) | Operating Temperature (Min) | Supply Voltage-Max (Vsup) | Supply Voltage-Min (Vsup) | Time@Peak Reflow Temperature-Max (s) | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Screening Level | Number of I/O | Core Architecture | RAM Size | Output Type | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Power Dissipation-Max (Abs) | Special Feature | Application | DS Breakdown Voltage-Min | FET Technology | Number of Outputs | Product Weight (g) | Speed | uPs/uCs/Peripheral ICs Type | Bit Size | Has ADC | DMA Channels | PWM Channels | DAC Channels | ROM Programmability | On Chip Program ROM Width | Input Voltage (Min) | Input Voltage (Max) | Diode Element Material | Rep Pk Reverse Voltage-Max | Reverse Current-Max | JEDEC-95 Code | Forward Voltage-Max | Diode Type | Regulator Type | Non-rep Pk Forward Current-Max | Number of Phases | Output Current-Max | ROM (words) | RAM (bytes) | Clock Frequency | Address Bus Width | External Data Bus Width | Isolation | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Dropout Voltage1-Nom | Load Regulation-Max(%) | Line Regulation-Max (%/V) | Avalanche Energy Rating (Eas) | Adjustability | Line Regulation | Load Regulation | Dropout Voltage1-Max | Output Voltage1-Max | Voltage Tolerance-Max | Output Voltage1-Min | Input Voltage Absolute-Max | Output Current1-Max | Program Memory Type | Program Memory Size | Operating Temperature TJ-Max | Operating Temperature TJ-Min | Number of Terminals | Output Voltage1-Nom | Device Core | SPI | ECCN (US) | Minimum Operating Temperature (°C) | Maximum Operating Temperature (°C) | Standard Package Name | Supplier Package | Mounting | Package Height | Package Length | Package Width | PCB changed | Minimum Operating Supply Voltage (V) | Maximum Operating Supply Voltage (V) | Typical Operating Supply Voltage (V) | Supplier Temperature Grade | HTS | Lead Shape | Minimum Input Voltage (V) | Typical Input Voltage (V) | Maximum Input Voltage (V) | Output Voltage (V) | Output Current (A) | Input/Output Type | Switching Frequency (kHz) | Switching Regulator | Efficiency (%) | On/Off Logic | Maximum Power Dissipation (mW) | Military | Output Power (W) | Family Name | Instruction Set Architecture | Maximum CPU Frequency (MHz) | Maximum Clock Rate (MHz) | Data Bus Width (bit) | Programmability | Interface Type | No. of Timers | Number of ADCs | ADC Resolution (bit) | USART | I2C | Maximum DC Reverse Voltage (V) | Peak Reverse Repetitive Voltage (V) | Maximum Continuous Forward Current (A) | Peak Non-Repetitive Surge Current (A) | Peak Forward Voltage (V) | Peak Reverse Current (uA) | Maximum Expanded Memory Size | Watchdog | CECC Qualified | PWM | UART | Analog Comparators |
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| IPP90R1K2C3 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 83W | 900V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 5.1A | 10A | 1.2Ohm | 68 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB042N03L G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | TO-263AB | 70A | 400A | 0.006Ohm | 60 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N03MS G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 30A | 400A | 0.00175Ohm | 340 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF-XC164CS-32F40F BB-A | Infineon Technologies AG |
Min: 1 Mult: 1 |
CMOS | 1.6mm | RoHS Compliant | 14mm | 14mm | 3A991.A.2 | compliant | 8542.31.00.01 | YES | QUAD | GULL WING | NOT SPECIFIED | 2.5V | 0.5mm | INDUSTRIAL | 85°C | -40°C | 2.7V | 2.35V | NOT SPECIFIED | S-PQFP-G100 | 79 | 40 MHz | MICROCONTROLLER, RISC | 16 | YES | NO | YES | NO | FLASH | 8 | 262144 | 12288 | 40MHz | 24 | 16 | 100 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA057N06N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | e3 | Tin (Sn) | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 60A | 240A | 0.0057Ohm | 77 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N25K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 2 | Rectifier Diodes | Not Qualified | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2500V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF1104LPBF | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | NO | SINGLE | THROUGH-HOLE | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 170W | 40V | METAL-OXIDE SEMICONDUCTOR | TO-262AA | 100A | 400A | 0.009Ohm | 350 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-0255901HZA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl5012szb-datasheets-1857.pdf | 12 | Fixed | 1 | -55 | 125 | Case Z | Case Z | Through Hole | 9.65(Max) | 63.5 | 50.8 | 12 | Military | 8542.39.00.01 | Through Hole | 30 | 50 | 80 | 9 | 10 | DC/DC | Yes | Positive | 90 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATR2815TF/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-atr2815tfb-datasheets-9011.pdf | 10 | Fixed | 3 | 65 | Isolated | 75mV | 75mV | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 80SCLQ060SCS | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Schottky Diode | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-80sclq060scs-datasheets-3586.pdf | 3 | Dual Common Cathode | EAR99 | -55 | 150 | SMD | SMD-1 | Surface Mount | 3.1(Max) | 11.58(Max) | 16.02(Max) | 3 | 8541.10.00.80 | No | 60 | 60 | 80 | 400 | 0.95 | 300 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| 5962-9160001HXA | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-ahf2815dch-datasheets-7958.pdf | 8 | Fixed | 1 | Isolated | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAFXC161CJ16F40FAC | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-kx161cj16f20fbbxt-datasheets-3409.pdf | 144 | 99 | C166 | 8KB | CAN Controller | Flash | 128KB | C166 | 2 | 3A991.a.2 | -40 | 85 | QFP | TQFP | Surface Mount | 1.4 | 20 | 20 | 144 | 2.35|4.4 | 2.7|5.5 | 5|2.5 | Gull-wing | XC166 | CISC|DSP|RISC | 40 | 40 | 16 | Yes | CAN/I2C/SPI/USART | 5 | Single | 10 | 2 | 1 | 16MB | 1 | No | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SABC167SRLMHA+T | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-c167srlmhakxqla1-datasheets-8323.pdf | 144 | 111 | C166 | 4KB | CAN Controller | ROMLess | C166 | 1 | 70 | QFP | MQFP | Surface Mount | 2.4 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | 8542.31.00.01 | Gull-wing | 1500 | C166 | CISC|RISC | 25 | 25 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | No | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATR2815TF/ESB | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-atr2815tfb-datasheets-9011.pdf | 10 | Fixed | 3 | Isolated | -20 | 85 | ATR | Screw | 9.91(Max) | 53.59(Max) | 28.19 | 10 | Military | 8541.21.00.75 | 16 | 28 | 40 | 5|15|-15 | 4|0.5|-0.5 | DC/DC | Yes | 30 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSB013NE2LXI | Infineon Technologies AG |
Min: 1 Mult: 1 |
3 (168 Hours) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | 8541.29.00.95 | e4 | Silver/Nickel (Ag/Ni) | YES | BOTTOM | NO LEAD | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-MBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 57W | 25V | METAL-OXIDE SEMICONDUCTOR | 163A | 400A | 0.0018Ohm | 130 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R950C6 | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 150°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 37W | 600V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 4.4A | 12A | 0.95Ohm | 46 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC900N20NS3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | NOT SPECIFIED | 8 | 150°C | NOT SPECIFIED | 1 | Not Qualified | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 200V | METAL-OXIDE SEMICONDUCTOR | 15.2A | 61A | 0.09Ohm | 100 mJ | 5 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP200N25N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | compliant | NO | SINGLE | THROUGH-HOLE | NOT SPECIFIED | 3 | 175°C | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 250V | METAL-OXIDE SEMICONDUCTOR | TO-220AB | 64A | 256A | 0.02Ohm | 320 mJ | 3 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSC014N04LS | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree no | EAR99 | ULTRA LOW RESISTANCE, LOGIC LEVEL COMPATIBLE | not_compliant | 8541.29.00.95 | e3 | TIN | YES | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 40V | METAL-OXIDE SEMICONDUCTOR | 32A | 400A | 0.0019Ohm | 170 mJ | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DD98N22K | Infineon Technologies AG |
Min: 1 Mult: 1 |
RoHS Compliant | EAR99 | UL RECOGNIZED | compliant | 8541.10.00.80 | NO | UPPER | UNSPECIFIED | NOT SPECIFIED | 3 | 150°C | -40°C | NOT SPECIFIED | 2 | Rectifier Diodes | R-XUFM-X3 | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | ISOLATED | GENERAL PURPOSE | SILICON | 2200V | 25000μA | 1.53V | RECTIFIER DIODE | 2000A | 1 | 98A | 3 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48VSPBF | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | [object Object] | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE | compliant | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 175°C | 30 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 150W | 60V | METAL-OXIDE SEMICONDUCTOR | 72A | 290A | 0.012Ohm | 166 mJ | 2 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27015SX/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015sxhb-datasheets-2850.pdf | 12 | Fixed | 1 | 85 | Isolated | 10mV | 1% | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AHE2815DF/CH | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-ahe2812dfch-datasheets-1796.pdf | 10 | Fixed | 2 | Isolated | -55 | 125 | AHE | Screw | 12.57(Max) | 53.85(Max) | 28.45(Max) | 10 | Military | 17 | 28 | 40 | 15|-15 | 0.5|-0.5 | DC/DC | Yes | 15(Min) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| M3GB2815D/CKC | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-m3gb2803r3scka-datasheets-5302.pdf | 13 | Fixed | 2 | 110 | Isolated | 20mV | 0.5% | -55 | 135 | M3G | Screw | 12.07(Max) | 63.5 | 77.6(Max) | 13 | 18 | 28 | 50 | 15|-15 | 2.14 | DC/DC | 525 | Yes | 82(Typ) | 40 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAF-XC835MT-2FGI AB | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | RoHS Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-safxc835mt2fgiab-datasheets-2813.pdf | 24 | 25 | 8051 | 512B | Flash | 8KB | XC800 | EAR99 | -40 | 85 | SOP | DSO | Surface Mount | 2.45 | 15.6 | 7.6 | 24 | 2.5 | 5.5 | 5|3.3 | Industrial | Gull-wing | XC800 | CISC | 48 | 48 | 8 | Yes | I2C/UART | 3 | Single | 10 | 1 | 1 | No | 1 | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| S2805S | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-s2805dckc-datasheets-5674.pdf | 7 | Fixed | 1 | 50 | Isolated | 0.5% | 1% | ITAR (XI) | -55 | 85 | Case S | Case S | Screw | 10.8(Max) | 33.27 | 43.43 | 7 | 8542.39.00.01 | 18 | 28 | 40 | 5 | 2 | DC/DC | 575 | Yes | 80(Typ) | 10 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SAFC167CRLMHAT | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Tape and Reel | Supplier Unconfirmed | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-c167srlmhakxqla1-datasheets-8323.pdf | 144 | 111 | C166 | 4KB | ROMLess | C166 | 1 | -40 | 85 | QFP | MQFP | Surface Mount | 2.4 | 28 | 28 | 144 | 4.5 | 5.5 | 5 | 8542.31.00.01 | Gull-wing | 1500 | C166 | RISC|CISC | 25 | 25 | 16 | No | CAN/SPI/USART | 5 | Single | 10 | 1 | 16MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AFL27005DX/ES | Infineon Technologies AG |
Min: 1 Mult: 1 |
download | Step Down | RoHS non-compliant | https://pdf.utmel.com/r/datasheets/infineontechnologiesag-afl27015dxhbb-datasheets-7088.pdf | 12 | Fixed | 2 | Isolated | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TLE4270-2G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | BIPOLAR | 4.4mm | RoHS Compliant | 10mm | 9.25mm | icon-pbfree yes | EAR99 | not_compliant | 8542.39.00.01 | 1 | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 1.7mm | 4 | NOT SPECIFIED | Other Regulators | Not Qualified | R-PSSO-G5 | AEC-Q100 | 1 | 6V | 42V | FIXED POSITIVE SINGLE OUTPUT LDO REGULATOR | 0.35V | 0.05% | 0.025% | FIXED | 0.7V | 5.1V | 2% | 4.9V | 65V | 0.65A | 125°C | -40°C | 5 | 5V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB039N10N3 G | Infineon Technologies AG |
Min: 1 Mult: 1 |
1 (Unlimited) | ENHANCEMENT MODE | RoHS Compliant | icon-pbfree yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | 175°C | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G6 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | N-CHANNEL | 214W | 100V | METAL-OXIDE SEMICONDUCTOR | TO-263AA | 160A | 640A | 0.0039Ohm | 340 mJ | 6 |
