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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Operating Temperature (Max) | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI3453DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3453dvt1ge3-datasheets-1121.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | 1 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 9ns | 7 ns | 11 ns | -3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Tc | P-Channel | 155pF @ 15V | 165m Ω @ 2.5A, 10V | 2.5V @ 250μA | 3.4A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMZ130UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmz130uneyl-datasheets-1263.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 3 | Tin | BOTTOM | NO LEAD | 3 | 1 | 5.3 ns | 12ns | 5 ns | 16 ns | 1.8A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 350mW Ta 6.25W Tc | 0.15Ohm | N-Channel | 93pF @ 10V | 150m Ω @ 1.8A, 4.5V | 950mV @ 250μA | 1.8A Ta | 1.6nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17573Q5BT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 5mm | 6mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 950μm | EAR99 | AVALANCHE RATED | Gold | not_compliant | e4 | DUAL | NO LEAD | 260 | CSD17573 | Single | NOT SPECIFIED | 3.2W | 1 | 6 ns | 20ns | 7 ns | 40 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 195W Tc | 43A | 400A | 390 pF | N-Channel | 9000pF @ 15V | 1m Ω @ 35A, 10V | 1.8V @ 250μA | 100A Ta | 64nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NVR4003NT3G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntr4003nt3g-datasheets-5886.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | 9 Weeks | 1.437803g | 3 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | 1 | Single | 690mW | 1 | FET General Purpose Power | 16.7 ns | 47.9ns | 64.2 ns | 65.1 ns | 500mA | 20V | SILICON | SWITCHING | 690mW Ta | 0.5A | 2Ohm | 30V | N-Channel | 21pF @ 5V | 1.5 Ω @ 10mA, 4V | 1.4V @ 250μA | 500mA Ta | 1.15nC @ 5V | 2.5V 4V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| CPH3348-TL-W | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/onsemiconductor-cph3348tlw-datasheets-1081.pdf | TO-236-3, SC-59, SOT-23-3 | Lead Free | 5 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | Tin | not_compliant | 8.8 ns | 80ns | 50 ns | 41 ns | 3A | 10V | 12V | -1.4V | 1W Ta | P-Channel | 405pF @ 6V | 70m Ω @ 1.5A, 4.5V | 1.4V @ 1mA | 3A Ta | 5.6nC @ 4.5V | 1.8V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2075U-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn2075u7-datasheets-1084.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 40 Weeks | 7.994566mg | No SVHC | 45mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | Tin | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 800mW | 1 | FET General Purpose Powers | Not Qualified | 7.4 ns | 9.8ns | 6.7 ns | 28.1 ns | 4.2A | 8V | SILICON | SWITCHING | 20V | 20V | 1V | 800mW Ta | N-Channel | 594.3pF @ 10V | 38m Ω @ 3.6A, 4.5V | 1V @ 250μA | 4.2A Ta | 7nC @ 4.5V | 2.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||
| PMV230ENEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv230enear-datasheets-1101.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | LOGIC LEVEL COMPATIBLE | AEC-Q101; IEC-60134 | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | 1.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 480mW Ta 1.45W Tc | TO-236AB | 0.222Ohm | N-Channel | 177pF @ 30V | 222m Ω @ 1.5A, 10V | 2.7V @ 250μA | 1.5A Ta | 4.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3493DDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3493ddvt1ge3-datasheets-1115.pdf | SOT-23-6 Thin, TSOT-23-6 | 1.1mm | 6 | 14 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 2W | 1 | 150°C | R-PDSO-G6 | 25 ns | 95 ns | -7.5A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 3.6W Tc | 8A | 0.024Ohm | -20V | P-Channel | 1825pF @ 10V | 24m Ω @ 7.5A, 4.5V | 1V @ 250μA | 8A Tc | 30nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMN21D2UFB-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn21d2ufb7b-datasheets-0792.pdf | 3-UFDFN | 1.08mm | 480μm | 675μm | Lead Free | 3 | 15 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 1 | 40 | 1 | FET General Purpose Power | 3.5 ns | 4.2ns | 9.8 ns | 19.6 ns | 760mA | 12V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 380mW Ta | 0.76A | 0.99Ohm | N-Channel | 27.6pF @ 16V | 990m Ω @ 100mA, 4.5V | 1V @ 250μA | 760mA Ta | 0.93nC @ 10V | 1.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||
| 2N7000-D74Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-2n7002-datasheets-6168.pdf&product=onsemiconductor-2n7000d74z-6829473 | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | 3 | 11 Weeks | yes | NO | BOTTOM | NOT SPECIFIED | 2N7000 | NOT SPECIFIED | 1 | FET General Purpose Power | Not Qualified | O-PBCY-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 400mW Ta | 0.2A | 5Ohm | 5 pF | N-Channel | 50pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Ta | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3900UFA-7B | Diodes Incorporated | $0.69 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn3900ufa7b-datasheets-1144.pdf | 3-XFDFN | Lead Free | 3 | 15 Weeks | No SVHC | 3 | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | BOTTOM | 260 | 1 | Single | 30 | 1 | 10.5 ns | 7.8ns | 23.4 ns | 80.6 ns | 650mA | 8V | SILICON | DRAIN | SWITCHING | 390mW Ta | 0.65A | 30V | N-Channel | 42.2pF @ 25V | 760m Ω @ 200mA, 4.5V | 950mV @ 250μA | 550mA Ta | 0.7nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||
| STD2HNK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq2hnk60zrap-datasheets-8947.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 19.05mm | 6.35mm | 6.35mm | Lead Free | 3 | 12 Weeks | 4.535924g | No SVHC | 4.8Ohm | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | STD2HNK | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 10 ns | 30ns | 50 ns | 13 ns | 2A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 2A | 8A | 600V | N-Channel | 280pF @ 25V | 3.75 V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| SSM3K56FS,LF | Toshiba Semiconductor and Storage | $0.03 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | SC-75, SOT-416 | 16 Weeks | 3 | unknown | Single | 150mW | 1 | 800mA | 8V | 150mW Ta | 20V | N-Channel | 55pF @ 10V | 235m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM2303CX RFG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm2303cxrfg-datasheets-1020.pdf | TO-236-3, SC-59, SOT-23-3 | 42 Weeks | SOT-23 | 30V | 700mW Ta | P-Channel | 565pF @ 10V | 180mOhm @ 1.3A, 10V | 3V @ 250μA | 1.3A Ta | 3.2nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB950UPELYL | Nexperia USA Inc. | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmzb950upelyl-datasheets-0727.pdf | 3-XFDFN | 3 | 8 Weeks | IEC-60134 | YES | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta | 0.5A | P-Channel | 43pF @ 10V | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 500mA Ta | 2.1nC @ 4.5V | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSF015N06TL | ROHM Semiconductor | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rsf015n06tl-datasheets-1035.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 16 Weeks | 3 | EAR99 | not_compliant | DUAL | NOT SPECIFIED | 3 | 1 | NOT SPECIFIED | 1 | 6 ns | 9ns | 10 ns | 15 ns | 1.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 800mW Ta | 60V | N-Channel | 110pF @ 10V | 290m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 2nC @ 5V | 4V 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZB320UPEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmzb320upeyl-datasheets-0962.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | Tin | BOTTOM | NO LEAD | 3 | 1 | 3 ns | 6ns | 5 ns | 22 ns | 1A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 350mW Ta 6.25W Tc | 1A | 0.51Ohm | P-Channel | 122pF @ 15V | 510m Ω @ 1A, 4.5V | 950mV @ 250μA | 1A Ta | 1.4nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB43UNEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmxb43unez-datasheets-1026.pdf | 3-XDFN Exposed Pad | 3 | 4 Weeks | 3 | No | YES | DUAL | 3 | 1 | 6 ns | 20ns | 4 ns | 17 ns | 3.2A | 8V | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 400mW Ta 8.33W Tc | 0.054Ohm | N-Channel | 551pF @ 10V | 54m Ω @ 3.2A, 4.5V | 900mV @ 250μA | 3.2A Ta | 10nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RUE002N02TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/rohm-rue002n02tl-datasheets-6826.pdf | SC-75, SOT-416 | 1.6mm | 700μm | 800μm | Lead Free | 3 | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 150mW | 1 | FET General Purpose Power | 5 ns | 10ns | 10 ns | 15 ns | 200mA | 8V | SILICON | SWITCHING | 150mW Ta | 0.2A | 1.4Ohm | 20V | N-Channel | 25pF @ 10V | 1.2 Ω @ 200mA, 2.5V | 1V @ 1mA | 200mA Ta | 1.2V 2.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||
| NVTR4503NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-ntr4503nt1g-datasheets-9070.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.01mm | 1.4mm | Lead Free | 3 | 4 Weeks | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 3 | Single | 730mW | 1 | FET General Purpose Power | 5.8 ns | 14 ns | 2A | 20V | SILICON | SWITCHING | 30V | 420mW Ta | 2A | 25 pF | N-Channel | 135pF @ 15V | 110m Ω @ 2.5A, 10V | 3V @ 250μA | 1.5A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| RHK005N03T146 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rhk005n03t146-datasheets-0843.pdf | 30V | 500mA | TO-236-3, SC-59, SOT-23-3 | Lead Free | 3 | No SVHC | 350mOhm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 15 ns | 500mA | 20V | SILICON | SWITCHING | 1V | 200mW Ta | 0.5A | 30V | N-Channel | 45pF @ 10V | 1 V | 550m Ω @ 500mA, 10V | 2.5V @ 1mA | 500mA Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTE4151PT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-nta4151pt1g-datasheets-5315.pdf | -20V | -760mA | SC-89, SOT-490 | 1.6764mm | 800μm | 950μm | Lead Free | 3 | 8 Weeks | 260mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 3 | Single | 40 | 313mW | 1 | Other Transistors | 8 ns | 8.2ns | 8.2 ns | 29 ns | 760mA | 6V | SILICON | SWITCHING | 20V | 313mW Tj | 0.76A | -20V | P-Channel | 156pF @ 5V | 360m Ω @ 350mA, 4.5V | 1.2V @ 250μA | 760mA Tj | 2.1nC @ 4.5V | 1.8V 4.5V | ±6V | ||||||||||||||||||||||||||||||||||||
| TSM160P04LCRHRLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm160p04lcrhrlg-datasheets-0960.pdf | 8-PowerTDFN | NOT SPECIFIED | NOT SPECIFIED | 40V | 69W Tc | P-Channel | 2712pF @ 20V | 16m Ω @ 10A, 10V | 2.5V @ 250μA | 51A Tc | 48nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD150N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std150n3llh6-datasheets-9742.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 2.8mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD15 | 3 | Single | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 18ns | 46 ns | 75 ns | 80A | 20V | SILICON | DRAIN | SWITCHING | 110W Tc | 525 mJ | 30V | N-Channel | 3700pF @ 25V | 2.5 V | 2.8m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RW1E014SNT2R | ROHM Semiconductor | $17.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | Lead Free | 6 | 10 Weeks | yes | EAR99 | e2 | Tin/Copper (Sn/Cu) | 700mW | DUAL | FLAT | 260 | 6 | 150°C | 10 | 1 | FET General Purpose Power | Not Qualified | R-PDSO-F6 | 70pF | 1.4A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 170mOhm | 240 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ350UPEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/nexperiausainc-pmz350upeyl-datasheets-0925.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 330mOhm | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta 3.125W Tc | 1A | P-Channel | 127pF @ 10V | 450m Ω @ 300mA, 4.5V | 950mV @ 250μA | 1A Ta | 1.9nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON7406 | Alpha & Omega Semiconductor Inc. | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | 8-PowerVDFN | 5 | 8 | EAR99 | DUAL | FLAT | 8 | 16.7W | 1 | FET General Purpose Power | Not Qualified | S-PDSO-F5 | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3.1W Ta 15.5W Tc | 50A | N-Channel | 888pF @ 15V | 17m Ω @ 9A, 10V | 2.4V @ 250μA | 9A Ta 25A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ370UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmz370uneyl-datasheets-0745.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 370mOhm | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 900mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 360mW Ta 2.7W Tc | 0.9A | N-Channel | 78pF @ 25V | 490m Ω @ 500mA, 4.5V | 1.05V @ 250μA | 900mA Ta | 1.16nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UFB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2400ufb47-datasheets-0857.pdf | 3-XFDFN | 1.08mm | 350μm | 675μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Gold | No | e4 | BOTTOM | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 4.11 ns | 3.82ns | 9.6 ns | 14.8 ns | 750mA | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 470mW Ta | 0.75A | 0.55Ohm | N-Channel | 36pF @ 16V | 550m Ω @ 600mA, 4.5V | 900mV @ 250μA | 750mA Ta | 0.5nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| BUK768R1-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk768r1100e118-datasheets-0492.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 263W | 1 | R-PSSO-G2 | 23.5 ns | 44.1ns | 49.6 ns | 72 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 0.0081Ohm | 219 mJ | 100V | N-Channel | 7380pF @ 25V | 8.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 108nC @ 10V | 10V | ±20V |
