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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| RSF010P05TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/rohmsemiconductor-rsf010p05tl-datasheets-1731.pdf | 3-SMD, Flat Lead | Lead Free | 3 | 16 Weeks | 3 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 3 | 1 | 10 | 1 | Other Transistors | 6 ns | 4ns | 6 ns | 18 ns | 1A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 45V | 800mW Ta | 1A | 0.46Ohm | -45V | P-Channel | 160pF @ 10V | 460m Ω @ 1A, 10V | 2.5V @ 1mA | 1A Ta | 2.3nC @ 5V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CEDM7004VL TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cedm7004vltrpbfree-datasheets-1094.pdf | SC-101, SOT-883 | 6 Weeks | 30V | 100mW Ta | N-Channel | 43pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 450mA Ta | 0.79nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2033UVT-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2033uvt7-datasheets-1405.pdf | SOT-23-6 Thin, TSOT-23-6 | 23 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | 6.5 ns | 13.4ns | 21.8 ns | 51.5 ns | 4.2A | 8V | 20V | 1.2W Ta | P-Channel | 845pF @ 15V | 65m Ω @ 4.2A, 4.5V | 900mV @ 250μA | 4.2A Ta | 10.4nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3024SFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3024sfg7-datasheets-1506.pdf | 8-PowerVDFN | 5 | 6 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 2.9 ns | 7.9ns | 3.1 ns | 14.6 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 900mW Ta | 6.3A | 0.023Ohm | 30V | N-Channel | 479pF @ 15V | 23m Ω @ 10A, 10V | 2.4V @ 250μA | 7.5A Ta | 10.5nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||
| ZXMN10A25K | Diodes Incorporated | $0.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2006 | https://pdf.utmel.com/r/datasheets/diodesincorporated-zxmn10a25k-datasheets-1524.pdf | 100V | 2.9A | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | No SVHC | no | EAR99 | e3 | Matte Tin (Sn) | SINGLE | GULL WING | 260 | 3 | 40 | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 4.2A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.11W Ta | 6.4A | 21A | 0.125Ohm | N-Channel | 859pF @ 50V | 125m Ω @ 2.9A, 10V | 4V @ 250μA | 4.2A Ta | 17.16nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SSM5G10TU(TE85L,F) | Toshiba Semiconductor and Storage | $1.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIII | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2009 | https://pdf.utmel.com/r/datasheets/toshibasemiconductorandstorage-ssm6n7002bfelm-datasheets-0834.pdf | 6-SMD (5 Leads), Flat Lead | 5 | No | 1.5A | 8V | 20V | 500mW Ta | P-Channel | 250pF @ 10V | 213m Ω @ 1A, 4V | 1V @ 1mA | 1.5A Ta | 6.4nC @ 4V | Schottky Diode (Isolated) | 1.8V 4V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSM002P03T2L | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/rohmsemiconductor-rsm002p03t2l-datasheets-1535.pdf | -30V | -200mA | SOT-723 | Lead Free | 3 | 16 Weeks | No SVHC | 2.4Ohm | 3 | yes | EAR99 | No | e2 | TIN COPPER | DUAL | FLAT | 260 | 3 | Single | 10 | 150mW | 1 | Other Transistors | 8 ns | 5ns | 5 ns | 30 ns | 200mA | 20V | SILICON | SWITCHING | 30V | 150mW Ta | 0.2A | -30V | P-Channel | 30pF @ 10V | 1.4 Ω @ 200mA, 10V | 2.5V @ 1mA | 200mA Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MCP87130T-U/MF | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2004 | /files/microchiptechnology-mcp87130tumf-datasheets-1570.pdf | 8-PowerTDFN | 5mm | 1mm | 6mm | Lead Free | 11 Weeks | No SVHC | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) - annealed | YES | 260 | MCP87130 | 40 | 2.2W | FET General Purpose Powers | 2.2 ns | 5.4ns | 2.1 ns | 4.2 ns | 54A | 10V | Single | 1.35V | 2.1W Ta | 43A | 25V | N-Channel | 400pF @ 12.5V | 1.35 V | 13.5m Ω @ 10A, 10V | 1.7V @ 250μA | 43A Tc | 8nC @ 4.5V | 3.3V 10V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||
| DMN3024SFG-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmn3024sfg7-datasheets-1506.pdf | 8-PowerVDFN | 5 | 15 Weeks | 72.007789mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | 260 | 8 | 1 | Single | 40 | 1 | FET General Purpose Power | S-PDSO-N5 | 2.9 ns | 7.9ns | 3.1 ns | 14.6 ns | 7.5A | 25V | SILICON | DRAIN | SWITCHING | 30V | 30V | 900mW Ta | 6.3A | 0.023Ohm | N-Channel | 479pF @ 15V | 23m Ω @ 10A, 10V | 2.4V @ 250μA | 7.5A Ta | 10.5nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| SSM3J325F,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | TO-236-3, SC-59, SOT-23-3 | 270pF | 12 Weeks | Single | 2A | 8V | 20V | 600mW Ta | -20V | P-Channel | 270pF @ 10V | 150m Ω @ 1A, 4.5V | 2A Ta | 4.6nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2033UVT-7 | Diodes Incorporated | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp2033uvt7-datasheets-1405.pdf | SOT-23-6 Thin, TSOT-23-6 | 30 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 1 | Single | 30 | 6.5 ns | 13.4ns | 21.8 ns | 51.5 ns | 4.2A | 8V | 20V | 1.2W Ta | -20V | P-Channel | 845pF @ 15V | 65m Ω @ 4.2A, 4.5V | 900mV @ 250μA | 4.2A Ta | 10.4nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN3070SSN-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmn3070ssn7-datasheets-1106.pdf | TO-236-3, SC-59, SOT-23-3 | 3.1mm | 1.3mm | 1.7mm | 3 | 16 Weeks | 7.994566mg | No SVHC | 59 | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 1 | Single | 1 | FET General Purpose Power | R-PDSO-G3 | 4.3 ns | 20.1ns | 4.1 ns | 4.4 ns | 4.2A | 20V | SILICON | SWITCHING | 30V | 30V | 780mW Ta | 0.04Ohm | N-Channel | 697pF @ 15V | 40m Ω @ 4.2A, 10V | 2.1V @ 250μA | 4.2A Ta | 13.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RHK003N06FRAT146 | ROHM Semiconductor | $1.19 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rhk003n06frat146-datasheets-1473.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | Unknown | 3 | EAR99 | not_compliant | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 300mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 2.5V | 200mW Ta | 1.5Ohm | N-Channel | 33pF @ 10V | 1 Ω @ 300mA, 10V | 2.5V @ 1mA | 300mA Ta | 6nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ950UPEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmz950upeyl-datasheets-1371.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 1.02Ohm | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 2.3 ns | 5ns | 6 ns | 13.5 ns | 500mA | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 360mW Ta 2.7W Tc | 0.5A | P-Channel | 43pF @ 10V | 1.4 Ω @ 500mA, 4.5V | 950mV @ 250μA | 500mA Ta | 2.1nC @ 4.5V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||
| PMXB120EPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/nexperiausainc-pmxb120epez-datasheets-1381.pdf | 3-XDFN Exposed Pad | 4 Weeks | 3 | Tin | No | 3 | 4 ns | 11ns | 7 ns | 16 ns | 2.4A | 20V | -30V | 30V | 400mW Ta 8.3W Tc | P-Channel | 309pF @ 15V | 120m Ω @ 2.4A, 10V | 2.5V @ 250μA | 2.4A Ta | 11nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP32D4S-7 | Diodes Incorporated | $0.35 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp32d4s13-datasheets-6060.pdf | TO-236-3, SC-59, SOT-23-3 | 3mm | 1mm | 1.4mm | 16 Weeks | 3 | EAR99 | No | e3 | Matte Tin (Sn) | 260 | Single | 30 | Other Transistors | 9.86 ns | 11.5ns | 21.9 ns | 31.8 ns | 300mA | 20V | 30V | 370mW Ta | P-Channel | 51.16pF @ 15V | 2.4 Ω @ 300mA, 10V | 2.4V @ 250μA | 300mA Ta | 1.2nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3K357R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | π-MOSV | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 60V | 1W Ta | N-Channel | 60pF @ 12V | 1.8 Ω @ 150mA, 5V | 2V @ 1mA | 650mA Ta | 1.5nC @ 5V | 3V 5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN3R5-40YSDX | Nexperia USA Inc. | $1.20 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn3r540ysdx-datasheets-1275.pdf | SC-100, SOT-669 | 12 Weeks | 40V | 115W Ta | N-Channel | 3245pF @ 20V | 3.5m Ω @ 25A, 10V | 3.6V @ 1mA | 120A Ta | 19nC @ 10V | Schottky Diode (Body) | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| LND150K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/microchiptechnology-lnd150n8g-datasheets-2839.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 5 Weeks | 1.437803g | No SVHC | 3 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | Single | 40 | 360mW | 1 | 90 ns | 450ns | 1.3 μs | 100 ns | 13mA | 20V | SILICON | SWITCHING | 360mW Ta | 500V | N-Channel | 10pF @ 25V | 1000 Ω @ 500μA, 0V | 13mA Tj | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| IRFH8324TR2PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/infineontechnologies-irfh8324tr2pbf-datasheets-1292.pdf | 8-PowerTDFN | 5.85mm | 1.17mm | 5mm | Lead Free | No SVHC | 3.1MOhm | 8 | No | Single | 3.6W | 1 | PQFN (5x6) | 2.38nF | 13 ns | 26ns | 8.5 ns | 14 ns | 23A | 20V | 30V | 1.8V | 3.6W Ta 54W Tc | 24 ns | 4.1mOhm | 30V | N-Channel | 2380pF @ 10V | 1.8 V | 4.1mOhm @ 20A, 10V | 2.35V @ 50μA | 23A Ta 90A Tc | 31nC @ 10V | 4.1 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| PMZB370UNE,315 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-pmzb370une315-datasheets-1356.pdf | 3-XFDFN | 3 | 20 Weeks | 3 | Tin | No | e3 | YES | BOTTOM | 3 | Single | 715mW | 1 | 11 ns | 9ns | 27 ns | 54 ns | 900mA | 8V | 30V | SILICON | DRAIN | SWITCHING | 360mW Ta 2.7W Tc | 0.9A | 0.49Ohm | 30V | N-Channel | 78pF @ 25V | 490m Ω @ 500mA, 4.5V | 1.05V @ 250μA | 900mA Ta | 1.16nC @ 15V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||
| RHK005N03FRAT146 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rhk005n03frat146-datasheets-1379.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 8 Weeks | Unknown | 3 | EAR99 | not_compliant | AEC-Q101 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 500mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 2.5V | 200mW Ta | 0.5A | 0.94Ohm | N-Channel | 45pF @ 10V | 550m Ω @ 500mA, 10V | 2.5V @ 1mA | 500mA Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| PMK50XP,518 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 2 (1 Year) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2010 | /files/nexperiausainc-pmk50xp518-datasheets-1392.pdf | 8-SOIC (0.154, 3.90mm Width) | 16 Weeks | 8 | Gold | No | Single | 5W | 8-SO | 1.02nF | 8.5 ns | 7.5ns | 35 ns | 82 ns | 7.9A | 12V | -20V | 20V | 5W Tc | 50mOhm | -20V | P-Channel | 1020pF @ 20V | 50mOhm @ 2.8A, 4.5V | 950mV @ 250μA | 7.9A Tc | 10nC @ 4.5V | 10 mΩ | 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PMXB75UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmxb75upez-datasheets-1386.pdf | 3-XDFN Exposed Pad | 3 | 4 Weeks | IEC-60134 | DUAL | NO LEAD | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-N3 | 2.9A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 317mW Ta 8.33W Tc | 0.085Ohm | P-Channel | 608pF @ 10V | 85m Ω @ 2.9A, 4.5V | 1V @ 250μA | 2.9A Ta | 12nC @ 4.5V | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RV2C001ZPT2L | ROHM Semiconductor | $0.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rv2c001zpt2l-datasheets-1360.pdf | SC-101, SOT-883 | 3 | 16 Weeks | No SVHC | 2.5Ohm | 1006 | EAR99 | not_compliant | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PBCC-N3 | 100mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | -1V | 100mW Ta | 0.1A | P-Channel | 15pF @ 10V | 3.8 Ω @ 100mA, 4.5V | 1V @ 100μA | 100mA Ta | 1.2V 4.5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||||
| HUFA76409D3ST | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, UltraFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-hufa76409d3st-datasheets-1237.pdf | 60V | 17A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 260.37mg | 3 | LIFETIME (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 49W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-G2 | 5.3 ns | 34ns | 50 ns | 41 ns | 17A | 16V | SILICON | DRAIN | SWITCHING | 49W Tc | TO-252AA | 0.075Ohm | 60V | N-Channel | 485pF @ 25V | 63m Ω @ 18A, 10V | 3V @ 250μA | 18A Tc | 15nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| SSM3J378R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | SOT-23-3 Flat Leads | 12 Weeks | 20V | 1W Ta | P-Channel | 840pF @ 10V | 29.8m Ω @ 3A, 4.5V | 1V @ 1mA | 6A Ta | 12.8nC @ 4.5V | 1.5V 4.5V | +6V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSU002P03T106 | ROHM Semiconductor | $0.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | -30V | -200mA | SC-70, SOT-323 | Lead Free | 3 | 10 Weeks | 2.4Ohm | 3 | yes | EAR99 | Copper, Silver, Tin | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | Other Transistors | 8 ns | 5ns | 5 ns | 30 ns | 250mA | 20V | SILICON | SWITCHING | 30V | 200mW Ta | 0.25A | -30V | P-Channel | 30pF @ 10V | 1.4 Ω @ 250mA, 10V | 2.5V @ 1mA | 250mA Ta | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PMZB1200UPEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-pmzb1200upeyl-datasheets-1247.pdf | 3-XFDFN | 3 | 8 Weeks | 3 | BOTTOM | NO LEAD | 3 | 1 | 410mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 310mW Ta 1.67W Tc | 0.41A | P-Channel | 43.2pF @ 15V | 1.4 Ω @ 410mA, 4.5V | 950mV @ 250μA | 410mA Ta | 1.2nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3453DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si3453dvt1ge3-datasheets-1121.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | EAR99 | unknown | e3 | Matte Tin (Sn) | YES | DUAL | GULL WING | NOT SPECIFIED | 6 | 1 | NOT SPECIFIED | 1 | Other Transistors | R-PDSO-G6 | 4 ns | 9ns | 7 ns | 11 ns | -3.4A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 3W Tc | P-Channel | 155pF @ 15V | 165m Ω @ 2.5A, 10V | 2.5V @ 250μA | 3.4A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V |
