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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Halogen Free | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRFR120PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | SMD/SMT | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfu120pbf-datasheets-9324.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 270mOhm | 3 | No | 77A | 100V | 1 | Single | 2.5W | 1 | D-Pak | 360pF | 6.8 ns | 27ns | 17 ns | 18 ns | 7.7A | 20V | 100V | 100V | 4V | 2.5W Ta 42W Tc | 270mOhm | N-Channel | 360pF @ 25V | 4 V | 270mOhm @ 4.6A, 10V | 4V @ 250μA | 7.7A Tc | 16nC @ 10V | 270 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RV2C010UNT2L | ROHM Semiconductor | $0.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rv2c010unt2l-datasheets-0780.pdf | SC-101, SOT-883 | 3 | 16 Weeks | No SVHC | 340mOhm | 1006 | EAR99 | not_compliant | BOTTOM | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PBCC-N3 | 1A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 20V | 20V | 1V | 400mW Ta | 1A | N-Channel | 40pF @ 10V | 470m Ω @ 500mA, 4.5V | 1V @ 1mA | 1A Ta | 1.2V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2550UFA-7B | Diodes Incorporated | $0.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn2550ufa7b-datasheets-0817.pdf | 3-XFDFN | 52.5pF | 2 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-N2 | 7.1 ns | 11ns | 36 ns | 105 ns | 600mA | 8V | SILICON | DRAIN | SWITCHING | 360mW Ta | 0.6A | 0.45Ohm | 20V | N-Channel | 52.5pF @ 16V | 450m Ω @ 200mA, 4.5V | 1V @ 250μA | 600mA Ta | 0.88nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMZ370UNEYL | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmz370uneyl-datasheets-0745.pdf | SC-101, SOT-883 | 3 | 8 Weeks | 370mOhm | IEC-60134 | BOTTOM | NO LEAD | 3 | 1 | R-PBCC-N3 | 900mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 360mW Ta 2.7W Tc | 0.9A | N-Channel | 78pF @ 25V | 490m Ω @ 500mA, 4.5V | 1.05V @ 250μA | 900mA Ta | 1.16nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN2400UFB4-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/diodesincorporated-dmn2400ufb47-datasheets-0857.pdf | 3-XFDFN | 1.08mm | 350μm | 675μm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | yes | EAR99 | HIGH RELIABILITY, LOW THRESHOLD | Gold | No | e4 | BOTTOM | 260 | 3 | 1 | Single | 40 | 1 | FET General Purpose Power | 4.11 ns | 3.82ns | 9.6 ns | 14.8 ns | 750mA | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 470mW Ta | 0.75A | 0.55Ohm | N-Channel | 36pF @ 16V | 550m Ω @ 600mA, 4.5V | 900mV @ 250μA | 750mA Ta | 0.5nC @ 4.5V | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK768R1-100E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-buk768r1100e118-datasheets-0492.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 12 Weeks | 3 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 3 | 263W | 1 | R-PSSO-G2 | 23.5 ns | 44.1ns | 49.6 ns | 72 ns | 100A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 263W Tc | 0.0081Ohm | 219 mJ | 100V | N-Channel | 7380pF @ 25V | 8.1m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 108nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP1555UFA-7B | Diodes Incorporated | $0.46 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp1555ufa7b-datasheets-0848.pdf | 3-XFDFN | 55.4pF | 2 | 6 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-N2 | 16 ns | 62ns | 186 ns | 232 ns | 200mA | 8V | SILICON | DRAIN | SWITCHING | 12V | 360mW Ta | 0.2A | 0.8Ohm | P-Channel | 55.4pF @ 10V | 800m Ω @ 200mA, 4.5V | 1V @ 250μA | 200mA Ta | 0.84nC @ 4.5V | 1.5V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDPF3860T | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdpf3860t-datasheets-0880.pdf | TO-220-3 Full Pack | 10.36mm | 16.07mm | 4.9mm | Lead Free | 3 | 8 Weeks | 2.27g | No SVHC | 3.802GOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 33.8W | 1 | FET General Purpose Power | Not Qualified | 15 ns | 17ns | 7 ns | 24 ns | 20A | 20V | SILICON | ISOLATED | SWITCHING | 2.5V | 33.8W Tc | TO-220AB | 80A | 278 mJ | 100V | N-Channel | 1800pF @ 25V | 38.2m Ω @ 5.9A, 10V | 4.5V @ 250μA | 20A Tc | 35nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| DMP2160UW-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/diodesincorporated-dmp2160uw7-datasheets-0908.pdf | SC-70, SOT-323 | 2.15mm | 1.1mm | 1.3mm | Lead Free | 3 | 6.010099mg | No SVHC | 100mOhm | 3 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 3 | 1 | Single | 350mW | 1 | 150°C | -1.5A | 12V | SILICON | SWITCHING | 20V | -600mV | 350mW Ta | -20V | P-Channel | 627pF @ 10V | 100m Ω @ 1.5A, 4.5V | 900mV @ 250μA | 1.5A Ta | 1.8V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMN55ENEX | Nexperia USA Inc. | $0.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-pmn55enex-datasheets-0916.pdf | SC-74, SOT-457 | 4 Weeks | 60V | 560mW Ta 6.25mW Tc | N-Channel | 646pF @ 30V | 60m Ω @ 3.4A, 10V | 2.7V @ 250μA | 4.5A Ta | 19nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RHU003N03T106 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/rohmsemiconductor-rhu003n03t106-datasheets-0904.pdf | 30V | 3A | SC-70, SOT-323 | Lead Free | 3 | 7 Weeks | 800mOhm | 3 | yes | EAR99 | No | e1 | TIN SILVER COPPER | DUAL | GULL WING | 260 | 3 | Single | 10 | 200mW | 1 | FET General Purpose Power | 7 ns | 6ns | 6 ns | 9 ns | 300mA | 20V | SWITCHING | 200mW Ta | 30V | N-Channel | 20pF @ 10V | 1.2 Ω @ 300mA, 10V | 300mA Ta | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOSS62934 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-236-3, SC-59, SOT-23-3 | 18 Weeks | 100V | 1.4W Ta | N-Channel | 250pF @ 50V | 140m Ω @ 2A, 10V | 2.7V @ 250μA | 2A Ta | 3.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB7NK80ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stb7nk80zt4-datasheets-1247.pdf | 800V | 5.2A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.75mm | 4.6mm | 10.4mm | Lead Free | 2 | 12 Weeks | No SVHC | 1.8Ohm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 245 | STB7N | 4 | Single | 30 | 125W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 12ns | 20 ns | 45 ns | 5.2A | 30V | SILICON | SWITCHING | 3.75V | 125W Tc | 20.8A | 800V | N-Channel | 1138pF @ 25V | 1.8 Ω @ 2.6A, 10V | 4.5V @ 100μA | 5.2A Tc | 56nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7S1R0-40HJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk7s1r040hj-datasheets-0608.pdf | SOT-1235 | 12 Weeks | 40V | 375W Ta | N-Channel | 10322pF @ 25V | 1m Ω @ 25A, 10V | 3.6V @ 1mA | 325A Ta | 137nC @ 10V | 10V | +20V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18531Q5AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 16 Weeks | 3.5mOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD18531 | Single | NOT SPECIFIED | 1 | 4.4 ns | 7.8ns | 2.7 ns | 20 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 3.1W Ta 156W Tc | 19A | 400A | 14 pF | 224 mJ | N-Channel | 3840pF @ 30V | 4.6m Ω @ 22A, 10V | 2.3V @ 250μA | 100A Ta | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| STL40N75LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl40n75lf3-datasheets-0560.pdf | 8-PowerVDFN | Lead Free | 5 | 42 Weeks | 16MOhm | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | DUAL | FLAT | STL40 | 62W | 1 | FET General Purpose Powers | R-PDSO-F5 | 12 ns | 25ns | 3 ns | 25 ns | 40A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 75W Tc | 75V | N-Channel | 1300pF @ 25V | 19m Ω @ 20A, 10V | 1V @ 250μA | 40A Tc | 12nC @ 5V | 5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3103PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irl3103pbf-datasheets-0667.pdf | 30V | 64A | TO-220-3 | 10.5156mm | 15.24mm | 4.69mm | Contains Lead, Lead Free | 3 | 14 Weeks | No SVHC | 12MOhm | 3 | 2.54mm | EAR99 | HIGH RELIABILITY, AVALANCHE RATED | No | Single | 83W | 1 | FET General Purpose Power | 8.9 ns | 120ns | 9.1 ns | 14 ns | 64A | 16V | 30V | SILICON | DRAIN | SWITCHING | 1V | 94W Tc | TO-220AB | 56A | 220A | 30V | N-Channel | 1650pF @ 25V | 1 V | 12m Ω @ 34A, 10V | 1V @ 250μA | 64A Tc | 33nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||
| BUK761R7-40E,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk761r740e118-datasheets-0583.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Brass | 2 | 6 Weeks | 3 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 35 ns | 49ns | 52 ns | 87 ns | 120A | 20V | 40V | DRAIN | SWITCHING | 18 AWG | 16 AWG | 324W Tc | Gold, Tin | 40V | N-Channel | 9700pF @ 25V | 1.6m Ω @ 25A, 10V | 4V @ 1mA | 120A Tc | 118nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJQ466E-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqjq466et1ge3-datasheets-0617.pdf | 8-PowerTDFN | 2.03mm | 14 Weeks | C14-0891-SINGLE | 1 | 150W | 175°C | PowerPAK® 8 x 8 | 24 ns | 47 ns | 200A | 20V | 60V | 150W Tc | 1.7mOhm | 60V | N-Channel | 10210pF @ 25V | 1.9mOhm @ 10A, 10V | 3.5V @ 250μA | 200A Tc | 180nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF4LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ K5 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stf4ln80k5-datasheets-0707.pdf | TO-220-3 Full Pack | 17 Weeks | ACTIVE (Last Updated: 8 months ago) | STF4 | 800V | 20W Tc | N-Channel | 122pF @ 100V | 2.6 Ω @ 1A, 10V | 5V @ 100μA | 3A Tc | 3.7nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5826NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nvtfs5826nltag-datasheets-0710.pdf | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | No SVHC | 8 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | Tin | No | e3 | Halogen Free | YES | 3.2W | DUAL | FLAT | 8 | Single | 22W | 1 | FET General Purpose Power | S-PDSO-F5 | 850pF | 9 ns | 29ns | 21 ns | 14 ns | 7.6A | 20V | DRAIN | N-CHANNEL | 60V | METAL-OXIDE SEMICONDUCTOR | 2.5V | 20A | 24mOhm | 20 mJ | 60V | 24 mΩ | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4401EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq4401eyt1ge3-datasheets-0637.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | 12 Weeks | 506.605978mg | Unknown | 8 | Tin | No | 1 | Single | 1.8W | 1 | 8-SO | 4.25nF | 58 ns | 76ns | 44 ns | 67 ns | 17.3A | 20V | 40V | -2V | 7.14W Tc | 11mOhm | -40V | P-Channel | 4250pF @ 20V | -2 V | 14mOhm @ 10.5A, 10V | 2.5V @ 250μA | 17.3A Tc | 115nC @ 10V | 14 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF630PBF | Vishay Siliconix | $0.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irf630pbf-datasheets-0717.pdf | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 400mOhm | 3 | No | 1 | Single | 74W | 1 | TO-220AB | 800pF | 9.4 ns | 28ns | 20 ns | 39 ns | 9A | 20V | 200V | 4V | 74W Tc | 400mOhm | 200V | N-Channel | 800pF @ 25V | 400mOhm @ 5.4A, 10V | 4V @ 250μA | 9A Tc | 43nC @ 10V | 400 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMP32D5LFA-7B | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmp32d5lfa7b-datasheets-0729.pdf | 3-XFDFN | 2 | 15 Weeks | 3 | EAR99 | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | SINGLE | NO LEAD | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-N2 | 300mA | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 360mW Ta | P-Channel | 40.9pF @ 15V | 1.5 Ω @ 200mA, 4.5V | 1.2V @ 250μA | 300mA Ta | 0.7nC @ 4.5V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J66MFV,L3F | Toshiba Semiconductor and Storage | $0.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | SOT-723 | 12 Weeks | 20V | 150mW Ta | P-Channel | 100pF @ 10V | 390m Ω @ 800mA, 4.5V | 1V @ 1mA | 800mA Ta | 1.6nC @ 4.5V | 1.2V 4.5V | +6V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD2NC45-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -65°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2nc451-datasheets-0734.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | STD2N | 3 | Single | 30 | 30W | 1 | FET General Purpose Power | 6.7 ns | 4ns | 12 ns | 8.5 ns | 1.5A | 30V | 450V | SILICON | SWITCHING | 30W Tc | 6A | 25 mJ | 450V | N-Channel | 160pF @ 25V | 3 V | 4.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 1.5A Tc | 7nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34NPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/infineontechnologies-irlz34npbf-datasheets-0598.pdf | 55V | 30A | TO-220-3 | 10.5156mm | 8.77mm | 4.69mm | Lead Free | 3 | 12 Weeks | No SVHC | 35mOhm | 3 | 2.54mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | 250 | Single | 30 | 56W | 1 | 8.9 ns | 100ns | 29 ns | 21 ns | 30A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 68W Tc | TO-220AB | 110 ns | 55V | N-Channel | 880pF @ 25V | 2 V | 35m Ω @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||
| BUK9606-75B,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-buk960675b118-datasheets-0629.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e3 | YES | GULL WING | 3 | Single | 300W | 1 | R-PSSO-G2 | 68 ns | 144ns | 116 ns | 273 ns | 75A | 15V | 75V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0066Ohm | 852 mJ | 75V | N-Channel | 11693pF @ 25V | 5.5m Ω @ 25A, 10V | 2V @ 1mA | 75A Tc | 95nC @ 5V | 5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQPF10N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqpf10n20c-datasheets-0642.pdf | 200V | 9.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 11 ns | 92ns | 72 ns | 70 ns | 9.5A | 30V | SILICON | ISOLATED | SWITCHING | 4V | 38W Tc | TO-220AB | 200V | N-Channel | 510pF @ 25V | 360m Ω @ 4.75A, 10V | 4V @ 250μA | 9.5A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL100N8F7 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl100n8f7-datasheets-0354.pdf | 8-PowerVDFN | Lead Free | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | not_compliant | e3 | Matte Tin (Sn) | 260 | STL100 | NOT SPECIFIED | 100A | 80V | 4.8W Ta 120W Tc | N-Channel | 3435pF @ 40V | 6.1m Ω @ 10A, 10V | 4.5V @ 250μA | 100A Tc | 46.8nC @ 10V | 10V | ±20V |
