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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Surface Mount | Max Power Dissipation | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Polarity/Channel Type | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | FET Technology | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIR122DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir122dpt1re3-datasheets-3093.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5.2W Ta 65.7W Tc | N-Channel | 1950pF @ 40V | 7.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.7A Ta 59.6A Tc | 44nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4C59NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-ntmfs4c59nt1g-datasheets-3308.pdf | 8-PowerTDFN | 16 Weeks | 8 | 52A | 30V | 760mW Ta | N-Channel | 1252pF @ 15V | 5.8m Ω @ 30A, 10V | 2.1V @ 250μA | 9A Ta 52A Tc | 22.2nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR124DP-T1-RE3 | Vishay Siliconix | $0.86 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir124dpt1re3-datasheets-3182.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 62.5W Tc | N-Channel | 1666pF @ 40V | 8.4mOhm @ 10A, 10V | 3.8V @ 250μA | 16.1A Ta 56.8A Tc | 40nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SSM3J334R,LF | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2004 | SOT-23-3 Flat Leads | 16 Weeks | 3 | unknown | Single | 1W | 1 | 4A | 20V | 30V | 1W Ta | -30V | P-Channel | 280pF @ 15V | 71m Ω @ 3A, 10V | 2V @ 100μA | 4A Ta | 5.9nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC640P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc640p-datasheets-2774.pdf | -20V | -4.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 53mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 12 ns | 9ns | 13 ns | 24 ns | 4.5mA | 12V | SILICON | SWITCHING | 20V | -1V | 1.6W Ta | -20V | P-Channel | 890pF @ 10V | -1 V | 53m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 13nC @ 4.5V | 2.5V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||
| MCH3475-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-mch3475tle-datasheets-2549.pdf | 3-SMD, Flat Lead | 2mm | 850μm | 1.6mm | Lead Free | 7 Weeks | 180mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 3 | Single | 800mW | FET General Purpose Powers | 3.4 ns | 3.6ns | 4 ns | 10.5 ns | 1.8A | 20V | 800mW Ta | 30V | N-Channel | 88pF @ 10V | 180m Ω @ 900mA, 10V | 1.8A Ta | 2nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17313Q2Q1T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 6 | NRND (Last Updated: 3 days ago) | yes | 750μm | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD17313 | 1 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.4W Ta 17W Tc | 5A | 57A | 0.042Ohm | 17 pF | 18 mJ | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Ta | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||||||||||||||||
| SISS08DN-T1-GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss08dnt1ge3-datasheets-3236.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 3670pF @ 12.5V | 1.23mOhm @ 15A, 10V | 2.2V @ 250μA | 53.9A Ta 195.5A Tc | 82nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ186DP-T1-GE3 | Vishay Siliconix | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij186dpt1ge3-datasheets-3238.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 57W Tc | N-Channel | 1710pF @ 30V | 4.5mOhm @ 15A, 10V | 3.6V @ 250μA | 23A Ta 79.4A Tc | 37nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS12DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss12dnt1ge3-datasheets-3246.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 40V | 5W Ta 65.7W Tc | N-Channel | 4270pF @ 20V | 1.98mOhm @ 10A, 10V | 2.4V @ 250μA | 37.5A Ta 60A Tc | 89nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H010SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmt10h010sps13-datasheets-3255.pdf | 8-PowerTDFN | 22 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 1.2W Ta | N-Channel | 4.468nF @ 50V | 8.8m Ω @ 13A, 10V | 4V @ 250μA | 10.7A Ta 113A Tc | 56.4nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPC100N04S52R8ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipc100n04s52r8atma1-datasheets-3262.pdf | 8-PowerTDFN | 3 | 16 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 75W Tc | 100A | 400A | 0.0034Ohm | 66 mJ | N-Channel | 2600pF @ 25V | 2.8m Ω @ 50A, 10V | 3.4V @ 30μA | 100A Tc | 45nC @ 10V | 7V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8047-H(T2L1,VM | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 1.6W Ta 45W Tc | N-Channel | 3365pF @ 10V | 7.3m Ω @ 16A, 10V | 2.3V @ 500μA | 32A Ta | 43nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS61DN-T1-GE3 | Vishay Siliconix | $0.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss61dnt1ge3-datasheets-3034.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 20V | 5W Ta 65.8W Tc | P-Channel | 8740pF @ 10V | 3.5mOhm @ 15A, 4.5V | 900mV @ 250μA | 30.9A Ta 111.9A Tc | 231nC @ 10V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3469DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si3469dvt1e3-datasheets-3277.pdf | SOT-23-6 Thin, TSOT-23-6 | 6 | 14 Weeks | 19.986414mg | Unknown | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 1.14W | 1 | Other Transistors | 10 ns | 12ns | 35 ns | 50 ns | -6.7A | 20V | SILICON | SWITCHING | -1V | 1.14W Ta | 5A | 0.03Ohm | -20V | P-Channel | -1 V | 30m Ω @ 6.7A, 10V | 3V @ 250μA | 5A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PMXB65UPEZ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/nexperiausainc-pmxb65upez-datasheets-2949.pdf | 3-XDFN Exposed Pad | 4 Weeks | DFN1010D-3 | 634pF | 3.2A | 12V | 317mW Ta 8.33W Tc | 59mOhm | P-Channel | 634pF @ 6V | 72mOhm @ 3.2A, 4.5V | 1V @ 250μA | 3.2A Ta | 12nC @ 4.5V | 72 mΩ | 1.2V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8026S | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdmc8026s-datasheets-3138.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | 5 | 23 Weeks | 165.33333mg | No SVHC | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 36W | 1 | FET General Purpose Power | S-PDSO-N5 | 11 ns | 5ns | 4 ns | 30 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 2.4W Ta 36W Tc | 0.0044Ohm | 66 mJ | 30V | N-Channel | 3165pF @ 15V | 4.4m Ω @ 19A, 10V | 3V @ 1mA | 19A Ta 21A Tc | 52nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| BUK6210-55C,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/nexperiausainc-buk621055c118-datasheets-2895.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 3 | Tin | not_compliant | 3 | Single | 128W | 16 ns | 45ns | 74 ns | 130 ns | 78A | 20V | 55V | 128W Tc | 55V | N-Channel | 4000pF @ 25V | 9.6m Ω @ 15A, 10V | 2.8V @ 1mA | 78A Tc | 63nC @ 10V | 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS67DN-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss67dnt1ge3-datasheets-3158.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK7R7P10PL,RQ | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN95R2K0P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn95r2k0p7atma1-datasheets-3101.pdf | TO-261-3 | 18 Weeks | 950V | 7W Tc | N-Channel | 330pF @ 400V | 2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4A Tc | 10nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCU20N15-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | 12 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RAL035P01TCR | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/rohmsemiconductor-ral035p01tcr-datasheets-2966.pdf | 6-SMD, Flat Leads | Lead Free | 6 | 20 Weeks | 6 | yes | EAR99 | not_compliant | DUAL | NOT SPECIFIED | 6 | NOT SPECIFIED | 1 | Other Transistors | Not Qualified | 3.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 1W Ta | 0.042Ohm | P-Channel | 2700pF @ 6V | 42m Ω @ 3.5A, 4.5V | 1V @ 1mA | 3.5A Ta | 22nC @ 4.5V | 1.5V 4.5V | -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ6E045BNTCR | ROHM Semiconductor | $0.44 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Cut Tape (CT) | 1 (Unlimited) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | 6 | 10 Weeks | EAR99 | not_compliant | 1.25W | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G6 | 330pF | 4.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | N-CHANNEL | 30V | METAL-OXIDE SEMICONDUCTOR | 21mOhm | 30 mΩ | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA66DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sira66dpt1ge3-datasheets-3047.pdf | PowerPAK® SO-8 | 14 Weeks | 1.9mOhm | 8 | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 62.5W Tc | N-Channel | 2.3m Ω @ 15A, 10V | 2.2V @ 1mA | 50A Tc | 66nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RJU002N06FRAT106 | ROHM Semiconductor | $0.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | SC-70, SOT-323 | 3 | 16 Weeks | Unknown | 3 | EAR99 | not_compliant | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 200mA | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 60V | 60V | 1.5V | 200mW Ta | 0.2A | N-Channel | 18pF @ 10V | 2.3 Ω @ 200mA, 4.5V | 1.5V @ 1mA | 200mA Ta | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIS106DN-T1-GE3 | Vishay Siliconix | $0.85 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis106dnt1ge3-datasheets-3107.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 60V | 3.2W Ta 24W Tc | N-Channel | 540pF @ 30V | 18.5mOhm @ 4A, 10V | 4V @ 250μA | 9.8A Ta 16A Tc | 13.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR167DP-T1-GE3 | Vishay Siliconix | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir167dpt1ge3-datasheets-3095.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 65.8W Tc | P-Channel | 4380pF @ 15V | 5.5mOhm @ 15A, 10V | 2.5V @ 250μA | 60A Tc | 111nC @ 10V | 4.5V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV100XPEAR | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv100xpear-datasheets-3016.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | AEC-Q101; IEC-60134 | YES | DUAL | GULL WING | 3 | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 463mW Ta 1.9W Tc | TO-236AB | 2.4A | 0.21Ohm | P-Channel | 386pF @ 10V | 128m Ω @ 2.4A, 4.5V | 1.25V @ 250μA | 2.4A Ta | 6nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH2R104PL,LQ | Toshiba Semiconductor and Storage | $1.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 830mW Ta 116W Tc | N-Channel | 6230pF @ 20V | 2.1m Ω @ 50A, 10V | 2.4V @ 500μA | 100A Tc | 78nC @ 10V | 4.5V 10V | ±20V |
