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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SI4894BDY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4894bdyt1e3-datasheets-3605.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 11mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 13 ns | 10ns | 10 ns | 33 ns | 12A | 20V | 30V | SILICON | 1.4W Ta | N-Channel | 1580pF @ 15V | 3 V | 11m Ω @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| PSMN1R7-40YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 194W Ta | N-Channel | 7966pF @ 20V | 1.8m Ω @ 25A, 10V | 2.05V @ 1mA | 200A Ta | 109nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4835NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfs4835nt1g-datasheets-3597.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 260 | 5 | Single | 40 | 62.5W | 1 | FET General Purpose Power | 16 ns | 31ns | 13 ns | 22 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 890mW Ta 62.5W Tc | 208A | 392 mJ | 30V | N-Channel | 3100pF @ 12V | 3.5m Ω @ 30A, 10V | 2.5V @ 250μA | 13A Ta 130A Tc | 52nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPN1110ENH,L1Q | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 8-TSON Advance (3.3x3.3) | 600pF | 14 ns | 5.2ns | 4.5 ns | 19 ns | 7.2A | 20V | 200V | 700mW Ta 39W Tc | 96mOhm | N-Channel | 600pF @ 100V | 114mOhm @ 3.6A, 10V | 4V @ 200μA | 7.2A Ta | 7nC @ 10V | 114 mΩ | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN80R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn80r750p7atma1-datasheets-3594.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 7.2W Tc | 0.75Ohm | N-Channel | 460pF @ 500V | 750m Ω @ 2.7A, 10V | 3.5V @ 140μA | 7A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJA52ADP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija52adpt1ge3-datasheets-3637.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira52dpt1ge3-datasheets-3644.pdf | PowerPAK® SO-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 60A | 40V | 48W Tc | N-Channel | 7150pF @ 20V | 1.7m Ω @ 15A, 10V | 2.4V @ 250μA | 60A Tc | 150nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS30DN-T1-GE3 | Vishay Siliconix | $1.09 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss30dnt1ge3-datasheets-3253.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 80V | 4.8W Ta 57W Tc | N-Channel | 1666pF @ 10V | 8.25mOhm @ 10A, 10V | 3.8V @ 250μA | 15.9A Ta 54.7A Tc | 40nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R204PB,L1Q | Toshiba Semiconductor and Storage | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 40V | 960mW Ta 132W Tc | N-Channel | 5855pF @ 20V | 1.2m Ω @ 50A, 10V | 3V @ 500μA | 150A Tc | 62nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS92DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss92dnt1ge3-datasheets-3334.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 250V | 5.1W Ta 65.8W Tc | N-Channel | 350pF @ 125V | 173mOhm @ 3.6A, 10V | 4V @ 250μA | 3.4A Ta 12.3A Tc | 16nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD5N60TM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcd5n60tmws-datasheets-3372.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | 260.37mg | 3 | ACTIVE (Last Updated: 4 days ago) | yes | Tin | No | FCD5N60 | Single | 54W | 1 | FET General Purpose Power | 12 ns | 40ns | 22 ns | 47 ns | 4.6A | 30V | 54W Tc | 600V | N-Channel | 600pF @ 25V | 950m Ω @ 2.3A, 10V | 5V @ 250μA | 4.6A Tc | 16nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMPH4015SSS-13 | Diodes Incorporated | $0.99 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph4015sss13-datasheets-3341.pdf | 8-SOIC (0.154, 3.90mm Width) | 15 Weeks | EAR99 | e3 | Matte Tin (Sn) | 260 | 30 | 40V | 1.8W | P-Channel | 4234pF @ 20V | 11m Ω @ 9.8A, 10V | 2.5V @ 250μA | 11.4A Ta | 91nC @ 10V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS8820 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms8820-datasheets-3285.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 18 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 78W | 1 | FET General Purpose Power | R-PDSO-F5 | 14 ns | 16ns | 13 ns | 41 ns | 116A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 78W Tc | MO-240AA | 0.002Ohm | 294 mJ | 30V | N-Channel | 5315pF @ 15V | 2m Ω @ 28A, 10V | 2.5V @ 250μA | 28A Ta 116A Tc | 88nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| BSC018NE2LSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-bsc018ne2lsatma1-datasheets-3345.pdf | 8-PowerTDFN | Contains Lead | 5 | 26 Weeks | 8 | no | EAR99 | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 69W | 1 | Not Qualified | R-PDSO-F5 | 4.4ns | 29A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5W Ta 69W Tc | 400A | 0.0023Ohm | N-Channel | 2800pF @ 12V | 1.8m Ω @ 30A, 10V | 2V @ 250μA | 29A Ta 100A Tc | 39nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSP135H6433XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-bsp135h6327xtsa1-datasheets-6832.pdf | TO-261-4, TO-261AA | 4 | 10 Weeks | 4 | Tin | AEC-Q101 | DUAL | GULL WING | Single | 1 | 5.6ns | 182 ns | 28 ns | 20mA | 20V | SILICON | DRAIN | 600V | 600V | 1.8W Ta | 0.12A | N-Channel | 146pF @ 25V | 45 Ω @ 120mA, 10V | 1V @ 94μA | 120mA Ta | 4.9nC @ 5V | Depletion Mode | 0V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMTH43M8LPSQ-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/diodesincorporated-dmth43m8lpsq13-datasheets-3419.pdf | 8-PowerTDFN | 1.15mm | 18 Weeks | EAR99 | PowerDI5060-8 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | NOT SPECIFIED | 2.7W | 175°C | 5.2 ns | 23.5 ns | 22A | 20V | 2.7W Ta | 40V | N-Channel | 3.367nF @ 20V | 3.3m Ω @ 20A, 10V | 2.5V @ 250μA | 22A Ta 100A Tc | 49nC @ 10V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF6712STRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irf6712strpbf-datasheets-3431.pdf | DirectFET™ Isometric SQ | 4.826mm | 506μm | 3.95mm | Lead Free | 2 | 12 Weeks | 4.9MOhm | 6 | EAR99 | No | e1 | Tin/Silver/Copper (Sn/Ag/Cu) | BOTTOM | 36W | 1 | FET General Purpose Power | R-XBCC-N2 | 11 ns | 40ns | 12 ns | 14 ns | 17A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.2W Ta 36W Tc | 25V | N-Channel | 1570pF @ 13V | 4.9m Ω @ 17A, 10V | 2.4V @ 50μA | 17A Ta 68A Tc | 18nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| SIRA58ADP-T1-RE3 | Vishay Siliconix | $1.14 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira58adpt1re3-datasheets-3365.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 5W Ta 56.8W Tc | N-Channel | 3030pF @ 20V | 2.65mOhm @ 15A, 10V | 2.4V @ 250μA | 32.3A Ta 109A Tc | 61nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R0-40YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 166W Ta | N-Channel | 6581pF @ 20V | 2.1m Ω @ 25A, 10V | 2.05V @ 1mA | 180A Ta | 92nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFD6H852NLWFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvmfd6h852nlt1g-datasheets-8362.pdf | 8-PowerTDFN | 48 Weeks | yes | 80V | 3.2W Ta 38W Tc | N-Channel | 521pF @ 40V | 25.5m Ω @ 10A, 10V | 2V @ 26μA | 7A Ta 25A Tc | 10nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RD3P100SNTL1 | ROHM Semiconductor | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 20W Tc | 10A | 20A | 0.147Ohm | N-Channel | 700pF @ 25V | 133m Ω @ 5A, 10V | 2.5V @ 1mA | 10A Ta | 18nC @ 10V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN011-100YSFX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-psmn011100ysfx-datasheets-3481.pdf | SC-100, SOT-669 | 12 Weeks | 100V | 152W Ta | N-Channel | 2.258nF @ 50V | 10.9m Ω @ 20A, 10V | 4V @ 1mA | 79.5A Ta | 34.3nC @ 10V | 7V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PMV65UNER | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-pmv65uner-datasheets-3191.pdf | TO-236-3, SC-59, SOT-23-3 | 3 | 4 Weeks | IEC-60134 | YES | DUAL | GULL WING | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 20V | 20V | 490mW Ta | TO-236AB | 2.8A | 0.073Ohm | N-Channel | 291pF @ 10V | 73m Ω @ 2.8A, 4.5V | 1V @ 250μA | 2.8A Ta | 6nC @ 10V | 1.8V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TK6P65W,RQ | Toshiba Semiconductor and Storage | $1.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DTMOSIV | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2015 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 16 Weeks | 5.8A | 650V | 60W Tc | N-Channel | 390pF @ 300V | 1.05 Ω @ 2.9A, 10V | 3.5V @ 180μA | 5.8A Ta | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN2R2-40YSDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 166W Ta | N-Channel | 5130pF @ 20V | 2.2m Ω @ 25A, 10V | 3.6V @ 1mA | 180A Ta | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC640P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fdc640p-datasheets-2774.pdf | -20V | -4.5A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 10 Weeks | 36mg | No SVHC | 53mOhm | 6 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 12 ns | 9ns | 13 ns | 24 ns | 4.5mA | 12V | SILICON | SWITCHING | 20V | -1V | 1.6W Ta | -20V | P-Channel | 890pF @ 10V | -1 V | 53m Ω @ 4.5A, 4.5V | 1.5V @ 250μA | 4.5A Ta | 13nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||
| MCH3475-TL-E | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2007 | /files/onsemiconductor-mch3475tle-datasheets-2549.pdf | 3-SMD, Flat Lead | 2mm | 850μm | 1.6mm | Lead Free | 7 Weeks | 180mOhm | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | YES | 3 | Single | 800mW | FET General Purpose Powers | 3.4 ns | 3.6ns | 4 ns | 10.5 ns | 1.8A | 20V | 800mW Ta | 30V | N-Channel | 88pF @ 10V | 180m Ω @ 900mA, 10V | 1.8A Ta | 2nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17313Q2Q1T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | 6 | NRND (Last Updated: 3 days ago) | yes | 750μm | e3 | Matte Tin (Sn) | DUAL | NO LEAD | CSD17313 | 1 | 5A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 2.4W Ta 17W Tc | 5A | 57A | 0.042Ohm | 17 pF | 18 mJ | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Ta | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS08DN-T1-GE3 | Vishay Siliconix | $0.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss08dnt1ge3-datasheets-3236.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 3670pF @ 12.5V | 1.23mOhm @ 15A, 10V | 2.2V @ 250μA | 53.9A Ta 195.5A Tc | 82nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJ186DP-T1-GE3 | Vishay Siliconix | $1.13 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sij186dpt1ge3-datasheets-3238.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 57W Tc | N-Channel | 1710pF @ 30V | 4.5mOhm @ 15A, 10V | 3.6V @ 250μA | 23A Ta 79.4A Tc | 37nC @ 10V | 6V 10V | ±20V |
