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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Reverse Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQR40030ER_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-4, DPak (3 Leads + Tab) | 14 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4852NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntmfs4852nt1g-datasheets-3899.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 2.1MOhm | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 2.31W | 1 | FET General Purpose Power | 21.1 ns | 25.6ns | 12 ns | 35 ns | 155A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 900mW Ta 86.2W Tc | 360 mJ | 30V | N-Channel | 4970pF @ 12V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 155A Tc | 71.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RD3G500GNTL | ROHM Semiconductor | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3g500gntl-datasheets-3824.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 35W Tc | 50A | 100A | 0.0063Ohm | 94 mJ | N-Channel | 22800pF @ 20V | 4.9m Ω @ 50A, 10V | 2.5V @ 1mA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA52ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira52adpt1re3-datasheets-3700.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH112DN-T1-GE3 | Vishay Siliconix | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -50°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish112dnt1ge3-datasheets-3738.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 1.5W Tc | N-Channel | 2610pF @ 15V | 7.5mOhm @ 17.8A, 10V | 1.5V @ 250μA | 11.3A Tc | 27nC @ 4.5V | 4.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVMFS6D1N08HT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | Non-RoHS Compliant | /files/onsemiconductor-nvmfs6d1n08ht1g-datasheets-3741.pdf | 8-PowerTDFN, 5 Leads | 4 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R1K4CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipsa70r1k4ceakma1-datasheets-3745.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 53W Tc | 8.3A | 26 mJ | N-Channel | 225pF @ 100V | 1.4 Ω @ 1A, 10V | 3.5V @ 100μA | 5.4A Tc | 10.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD8444 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8444-datasheets-3754.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | No SVHC | 5.2MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | 50A | e3 | Tin (Sn) | 40V | GULL WING | Single | 153W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 78ns | 15 ns | 48 ns | 145A | 20V | 40V | SILICON | DRAIN | SWITCHING | 2.5V | 153W Tc | TO-252AA | 51 ns | 40V | N-Channel | 6195pF @ 25V | 2.5 V | 5.2m Ω @ 50A, 10V | 4V @ 250μA | 145A Tc | 116nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIS184DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sis184dnt1ge3-datasheets-3732.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S | 60V | 3.7W Ta 52W Tc | N-Channel | 1490pF @ 30V | 5.8mOhm @ 10A, 10V | 3.4V @ 250μA | 17.4A Ta 65.3A Tc | 32nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50034E_GE3 | Vishay Siliconix | $1.29 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50034ege3-datasheets-3780.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | TO-252AA | 60V | 107W Tc | N-Channel | 6600pF @ 25V | 3.9mOhm @ 20A, 10V | 3.5V @ 250μA | 100A Tc | 90nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ4153EY-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | /files/vishaysiliconix-sq4153eyt1ge3-datasheets-3793.pdf | 8-SOIC (0.154, 3.90mm Width) | 1.75mm | 8 | 12 Weeks | EAR99 | unknown | YES | DUAL | GULL WING | NOT SPECIFIED | 1 | NOT SPECIFIED | 7.1W | 1 | 175°C | R-PDSO-G8 | 31 ns | 310 ns | -25A | 8V | SILICON | SINGLE WITH BUILT-IN DIODE | 12V | 7.1W Tc | 0.00832Ohm | 3600 pF | -12V | P-Channel | 11000pF @ 6V | 8.32m Ω @ 14A, 4.5V | 900mV @ 250μA | 25A Tc | 151nC @ 4.5V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||||||||||||||||||
| SQD07N25-350H_GE3 | Vishay Siliconix | $1.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd07n25350hge3-datasheets-3752.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | TO-252AA | 250V | 71W Tc | N-Channel | 1205pF @ 25V | 350mOhm @ 10A, 10V | 3.5V @ 250μA | 7A Tc | 29nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD25N06-22L_GE3 | Vishay Siliconix | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd25n0622lge3-datasheets-3819.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 12 Weeks | 1.437803g | Unknown | 22mOhm | 3 | No | 1 | Single | 62W | 1 | TO-252, (D-Pak) | 1.975nF | 8 ns | 10ns | 6 ns | 24 ns | 25A | 20V | 60V | 2V | 62W Tc | 22mOhm | 60V | N-Channel | 1975pF @ 25V | 22mOhm @ 20A, 10V | 2.5V @ 250μA | 25A Tc | 50nC @ 10V | 22 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TPH8R008NH,L1Q | Toshiba Semiconductor and Storage | $15.93 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 34A | 80V | 1.6W Ta 61W Tc | N-Channel | 3000pF @ 40V | 8m Ω @ 17A, 10V | 4V @ 500μA | 34A Tc | 35nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STL8NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl8nh3ll-datasheets-3814.pdf | 30V | 8A | 8-PowerVDFN | 5mm | 810μm | 6mm | Lead Free | 9 | No SVHC | 15mOhm | 8 | EAR99 | LOW THRESHOLD | e3 | Matte Tin (Sn) - annealed | QUAD | NO LEAD | 260 | STL8 | 9 | 30 | 50W | 1 | FET General Purpose Power | Not Qualified | S-XQFP-N9 | 15 ns | 32ns | 8.5 ns | 18 ns | 8A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.5V | 2W Ta 50W Tc | 8A | 32A | 30V | N-Channel | 965pF @ 25V | 15m Ω @ 4A, 10V | 2.5V @ 250μA | 8A Tc | 12nC @ 4.5V | 4.5V 10V | ±18V | ||||||||||||||||||||||||||||||||||
| SQJ403EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sqj403ept1ge3-datasheets-3682.pdf | PowerPAK® SO-8 | 12 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 68W Tc | P-Channel | 4500pF @ 15V | 8.5m Ω @ 10A, 10V | 2.5V @ 250μA | 30A Tc | 109nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR188DP-T1-RE3 | Vishay Siliconix | $1.22 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir188dpt1re3-datasheets-3806.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5W Ta 65.7W Tc | N-Channel | 1920pF @ 30V | 3.85mOhm @ 10A, 10V | 3.6V @ 250μA | 25.5A Ta 60A Tc | 44nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA62DP-T1-RE3 | Vishay Siliconix | $0.52 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira62dpt1re3-datasheets-3698.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5.2W Ta 65.7W Tc | N-Channel | 4460pF @ 15V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 51.4A Ta 80A Tc | 93nC @ 10V | 4.5V 10V | +16V, -12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR97N06-6M3L_GE3 | Vishay Siliconix | $16.23 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqr97n066m3lge3-datasheets-3737.pdf | TO-252-4, DPak (3 Leads + Tab) | 12 Weeks | TO-252 (DPAK) | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7230DN-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-si7230dnt1e3-datasheets-3689.pdf | PowerPAK® 1212-8 | 3.3mm | 1.04mm | 3.3mm | Lead Free | 5 | 14 Weeks | 12mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 1 | FET General Purpose Power | S-XDSO-C5 | 13 ns | 10ns | 10 ns | 33 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1.5W Ta | 9A | 40A | 30V | N-Channel | 12m Ω @ 14A, 10V | 3V @ 250μA | 9A Ta | 20nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| AO6415 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | SC-74, SOT-457 | 6 | 1.25W | 1 | 3.3A | 12V | 20V | 1.25W Ta | P-Channel | 620pF @ 10V | 75m Ω @ 3.3A, 10V | 1.4V @ 250μA | 3.3A Ta | 6nC @ 4.5V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7117DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7117dnt1e3-datasheets-3206.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 7 ns | 11ns | 11 ns | 16 ns | 1.1A | 20V | SILICON | DRAIN | SWITCHING | 150V | 3.2W Ta 12.5W Tc | 2.2A | -150V | P-Channel | 510pF @ 25V | 1.2 Ω @ 500mA, 10V | 4.5V @ 250μA | 2.17A Tc | 12nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| TPH1R405PL,L1Q | Toshiba Semiconductor and Storage | $1.30 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 45V | 960mW Ta 132W Tc | N-Channel | 6300pF @ 22.5V | 1.4m Ω @ 50A, 10V | 2.4V @ 500μA | 120A Tc | 74nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN1R9-40YSDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 194W Ta | N-Channel | 6198pF @ 20V | 1.9m Ω @ 25A, 10V | 3.6V @ 1mA | 200A Ta | 80nC @ 10V | Schottky Diode (Body) | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4894BDY-T1-E3 | Vishay Siliconix | $0.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4894bdyt1e3-datasheets-3605.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.55mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | No SVHC | 11mOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 1.4W | 1 | FET General Purpose Powers | 13 ns | 10ns | 10 ns | 33 ns | 12A | 20V | 30V | SILICON | 1.4W Ta | N-Channel | 1580pF @ 15V | 3 V | 11m Ω @ 12A, 10V | 3V @ 250μA | 8.9A Ta | 38nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| PSMN1R7-40YLDX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 194W Ta | N-Channel | 7966pF @ 20V | 1.8m Ω @ 25A, 10V | 2.05V @ 1mA | 200A Ta | 109nC @ 10V | Schottky Diode (Body) | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4835NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-ntmfs4835nt1g-datasheets-3597.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | 5 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | YES | DUAL | FLAT | 260 | 5 | Single | 40 | 62.5W | 1 | FET General Purpose Power | 16 ns | 31ns | 13 ns | 22 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 890mW Ta 62.5W Tc | 208A | 392 mJ | 30V | N-Channel | 3100pF @ 12V | 3.5m Ω @ 30A, 10V | 2.5V @ 250μA | 13A Ta 130A Tc | 52nC @ 11.5V | 4.5V 11.5V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPN1110ENH,L1Q | Toshiba Semiconductor and Storage | $1.06 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 8 | 1 | 8-TSON Advance (3.3x3.3) | 600pF | 14 ns | 5.2ns | 4.5 ns | 19 ns | 7.2A | 20V | 200V | 700mW Ta 39W Tc | 96mOhm | N-Channel | 600pF @ 100V | 114mOhm @ 3.6A, 10V | 4V @ 200μA | 7.2A Ta | 7nC @ 10V | 114 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPN80R750P7ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipn80r750p7atma1-datasheets-3594.pdf | TO-261-3 | 3 | 18 Weeks | EAR99 | YES | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 7.2W Tc | 0.75Ohm | N-Channel | 460pF @ 500V | 750m Ω @ 2.7A, 10V | 3.5V @ 140μA | 7A Tc | 17nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIJA52ADP-T1-GE3 | Vishay Siliconix | $1.16 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sija52adpt1ge3-datasheets-3637.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 40V | 4.8W Ta 48W Tc | N-Channel | 5500pF @ 20V | 1.63mOhm @ 15A, 10V | 2.4V @ 250μA | 41.6A Ta 131A Tc | 100nC @ 10V | 4.5V 10V | +20V, -16V |
