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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| FQPF630 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqpf630-datasheets-4858.pdf | 200V | 6.3A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 4 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 38W | 1 | FET General Purpose Power | 8 ns | 75ns | 64 ns | 47 ns | 6.3A | 25V | SILICON | ISOLATED | SWITCHING | 38W Tc | TO-220AB | 25.2A | 0.4Ohm | 200V | N-Channel | 550pF @ 25V | 400m Ω @ 3.15A, 10V | 4V @ 250μA | 6.3A Tc | 25nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||
| STI55NF03L | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -60°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sti55nf03l-datasheets-4866.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 3 | 12 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STI55N | 3 | NOT SPECIFIED | 1 | FET General Purpose Powers | R-PSIP-T3 | 55A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 80W Tc | 220A | 0.02Ohm | 120 mJ | N-Channel | 1265pF @ 25V | 13m Ω @ 27.5A, 10V | 2.5V @ 250μA | 55A Tc | 27nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| STS5N15F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-sts5n15f3-datasheets-4874.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 57MOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS5N | 8 | 30 | 2.5W | 1 | FET General Purpose Power | 9 ns | 13ns | 20 ns | 46 ns | 5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Tc | 5A | 20A | 300 mJ | 150V | N-Channel | 1300pF @ 25V | 57m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 29nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| SIHD2N80AE-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd2n80aege3-datasheets-4876.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 14 Weeks | D-PAK (TO-252) | 800V | 62.5W Tc | N-Channel | 180pF @ 100V | 2.9Ohm @ 500mA, 10V | 4V @ 250μA | 2.9A Tc | 10.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50P08-28_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | 136W | 1 | TO-252AA | 48A | 20V | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Tin (Sn) | SINGLE | STI6N | 3 | 1 | FET General Purpose Power | 22 ns | 12ns | 20 ns | 49 ns | 5.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 620V | 620V | 3.75V | 90W Tc | 22A | 140 mJ | N-Channel | 875pF @ 50V | 3.75 V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| SIR104DP-T1-RE3 | Vishay Siliconix | $1.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir104dpt1re3-datasheets-4763.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5.4W Ta 100W Tc | N-Channel | 4230pF @ 50V | 6.4mOhm @ 15A, 10V | 3.5V @ 250μA | 18.3A Ta 79A Tc | 84nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR140DP-T1-GE3 | Vishay Siliconix | $2.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr140dpt1ge3-datasheets-4746.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 25V | 6.25W Ta 125W Tc | N-Channel | 8150pF @ 10V | 0.67mOhm @ 20A, 10V | 2.1V @ 250μA | 79A Ta 100A Tc | 170nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU95R2K0P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r2k0p7akma1-datasheets-4810.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 37W Tc | N-Channel | 330pF @ 400V | 2 Ω @ 1.7A, 10V | 3.5V @ 80μA | 4A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF2NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf2nk60z-datasheets-4817.pdf | TO-220-3 Full Pack | Lead Free | 3 | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STF2N | 3 | Single | 20W | 1 | FET General Purpose Power | 8 ns | 30ns | 25 ns | 22 ns | 1.4A | 30V | SILICON | ISOLATED | SWITCHING | 20W Tc | TO-220AB | 5.6A | 8Ohm | 90 mJ | 600V | N-Channel | 170pF @ 25V | 8 Ω @ 700mA, 10V | 4.5V @ 50μA | 1.4A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIHD5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 8 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | TO-252AA | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| STU6N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf6n60m2-datasheets-1503.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 26 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU6N | 1 | Single | 60W | 9.5 ns | 7.4ns | 22.5 ns | 24 ns | 4.5A | 25V | 600V | 60W Tc | 650V | N-Channel | 232pF @ 100V | 1.2 Ω @ 2.25A, 10V | 4V @ 250μA | 4.5A Tc | 13.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||
| STU4N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu4n52k3-datasheets-4742.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | 260 | STU4N | 3 | Single | 45W | 1 | FET General Purpose Power | 8 ns | 7ns | 14 ns | 21 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-220AB | 10A | 110 mJ | 525V | N-Channel | 334pF @ 100V | 2.6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| FCMT299N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcmt299n60-datasheets-4823.pdf | 4-PowerTSFN | 33 Weeks | 449.03225mg | 199mOhm | 4 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | not_compliant | 260 | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 19 ns | 9ns | 7 ns | 51 ns | 12A | 20V | 125W Tc | 600V | N-Channel | 1948pF @ 380V | 299m Ω @ 6A, 10V | 3.5V @ 250μA | 12A Ta | 51nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| SIHD1K4N60E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | E | Surface Mount | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd1k4n60ege3-datasheets-4748.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | TO-252AA | 600V | 63W Tc | N-Channel | 172pF @ 100V | 1.45Ohm @ 500mA, 10V | 5V @ 250μA | 4.2A Tc | 7.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOY66923 | Alpha & Omega Semiconductor Inc. | $0.58 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaSGT™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | 100V | 6.2W Ta 73W Tc | N-Channel | 1725pF @ 50V | 11m Ω @ 20A, 10V | 2.6V @ 250μA | 16.5A Ta 58A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU600N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcu600n65s3r0-datasheets-4755.pdf | TO-251-3 Stub Leads, IPak | 15 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 650V | 54W Tc | N-Channel | 465pF @ 400V | 600m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 11nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR390DP-T1-GE3 | Vishay Siliconix | $1.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr390dpt1ge3-datasheets-4760.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 30V | 6.25W Ta 125W Tc | N-Channel | 10180pF @ 15V | 0.8mOhm @ 20A, 10V | 2V @ 250μA | 69.9A Ta 100A Tc | 153nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM4ND65CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm4nd65ci-datasheets-4765.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 650V | 41.6W Tc | N-Channel | 596pF @ 50V | 2.6 Ω @ 1.2A, 10V | 3.8V @ 250μA | 4A Tc | 16.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IXTY01N100D-TRL | IXYS |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 24 Weeks | 1000V | 1.1W Ta 25W Tc | N-Channel | 100pF @ 25V | 80 Ω @ 50mA, 0V | 4.5V @ 25μA | 400mA Tj | 5.8nC @ 5V | Depletion Mode | 0V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-5M6_GE3 | Vishay Siliconix | $2.89 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50n045m6ge3-datasheets-3962.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | EAR99 | unknown | 50A | 40V | 71W Tc | N-Channel | 4000pF @ 25V | 5.6m Ω @ 20A, 10V | 3.5V @ 250μA | 50A Tc | 85nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCMT180N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fcmt180n65s3-datasheets-4667.pdf | 4-PowerTSFN | 33 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | 650V | 139W Tc | N-Channel | 1350pF @ 400V | 180m Ω @ 8.5A, 10V | 4.5V @ 1.8mA | 17A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU900N60Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-fcu900n60z-datasheets-4784.pdf | TO-251-3 Stub Leads, IPak | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 15 Weeks | 539mg | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 52W | 1 | FET General Purpose Power | 10.9 ns | 5.3ns | 11.9 ns | 33.6 ns | 4.5A | 20V | SILICON | SWITCHING | 600V | 2.5V | 52W Tc | 0.9Ohm | 47.5 mJ | 675V | N-Channel | 710pF @ 25V | 900m Ω @ 2.3A, 10V | 3.5V @ 250μA | 4.5A Tc | 17nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| STF4N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount, Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu4n52k3-datasheets-4742.pdf | TO-220-3 Full Pack | 7mm | 2.4mm | 6.6mm | Lead Free | 2 | No SVHC | 2.6Ohm | 3 | yes | EAR99 | ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | GULL WING | STF4N | 3 | Single | 20W | 1 | FET General Purpose Power | R-PSSO-G2 | 8 ns | 7ns | 14 ns | 21 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 20W Tc | TO-252 | 525V | N-Channel | 334pF @ 100V | 2.6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| FDMC010N08C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2016 | /files/onsemiconductor-fdmc010n08c-datasheets-4683.pdf | 8-PowerWDFN | 20 Weeks | ACTIVE (Last Updated: 20 hours ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 2.4W Ta 52W Tc | N-Channel | 1500pF @ 40V | 10m Ω @ 16A, 10V | 4V @ 90μA | 11A Ta 51A Tc | 22nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9383MTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irf9383mtrpbf-datasheets-4595.pdf | DirectFET™ Isometric MX | Lead Free | 3 | 12 Weeks | 7 | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | 2.1W | 1 | Other Transistors | R-XBCC-N3 | 29 ns | 160ns | 110 ns | 115 ns | 22A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.1W Ta 113W Tc | 0.0029Ohm | -30V | P-Channel | 7305pF @ 15V | 2.9m Ω @ 22A, 10V | 2.4V @ 150μA | 22A Ta 160A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STL60NH3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl60nh3ll-datasheets-4645.pdf | 30V | 30A | 8-PowerVDFN | Lead Free | 5 | 8.5mOhm | 8 | yes | EAR99 | LOW THRESHOLD | e3 | MATTE TIN | DUAL | NO LEAD | 260 | STL60 | 8 | 30 | 60W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N5 | 65ns | 20 ns | 30 ns | 30A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60W Tc | 16A | 64A | 150 mJ | 30V | N-Channel | 1810pF @ 25V | 8.5m Ω @ 8A, 10V | 1V @ 250μA | 30A Tc | 24nC @ 4.5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||
| STU9HN65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu9hn65m2-datasheets-4736.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 26 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STU9H | NOT SPECIFIED | 5.5A | 650V | 60W Tc | N-Channel | 325pF @ 100V | 820m Ω @ 2.5A, 10V | 4V @ 250μA | 5.5A Tc | 11.5nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQD50N04-4M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n044m5lge3-datasheets-4554.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | Unknown | 3 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 4 | 40 | 136W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 11ns | 11 ns | 39 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 1.5V | 136W Tc | 200A | 0.006Ohm | N-Channel | 5860pF @ 25V | 3.5m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| STU1HN60K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std1hn60k3-datasheets-3109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | EAR99 | No | STU1HN | Single | 27W | 1 | 7 ns | 10ns | 31 ns | 23 ns | 1.2A | 30V | 600V | 27W Tc | N-Channel | 140pF @ 50V | 8 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.2A Tc | 9.5nC @ 10V | 10V | ±30V |
