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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TK17V65W,LQ | Toshiba Semiconductor and Storage | $3.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM7ND65CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7nd65ci-datasheets-5061.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 650V | 50W Tc | N-Channel | 1124pF @ 50V | 1.35 Ω @ 1.8A, 10V | 3.8V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9406-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb9406f085-datasheets-5047.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 5 Weeks | 1.31247g | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 176W | 1 | FET General Purpose Power | R-PSSO-G2 | 28 ns | 48ns | 20 ns | 50 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 176W Tj | 40V | N-Channel | 7710pF @ 25V | 1.8m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 138nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IPU95R1K2P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r1k2p7akma1-datasheets-5078.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 52W Tc | N-Channel | 478pF @ 400V | 1.2 Ω @ 2.7A, 10V | 3.5V @ 140μA | 6A Tc | 15nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF7N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fcpf7n60-datasheets-5101.pdf | 600V | 7A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 31W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 31W Tc | TO-220AB | 7A | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||
| SIDR622DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr622dpt1ge3-datasheets-4988.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 150V | 6.25W Ta 125W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 64.6A Ta 56.7A Tc | 41nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD123PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-irfd123pbf-datasheets-4991.pdf | 4-DIP (0.300, 7.62mm) | Lead Free | 4 | 8 Weeks | Unknown | 270mOhm | 4 | yes | EAR99 | AVALANCHE RATED | No | DUAL | 4 | 1W | 1 | FET General Purpose Power | 8.2 ns | 17ns | 17 ns | 14 ns | 600mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 2V | 1.3W Ta | 200V | N-Channel | 360pF @ 25V | 270m Ω @ 780mA, 10V | 4V @ 250μA | 1.3A Ta | 16nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| MCB130N10Y-TP | Micro Commercial Co | $2.17 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcb130n10ytp-datasheets-4998.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 12 Weeks | 100V | 192W Tc | N-Channel | 6124.6pF @ 50V | 4.6m Ω @ 60A, 10V | 4V @ 250μA | 130A Tc | 101.6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIDR680DP-T1-GE3 | Vishay Siliconix | $2.25 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr680dpt1ge3-datasheets-4978.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 80V | 6.25W Ta 125W Tc | N-Channel | 5150pF @ 40V | 2.9mOhm @ 20A, 10V | 3.4V @ 250μA | 32.8A Ta 100A Tc | 105nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| HAT2160H-EL-E | Renesas Electronics America |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/renesaselectronicsamerica-hat2160hele-datasheets-5006.pdf | SC-100, SOT-669 | 4 | 16 Weeks | 5 | yes | EAR99 | Copper, Gold, Tin | No | SINGLE | GULL WING | 260 | 5 | 1 | FET General Purpose Power | R-PSSO-G4 | 17 ns | 60ns | 15 ns | 65 ns | 60A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30W Tc | 240A | N-Channel | 7750pF @ 10V | 2.6m Ω @ 30A, 10V | 2.3V @ 1mA | 60A Ta | 54nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP4N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu4n52k3-datasheets-4742.pdf | TO-220-3 | 10.4mm | 16.4mm | 4.6mm | Lead Free | 3 | No SVHC | 2.6Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | Tin | No | e3 | SINGLE | STP4N | 3 | 20W | 1 | FET General Purpose Power | 8 ns | 7ns | 14 ns | 21 ns | 2.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 3.75V | 45W Tc | TO-220AB | 525V | N-Channel | 334pF @ 100V | 2.6 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 11nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| TSM7ND60CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7nd60ci-datasheets-5024.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 600V | 50W Tc | N-Channel | 1108pF @ 50V | 1.2 Ω @ 2A, 10V | 3.8V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STK820 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stk820-datasheets-4942.pdf | PolarPak® | 4 | 10 | EAR99 | ULTRA-LOW RESISTANCE | e3 | MATTE TIN | DUAL | NO LEAD | STK8 | 10 | 5.2W | 1 | FET General Purpose Power | Not Qualified | R-XDSO-N4 | 23ns | 4 ns | 17 ns | 21A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SOURCE | SWITCHING | 5.2W Ta | 84A | 0.008Ohm | 600 mJ | 25V | N-Channel | 1425pF @ 25V | 7.3m Ω @ 10.5A, 10V | 2.5V @ 250μA | 21A Ta | 9.5nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| STB30NF20 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb30nf20-datasheets-4929.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 4.6mm | 9.35mm | Lead Free | 2 | 12 Weeks | No SVHC | 65mOhm | 2 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | MATTE TIN | GULL WING | 245 | STB30N | 3 | Single | 30 | 125W | 1 | FET General Purpose Power | 35 ns | 15.7ns | 8.8 ns | 38 ns | 30A | 20V | SILICON | SWITCHING | 3V | 125W Tc | 140 mJ | 200V | N-Channel | 1597pF @ 25V | 3 V | 75m Ω @ 15A, 10V | 4V @ 250μA | 30A Tc | 38nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||
| IRFU214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-irfu214pbf-datasheets-4957.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 2Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 7 ns | 7.6ns | 7 ns | 16 ns | 2.2A | 20V | SILICON | DRAIN | SWITCHING | 250V | 250V | 4V | 2.5W Ta 25W Tc | 8.8A | N-Channel | 140pF @ 25V | 2 Ω @ 1.3A, 10V | 4V @ 250μA | 2.2A Tc | 8.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| SIDR626DP-T1-GE3 | Vishay Siliconix | $2.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr626dpt1ge3-datasheets-4939.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 60V | 6.25W Ta 125W Tc | N-Channel | 5130pF @ 30V | 1.7mOhm @ 20A, 10V | 3.4V @ 250μA | 42.8A Ta 100A Tc | 102nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr010pbf-datasheets-4965.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | 250 | 3 | 1 | Single | 40 | 25W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 50ns | 19 ns | 13 ns | 8.2A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.2Ohm | 60V | N-Channel | 250pF @ 25V | 200m Ω @ 4.6A, 10V | 4V @ 250μA | 8.2A Tc | 10nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STU4N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4n80k5-datasheets-8540.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 17 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | STU4N | 1 | Single | 1 | 16.5 ns | 15ns | 21 ns | 36 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 800V | 800V | 60W Tc | 3A | 74.5 mJ | N-Channel | 175pF @ 100V | 2.5 Ω @ 1.5A, 10V | 5V @ 100μA | 3A Tc | 10.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFD224PBF | Vishay Siliconix | $5.27 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfd224pbf-datasheets-4973.pdf | 4-DIP (0.300, 7.62mm) | 8 Weeks | 4 | No | 1W | 1 | 4-DIP, Hexdip, HVMDIP | 260pF | 7 ns | 13ns | 13 ns | 20 ns | 630mA | 20V | 250V | 1W Ta | 1.1Ohm | 250V | N-Channel | 260pF @ 25V | 1.1Ohm @ 380mA, 10V | 4V @ 250μA | 630mA Ta | 14nC @ 10V | 1.1 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFH5302DTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfh5302dtrpbf-datasheets-4396.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | 2.5MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 16 ns | 30ns | 12 ns | 20 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 3.6W Ta 104W Tc | 29A | 400A | 30V | N-Channel | 3635pF @ 25V | 2.5m Ω @ 50A, 10V | 2.35V @ 100μA | 29A Ta 100A Tc | 55nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| SQD50P08-28_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd50p0828ge3-datasheets-4795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 3 | 136W | 1 | TO-252AA | 48A | 20V | 80V | 136W Tc | P-Channel | 6035pF @ 25V | 28mOhm @ 12.5A, 10V | 3.5V @ 250μA | 48A Tc | 145nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STI6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.4mm | 10.75mm | 4.6mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Tin (Sn) | SINGLE | STI6N | 3 | 1 | FET General Purpose Power | 22 ns | 12ns | 20 ns | 49 ns | 5.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 620V | 620V | 3.75V | 90W Tc | 22A | 140 mJ | N-Channel | 875pF @ 50V | 3.75 V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STP2N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std2n62k3-datasheets-5920.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | No SVHC | 3.6Ohm | 3 | EAR99 | ULTRA-LOW RESISTANCE | No | STP2N | 3 | Single | 45W | 1 | 8 ns | 4.4ns | 22 ns | 21 ns | 2.2A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-220AB | 8.8A | 85 mJ | 620V | N-Channel | 340pF @ 50V | 3.6 Ω @ 1.1A, 10V | 4.5V @ 50μA | 2.2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| SIHD5N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sihd5n50dge3-datasheets-4739.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 13 Weeks | 3 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 104W Tc | TO-252AA | 10A | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| TPWR6003PL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerWDFN | 16 Weeks | 30V | 960mW Ta 170W Tc | N-Channel | 10000pF @ 15V | 600μ Ω @ 50A, 10V | 2.1V @ 1mA | 150A Tc | 110nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHJ7N65E-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihj7n65et1ge3-datasheets-4814.pdf | PowerPAK® SO-8 | 18 Weeks | No SVHC | 4 | EAR99 | NOT SPECIFIED | NOT SPECIFIED | 7.9A | 650V | 2V | 96W Tc | N-Channel | 820pF @ 100V | 598m Ω @ 3.5A, 10V | 4V @ 250μA | 7.9A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS4D5N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms4d5n08lc-datasheets-4833.pdf | 8-PowerTDFN | 20 Weeks | yes | 80V | 2.5W Ta 113.6W Tc | N-Channel | 5100pF @ 40V | 4.2m Ω @ 37A, 10V | 2.5V @ 210μA | 17A Ta 116A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr210trrpbf-datasheets-3671.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 1.5Ohm | 3 | yes | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | 8.2 ns | 17ns | 8.9 ns | 14 ns | 2.6A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 25W Tc | 95 mJ | 200V | N-Channel | 140pF @ 25V | 1.5 Ω @ 1.6A, 10V | 4V @ 250μA | 2.6A Tc | 8.2nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| FQP2P40-F080 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqp2p40f080-datasheets-4835.pdf | TO-220-3 | 3 | 7 Weeks | 1.8g | 3 | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | Other Transistors | 30 ns | 75ns | 60 ns | 55 ns | 2A | 30V | SILICON | SWITCHING | 400V | 63W Tc | TO-220AB | 2A | 8A | -400V | P-Channel | 350pF @ 25V | 6.5 Ω @ 1A, 10V | 5V @ 250μA | 2A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| STFI4N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi4n62k3-datasheets-4844.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI4N | Single | 10 ns | 9ns | 19 ns | 29 ns | 3.8A | 30V | 25W Tc | 620V | N-Channel | 550pF @ 50V | 2 Ω @ 1.9A, 10V | 4.5V @ 50μA | 3.8A Tc | 22nC @ 10V | 10V | ±30V |
