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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STFI8N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi8n80k5-datasheets-5500.pdf | TO-262-3 Full Pack, I2Pak | 10.4mm | 10.85mm | 4.6mm | 3 | EAR99 | No | STFI8 | Single | FET General Purpose Power | 12 ns | 14ns | 20 ns | 32 ns | 6A | 30V | 800V | 25W Tc | 6A | N-Channel | 450pF @ 100V | 950m Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 16.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS9N60ATRRPBF | Vishay Siliconix | $2.98 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs9n60apbf-datasheets-3643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 11 Weeks | 1.437803g | 3 | No | 1 | Single | 170W | 1 | D2PAK | 1.4nF | 13 ns | 25ns | 22 ns | 30 ns | 9.2A | 30V | 600V | 170W Tc | 750mOhm | N-Channel | 1400pF @ 25V | 750mOhm @ 5.5A, 10V | 4V @ 250μA | 9.2A Tc | 49nC @ 10V | 750 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| STFI10N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stfi10n62k3-datasheets-5412.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | No | STFI10N | Single | 30W | 14.5 ns | 15ns | 31 ns | 41 ns | 8.4A | 30V | 30W Tc | 620V | N-Channel | 1250pF @ 50V | 750m Ω @ 4A, 10V | 4.5V @ 100μA | 8.4A Tc | 42nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IAUS165N08S5N029ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-iaus165n08s5n029atma1-datasheets-5425.pdf | 8-PowerSMD, Gull Wing | 20 Weeks | 80V | 167W Tc | N-Channel | 6370pF @ 40V | 2.9m Ω @ 80A, 10V | 3.8V @ 108μA | 165A Tc | 90nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34SPBF | Vishay Siliconix | $1.88 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irlz34spbf-datasheets-5430.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 8 Weeks | 50MOhm | 3 | No | 1 | TO-263 (D2Pak) | 1.6nF | 14 ns | 170ns | 56 ns | 30 ns | 30A | 10V | 60V | 3.7W Ta 88W Tc | 50mOhm | N-Channel | 1600pF @ 25V | 50mOhm @ 18A, 5V | 2V @ 250μA | 30A Tc | 35nC @ 5V | 50 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFUC20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 8 Weeks | 329.988449mg | No SVHC | 4.4Ohm | 3 | yes | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | FET General Purpose Power | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.5W Ta 42W Tc | 2A | 8A | 74 mJ | 600V | N-Channel | 350pF @ 25V | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||
| SI7868ADP-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-si7868adpt1e3-datasheets-5408.pdf | PowerPAK® SO-8 | 4.9mm | 1.04mm | 5.89mm | Lead Free | 5 | 14 Weeks | 506.605978mg | Unknown | 2.25mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 5.4W | 1 | FET General Purpose Power | R-XDSO-C5 | 28 ns | 120ns | 12 ns | 58 ns | 40A | 16V | SILICON | DRAIN | SWITCHING | 5.4W Ta 83W Tc | 35A | 70A | 45 mJ | 20V | N-Channel | 6110pF @ 10V | 600 mV | 2.25m Ω @ 20A, 10V | 1.6V @ 250μA | 40A Tc | 150nC @ 10V | 4.5V 10V | ±16V | |||||||||||||||||||||||
| STFI6N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi6n80k5-datasheets-5457.pdf | TO-262-3 Full Pack, I2Pak | 2.084002g | 1.3Ohm | EAR99 | NOT SPECIFIED | STFI6N | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 16 ns | 7.5ns | 16 ns | 28.5 ns | 4.5A | 30V | 800V | 25W Tc | N-Channel | 270pF @ 100V | 1.6 Ω @ 2A, 10V | 5V @ 100μA | 4.5A Tc | 13nC @ 10V | 10V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| STFI15N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stfi15n60m2ep-datasheets-5459.pdf | TO-262-3 Full Pack, I2Pak | 3 | EAR99 | SINGLE | STFI15N | 1 | R-PSIP-T3 | 11A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 25W Tc | TO-281 | 44A | 0.378Ohm | 125 mJ | N-Channel | 590pF @ 100V | 378m Ω @ 5.5A, 10V | 4V @ 250μA | 11A Tc | 17nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| STL33N60M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II Plus | Surface Mount | Surface Mount | 150°C TJ | Cut Tape (CT) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl33n60m2-datasheets-5438.pdf | 8-PowerVDFN | Lead Free | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL33 | 1 | Single | NOT SPECIFIED | 2.8W | 21.5A | 25V | 600V | 190W Tc | N-Channel | 1700pF @ 100V | 135m Ω @ 10.75A, 10V | 4V @ 250μA | 22A Tc | 47nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF380N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fcpf380n60-datasheets-5323.pdf | TO-220-3 Full Pack | 10.36mm | 9.19mm | 4.9mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 31W | 1 | FET General Purpose Power | 14 ns | 7ns | 6 ns | 45 ns | 10.2A | 20V | SILICON | ISOLATED | SWITCHING | 600V | 31W Tc | TO-220AB | 650V | N-Channel | 1665pF @ 25V | 380m Ω @ 5A, 10V | 3.5V @ 250μA | 10.2A Tc | 40nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STU7NF25 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stu7nf25-datasheets-5344.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | STU7N | 1 | Single | 13 ns | 10ns | 6 ns | 26 ns | 8A | 20V | 250V | 72W Tc | N-Channel | 500pF @ 25V | 420m Ω @ 4A, 10V | 4V @ 250μA | 8A Tc | 16nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB86363-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb86363f085-datasheets-5346.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 1.31247g | ACTIVE (Last Updated: 9 hours ago) | yes | not_compliant | e3 | Tin (Sn) | GULL WING | 260 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | R-PSSO-G2 | 38 ns | 129ns | 40 ns | 64 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 300W Tc | 0.0024Ohm | 80V | N-Channel | 10000pF @ 40V | 2.4m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| R6004JNXC7G | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6004jnxc7g-datasheets-5356.pdf | TO-220-3 Full Pack | 3 | 18 Weeks | LOW ON-RESISTANCE | not_compliant | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 600V | 600V | 35W Tc | TO-220AB | 4A | 12A | 52 mJ | N-Channel | 260pF @ 100V | 1.43 Ω @ 2A, 15V | 7V @ 450μA | 4A Tc | 10.5nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||
| STDLED625H | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stdled625h-datasheets-3896.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 3 | EAR99 | No | STDLE | 10 ns | 9ns | 19 ns | 29 ns | 4.5A | 30V | 620V | 70W Tc | N-Channel | 560pF @ 50V | 2 Ω @ 1.9A, 10V | 4.5V @ 50μA | 4.5A Tc | 23nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPDD60R125G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdd60r125g7xtma1-datasheets-5391.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 120W Tc | N-Channel | 1080pF @ 400V | 125m Ω @ 6.4A, 10V | 4V @ 320μA | 20A Tc | 27nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVB190N65S3F | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, SuperFET® III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-nvb190n65s3f-datasheets-5381.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 4 Weeks | yes | 650V | 162W Tc | N-Channel | 1605pF @ 400V | 190m Ω @ 10A, 10V | 5V @ 430μA | 20A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9024PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9024pbf-datasheets-5404.pdf | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 280mOhm | 3 | No | 1 | Single | 42W | 1 | D-Pak | 570pF | 13 ns | 68ns | 29 ns | 15 ns | -8.8A | 20V | 60V | -4V | 2.5W Ta 42W Tc | 200 ns | 280mOhm | -60V | P-Channel | 570pF @ 25V | 280mOhm @ 5.3A, 10V | 4V @ 250μA | 8.8A Tc | 19nC @ 10V | 280 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STU80N4F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | EAR99 | No | STU80 | Single | FET General Purpose Powers | 10.5 ns | 7.6ns | 11.9 ns | 46.1 ns | 80A | 20V | 70W Tc | 40V | N-Channel | 2150pF @ 25V | 6.3m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 36nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IPU95R750P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r750p7akma1-datasheets-5293.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 73W Tc | N-Channel | 712pF @ 400V | 750m Ω @ 4.5A, 10V | 3.5V @ 220μA | 9A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP75N3LLH6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp75n3llh6-datasheets-5297.pdf | TO-220-3 | Lead Free | 3 | EAR99 | No | SINGLE | STP75N | 3 | 60W | 1 | FET General Purpose Power | R-PSFM-T3 | 9.5 ns | 30ns | 12 ns | 37 ns | 75A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 60W Tc | TO-220AB | 300A | 0.0084Ohm | N-Channel | 2030pF @ 25V | 5.9m Ω @ 37.5A, 10V | 2.5V @ 250μA | 75A Tc | 23.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SUM60020E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sum60020ege3-datasheets-5301.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 14 Weeks | TO-263 (D2Pak) | 80V | 375W Tc | N-Channel | 10680pF @ 40V | 2.1mOhm @ 30A, 10V | 4V @ 250μA | 150A Tc | 227nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STB12NM50ND | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | FDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 290mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB12N | 4 | 100W | 1 | FET General Purpose Power | R-PSSO-G2 | 12 ns | 15ns | 17 ns | 40 ns | 11A | 25V | SILICON | SINGLE | DRAIN | SWITCHING | 100W Tc | 44A | 500V | N-Channel | 850pF @ 50V | 380m Ω @ 5.5A, 10V | 5V @ 250μA | 11A Tc | 30nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||
| STFI7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8dn6lf6ag-datasheets-5453.pdf | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI7 | NOT SPECIFIED | 5A | 800V | 25W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | 500V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 11 Weeks | 329.988449mg | Unknown | 1.7Ohm | 3 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 110W | 1 | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 110W Tc | 5A | 20A | 500V | N-Channel | 490pF @ 25V | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| STU7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7n80k5-datasheets-5318.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU7N | Single | 110W | 1 | FET General Purpose Power | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | 6A | 24A | 88 mJ | 800V | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STL100N6LF6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl100n6lf6-datasheets-5234.pdf | 8-PowerVDFN | Lead Free | 5 | 8 | EAR99 | No | DUAL | STL100 | 8 | Single | 80W | 1 | FET General Purpose Powers | R-PDSO-N5 | 100A | 20V | SILICON | DRAIN | SWITCHING | 4.8W Tc | 22A | 0.0072Ohm | 60V | N-Channel | 8900pF @ 25V | 4.5m Ω @ 11A, 10V | 2.5V @ 250μA | 100A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STU8NM50N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu8nm50n-datasheets-5242.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | Lead Free | 3 | No SVHC | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | SINGLE | 260 | STU8N | 3 | 1 | FET General Purpose Power | 7 ns | 4.4ns | 8.8 ns | 25 ns | 5A | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 500V | 500V | 3V | 45W Tc | 5A | 20A | 0.79Ohm | 140 mJ | N-Channel | 364pF @ 50V | 790m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||
| IRFBC30ASTRLPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfbc30astrlpbf-datasheets-5227.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | 8 Weeks | 1.437803g | 3 | No | 1 | Single | 74W | 1 | D2PAK | 510pF | 9.8 ns | 13ns | 12 ns | 19 ns | 3.6A | 30V | 600V | 74W Tc | 2.2Ohm | 600V | N-Channel | 510pF @ 25V | 2.2Ohm @ 2.2A, 10V | 4.5V @ 250μA | 3.6A Tc | 23nC @ 10V | 2.2 Ω | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SIE810DF-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sie810dft1ge3-datasheets-5145.pdf | 10-PolarPAK® (L) | 4 | 14 Weeks | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 1 | FET General Purpose Power | R-XDSO-N4 | 45A | 12V | SILICON | DRAIN | SWITCHING | 20V | 20V | 5.2W Ta 125W Tc | 0.0027Ohm | 36 mJ | N-Channel | 13000pF @ 10V | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 300nC @ 10V | 2.5V 10V | ±12V |
