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MOSFET (Metal Oxide) N-Channel Tube 6.3m Ω @ 40A, 10V ±20V 2150pF @ 25V 36nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: STMicroelectronics
- NO: 761-STU80N4F6
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 35
- Description: MOSFET (Metal Oxide) N-Channel Tube 6.3m Ω @ 40A, 10V ±20V 2150pF @ 25V 36nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ VI |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | Not Applicable |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Powers |
| Technology | MOSFET (Metal Oxide) |
| Base Part Number | STU80 |
| Power Dissipation-Max | 70W Tc |
| Element Configuration | Single |
| Turn On Delay Time | 10.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 6.3m Ω @ 40A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2150pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 36nC @ 10V |
| Rise Time | 7.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11.9 ns |
| Turn-Off Delay Time | 46.1 ns |
| Continuous Drain Current (ID) | 80A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Height | 6.2mm |
| Length | 6.6mm |
| Width | 2.4mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
