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STP75N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi
- Manufacturer: STMicroelectronics
- NO: 761-STP75N3LLH6
- Package: TO-220-3
- Datasheet:
- Stock: 7655
- Description: STP75N3LLH6 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from STMicroelectronics stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tube |
| Series | DeepGATE™, STripFET™ VI |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | SINGLE |
| Base Part Number | STP75N |
| Pin Count | 3 |
| JESD-30 Code | R-PSFM-T3 |
| Number of Elements | 1 |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Power Dissipation-Max | 60W Tc |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 60W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.9m Ω @ 37.5A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2030pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 23.8nC @ 4.5V |
| Rise Time | 30ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | 75A |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0084Ohm |
| Pulsed Drain Current-Max (IDM) | 300A |
| DS Breakdown Voltage-Min | 30V |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
STP75N3LLH6 Description
The STP75N3LLH6 power MOSFET from STMicroelectronics is used to easily switch between multiple electronic signals. It has a redesigned gate structure and uses ST's proprietary STripFETTM technology's 6th iteration of design guidelines. In all packages, the resultant Power MOSFET has the lowest RDS(on). It can dissipate up to 60000 mW of power. This product comes in tube packaging to give a bit more protection by putting the loose parts in an outer tube to ensure parts aren't harmed by bulk shipping. The operating temperature range for this MOSFET transistor is -55 to 175 degrees Celsius. In enhancement mode, this N channel MOSFET transistor works.
STP75N3LLH6 Features
High avalanche ruggedness
Low gate drive power losses
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)
STP75N3LLH6 Applications
Switching applications
