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ContactSQM85N15-19_GE3
MOSFET N-CH 150V 85A TO263
- Manufacturer: Vishay Siliconix
- NO: 880-SQM85N15-19_GE3
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 3771
- Description: MOSFET N-CH 150V 85A TO263(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 375W Tc |
| Element Configuration | Single |
| Power Dissipation | 375W |
| Turn On Delay Time | 22 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 19mOhm @ 30A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6285pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 85A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 120nC @ 10V |
| Rise Time | 170ns |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 40 ns |
| Continuous Drain Current (ID) | 85A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Input Capacitance | 6.285nF |
| Drain to Source Resistance | 19mOhm |
| Rds On Max | 19 mΩ |
| Nominal Vgs | 3 V |
| Height | 4.83mm |
| Length | 10.41mm |
| Width | 9.65mm |
| Radiation Hardening | No |
| REACH SVHC | Unknown |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Supplier Device Package | TO-263 (D2Pak) |
| Weight | 1.437803g |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2015 |
| Series | TrenchFET® |
