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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STFI7LN80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl8dn6lf6ag-datasheets-5453.pdf | TO-262-3 Full Pack, I2Pak | EAR99 | NOT SPECIFIED | STFI7 | NOT SPECIFIED | 5A | 800V | 25W Tc | N-Channel | 270pF @ 100V | 1.15 Ω @ 2.5A, 10V | 5V @ 100μA | 5A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFU430APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfu430apbf-datasheets-5314.pdf | 500V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | Lead Free | 3 | 11 Weeks | 329.988449mg | Unknown | 1.7Ohm | 3 | No | e3 | MATTE TIN | 260 | 3 | 1 | Single | 40 | 110W | 1 | 8.7 ns | 27ns | 16 ns | 17 ns | 5A | 30V | SILICON | DRAIN | SWITCHING | 4.5V | 110W Tc | 5A | 20A | 500V | N-Channel | 490pF @ 25V | 1.7 Ω @ 3A, 10V | 4.5V @ 250μA | 5A Tc | 24nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STU7N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7n80k5-datasheets-5318.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | Lead Free | 3 | 17 Weeks | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | STU7N | Single | 110W | 1 | FET General Purpose Power | 11.3 ns | 8.3ns | 20.2 ns | 23.7 ns | 6A | 30V | SILICON | DRAIN | SWITCHING | 110W Tc | 6A | 24A | 88 mJ | 800V | N-Channel | 360pF @ 100V | 1.2 Ω @ 3A, 10V | 5V @ 100μA | 6A Tc | 13.4nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| STP9N65M2 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp9n65m2-datasheets-5236.pdf | TO-220-3 | 16 Weeks | 329.988449mg | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | NOT SPECIFIED | STP9N | 1 | NOT SPECIFIED | 7.5 ns | 6.6ns | 18 ns | 22.5 ns | 5A | 25V | 3V | 60W Tc | 650V | N-Channel | 315pF @ 100V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 10nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18533KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | NOT SPECIFIED | CSD18533 | Single | NOT SPECIFIED | 160W | 1 | FET General Purpose Power | 5.7 ns | 4.8ns | 3.2 ns | 13 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 60V | 60V | 1.9V | 192W Tc | 0.009Ohm | N-Channel | 3025pF @ 30V | 1.9 V | 6.3m Ω @ 75A, 10V | 2.3V @ 250μA | 72A Ta 100A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| IRFU9210PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfu9210pbf-datasheets-5149.pdf | -1.9A | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8 ns | 12ns | 13 ns | 11 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 200V | 2.5W Ta 25W Tc | 7.6A | 3Ohm | -200V | P-Channel | 170pF @ 25V | 3 Ω @ 1.1A, 10V | 4V @ 250μA | 1.9A Tc | 8.9nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||
| FCU360N65S3R0 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Tube | 1 (Unlimited) | ROHS3 Compliant | /files/onsemiconductor-fcu360n65s3r0-datasheets-5154.pdf | TO-251-3 Stub Leads, IPak | 13 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | NOT SPECIFIED | NOT SPECIFIED | 310mOhm | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD2NK60Z-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stf2nk60z-datasheets-4817.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | No SVHC | 3 | yes | No | e3 | Matte Tin (Sn) - annealed | 260 | STD2N | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | 8 ns | 30ns | 25 ns | 22 ns | 1.4A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 6A | 8Ohm | 90 mJ | 600V | N-Channel | 170pF @ 25V | 8 Ω @ 700mA, 10V | 4.5V @ 50μA | 1.4A Tc | 10nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| SIDR610DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sidr610dpt1ge3-datasheets-5162.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8DC | 200V | 6.25W Ta 125W Tc | N-Channel | 1380pF @ 100V | 31.9mOhm @ 10A, 10V | 4V @ 250μA | 8.9A Ta 39.6A Tc | 38nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP77N6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-220-3 | Lead Free | EAR99 | No | STP77N | 80W | 1 | FET General Purpose Powers | 77A | 20V | Single | 80W Tc | 60V | N-Channel | 5300pF @ 25V | 7m Ω @ 38.5A, 10V | 4V @ 250μA | 77A Tc | 76nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFS11N50ATRLP | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfs11n50atrlp-datasheets-5178.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.67mm | 4.83mm | 9.65mm | Lead Free | 8 Weeks | 1.437803g | 520mOhm | 3 | 1 | Single | TO-263AB | 1.423nF | 14 ns | 35ns | 28 ns | 32 ns | 11A | 30V | 500V | 170W Tc | 520mOhm | 500V | N-Channel | 1423pF @ 25V | 520mOhm @ 6.6A, 10V | 4V @ 250μA | 11A Tc | 52nC @ 10V | 520 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| SIE810DF-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sie810dft1ge3-datasheets-5145.pdf | 10-PolarPAK® (L) | 6.15mm | 800μm | 5.16mm | Lead Free | 4 | 14 Weeks | No SVHC | 20MOhm | 10 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 10 | 1 | Single | 30 | 125mW | 1 | FET General Purpose Power | R-XDSO-N4 | 20 ns | 70ns | 10 ns | 100 ns | 60A | 12V | SILICON | DRAIN | SWITCHING | 1.3V | 5.2W Ta 125W Tc | 45A | 36 mJ | 20V | N-Channel | 13000pF @ 10V | 1.4m Ω @ 25A, 10V | 2V @ 250μA | 60A Tc | 300nC @ 10V | 2.5V 10V | ±12V | |||||||||||||||||||||||||||||
| FQPF8N60C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqpf8n60c-datasheets-5191.pdf&product=onsemiconductor-fqpf8n60c-6830484 | 600V | 7.5A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 2.27g | No SVHC | 3 | ACTIVE, NOT REC (Last Updated: 2 days ago) | yes | EAR99 | FAST SWITCHING | No | e3 | Tin (Sn) | Single | 48W | 1 | 16.5 ns | 60.5ns | 64.5 ns | 81 ns | 7.5A | 30V | 600V | SILICON | ISOLATED | SWITCHING | 4V | 48W Tc | TO-220AB | 600V | N-Channel | 1255pF @ 25V | 4 V | 1.2 Ω @ 3.75A, 10V | 4V @ 250μA | 7.5A Tc | 36nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STP35NF10 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stp35nf10-datasheets-5197.pdf | 100V | 40A | TO-220-3 | 10.4mm | 9.15mm | 4.6mm | Lead Free | 3 | 4.535924g | No SVHC | 35mOhm | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP35N | 3 | Single | 115W | 1 | FET General Purpose Power | 17 ns | 60ns | 15 ns | 60 ns | 40A | 20V | SILICON | DRAIN | SWITCHING | 3V | 115W Tc | TO-220AB | 100V | N-Channel | 1550pF @ 25V | 35m Ω @ 17.5A, 10V | 4V @ 250μA | 40A Tc | 55nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| STP110N8F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ F6 | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp110n8f6-datasheets-5209.pdf | TO-220-3 | 3 | 20 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | NOT SPECIFIED | STP110 | NOT SPECIFIED | 1 | R-PSFM-T3 | 110A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 200W Tc | TO-220AB | 440A | 0.0065Ohm | 180 mJ | N-Channel | 9130pF @ 40V | 6.5m Ω @ 55A, 10V | 4.5V @ 250μA | 110A Tc | 150nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SIHU6N62E-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-sihu6n62ege3-datasheets-5213.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 18 Weeks | 329.988449mg | Unknown | 3 | yes | No | 1 | Single | 1 | 12 ns | 10ns | 16 ns | 22 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 620V | 78W Tc | 6A | 0.9Ohm | 88 mJ | N-Channel | 578pF @ 100V | 900m Ω @ 3A, 10V | 4V @ 250μA | 6A Tc | 34nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| IPDD60R150G7XTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ G7 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipdd60r150g7xtma1-datasheets-5169.pdf | 10-PowerSOP Module | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 95W Tc | N-Channel | 902pF @ 400V | 150m Ω @ 5.3A, 10V | 4V @ 260μA | 16A Tc | 23nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM13ND50CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm13nd50ci-datasheets-5231.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 500V | 57W Tc | N-Channel | 1877pF @ 50V | 480m Ω @ 3.3A, 10V | 3.8V @ 250μA | 13A Tc | 39nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCU850N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcd850n80z-datasheets-7256.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 12 Weeks | 343.08mg | 850mOhm | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 16 ns | 10ns | 4.5 ns | 40 ns | 6A | 20V | 800V | 75W Tc | N-Channel | 1315pF @ 100V | 850m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| STL25N15F3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ III | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl25n15f3-datasheets-5027.pdf | 8-PowerVDFN | Lead Free | 5 | 57MOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) - annealed | DUAL | 260 | STL25 | 8 | 80W | 1 | FET General Purpose Power | R-XDSO-N5 | 9 ns | 13ns | 20 ns | 46 ns | 25A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80W Tc | 6A | 24A | 300 mJ | 150V | N-Channel | 1300pF @ 25V | 57m Ω @ 3A, 10V | 4V @ 250μA | 25A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| SIHD6N65E-GE3 | Vishay Siliconix | $1.10 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sihd6n65ege3-datasheets-5134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 14 Weeks | Unknown | 3 | yes | No | GULL WING | Single | 78W | 1 | R-PSSO-G2 | 14 ns | 12ns | 20 ns | 30 ns | 7A | 20V | SILICON | DRAIN | SWITCHING | 2V | 78W Tc | TO-252AA | 7A | 0.6Ohm | 56 mJ | 650V | N-Channel | 820pF @ 100V | 600m Ω @ 3A, 10V | 4V @ 250μA | 7A Tc | 48nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||
| IRFU224PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfu224pbf-datasheets-5033.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | 1.1Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 1 | 7 ns | 13ns | 12 ns | 20 ns | 3.8A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 42W Tc | 250V | N-Channel | 260pF @ 25V | 1.1 Ω @ 2.3A, 10V | 4V @ 250μA | 3.8A Tc | 14nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| STP3NK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp3nk60z-datasheets-5037.pdf | 600V | 2.4A | TO-220-3 | Lead Free | 3 | No SVHC | 3.6Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) | STP3N | 3 | Single | 45W | 1 | FET General Purpose Power | 9 ns | 14ns | 14 ns | 19 ns | 2.4A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | TO-220AB | 9.6A | 600V | N-Channel | 311pF @ 25V | 3.6 Ω @ 1.2A, 10V | 4.5V @ 50μA | 2.4A Tc | 11.8nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| IRFU9214PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfr9214trpbf-datasheets-8548.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.38mm | Lead Free | 3 | 8 Weeks | 329.988449mg | Unknown | 3Ohm | 3 | EAR99 | AVALANCHE RATED | No | 260 | 3 | 1 | Single | 40 | 50W | 1 | 11 ns | 14ns | 17 ns | 20 ns | 2.7A | 20V | SILICON | DRAIN | SWITCHING | 250V | -4V | 50W Tc | -250V | P-Channel | 220pF @ 25V | -4 V | 3 Ω @ 1.7A, 10V | 4V @ 250μA | 2.7A Tc | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| TK17V65W,LQ | Toshiba Semiconductor and Storage | $3.54 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Tape & Reel (TR) | 1 (Unlimited) | 16 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM7ND65CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm7nd65ci-datasheets-5061.pdf | TO-220-3 Full Pack, Isolated Tab | 28 Weeks | 650V | 50W Tc | N-Channel | 1124pF @ 50V | 1.35 Ω @ 1.8A, 10V | 3.8V @ 250μA | 7A Tc | 25nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDB9406-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb9406f085-datasheets-5047.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 5 Weeks | 1.31247g | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | GULL WING | Single | 176W | 1 | FET General Purpose Power | R-PSSO-G2 | 28 ns | 48ns | 20 ns | 50 ns | 110A | 20V | SILICON | DRAIN | SWITCHING | 176W Tj | 40V | N-Channel | 7710pF @ 25V | 1.8m Ω @ 80A, 10V | 4V @ 250μA | 110A Tc | 138nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPU95R1K2P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r1k2p7akma1-datasheets-5078.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 52W Tc | N-Channel | 478pF @ 400V | 1.2 Ω @ 2.7A, 10V | 3.5V @ 140μA | 6A Tc | 15nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCPF7N60 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fcpf7n60-datasheets-5101.pdf | 600V | 7A | TO-220-3 Full Pack | 10.16mm | 9.19mm | 4.7mm | Lead Free | 3 | 12 Weeks | 2.27g | No SVHC | 600MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 31W | 1 | FET General Purpose Power | Not Qualified | 35 ns | 55ns | 32 ns | 75 ns | 7A | 30V | SILICON | ISOLATED | SWITCHING | 5V | 31W Tc | TO-220AB | 7A | 600V | N-Channel | 920pF @ 25V | 600m Ω @ 3.5A, 10V | 5V @ 250μA | 7A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| TSM9ND50CI | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm9nd50ci-datasheets-5107.pdf | TO-220-3 Full Pack, Isolated Tab | 24 Weeks | NOT SPECIFIED | NOT SPECIFIED | 500V | 50W Tc | N-Channel | 1116pF @ 50V | 900m Ω @ 2.3A, 10V | 3.8V @ 250μA | 9A Tc | 24.5nC @ 10V | 10V | ±30V |
