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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SIHD3N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 11 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 69W Tc | TO-252AA | 3A | 5.5A | 9 mJ | 500V | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STU6N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu6n65k3-datasheets-4448.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | STU6N | Single | 110W | 14 ns | 10ns | 24 ns | 44 ns | 5.4A | 30V | 110W Tc | 650V | N-Channel | 880pF @ 50V | 1.3 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 33nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| FQU5N60CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu5n60ctu-datasheets-4452.pdf | 600V | 5A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 4 Weeks | 343.08mg | 2.5Ohm | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 10 ns | 42ns | 46 ns | 38 ns | 2.8A | 30V | SILICON | SWITCHING | 2.5W Ta 49W Tc | 600V | N-Channel | 670pF @ 25V | 2.5 Ω @ 1.4A, 10V | 4V @ 250μA | 2.8A Tc | 19nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SI4434ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4434adyt1ge3-datasheets-4461.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 250V | 2.9W Ta 6W Tc | N-Channel | 600pF @ 125V | 150mOhm @ 2.8A, 10V | 4V @ 250μA | 2.8A Ta 4.1A Tc | 16.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU3LN62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu3ln62k3-datasheets-4334.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | Lead Free | 3 | No SVHC | 3Ohm | 3 | NRND (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | STU3L | 3 | Single | 45W | 1 | 9 ns | 7ns | 27 ns | 30 ns | 2.5A | 30V | SILICON | SWITCHING | 3.75V | 45W Tc | 90 mJ | 620V | N-Channel | 386pF @ 50V | 3 Ω @ 1.25A, 10V | 4.5V @ 50μA | 2.5A Tc | 17nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||
| SI7434ADP-T1-RE3 | Vishay Siliconix | $22.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7434adpt1re3-datasheets-4338.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 250V | 5W Ta 54.3W Tc | N-Channel | 600pF @ 125V | 150mOhm @ 3.7A, 10V | 4V @ 250μA | 3.7A Ta 12.3A Tc | 16.5nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU4N50TU-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqu4n50tuws-datasheets-4340.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 8 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | Single | 2.5W | 1 | FET General Purpose Power | 12 ns | 45ns | 30 ns | 20 ns | 2.6A | 30V | 2.5W Ta 45W Tc | 500V | N-Channel | 460pF @ 25V | 2.7 Ω @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 13nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||
| STD1NK60-1 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq1hnk60rap-datasheets-7505.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 2.4mm | 6.2mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | Tin | No | e3 | 260 | STD1NK | 3 | Single | 30 | 30W | 1 | FET General Purpose Power | 6.5 ns | 5ns | 25 ns | 19 ns | 1A | 30V | SILICON | SWITCHING | 3V | 30W Tc | 1A | 4A | 25 mJ | 600V | N-Channel | 156pF @ 25V | 8.5 Ω @ 500mA, 10V | 3.7V @ 250μA | 1A Tc | 10nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||
| FQU20N06LTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu20n06ltu-datasheets-4363.pdf&product=onsemiconductor-fqu20n06ltu-6830272 | 60V | 17.2A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 4 Weeks | 343.08mg | 60MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 10 ns | 165ns | 70 ns | 35 ns | 17.2A | 20V | SILICON | SWITCHING | 2.5W Ta 38W Tc | 68.8A | 60V | N-Channel | 630pF @ 25V | 60m Ω @ 8.6A, 10V | 2.5V @ 250μA | 17.2A Tc | 13nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||
| TSM4NB60CH C5G | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Short Leads, IPak, TO-251AA | 20 Weeks | TO-251 (IPAK) | 600V | 50W Tc | N-Channel | 500pF @ 25V | 2.5Ohm @ 2A, 10V | 4.5V @ 250μA | 4A | 14.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS6H850NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | 2012 | /files/onsemiconductor-nttfs6h850ntag-datasheets-4329.pdf | 8-PowerWDFN | 18 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 3.2W Ta 107W Tc | N-Channel | 1140pF @ 40V | 9.5m Ω @ 10A, 10V | 4V @ 70μA | 11A Ta 68A Tc | 19nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK763R4-30,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | SOT | 2 | 3 | No | e3 | Matte Tin (Sn) | YES | SINGLE | GULL WING | 3 | 255W | 1 | R-PSSO-G2 | 32 ns | 64ns | 71 ns | 89 ns | 198A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 255W Tc | 75A | 794A | N-Channel | 4951pF @ 25V | 3.4m Ω @ 25A, 10V | 4V @ 1mA | 75A Ta | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| FDU6N25 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fdu6n25-datasheets-4271.pdf | TO-251-3 Stub Leads, IPak | 6.8mm | 7.57mm | 2.5mm | 3 | 4 Weeks | 539mg | 3 | ACTIVE (Last Updated: 14 hours ago) | yes | EAR99 | No | 8541.29.00.95 | e3 | Tin (Sn) | Single | 1 | FET General Purpose Power | 10 ns | 60ns | 34 ns | 7 ns | 4.4A | 30V | SILICON | SWITCHING | 250V | 250V | 50W Tc | TO-251AA | 18A | 12 mJ | N-Channel | 250pF @ 25V | 1.1 Ω @ 2.2A, 10V | 5V @ 250μA | 4.4A Tc | 6nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| FQU10N20CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-fqd10n20ctm-datasheets-4156.pdf | 200V | 7.8A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 9 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | Single | 50W | 1 | FET General Purpose Power | 11 ns | 92ns | 72 ns | 70 ns | 7.8A | 30V | SILICON | SWITCHING | 50W Tc | 200V | N-Channel | 510pF @ 25V | 360m Ω @ 3.9A, 10V | 4V @ 250μA | 7.8A Tc | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| FDMC8010DC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc8010dc-datasheets-3367.pdf | 8-PowerWDFN | 12 Weeks | 39mg | ACTIVE (Last Updated: 1 week ago) | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Dual | NOT SPECIFIED | 30V | 3W Ta | N-Channel | 7080pF @ 15V | 1.28m Ω @ 37A, 10V | 3V @ 250μA | 37A Ta | 94nC @ 15V | Standard | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR626LDP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir626ldpt1re3-datasheets-4211.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 6.25W Ta 104W Tc | N-Channel | 5900pF @ 30V | 1.5mOhm @ 20A, 10V | 2.5V @ 250μA | 45.6A Ta 186A Tc | 135nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FQU3N50CTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu3n50ctu-datasheets-4309.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 5 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 35W | 1 | FET General Purpose Power | 10 ns | 25ns | 25 ns | 35 ns | 2.5A | 30V | SILICON | SWITCHING | 35W Tc | 200 mJ | 500V | N-Channel | 365pF @ 25V | 2.5 Ω @ 1.25A, 10V | 4V @ 250μA | 2.5A Tc | 13nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||
| TSM045NB06CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm048nb06lcrrlg-datasheets-4010.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.1W Ta 136W Tc | N-Channel | 6870pF @ 30V | 5m Ω @ 16A, 10V | 4V @ 250μA | 16A Ta 104A Tc | 104nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7190ADP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si7190adpt1re3-datasheets-4301.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 250V | 5W Ta 56.8W Tc | N-Channel | 860pF @ 100V | 102mOhm @ 4.3A, 10V | 4V @ 250μA | 4.3A Ta 14.4A Tc | 22.4nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUZ111SLE3045A | Rochester Electronics, LLC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 175°C | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | TO-263 | 50V | 300W | N-Channel | 80A | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9010PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9010pbf-datasheets-4325.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 25W | 1 | Other Transistors | R-PSSO-G2 | 6.1 ns | 47ns | 35 ns | 13 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 50V | 25W Tc | 0.5Ohm | -50V | P-Channel | 240pF @ 25V | 500m Ω @ 2.8A, 10V | 4V @ 250μA | 5.3A Tc | 9.1nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||
| RD3P130SPFRATL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3p130spfratl-datasheets-4116.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 20W Tc | 13A | 52A | 0.23Ohm | P-Channel | 2400pF @ 25V | 200m Ω @ 6.5A, 10V | 2.5V @ 1mA | 13A Ta | 40nC @ 10V | 4V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI4114DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-si4114dyt1e3-datasheets-4177.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | 8 | 14 Weeks | 186.993455mg | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 30 | 2.5W | 1 | FET General Purpose Power | 30 ns | 13ns | 30 ns | 60 ns | 15.2A | 16V | SILICON | SWITCHING | 20V | 20V | 2.5W Ta 5.7W Tc | 20A | 0.006Ohm | N-Channel | 3700pF @ 10V | 6m Ω @ 10A, 10V | 2.1V @ 250μA | 20A Tc | 95nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||
| RS1E301GNTB1 | ROHM Semiconductor | $3.77 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1e301gntb1-datasheets-4170.pdf | 8-PowerTDFN | 5 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 30A | 120A | 0.0033Ohm | 68 mJ | N-Channel | 2500pF @ 15V | 2.2m Ω @ 30A, 10V | 2.5V @ 1mA | 30A Ta 80A Tc | 39.8nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDMS007N08LC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-fdms007n08lc-datasheets-4240.pdf | 8-PowerTDFN | 20 Weeks | yes | 80V | 2.5W Ta 92.6W Tc | N-Channel | 3100pF @ 40V | 6.7m Ω @ 21A, 10V | 2.5V @ 120μA | 14A Ta 84A Tc | 46nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH116DN-T1-GE3 | Vishay Siliconix | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish116dnt1ge3-datasheets-4163.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 40V | 1.5W Ta | N-Channel | 7.8mOhm @ 16.4A, 10V | 2.5V @ 250μA | 10.5A Ta | 23nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD6N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std6n52k3-datasheets-4208.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 1.2Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA-LOW RESISTANCE | No | SINGLE | GULL WING | STD6N | 3 | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 11ns | 18 ns | 31 ns | 5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 70W Tc | 5A | 20A | 525V | N-Channel | 1.2 Ω @ 2.5A, 10V | 4.5V @ 100μA | 5A Tc | 10V | ±30V | ||||||||||||||||||||||||||||||||||
| SIR180DP-T1-RE3 | Vishay Siliconix | $1.71 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir180dpt1re3-datasheets-4199.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 60V | 5.4W Ta 83.3W Tc | N-Channel | 4030pF @ 30V | 2.05mOhm @ 10A, 10V | 3.6V @ 250μA | 32.4A Ta 60A Tc | 87nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6007JND3TL1 | ROHM Semiconductor | $2.49 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6007jnd3tl1-datasheets-4161.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 96W Tc | 7A | 21A | 0.78Ohm | 132 mJ | N-Channel | 475pF @ 100V | 780m Ω @ 3.5A, 15V | 7V @ 1mA | 7A Tc | 17.5nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STS9NF3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts9nf3ll-datasheets-4084.pdf | 30V | 9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 19mOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS9NF | 8 | 30 | 2.5W | 1 | FET General Purpose Power | 18 ns | 32ns | 11 ns | 21 ns | 9A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Tc | 9A | 36A | 30V | N-Channel | 800pF @ 25V | 19m Ω @ 4.5A, 10V | 1V @ 250μA | 9A Tc | 17nC @ 5V | 4.5V 10V | ±16V |
