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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Number of Contacts | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Pitch | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Number of Rows | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| TSM025NB04LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm025nb04lcrrlg-datasheets-4172.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 136W Tc | N-Channel | 6435pF @ 20V | 2.5m Ω @ 24A, 10V | 2.5V @ 250μA | 24A Ta 161A Tc | 112nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR120DP-T1-RE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir120dpt1re3-datasheets-4197.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5.4W Ta 100W Tc | N-Channel | 4150pF @ 40V | 3.55mOhm @ 15A, 10V | 3.5V @ 250μA | 24.7A Ta 106A Tc | 94nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFRC20TRRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/vishaysiliconix-irfrc20trpbf-datasheets-2433.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | 2 | 8 Weeks | 1.437803g | 3 | yes | AVALANCHE RATED | No | e3 | MATTE TIN | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | R-PSSO-G2 | 10 ns | 23ns | 25 ns | 30 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 600V | 600V | 2.5W Ta 42W Tc | 2A | 8A | 74 mJ | N-Channel | 350pF @ 25V | 4.4 Ω @ 1.2A, 10V | 4V @ 250μA | 2A Tc | 18nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SQD23N06-31L_GE3 | Vishay Siliconix | $1.31 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sqd23n0631lge3-datasheets-4018.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 12 Weeks | 1.437803g | Unknown | 3 | No | 1 | Single | 3W | 1 | TO-252, (D-Pak) | 845pF | 8 ns | 15ns | 25 ns | 30 ns | 23A | 20V | 60V | 2V | 37W Tc | 31mOhm | 60V | N-Channel | 845pF @ 25V | 31mOhm @ 15A, 10V | 2.5V @ 250μA | 23A Tc | 24nC @ 10V | 31 mΩ | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| IPSA70R950CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipsa70r950ceakma1-datasheets-4204.pdf | TO-251-3 Stub Leads, IPak | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 94W Tc | 12A | 0.95Ohm | 50 mJ | N-Channel | 328pF @ 100V | 950m Ω @ 1.5A, 10V | 3.5V @ 150μA | 8.7A Tc | 15.3nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH106DN-T1-GE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish106dnt1ge3-datasheets-4029.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 6.2mOhm @ 19.5A, 4.5V | 1.5V @ 250μA | 12.5A Ta | 27nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS46DN-T1-GE3 | Vishay Siliconix | $1.28 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss46dnt1ge3-datasheets-3905.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 100V | 5W Ta 65.7W Tc | N-Channel | 2140pF @ 50V | 12.8mOhm @ 10A, 10V | 3.4V @ 250μA | 12.5A Ta 45.3A Tc | 42nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCD1300N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcd1300n80z-datasheets-3989.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 15 Weeks | 260.37mg | 1.3Ohm | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | 1 | Single | NOT SPECIFIED | FET General Purpose Power | 14 ns | 8.3ns | 6 ns | 33 ns | 4A | 30V | 800V | 52W Tc | 4A | N-Channel | 880pF @ 100V | 1.3 Ω @ 2A, 10V | 4.5V @ 400μA | 4A Tc | 21nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP104-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT, Solder | MOSFET (Metal Oxide) | ROHS3 Compliant | 2002 | /files/onsemiconductor-atp104tlh-datasheets-3934.pdf | ATPAK (2 leads+tab) | 6.5mm | 1.5mm | 7.3mm | Lead Free | 2 Weeks | Unknown | 6.4mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | 50 | EAR99 | Gold | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 3 | Single | 60W | 1 | Other Transistors | 2mm | 24 ns | 520ns | 260 ns | 290 ns | -75A | 20V | 30V | 2 | 60W Tc | P-Channel | 3950pF @ 10V | 8.4m Ω @ 38A, 10V | 75A Ta | 76nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SISS22DN-T1-GE3 | Vishay Siliconix | $1.38 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss22dnt1ge3-datasheets-3928.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 60V | 5W Ta 65.7W Tc | N-Channel | 1870pF @ 30V | 4mOhm @ 15A, 10V | 3.6V @ 250μA | 25A Ta 90.6A Tc | 44nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM025NB04CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm025nb04crrlg-datasheets-4087.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 136W Tc | N-Channel | 7150pF @ 20V | 2.5m Ω @ 24A, 10V | 4V @ 250μA | 24A Ta 161A Tc | 113nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCPF07N65-BP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcpf07n65bp-datasheets-4097.pdf | TO-220-3 Full Pack | 12 Weeks | 650V | N-Channel | 1600pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A | 26nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCP07N65-BP | Micro Commercial Co | $0.64 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcp07n65bp-datasheets-4119.pdf | TO-220-3 | 12 Weeks | 650V | N-Channel | 1600pF @ 25V | 1.4 Ω @ 3.5A, 10V | 4.5V @ 250μA | 7A | 26nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| R6004JND3TL1 | ROHM Semiconductor | $1.50 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r6004jnd3tl1-datasheets-4105.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 60W Tc | 4A | 12A | 52 mJ | N-Channel | 260pF @ 100V | 1.43 Ω @ 2A, 15V | 7V @ 450μA | 4A Tc | 10.5nC @ 15V | 15V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STS9NF3LL | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-sts9nf3ll-datasheets-4084.pdf | 30V | 9A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 19mOhm | 8 | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | 260 | STS9NF | 8 | 30 | 2.5W | 1 | FET General Purpose Power | 18 ns | 32ns | 11 ns | 21 ns | 9A | 16V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 2.5W Tc | 9A | 36A | 30V | N-Channel | 800pF @ 25V | 19m Ω @ 4.5A, 10V | 1V @ 250μA | 9A Tc | 17nC @ 5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||
| TPH1500CNH,L1Q | Toshiba Semiconductor and Storage | $1.56 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | 150°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 150V | 1.6W Ta 78W Tc | N-Channel | 2200pF @ 75V | 15.4m Ω @ 19A, 10V | 4V @ 1mA | 38A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR108DP-T1-RE3 | Vishay Siliconix | $1.05 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir108dpt1re3-datasheets-3997.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 5W Ta 65.7W Tc | N-Channel | 2060pF @ 50V | 13.5mOhm @ 10A, 10V | 3.6V @ 250μA | 12.4A Ta 45A Tc | 41.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ATP108-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | /files/onsemiconductor-atp108tlh-datasheets-3954.pdf | ATPAK (2 leads+tab) | Lead Free | 5 Weeks | 3.949996g | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | not_compliant | e6 | Halogen Free | YES | 3 | 1 | Single | 60W | Other Transistors | 19 ns | 340ns | 290 ns | 340 ns | 70A | 20V | 40V | 60W Tc | -40V | P-Channel | 3850pF @ 20V | 10.4m Ω @ 35A, 10V | 70A Ta | 79.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM048NB06LCR RLG | Taiwan Semiconductor Corporation | $3.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm048nb06lcrrlg-datasheets-4010.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.1W Ta 136W Tc | N-Channel | 6253pF @ 30V | 4.8m Ω @ 16A, 10V | 2.5V @ 250μA | 16A Ta 107A Tc | 105nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQR40030ER_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Tape & Reel (TR) | 1 (Unlimited) | TO-252-4, DPak (3 Leads + Tab) | 14 Weeks | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4852NT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntmfs4852nt1g-datasheets-3899.pdf | 8-PowerTDFN, 5 Leads | 5.1mm | 1.1mm | 6.1mm | Lead Free | 5 | 16 Weeks | No SVHC | 2.1MOhm | 5 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 5 | Single | 2.31W | 1 | FET General Purpose Power | 21.1 ns | 25.6ns | 12 ns | 35 ns | 155A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 900mW Ta 86.2W Tc | 360 mJ | 30V | N-Channel | 4970pF @ 12V | 2.1m Ω @ 30A, 10V | 2.5V @ 250μA | 16A Ta 155A Tc | 71.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| RD3G500GNTL | ROHM Semiconductor | $1.24 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3g500gntl-datasheets-3824.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 35W Tc | 50A | 100A | 0.0063Ohm | 94 mJ | N-Channel | 22800pF @ 20V | 4.9m Ω @ 50A, 10V | 2.5V @ 1mA | 50A Tc | 31nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS02DN-T1-GE3 | Vishay Siliconix | $1.07 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss02dnt1ge3-datasheets-3812.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 25V | 5W Ta 65.7W Tc | N-Channel | 4450pF @ 10V | 1.2mOhm @ 15A, 10V | 2.2V @ 250μA | 51A Ta 80A Tc | 83nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR622DP-T1-RE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir622dpt1ge3-datasheets-8525.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 150V | 6.25W Ta 104W Tc | N-Channel | 1516pF @ 75V | 17.7mOhm @ 20A, 10V | 4.5V @ 250μA | 12.6A Ta 51.6A Tc | 41nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIR165DP-T1-GE3 | Vishay Siliconix | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir165dpt1ge3-datasheets-3889.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 69.4W Tc | P-Channel | 4930pF @ 15V | 4.6mOhm @ 15A, 10V | 2.3V @ 250μA | 60A Tc | 138nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH110DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen II | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-sish110dnt1ge3-datasheets-3892.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 20V | 1.5W Ta | N-Channel | 5.3mOhm @ 21.1A, 10V | 2.5V @ 250μA | 13.5A Ta | 21nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPSA70R2K0CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/infineontechnologies-ipsa70r2k0ceakma1-datasheets-3902.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 42W Tc | 6.3A | 2Ohm | 11 mJ | N-Channel | 163pF @ 100V | 2 Ω @ 1A, 10V | 3.5V @ 70μA | 4A Tc | 7.8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD4NK80ZT4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std4nk80zt4-datasheets-3909.pdf | 800V | 3A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.63mm | 6.2mm | Lead Free | 2 | 12 Weeks | No SVHC | 3.5Ohm | 3 | EAR99 | AVALANCHE RATED | Tin | No | e3 | GULL WING | 260 | STD4N | 3 | 1 | Single | 30 | 80W | 1 | FET General Purpose Power | 150°C | R-PSSO-G2 | 13 ns | 12ns | 32 ns | 35 ns | 1.5A | 30V | SILICON | SWITCHING | 3V | 80W Tc | TO-252AA | 3A | 800V | N-Channel | 575pF @ 25V | 3.5 Ω @ 1.5A, 10V | 4.5V @ 50μA | 3A Tc | 22.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| TN5335N8-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn5335n8g-datasheets-3877.pdf | TO-243AA | 4.6mm | 1.6mm | 2.6mm | 3 | 18 Weeks | 52.786812mg | EAR99 | LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | FLAT | 260 | 1 | Single | 40 | 1.6W | 1 | FET General Purpose Power | Not Qualified | R-PSSO-F3 | 20 ns | 15ns | 15 ns | 25 ns | 230mA | 20V | SILICON | DRAIN | SWITCHING | 1.6W Ta | 350V | N-Channel | 110pF @ 25V | 15 Ω @ 200mA, 10V | 2V @ 1mA | 230mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STL65N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stl65n3llh5-datasheets-3947.pdf | 8-PowerVDFN | 4.75mm | 880μm | 5.75mm | Lead Free | 5 | No SVHC | 5.8mOhm | 8 | yes | EAR99 | No | DUAL | STL65 | 8 | Single | 60W | 1 | FET General Purpose Power | R-PDSO-N5 | 9.3 ns | 14.5ns | 4.5 ns | 22.7 ns | 9.5A | 22V | 30V | SILICON | DRAIN | SWITCHING | 1V | 60W Tc | 65A | 76A | 30V | N-Channel | 1500pF @ 25V | 1 V | 5.8m Ω @ 9.5A, 10V | 1V @ 250μA | 65A Tc | 12nC @ 4.5V | 4.5V 10V | ±22V |
