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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| SQD50N04-4M5L_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-sqd50n044m5lge3-datasheets-4554.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | Unknown | 3 | yes | EAR99 | No | SINGLE | GULL WING | 260 | 4 | 40 | 136W | 1 | FET General Purpose Powers | R-PSSO-G2 | 9 ns | 11ns | 11 ns | 39 ns | 50A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 1.5V | 136W Tc | 200A | 0.006Ohm | N-Channel | 5860pF @ 25V | 3.5m Ω @ 20A, 10V | 2.5V @ 250μA | 50A Tc | 130nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| STU1HN60K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std1hn60k3-datasheets-3109.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.2mm | 2.4mm | 3 | EAR99 | No | STU1HN | Single | 27W | 1 | 7 ns | 10ns | 31 ns | 23 ns | 1.2A | 30V | 600V | 27W Tc | N-Channel | 140pF @ 50V | 8 Ω @ 600mA, 10V | 4.5V @ 50μA | 1.2A Tc | 9.5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| RD3H200SNFRATL | ROHM Semiconductor | $2.65 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rd3h200snfratl-datasheets-3829.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 16 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45V | 45V | 20W Tc | 20A | 40A | 0.04Ohm | N-Channel | 950pF @ 10V | 28m Ω @ 20A, 10V | 2.5V @ 1mA | 20A Ta | 12nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| R6009JND3TL1 | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/rohmsemiconductor-r6009jnd3tl1-datasheets-4647.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | not_compliant | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 125W Tc | 9A | 27A | 0.585Ohm | 177 mJ | N-Channel | 645pF @ 100V | 585m Ω @ 4.5A, 15V | 7V @ 1.38mA | 9A Tc | 22nC @ 15V | 15V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| STB7N52K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stb7n52k3-datasheets-4643.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 850mOhm | 3 | yes | No | e3 | Matte Tin (Sn) - annealed | SINGLE | GULL WING | 245 | STB7N | 4 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 11ns | 19 ns | 36 ns | 6A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 90W Tc | 6.2A | 25A | 525V | N-Channel | 737pF @ 100V | 980m Ω @ 3.1A, 10V | 4.5V @ 50μA | 6A Tc | 34nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| STU65N3LLH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ V | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std65n3llh5-datasheets-5023.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 3 | EAR99 | ULTRA-LOW RESISTANCE | unknown | SINGLE | NOT SPECIFIED | STU65N | 3 | NOT SPECIFIED | 50W | 1 | FET General Purpose Powers | 11.2ns | 6 ns | 32.4 ns | 65A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 50W Tc | 260A | 0.0097Ohm | 30V | N-Channel | 1290pF @ 25V | 7.3m Ω @ 32.5A, 10V | 3V @ 250μA | 65A Tc | 8nC @ 4.5V | 4.5V 10V | ±22V | |||||||||||||||||||||||||||||||||||||
| FQU9N25TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqu9n25tu-datasheets-4660.pdf | 250V | 7.4A | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 3 | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 6 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 105ns | 45 ns | 25 ns | 7.4A | 30V | SILICON | SWITCHING | 2.5W Ta 55W Tc | 29.6A | 0.42Ohm | 250V | N-Channel | 700pF @ 25V | 420m Ω @ 3.7A, 10V | 5V @ 250μA | 7.4A Tc | 20nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||
| FQU2N100TU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqd2n100tm-datasheets-2237.pdf | 1kV | 1.6A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 7.57mm | 2.5mm | Lead Free | 3 | 7 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | Tin | No | e3 | Single | 2.5W | 1 | FET General Purpose Power | 13 ns | 30ns | 35 ns | 25 ns | 1.6A | 30V | SILICON | SWITCHING | 1000V | 2.5W Ta 50W Tc | 6.4A | 9Ohm | 1kV | N-Channel | 520pF @ 25V | 9 Ω @ 800mA, 10V | 5V @ 250μA | 1.6A Tc | 15.5nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||
| FQU2N90TU-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fqu2n90tuws-datasheets-4692.pdf | TO-251-3 Short Leads, IPak, TO-251AA | Lead Free | 6 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 week ago) | yes | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 15 ns | 35ns | 30 ns | 20 ns | 1.7A | 30V | 2.5W Ta 50W Tc | 900V | N-Channel | 500pF @ 25V | 7.2 Ω @ 850mA, 10V | 5V @ 250μA | 1.7A Tc | 15nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| IPSA70R600CEAKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -40°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipsa70r600ceakma1-datasheets-4549.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSIP-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 700V | 700V | 86W Tc | 18A | 0.6Ohm | 55 mJ | N-Channel | 474pF @ 100V | 600m Ω @ 1A, 10V | 3.5V @ 210μA | 10.5A Tc | 22nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SIHFR1N60A-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 2016 | /files/vishaysiliconix-sihfr1n60age3-datasheets-4566.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 8 Weeks | 3 | EAR99 | unknown | 36W | 1 | FET General Purpose Power | 1.4A | 30V | Single | 600V | 36W Tc | N-Channel | 229pF @ 25V | 7 Ω @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 14nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| SIHU5N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-sihu5n50dge3-datasheets-4568.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.73mm | 6.22mm | 2.39mm | 3 | 8 Weeks | 329.988449mg | Unknown | 3 | No | 1 | Single | 1 | 12 ns | 11ns | 11 ns | 14 ns | 5.3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 104W Tc | 28.8 mJ | 500V | N-Channel | 325pF @ 100V | 1.5 Ω @ 2.5A, 10V | 5V @ 250μA | 5.3A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| TSM033NB04LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm033nb04lcrrlg-datasheets-4419.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 107W Tc | N-Channel | 4456pF @ 20V | 3.3m Ω @ 21A, 10V | 2.5V @ 250μA | 21A Ta 121A Tc | 79nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8321LDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fdmc8321ldc-datasheets-4578.pdf | 8-PowerTDFN | 13 Weeks | 32.13mg | 8 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 260 | NOT SPECIFIED | 108A | 40V | 2.9W Ta 56W Tc | N-Channel | 3965pF @ 20V | 2.5m Ω @ 27A, 10V | 3V @ 250μA | 27A Ta 108A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FDB12N50FTM-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdb12n50ftmws-datasheets-4557.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 6 Weeks | 1.31247g | 700MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | Single | 165W | 1 | FET General Purpose Power | 21 ns | 45ns | 35 ns | 50 ns | 11.5A | 30V | 165W Tc | 500V | N-Channel | 1395pF @ 25V | 700m Ω @ 6A, 10V | 5V @ 250μA | 11.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| SIHD3N50D-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 20 Weeks | 3 | No | SINGLE | GULL WING | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 500V | 500V | 69W Tc | TO-252AA | 3A | 5.5A | 9 mJ | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||
| STP78N75F4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp78n75f4-datasheets-4616.pdf | TO-220-3 | Lead Free | 3 | 11mOhm | yes | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | STP78N | 3 | Single | NOT SPECIFIED | 150W | 1 | FET General Purpose Power | Not Qualified | R-PSFM-T3 | 25 ns | 33ns | 14 ns | 61 ns | 78A | 20V | SILICON | SWITCHING | 150W Tc | TO-220AB | 75V | N-Channel | 5015pF @ 25V | 11m Ω @ 39A, 10V | 4V @ 250μA | 78A Tc | 76nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| SIR826BDP-T1-RE3 | Vishay Siliconix | $1.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir826bdpt1re3-datasheets-3897.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 80V | 5W Ta 83W Tc | N-Channel | 3030pF @ 40V | 5.1mOhm @ 15A, 10V | 3.8V @ 250μA | 19.8A Ta 80.8A Tc | 69nC @ 10V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86368-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86368f085-datasheets-4149.pdf | 8-PowerTDFN | 5 | 5 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | NO LEAD | 260 | NOT SPECIFIED | 1 | R-PDSO-N5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 214W Tc | 80A | 0.0045Ohm | 82 mJ | N-Channel | 4350pF @ 40V | 4.5m Ω @ 80A, 10V | 4V @ 250μA | 80A Tc | 75nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STD7NM64N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-252-3, DPak (2 Leads + Tab), SC-63 | 3.949996g | NRND (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STD7 | 1 | Single | NOT SPECIFIED | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | 60W Tc | 640V | N-Channel | 363pF @ 50V | 1.05 Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOI1R4A70 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | -55°C~150°C TJ | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | TO-251-3 Stub Leads, IPak | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 700V | 48W Tc | N-Channel | 354pF @ 100V | 1.4 Ω @ 1A, 10V | 4.1V @ 250μA | 3.8A Tc | 8nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPU95R3K7P7AKMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2018 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipu95r3k7p7akma1-datasheets-4518.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 18 Weeks | 950V | 22W Tc | N-Channel | 196pF @ 400V | 3.7 Ω @ 800mA, 10V | 3.5V @ 40μA | 2A Tc | 6nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH1R306P1,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 60V | 960mW Ta 170W Tc | N-Channel | 8100pF @ 30V | 1.28m Ω @ 50A, 10V | 2.5V @ 1mA | 100A Tc | 91nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RS1E281BNTB1 | ROHM Semiconductor | $2.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-rs1e281bntb1-datasheets-4159.pdf | 8-PowerTDFN | 5 | 16 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 3W Ta | 28A | 112A | 0.0032Ohm | 190 mJ | N-Channel | 5100pF @ 15V | 2.3m Ω @ 28A, 10V | 2.5V @ 1mA | 28A Ta 80A Tc | 94nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| FDD9407L-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd9407lf085-datasheets-4377.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 48 Weeks | yes | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 260 | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 40V | 40V | 227W Tj | TO-252AA | 100A | 0.0024Ohm | 128 mJ | N-Channel | 6700pF @ 25V | 2.4m Ω @ 80A, 4.5V | 3V @ 250μA | 100A Tc | 125nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| NDB5060L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -65°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-ndb5060l-datasheets-4404.pdf | 60V | 26A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 8 Weeks | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | 26A | 60V | GULL WING | Single | 68W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 200ns | 102 ns | 45 ns | 26A | 16V | SILICON | DRAIN | SWITCHING | 68W Tc | 0.05Ohm | 60V | N-Channel | 840pF @ 30V | 35m Ω @ 13A, 10V | 2V @ 250μA | 26A Tc | 24nC @ 5V | 5V 10V | ±16V | ||||||||||||||||||||||||||||||||
| SIR170DP-T1-RE3 | Vishay Siliconix | $1.53 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sir170dpt1re3-datasheets-4392.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 100V | 6.25W Ta 104W Tc | N-Channel | 6195pF @ 50V | 4.8mOhm @ 20A, 10V | 2.5V @ 250μA | 23.2A Ta 95A Tc | 140nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STF10P6F6 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | DeepGATE™, STripFET™ VI | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stf10p6f6-datasheets-4433.pdf | TO-220-3 Full Pack | 3 | 3 | NRND (Last Updated: 8 months ago) | EAR99 | No | STF10P | Single | 20W | 1 | 64 ns | 5.3ns | 3.7 ns | 14 ns | 10A | 20V | SILICON | DRAIN | SWITCHING | 20W Tc | TO-251 | 7.2A | 40A | 0.16Ohm | 80 mJ | 60V | P-Channel | 340pF @ 48V | 160m Ω @ 5A, 10V | 4V @ 250μA | 10A Tc | 6.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| SIHD3N50D-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/vishaysiliconix-sihd3n50dge3-datasheets-4436.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.38mm | 6.22mm | 2 | 11 Weeks | 1.437803g | Unknown | 3 | No | GULL WING | 1 | Single | 104W | 1 | FET General Purpose Powers | R-PSSO-G2 | 12 ns | 9ns | 13 ns | 11 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 3V | 69W Tc | TO-252AA | 3A | 5.5A | 9 mJ | 500V | N-Channel | 175pF @ 100V | 3.2 Ω @ 2.5A, 10V | 5V @ 250μA | 3A Tc | 12nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||
| STU6N65K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stu6n65k3-datasheets-4448.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | NRND (Last Updated: 7 months ago) | EAR99 | No | STU6N | Single | 110W | 14 ns | 10ns | 24 ns | 44 ns | 5.4A | 30V | 110W Tc | 650V | N-Channel | 880pF @ 50V | 1.3 Ω @ 2.7A, 10V | 4.5V @ 50μA | 5.4A Tc | 33nC @ 10V | 10V | ±30V |
