STU4N52K3

MOSFET (Metal Oxide) N-Channel Tube 2.6 Ω @ 1.25A, 10V ±30V 334pF @ 100V 11nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA


  • Manufacturer: STMicroelectronics
  • NO: 761-STU4N52K3
  • Package: TO-251-3 Short Leads, IPak, TO-251AA
  • Datasheet: pdf
  • Stock: 4935
  • Description: MOSFET (Metal Oxide) N-Channel Tube 2.6 Ω @ 1.25A, 10V ±30V 334pF @ 100V 11nC @ 10V TO-251-3 Short Leads, IPak, TO-251AA (Kg)

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SPECIFICATIONS

Parameters
ECCN Code EAR99
Terminal Finish Matte Tin (Sn) - annealed
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
Base Part Number STU4N
Pin Count 3
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 45W
Turn On Delay Time 8 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 2.6 Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id 4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds 334pF @ 100V
Current - Continuous Drain (Id) @ 25°C 2.5A Tc
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 14 ns
Turn-Off Delay Time 21 ns
Continuous Drain Current (ID) 2.5A
Threshold Voltage 3.75V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 525V
Pulsed Drain Current-Max (IDM) 10A
Avalanche Energy Rating (Eas) 110 mJ
Height 15.75mm
Length 10.4mm
Width 4.6mm
REACH SVHC No SVHC
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Lifecycle Status ACTIVE (Last Updated: 7 months ago)
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tube
Series SuperMESH3™
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3

In Stock

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