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FCU900N60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCU900N60Z
- Package: TO-251-3 Stub Leads, IPak
- Datasheet:
- Stock: 8464
- Description: FCU900N60Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 15 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Stub Leads, IPak |
| Number of Pins | 3 |
| Weight | 539mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2012 |
| Series | SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 52W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 52W |
| Turn On Delay Time | 10.9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 900m Ω @ 2.3A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 5.3ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 11.9 ns |
| Turn-Off Delay Time | 33.6 ns |
| Continuous Drain Current (ID) | 4.5A |
| Threshold Voltage | 2.5V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.9Ohm |
| Drain to Source Breakdown Voltage | 675V |
| Avalanche Energy Rating (Eas) | 47.5 mJ |
| Height | 7.57mm |
| Length | 6.8mm |
| Width | 2.5mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCU900N60Z Description
FCU900N60Z N-channel MOSFET is based on an original, unique vertical structure. FCU900N60Z MOSFET results in a dramatic reduction in the on-resistance. FCU900N60Z ON Semiconductor is utilized in the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
FCU900N60Z Features
Ultra low gate charge
Max. RDS(on) = 900mΩ
Low effective output capacitance
ESD improved capacity
100% avalanche tested
FCU900N60Z Applications
PFC
Serer power
Telecom power
FPD TV power
ATX power
