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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lead Pitch | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Row Spacing | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| PSMN017-30PL,127 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn01730pl127-datasheets-9074.pdf | TO-220-3 | 3 | 12 Weeks | 3 | No | e3 | Tin (Sn) | NO | SINGLE | 3 | 45W | 1 | 10.7 ns | 9.2ns | 5.1 ns | 11.4 ns | 32A | 20V | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 45W Tc | TO-220AB | 152A | 30V | N-Channel | 552pF @ 15V | 17m Ω @ 10A, 10V | 2.15V @ 1mA | 32A Tc | 10.7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4190ADY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si4190adyt1ge3-datasheets-8842.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.75mm | 4mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 8.8MOhm | 8 | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 30 | 3W | 1 | 150°C | 12 ns | 34 ns | 13A | 20V | SILICON | SWITCHING | 1.5V | 3W Ta 6W Tc | 100V | N-Channel | 1970pF @ 50V | 1.5 V | 8.8m Ω @ 15A, 10V | 2.8V @ 250μA | 18.4A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| BSC080P03LSGAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-bsc080p03lsgauma1-datasheets-8896.pdf | 8-PowerVDFN | Contains Lead | 5 | 16 Weeks | 8 | no | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | Halogen Free | DUAL | FLAT | NOT SPECIFIED | 8 | NOT SPECIFIED | 2.5W | 1 | Not Qualified | R-PDSO-F5 | 87ns | 16A | 25V | -30V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 89W Tc | P-Channel | 6140pF @ 15V | 8m Ω @ 30A, 10V | 2.2V @ 250μA | 16A Ta 30A Tc | 122.4nC @ 10V | 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||
| CSD25404Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/texasinstruments-csd25404q3t-datasheets-6127.pdf | 8-PowerVDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | NO LEAD | CSD25404 | Single | 1 | 104A | SILICON | SOURCE | SWITCHING | 20V | 20V | 2.8W Ta 96W Tc | 240A | 0.0121Ohm | P-Channel | 2120pF @ 10V | 6.5m Ω @ 10A, 4.5V | 1.15V @ 250μA | 104A Tc | 14.1nC @ 4.5V | 1.8V 4.5V | ±12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD9014PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2005 | /files/vishaysiliconix-irfd9014pbf-datasheets-8922.pdf | 4-DIP (0.300, 7.62mm) | 6.2738mm | 3.3782mm | 5.0038mm | Lead Free | 8 Weeks | No SVHC | 500mOhm | 4 | 2.54mm | No | Single | 1.3W | 1 | 4-DIP, Hexdip, HVMDIP | 270pF | 11 ns | 63ns | 63 ns | 10 ns | 1.1A | 20V | -60V | 60V | 7.62 mm | -4V | 1.3W Ta | 500mOhm | 60V | P-Channel | 270pF @ 25V | -4 V | 500mOhm @ 660mA, 10V | 4V @ 250μA | 1.1A Ta | 12nC @ 10V | 500 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRF1018ESTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irf1018estrlpbf-datasheets-8372.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | No SVHC | 8.4MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 110W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 35ns | 46 ns | 55 ns | 79A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 110W Tc | 88 mJ | 60V | N-Channel | 2290pF @ 50V | 4 V | 8.4m Ω @ 47A, 10V | 4V @ 100μA | 79A Tc | 69nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRFR3607TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfu3607pbf-datasheets-2133.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.3876mm | 6.22mm | Lead Free | 2 | 12 Weeks | No SVHC | 9MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | GULL WING | 260 | 30 | 140W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 110ns | 96 ns | 43 ns | 80mA | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2V | 140W Tc | TO-252AA | 56A | 75V | N-Channel | 3070pF @ 50V | 2 V | 9m Ω @ 46A, 10V | 4V @ 100μA | 56A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| VN10LP | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-vn10lp-datasheets-8827.pdf | 60V | 270mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | 1.27mm | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | FET General Purpose Powers | 270mA | 20V | SILICON | 2.5V | 625mW Ta | 0.27A | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 2.5V @ 1mA | 270mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| STD7NM60N | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ II | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu7nm60n-datasheets-2623.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 900mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | GULL WING | STD7 | 3 | Single | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 10ns | 12 ns | 26 ns | 5A | 25V | SILICON | SWITCHING | 3V | 45W Tc | 5A | 20A | 119 mJ | 600V | N-Channel | 363pF @ 50V | 900m Ω @ 2.5A, 10V | 4V @ 250μA | 5A Tc | 14nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||
| ZVN3310A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn3310a-datasheets-8837.pdf | 100V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 10Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | FET General Purpose Powers | 5 ns | 7ns | 7 ns | 6 ns | 200mA | 20V | SILICON | SWITCHING | 2.4V | 625mW Ta | 0.2A | 5 pF | 100V | N-Channel | 40pF @ 25V | 10 Ω @ 500mA, 10V | 2.4V @ 1mA | 200mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| RFD14N05LSM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tube | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1996 | /files/onsemiconductor-rfd14n05l-datasheets-8817.pdf | 50V | 14A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 48W | 1 | FET General Purpose Power | R-PSSO-G2 | 13 ns | 24ns | 16 ns | 42 ns | 14A | 10V | 50V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | TO-252AA | 125 ns | 50V | N-Channel | 670pF @ 25V | 2 V | 100m Ω @ 14A, 5V | 2V @ 250μA | 14A Tc | 40nC @ 10V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||
| FDS8638 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fds8638-datasheets-8687.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | Lead Free | 8 | 9 Weeks | 130mg | No SVHC | 4.3MOhm | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 16 ns | 6ns | 5 ns | 39 ns | 18A | 20V | SILICON | SWITCHING | 1.9V | 2.5W Ta | 40V | N-Channel | 5680pF @ 15V | 1.9 V | 4.3m Ω @ 18A, 10V | 3V @ 250μA | 18A Ta | 86nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZVP2106A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvp2106a-datasheets-8878.pdf&product=diodesincorporated-zvp2106a-6829086 | -60V | -280mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 6.51mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | yes | EAR99 | No | E-Line | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | Other Transistors | 7 ns | 15ns | 15 ns | 12 ns | 320mA | 20V | SILICON | 60V | -3.5V | 700mW Ta | 0.28A | 20 pF | -60V | P-Channel | 100pF @ 18V | 5 Ω @ 500mA, 10V | 3.5V @ 1mA | 280mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| SI4488DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/vishaysiliconix-si4488dyt1e3-datasheets-8822.pdf | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.5494mm | 3.9878mm | Lead Free | 8 | 14 Weeks | 506.605978mg | No SVHC | 50mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.56W | 1 | FET General Purpose Powers | 12 ns | 7ns | 7 ns | 22 ns | 5A | 20V | SILICON | 2V | 1.56W Ta | 150V | N-Channel | 2 V | 50m Ω @ 5A, 10V | 2V @ 250μA (Min) | 3.5A Ta | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC86520L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc86520l-datasheets-8732.pdf | 8-PowerWDFN | 3.3mm | 750μm | 3.3mm | Lead Free | 5 | 14 Weeks | 165.33333mg | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | Single | 2.3W | 1 | FET General Purpose Power | S-PDSO-N5 | 15 ns | 5.2ns | 3.4 ns | 32 ns | 13.5A | 20V | SILICON | DRAIN | SWITCHING | 2.3W Ta 40W Tc | MO-229 | 22A | 60A | 0.0079Ohm | 79 mJ | 60V | N-Channel | 4550pF @ 30V | 7.9m Ω @ 13.5A, 10V | 3V @ 250μA | 13.5A Ta 22A Tc | 64nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSO201SPHXUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-bso201sphxuma1-datasheets-8039.pdf | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | No SVHC | 8 | yes | EAR99 | Tin | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 8 | NOT SPECIFIED | 1.6W | 1 | Not Qualified | 21 ns | 99ns | 162 ns | 99 ns | 14.9A | 12V | -20V | SILICON | SINGLE WITH BUILT-IN DIODE | 20V | -900mV | 1.6W Ta | 9.3A | 59.6A | P-Channel | 9600pF @ 15V | 8m Ω @ 14.9A, 4.5V | 1.2V @ 250μA | 12A Ta | 88nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| DMTH6002LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/diodesincorporated-dmth6002lps13-datasheets-8552.pdf | 8-PowerTDFN | 5 | 18 Weeks | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 167W | 100A | 200A | 0.003Ohm | 294 mJ | N-Channel | 6555pF @ 30V | 2m Ω @ 50A, 10V | 3V @ 250μA | 100A Tc | 130.8nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86252 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdms86252-datasheets-8636.pdf | 8-PowerTDFN | 5mm | 1.05mm | 6mm | Lead Free | 5 | 8 Weeks | 74mg | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | Single | 69W | 1 | FET General Purpose Power | R-PDSO-F5 | 7.7 ns | 2.3ns | 3.2 ns | 15 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 2.8V | 2.5W Ta 69W Tc | MO-240AA | 4.6A | 20A | 50 mJ | 150V | N-Channel | 905pF @ 75V | 51m Ω @ 4.6A, 10V | 4V @ 250μA | 4.6A Ta 16A Tc | 15nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| CSD17575Q3T | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 3.3mm | 3.3mm | Contains Lead | 5 | 6 Weeks | 24.012046mg | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | not_compliant | e3 | DUAL | NO LEAD | 260 | CSD17575 | 1 | Single | NOT SPECIFIED | 1 | 4 ns | 10ns | 3 ns | 20 ns | 60A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 1.4V | 2.8W Ta 108W Tc | 27A | 240A | 0.0032Ohm | 204 pF | N-Channel | 4420pF @ 15V | 2.3m Ω @ 25A, 10V | 1.8V @ 250μA | 60A Ta | 30nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IPD65R380C6BTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd65r380c6btma1-datasheets-8795.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 650V | 650V | 83W Tc | 10.6A | 29A | 0.38Ohm | 215 mJ | N-Channel | 710pF @ 100V | 380m Ω @ 3.2A, 10V | 3.5V @ 320μA | 10.6A Tc | 39nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFD110PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfd110pbf-datasheets-8803.pdf | 100V | 1A | 4-DIP (0.300, 7.62mm) | 5mm | 4.57mm | 6.29mm | Lead Free | 3 | 8 Weeks | Unknown | 540mOhm | 4 | 2.54mm | EAR99 | DUAL | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.3W | 1 | Not Qualified | 175°C | R-PDIP-T3 | 6.9 ns | 16ns | 16 ns | 15 ns | 1A | 20V | 100V | SILICON | DRAIN | SWITCHING | 7.62 mm | 4V | 1.3W Ta | 200 ns | 1A | 100V | N-Channel | 180pF @ 25V | 4 V | 540m Ω @ 600mA, 10V | 4V @ 250μA | 1A Ta | 8.3nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| AUIRFR5410TRL | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, HEXFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-auirfr5410trl-datasheets-8807.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 26 Weeks | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | YES | SINGLE | GULL WING | 260 | 30 | 1 | Other Transistors | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 66W Tc | TO-252AA | 13A | 52A | 0.205Ohm | 194 mJ | P-Channel | 760pF @ 25V | 205m Ω @ 7.8A, 10V | 4V @ 250μA | 13A Tc | 58nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| RFD14N05L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | https://pdf.utmel.com/r/datasheets/onsemiconductor-rfd14n05l-datasheets-8817.pdf | 50V | 14A | TO-251-3 Short Leads, IPak, TO-251AA | 6.8mm | 6.3mm | 2.5mm | Lead Free | 3 | 8 Weeks | 343.08mg | No SVHC | 100mOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | Single | 48W | 1 | FET General Purpose Power | 13 ns | 24ns | 16 ns | 42 ns | 14A | 10V | SILICON | DRAIN | SWITCHING | 2V | 48W Tc | 125 ns | 50V | N-Channel | 670pF @ 25V | 100m Ω @ 14A, 5V | 2V @ 250μA | 14A Tc | 40nC @ 10V | 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||||
| STL120N4F6AG | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F6 | Surface Mount | Surface Mount | 175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stl120n4f6ag-datasheets-8501.pdf | 8-PowerVDFN | 20 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL120 | NOT SPECIFIED | FET General Purpose Power | 55A | Single | 40V | 96W Tc | 120A | N-Channel | 3700pF @ 25V | 3.6m Ω @ 13A, 10V | 4V @ 250μA | 55A Tc | 63nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVNL120A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvnl120a-datasheets-8631.pdf | 200V | 180mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 10Ohm | 3 | yes | EAR99 | No | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | FET General Purpose Power | 8 ns | 8ns | 8 ns | 20 ns | 180mA | 20V | SILICON | SWITCHING | 1.5V | 700mW Ta | 7 pF | 200V | N-Channel | 85pF @ 25V | 10 Ω @ 250mA, 5V | 1.5V @ 1mA | 180mA Ta | 3V 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFH7085TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | StrongIRFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfh7085trpbf-datasheets-8645.pdf | 8-PowerVDFN | 6.15mm | 950μm | 5.15mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | DUAL | NO LEAD | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 156W | 1 | 150°C | R-PDSO-N5 | 13 ns | 25ns | 23 ns | 63 ns | 23A | 20V | SILICON | DRAIN | SWITCHING | 3.7V | 156W Tc | 590A | 0.0032Ohm | 554 mJ | 60V | N-Channel | 6460pF @ 25V | 3.2m Ω @ 75A, 10V | 3.7V @ 150μA | 100A Tc | 165nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| BS170P | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount, Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-bs170p-datasheets-8652.pdf&product=diodesincorporated-bs170p-6829048 | 60V | 270mA | TO-226-3, TO-92-3 (TO-226AA) | 3mm | 1.1mm | 1.4mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 5Ohm | 3 | yes | EAR99 | Tin | e3 | WIRE | 260 | 3 | 1 | Single | 40 | 625mW | 1 | Not Qualified | 10 ns | 10 ns | 270mA | 20V | SILICON | SWITCHING | 3V | 625mW Ta | 0.27A | 60V | N-Channel | 60pF @ 10V | 3 V | 5 Ω @ 200mA, 10V | 3V @ 1mA | 270mA Ta | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| TN0606N3-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-tn0606n3g-datasheets-8656.pdf | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.33mm | 4.19mm | 3 | 20 Weeks | 453.59237mg | 3 | EAR99 | LOW THRESHOLD | No | e3 | Matte Tin (Sn) - annealed | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 6 ns | 14ns | 16 ns | 16 ns | 500mA | 20V | SILICON | SWITCHING | 1W Tc | 0.5A | 2Ohm | 60V | N-Channel | 150pF @ 25V | 1.5 Ω @ 750mA, 10V | 2V @ 1mA | 500mA Tj | 3V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FQU13N10LTU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/onsemiconductor-fqd13n10ltm-datasheets-4602.pdf&product=onsemiconductor-fqu13n10ltu-6829025 | 100V | 10A | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.1mm | 2.3mm | Lead Free | 3 | 5 Weeks | 343.08mg | No SVHC | 180MOhm | 3 | ACTIVE (Last Updated: 5 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 7.5 ns | 220ns | 72 ns | 22 ns | 10A | 20V | SILICON | SWITCHING | 2V | 2.5W Ta 40W Tc | 40A | 95 mJ | 100V | N-Channel | 520pF @ 25V | 180m Ω @ 5A, 10V | 2V @ 250μA | 10A Tc | 12nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SIR800DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/vishaysiliconix-sir800dpt1ge3-datasheets-8428.pdf | PowerPAK® SO-8 | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 5.2W | 1 | FET General Purpose Power | R-XDSO-C5 | 27 ns | 15ns | 27 ns | 70 ns | 50A | 12V | SILICON | DRAIN | 600mV | 5.2W Ta 69W Tc | 35.4A | 0.0023Ohm | 45 mJ | 20V | N-Channel | 5125pF @ 10V | 600 mV | 2.3m Ω @ 15A, 10V | 1.5V @ 250μA | 50A Tc | 133nC @ 10V | 2.5V 10V | ±12V |
