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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD135N08N3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipd135n08n3gatma1-datasheets-4635.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | TO-252AA | 45A | 180A | 0.0135Ohm | 50 mJ | N-Channel | 1730pF @ 40V | 13.5m Ω @ 45A, 10V | 3.5V @ 33μA | 45A Tc | 25nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| FCD850N80Z | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® II | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcd850n80z-datasheets-7256.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 13 Weeks | 260.37mg | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 245 | 1 | Single | NOT SPECIFIED | 16 ns | 10ns | 4.5 ns | 40 ns | 6A | 20V | 75W Tc | 800V | N-Channel | 1315pF @ 100V | 850m Ω @ 3A, 10V | 4.5V @ 600μA | 6A Tc | 29nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD86250-F085 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, PowerTrench® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2016 | /files/onsemiconductor-fdd86250f085-datasheets-7586.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 52 Weeks | ACTIVE (Last Updated: 2 days ago) | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 150V | 150V | 160W Tj | TO-252AA | 50A | 0.022Ohm | 80 mJ | N-Channel | 1900pF @ 75V | 22m Ω @ 20A, 10V | 4V @ 250μA | 50A Tc | 37nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM900N06CH X0G | Taiwan Semiconductor Corporation | $1.63 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm900n06chx0g-datasheets-7639.pdf | TO-251-3 Stub Leads, IPak | 20 Weeks | TO-251 (IPAK) | 60V | 25W Tc | N-Channel | 500pF @ 15V | 90mOhm @ 6A, 10V | 2.5V @ 250μA | 11A Tc | 9.3nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6675 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/onsemiconductor-fds6675-datasheets-7642.pdf | -30V | -11A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 14mOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | DUAL | GULL WING | FDS6675 | Single | 2.5W | 1 | Other Transistors | 12 ns | 16ns | 100 ns | 50 ns | 11A | 20V | -30V | SILICON | SWITCHING | 30V | -1.7V | 2.5W Ta | -30V | P-Channel | 3000pF @ 15V | -1.7 V | 14m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 42nC @ 5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PSMN1R3-30YL,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/nexperiausainc-psmn1r330yl115-datasheets-7525.pdf | SOT-1023, 4-LFPAK | 4 | 12 Weeks | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 30V | 121W Tc | 100A | 923A | 0.00195Ohm | 383 mJ | N-Channel | 6227pF @ 12V | 1.3m Ω @ 15A, 10V | 2.15V @ 1mA | 100A Tc | 100nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRLZ34NSTRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/infineontechnologies-irlz34nstrlpbf-datasheets-7668.pdf | 55V | 30A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Contains Lead | 2 | 12 Weeks | No SVHC | 35mOhm | 3 | EAR99 | LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY, AVALANCHE RATED | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | GULL WING | 260 | Single | 30 | 68W | 1 | R-PSSO-G2 | 8.9 ns | 100ns | 29 ns | 21 ns | 30A | 16V | 55V | SILICON | DRAIN | SWITCHING | 2V | 3.8W Ta 68W Tc | 55V | N-Channel | 880pF @ 25V | 2 V | 35m Ω @ 16A, 10V | 2V @ 250μA | 30A Tc | 25nC @ 5V | 4V 10V | ±16V | ||||||||||||||||||||||||||||||||||||
| IRFS3806TRLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3806trlpbf-datasheets-7690.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.668mm | 4.826mm | 9.65mm | Lead Free | 2 | 12 Weeks | 3 | EAR99 | No | GULL WING | Single | 71W | 1 | FET General Purpose Power | R-PSSO-G2 | 6.3 ns | 40ns | 47 ns | 49 ns | 43A | 20V | SILICON | DRAIN | SWITCHING | 71W Tc | 60V | N-Channel | 1150pF @ 50V | 15.8m Ω @ 25A, 10V | 4V @ 50μA | 43A Tc | 30nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRLR3705ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-irlr3705ztrpbf-datasheets-7722.pdf | 55V | 42A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.7056mm | 2.2606mm | 6.22mm | Contains Lead, Lead Free | 2 | 12 Weeks | No SVHC | 8MOhm | 3 | EAR99 | HIGH RELIABILITY | Tin | No | e3 | GULL WING | 260 | Single | 30 | 130W | 1 | FET General Purpose Power | R-PSSO-G2 | 17 ns | 150ns | 70 ns | 33 ns | 89A | 16V | 55V | SILICON | DRAIN | SWITCHING | 3V | 130W Tc | TO-252AA | 42 ns | 55V | N-Channel | 2900pF @ 25V | 3 V | 8m Ω @ 42A, 10V | 3V @ 250μA | 42A Tc | 66nC @ 5V | 4.5V 10V | ±16V | |||||||||||||||||||||||||||||||||
| FDS3572 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fds3572-datasheets-7416.pdf | 80V | 8.9A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 12 Weeks | 130mg | No SVHC | 16MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 2.5W | 1 | FET General Purpose Power | Not Qualified | 13 ns | 14ns | 13 ns | 31 ns | 8.9A | 20V | SILICON | SWITCHING | 4V | 2.5W Ta | 80V | N-Channel | 1990pF @ 25V | 4 V | 16m Ω @ 8.9A, 10V | 4V @ 250μA | 8.9A Ta | 41nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| FDS8840NZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | 8-SOIC (0.154, 3.90mm Width) | 4.9mm | 1.575mm | 3.9mm | 8 | 16 Weeks | 130mg | 8 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 18 ns | 13ns | 11 ns | 57 ns | 18.6A | 20V | SILICON | SWITCHING | 2.5W Ta | 0.0045Ohm | 670 pF | 40V | N-Channel | 7535pF @ 20V | 4.5m Ω @ 18.6A, 10V | 3V @ 250μA | 18.6A Ta | 144nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| TPH6400ENH,L1Q | Toshiba Semiconductor and Storage | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVIII-H | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | RoHS Compliant | 2014 | 8-PowerVDFN | 12 Weeks | 850.995985mg | 8 | EAR99 | No | 1 | Single | FET General Purpose Power | 14.6 ns | 5.4ns | 5.2 ns | 19 ns | 13A | 20V | 200V | 1.6W Ta 57W Tc | N-Channel | 1100pF @ 100V | 64m Ω @ 6.5A, 10V | 4V @ 300μA | 13A Ta | 11.2nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMS86520 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-fdms86520-datasheets-7477.pdf | 8-PowerTDFN | 5.1mm | 1.1mm | 6.25mm | 5 | 13 Weeks | 68.1mg | 8 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 1 | Single | 69W | 1 | FET General Purpose Power | 150°C | R-PDSO-F5 | 17 ns | 6.7ns | 4 ns | 20 ns | 42A | 20V | SILICON | DRAIN | SWITCHING | 2.5W Ta 69W Tc | MO-240AA | 0.0074Ohm | 60V | N-Channel | 2850pF @ 30V | 7.4m Ω @ 14A, 10V | 4.5V @ 250μA | 14A Ta 42A Tc | 40nC @ 10V | 8V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| AON6144 | Alpha & Omega Semiconductor Inc. | $0.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | 8-PowerSMD, Flat Leads | 18 Weeks | 8-DFN (5x6) | 40V | 78W Tc | N-Channel | 3780pF @ 20V | 2.4mOhm @ 20A, 10V | 2.4V @ 250μA | 100A Tc | 70nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6284 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 18 Weeks | FET General Purpose Power | 78A | Single | 80V | 7.4W Ta 78W Tc | N-Channel | 2162pF @ 40V | 7.1m Ω @ 20A, 10V | 3.3V @ 250μA | 24A Ta 78A Tc | 40nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFH5210TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-irfh5210trpbf-datasheets-7209.pdf | 8-PowerVDFN | 5.9944mm | 838.2μm | 5mm | Lead Free | 5 | 12 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | 260 | 30 | 3.6W | 1 | FET General Purpose Power | R-PDSO-N5 | 7.2 ns | 9.7ns | 6.5 ns | 21 ns | 100A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 3.6W Ta 104W Tc | 55A | 220A | 100V | N-Channel | 2570pF @ 25V | 14.9m Ω @ 33A, 10V | 4V @ 100μA | 10A Ta 55A Tc | 59nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| STL7N6LF3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ F3 | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stl7n6lf3-datasheets-6257.pdf | 8-PowerVDFN | 12 Weeks | 8 | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STL7 | NOT SPECIFIED | 20A | 60V | 4.3W Ta 52W Tc | N-Channel | 432pF @ 25V | 43m Ω @ 3A, 10V | 2.5V @ 250μA | 20A Tc | 8.7nC @ 10V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSP613PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2003 | /files/infineontechnologies-bsp613ph6327xtsa1-datasheets-5380.pdf | -60V | -2.9A | TO-261-4, TO-261AA | 40mm | 1.5mm | 40mm | Contains Lead | 10 Weeks | 4 | Tin | Halogen Free | 1 | Single | 1.8W | 1 | PG-SOT223-4 | 875pF | 6.7 ns | 9ns | 7 ns | 26 ns | 2.9A | 20V | -60V | 60V | 1.8W Ta | 110mOhm | -60V | P-Channel | 875pF @ 25V | 130mOhm @ 2.9A, 10V | 4V @ 1mA | 2.9A Ta | 33nC @ 10V | 130 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| NVMFS5C638NLT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvmfs5c638nlt1g-datasheets-7253.pdf | 8-PowerTDFN, 5 Leads | 5 Weeks | ACTIVE (Last Updated: 1 day ago) | yes | e3 | Tin (Sn) | 260 | 30 | 60V | 4W Ta 100W Tc | N-Channel | 2880pF @ 25V | 3m Ω @ 50A, 10V | 2V @ 250μA | 26A Ta 133A Tc | 40.7nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD50N10S3L16ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-ipd50n10s3l16atma1-datasheets-7287.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 14 Weeks | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 10 ns | 5ns | 29 ns | 50A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 100W Tc | 200A | 0.0199Ohm | N-Channel | 4180pF @ 25V | 15m Ω @ 50A, 10V | 2.4V @ 60μA | 50A Tc | 64nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| RFD16N06LESM9A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-rfd16n06lesm9a-datasheets-7010.pdf | 60V | 16A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 260.37mg | No SVHC | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | GULL WING | Single | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 11 ns | 60ns | 35 ns | 48 ns | 16mA | 10V | SILICON | DRAIN | SWITCHING | 3V | 90W Tc | TO-252AA | 0.047Ohm | 60V | N-Channel | 1350pF @ 25V | 47m Ω @ 16A, 5V | 3V @ 250μA | 16A Tc | 62nC @ 10V | 5V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||
| DMT6004LPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmt6004lps13-datasheets-7379.pdf | 8-PowerTDFN | 5 | 22 Weeks | 8 | EAR99 | HIGH RELIABILITY | not_compliant | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 90A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 105W Tc | 22A | 100A | 160 mJ | N-Channel | 4515pF @ 30V | 2.8m Ω @ 25A, 10V | 3V @ 250μA | 22A Ta 90A Tc | 96.3nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN4R0-60YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Cut Tape (CT) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/nexperiausainc-psmn4r060ys115-datasheets-6878.pdf | SC-100, SOT-669 | 12 Weeks | LFPAK56, Power-SO8 | 3.501nF | 74A | 60V | 130W Tc | N-Channel | 3501pF @ 30V | 4mOhm @ 15A, 10V | 4V @ 1mA | 74A Tc | 56nC @ 10V | 4 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18503Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 3 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | 260 | CSD18503 | 1 | Single | 3.1W | 1 | FET General Purpose Power | 150°C | 4.5 ns | 8.8ns | 2.6 ns | 15 ns | 19A | 20V | SILICON | DRAIN | SWITCHING | 1.8V | 3.1W Ta 120W Tc | 0.0062Ohm | 40V | N-Channel | 2640pF @ 20V | 4.3m Ω @ 22A, 10V | 2.3V @ 250μA | 19A Ta 100A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| TPH3R70APL,L1Q | Toshiba Semiconductor and Storage |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 12 Weeks | 100V | 960mW Ta 170W Tc | N-Channel | 6300pF @ 50V | 3.7m Ω @ 45A, 10V | 2.5V @ 1mA | 90A Tc | 67nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMT10H010LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt10h010lss13-datasheets-6987.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | AEC-Q101 | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-G8 | 29.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 1.4W Ta | 11.5A | 75A | 0.0095Ohm | 61.5 mJ | N-Channel | 3000pF @ 50V | 9.5m Ω @ 13A, 10V | 2.8V @ 250μA | 11.5A Ta 29.5A Tc | 71nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| AON6294 | Alpha & Omega Semiconductor Inc. | $0.40 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | AlphaMOS | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-PowerSMD, Flat Leads | 5 | 18 Weeks | EAR99 | DUAL | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | 52A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 100V | 100V | 6.2W Ta 57W Tc | 80A | 0.014Ohm | 54 mJ | N-Channel | 2265pF @ 50V | 10m Ω @ 20A, 10V | 3.5V @ 250μA | 17A Ta 52A Tc | 40nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STD35NF06T4 | STMicroelectronics | $1.26 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std35nf06t4-datasheets-7236.pdf | 60V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 4.535924g | 20mOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | GULL WING | 260 | STD35 | 3 | Single | 30 | 55W | 1 | FET General Purpose Power | R-PSSO-G2 | 16 ns | 8ns | 15 ns | 36 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 80W Tc | TO-252AA | 60V | N-Channel | 1300pF @ 25V | 20m Ω @ 17.5A, 10V | 4V @ 250μA | 35A Tc | 60nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| FQU13N06LTU-WS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fqu13n06ltuws-datasheets-7246.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 3 | 10 Weeks | 343.08mg | 3 | ACTIVE (Last Updated: 1 day ago) | yes | No | e3 | Tin (Sn) | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 90ns | 40 ns | 20 ns | 11A | 20V | SILICON | SWITCHING | 2.5W Ta 28W Tc | 44A | 0.145Ohm | 90 mJ | 60V | N-Channel | 350pF @ 25V | 115m Ω @ 5.5A, 10V | 2.5V @ 250μA | 11A Tc | 6.4nC @ 5V | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| IRF7452TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf7452trpbf-datasheets-7023.pdf | 100V | 4.5A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Lead Free | 8 | 14 Weeks | No SVHC | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 2.5W | 1 | 9.5 ns | 11ns | 13 ns | 16 ns | 4.5A | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 5.5V | 2.5W Ta | 36A | 0.06Ohm | 200 mJ | 100V | N-Channel | 930pF @ 25V | 5.5 V | 60m Ω @ 2.7A, 10V | 5.5V @ 250μA | 4.5A Ta | 50nC @ 10V | 10V | ±30V |
