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MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 9.7mOhm @ 16.5A, 10V ±20V 2050pF @ 10V 28nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: Toshiba Semiconductor and Storage
- NO: 4669-TK33S10N1Z,LQ
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2741
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 9.7mOhm @ 16.5A, 10V ±20V 2050pF @ 10V 28nC @ 10V 100V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Supplier Device Package | DPAK+ |
| Weight | 3.949996g |
| Operating Temperature | 175°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2015 |
| Series | U-MOSVIII-H |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Technology | MOSFET (Metal Oxide) |
| Number of Channels | 1 |
| Power Dissipation-Max | 125W Tc |
| Element Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 9.7mOhm @ 16.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 500μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 33A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 10V |
| Drain to Source Voltage (Vdss) | 100V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 33A |
| Gate to Source Voltage (Vgs) | 10V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 2.05nF |
| Drain to Source Resistance | 9.7mOhm |
| Rds On Max | 9.7 mΩ |
| RoHS Status | RoHS Compliant |
