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MOSFET (Metal Oxide) N-Channel Tube 180m Ω @ 5A, 10V ±20V 520pF @ 25V 12nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA
- Manufacturer: ON Semiconductor
- NO: 598-FQU13N10LTU
- Package: TO-251-3 Short Leads, IPak, TO-251AA
- Datasheet:
- Stock: 3232
- Description: MOSFET (Metal Oxide) N-Channel Tube 180m Ω @ 5A, 10V ±20V 520pF @ 25V 12nC @ 5V TO-251-3 Short Leads, IPak, TO-251AA (Kg)
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| Parameters | |
|---|---|
| Resistance | 180MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 100V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 10A |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.5W Ta 40W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.5W |
| Turn On Delay Time | 7.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 180m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 520pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 10A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 5V |
| Rise Time | 220ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 72 ns |
| Turn-Off Delay Time | 22 ns |
| Continuous Drain Current (ID) | 10A |
| Threshold Voltage | 2V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Avalanche Energy Rating (Eas) | 95 mJ |
| Height | 6.1mm |
| Length | 6.6mm |
| Width | 2.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 5 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Number of Pins | 3 |
| Weight | 343.08mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2000 |
| Series | QFET® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
FQU13N10LTU Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been specially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched-mode power supplies, audio amplifiers, DC motor control, and variable switching power applications.
FQU13N10LTU Features
10 A, 100 V, RDS(on) = 180 m? (Max.) @ VGS = 10 V, ID = 5.0 A
Low Gate Charge (Typ. 8.7 nC)
Low Crss (Typ. 20 pF)
100% Avalanche Tested
Low-Level Gate Drive Requirement Allowing Direct Operation Form Logic Drivers
