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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | HTS Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IPD079N06L3GBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/infineontechnologies-ipd079n06l3gbtma1-datasheets-4672.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | LOGIC LEVEL COMPATIBLE | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 79W | 1 | Not Qualified | R-PSSO-G2 | 15 ns | 26ns | 7 ns | 37 ns | 50A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 79W Tc | TO-252AA | 200A | 0.0079Ohm | N-Channel | 4900pF @ 30V | 7.9m Ω @ 50A, 10V | 2.2V @ 34μA | 50A Tc | 29nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NVMFS5C670NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c670nlwfaft1g-datasheets-4576.pdf | 8-PowerTDFN, 5 Leads | 5 | 6 Weeks | ACTIVE (Last Updated: 19 hours ago) | yes | not_compliant | e3 | Tin (Sn) | YES | DUAL | FLAT | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 61W Tc | 440A | 0.0088Ohm | 166 mJ | N-Channel | 1400pF @ 25V | 6.1m Ω @ 35A, 10V | 2V @ 53μA | 17A Ta 71A Tc | 20nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD90N04S405ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-ipd90n04s405atma1-datasheets-4650.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 16 Weeks | 3 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | 9 ns | 11ns | 10 ns | 7 ns | 86A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 65W Tc | 0.0052Ohm | 77 mJ | N-Channel | 2960pF @ 25V | 5.2m Ω @ 86A, 10V | 4V @ 30μA | 86A Tc | 37nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| SI3483CDV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TA | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3483cdvt1ge3-datasheets-4261.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | No SVHC | 6 | yes | EAR99 | No | Pure Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 10 ns | 30 ns | -8A | 20V | SILICON | SWITCHING | 30V | 30V | -3V | 2W Ta 4.2W Tc | 8A | 0.034Ohm | P-Channel | 1000pF @ 15V | -3 V | 34m Ω @ 6.1A, 10V | 3V @ 250μA | 8A Tc | 33nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| FCH22N60N | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SupreMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/onsemiconductor-fch22n60n-datasheets-4563.pdf | TO-247-3 | 15.95mm | 21mm | 5.03mm | Lead Free | 3 | 13 Weeks | 6.39g | No SVHC | 3 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | Single | NOT SPECIFIED | 205W | 1 | FET General Purpose Power | Not Qualified | 16.9 ns | 16.7ns | 4 ns | 49 ns | 22A | 30V | SILICON | SWITCHING | 3V | 205W Tc | 66A | 672 mJ | 600V | N-Channel | 1950pF @ 100V | 165m Ω @ 11A, 10V | 4V @ 250μA | 22A Tc | 45nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| PSMN022-30BL,118 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn02230bl118-datasheets-4571.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | 2 | 12 Weeks | 3 | Tin | No | e3 | YES | GULL WING | 3 | Single | 41W | 1 | R-PSSO-G2 | 12 ns | 29ns | 7 ns | 17 ns | 30A | 20V | 30V | SILICON | DRAIN | SWITCHING | 41W Tc | 0.0296Ohm | 7 mJ | 30V | N-Channel | 447pF @ 15V | 22.6m Ω @ 5A, 10V | 2.15V @ 1mA | 30A Tc | 9nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI3430DV-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/vishaysiliconix-si3430dvt1e3-datasheets-4579.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 170mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 40 | 1.14W | 1 | FET General Purpose Power | 9 ns | 11ns | 11 ns | 16 ns | 1.8A | 20V | SILICON | 2V | 1.14W Ta | 100V | N-Channel | 2 V | 170m Ω @ 2.4A, 10V | 2V @ 250μA (Min) | 1.8A Ta | 6.6nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRLP3034PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlp3034pbf-datasheets-4583.pdf | TO-247-3 | 15.87mm | 20.7mm | 5.3086mm | 3 | 12 Weeks | No SVHC | 3 | EAR99 | No | Single | 341W | 1 | 65 ns | 827ns | 355 ns | 97 ns | 327A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 341W Tc | TO-247AC | 195A | 0.0017Ohm | 224 mJ | 40V | N-Channel | 10315pF @ 25V | 1.7m Ω @ 195A, 10V | 2.5V @ 250μA | 195A Tc | 162nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IPA90R340C3XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipa90r340c3xksa1-datasheets-4595.pdf | TO-220-3 Full Pack | Lead Free | 3 | 7 Weeks | 3 | yes | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 35W | 1 | 70 ns | 20ns | 25 ns | 400 ns | 15A | 30V | 900V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 678 mJ | N-Channel | 2400pF @ 100V | 340m Ω @ 9.2A, 10V | 3.5V @ 1mA | 15A Tc | 94nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| STF13N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13n80k5-datasheets-4306.pdf | TO-220-3 Full Pack | 10.6mm | 20mm | 4.6mm | Lead Free | 3 | 17 Weeks | 3 | EAR99 | No | TO-220FP-7012510 | STF13 | 1 | Single | 35W | 1 | 150°C | 16 ns | 16ns | 16 ns | 42 ns | 12A | 30V | SILICON | ISOLATED | SWITCHING | 35W Tc | TO-220AB | 48A | 0.45Ohm | 800V | N-Channel | 870pF @ 100V | 450m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||
| SIA421DJ-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-sia421djt1ge3-datasheets-4610.pdf | PowerPAK® SC-70-6 | 2.05mm | 750μm | 2.05mm | Lead Free | 3 | 14 Weeks | Unknown | 83MOhm | 6 | yes | EAR99 | No | DUAL | 260 | 6 | 1 | Single | 40 | 3.5W | 1 | Other Transistors | S-XDSO-N3 | 40 ns | 110ns | 12 ns | 30 ns | -12A | 20V | SILICON | DRAIN | SWITCHING | 30V | -3V | 3.5W Ta 19W Tc | 7.9A | 35A | -30V | P-Channel | 950pF @ 15V | -3 V | 35m Ω @ 5.3A, 10V | 3V @ 250μA | 12A Tc | 29nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IPW60R099P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipw60r099p7xksa1-datasheets-4614.pdf | TO-247-3 | 3 | 18 Weeks | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 117W Tc | 100A | 0.099Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 31A Tc | 45nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ486EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqj486ept1ge3-datasheets-4622.pdf | 8-PowerTDFN | 4 | 12 Weeks | EAR99 | unknown | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G4 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 75V | 75V | 56W Tc | 30A | 120A | 0.026Ohm | 9 mJ | N-Channel | 1386pF @ 15V | 26m Ω @ 51A, 10V | 2.1V @ 250μA | 30A Tc | 34nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y3R5-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/nexperiausainc-buk7y3r540hx-datasheets-4624.pdf | SC-100, SOT-669 | 12 Weeks | 4 | 40V | 115W Ta | N-Channel | 3441pF @ 25V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 120A Ta | 53nC @ 10V | 10V | +20V, -10V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BUK7Y3R5-40E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-buk7y3r540e115-datasheets-4658.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 4 | 1 | 13.6 ns | 24.9ns | 20.4 ns | 30 ns | 100A | 20V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 167W Tc | MO-235 | 622A | 0.0035Ohm | 135 mJ | N-Channel | 3583pF @ 25V | 3.5m Ω @ 25A, 10V | 4V @ 1mA | 100A Tc | 49.4nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IRFB4137PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-irfb4137pbf-datasheets-4533.pdf | TO-220-3 | 10.67mm | 9.02mm | 4.83mm | Lead Free | 12 Weeks | No SVHC | 69MOhm | 3 | EAR99 | No | Single | 341W | 1 | FET General Purpose Power | 18 ns | 23ns | 20 ns | 34 ns | 38A | 20V | 5V | 341W Tc | 300V | N-Channel | 5168pF @ 50V | 69m Ω @ 24A, 10V | 5V @ 250μA | 38A Tc | 125nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP111N15N3GXKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp111n15n3gxksa1-datasheets-4542.pdf | TO-220-3 | 3 | 13 Weeks | yes | EAR99 | e3 | Tin (Sn) | NO | SINGLE | NOT SPECIFIED | 3 | NOT SPECIFIED | 1 | Not Qualified | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 150V | 150V | 214W Tc | TO-220AB | 83A | 332A | 0.0111Ohm | 330 mJ | N-Channel | 3230pF @ 75V | 11.1m Ω @ 83A, 10V | 4V @ 160μA | 83A Tc | 55nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IRFB3004PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-irfs3004trlpbf-datasheets-2716.pdf | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.75MOhm | 3 | EAR99 | Tin | No | Single | 380W | 1 | 23 ns | 220ns | 130 ns | 90 ns | 340A | 20V | SILICON | DRAIN | SWITCHING | 4V | 380W Tc | TO-220AB | 40V | N-Channel | 9200pF @ 25V | 1.75m Ω @ 195A, 10V | 4V @ 250μA | 195A Tc | 240nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STP13N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stw13n80k5-datasheets-4306.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | 3 | 17 Weeks | 3 | EAR99 | No | STP13N | Single | 190W | 1 | 16 ns | 16ns | 16 ns | 42 ns | 12A | 30V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-220AB | 48A | 0.45Ohm | 800V | N-Channel | 870pF @ 100V | 450m Ω @ 6A, 10V | 5V @ 100μA | 12A Tc | 29nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| IXTP01N100D | IXYS / Littelfuse |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | Not Applicable | MOSFET (Metal Oxide) | ROHS3 Compliant | 2001 | /files/ixys-ixty01n100d-datasheets-0137.pdf | 1kV | 4A | TO-220-3 | Lead Free | 3 | 8 Weeks | 3 | yes | EAR99 | No | e3 | PURE TIN | 3 | Single | 1.1W | 1 | FET General Purpose Power | 6ns | 30 ns | 100mA | 20V | SILICON | DRAIN | SWITCHING | 1000V | 1.1W Ta 25W Tc | TO-220AD | 1kV | N-Channel | 120pF @ 25V | 110 Ω @ 50mA, 0V | 100mA Tc | Depletion Mode | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| STP15N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH5™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp15n80k5-datasheets-4469.pdf | TO-220-3 | 10.4mm | 15.75mm | 4.6mm | Lead Free | 3 | 17 Weeks | 375mOhm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Tin (Sn) | STP15N | Single | 190W | 1 | FET General Purpose Power | 19 ns | 17.6ns | 10 ns | 44 ns | 14A | 30V | SILICON | DRAIN | SWITCHING | 190W Tc | TO-220AB | 56A | 800V | N-Channel | 1100pF @ 100V | 375m Ω @ 7A, 10V | 5V @ 100μA | 14A Tc | 32nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||
| STFW3N170 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stfw3n170-datasheets-4473.pdf | ISOWATT218FX | Lead Free | 3 | 8 Weeks | ACTIVE (Last Updated: 7 months ago) | EAR99 | SINGLE | STFW | 1 | FET General Purpose Powers | R-PSFM-T3 | 2.6A | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 1700V | 1700V | 63W Tc | 2.3A | 10.4A | 2 mJ | N-Channel | 1100pF @ 100V | 13 Ω @ 1.3A, 10V | 5V @ 250μA | 2.6A Tc | 44nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125CFD7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipa60r125cfd7xksa1-datasheets-4476.pdf | TO-220-3 Full Pack | 18 Weeks | NOT SPECIFIED | NOT SPECIFIED | 600V | 32W Tc | N-Channel | 1503pF @ 400V | 125m Ω @ 7.8A, 10V | 4.5V @ 390μA | 11A Tc | 36nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFP22N50APBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2008 | /files/vishaysiliconix-irfp22n50apbf-datasheets-4479.pdf | 500V | 22A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 12 Weeks | 38.000013g | Unknown | 230mOhm | 3 | No | 1 | Single | 277W | 1 | TO-247-3 | 3.45nF | 26 ns | 94ns | 47 ns | 47 ns | 22A | 30V | 500V | 4V | 277W Tc | 850 ns | 230mOhm | 500V | N-Channel | 3450pF @ 25V | 2 V | 230mOhm @ 13A, 10V | 4V @ 250μA | 22A Tc | 120nC @ 10V | 230 mΩ | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| IRFP460BPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1995 | /files/vishaysiliconix-irfp460bpbf-datasheets-4496.pdf | TO-247-3 | 3 | 8 Weeks | 38.000013g | No SVHC | 3 | No | e3 | MATTE TIN OVER NICKEL | 1 | Single | 278W | 1 | 24 ns | 31ns | 56 ns | 117 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 4V | 278W Tc | TO-247AC | 62A | 0.25Ohm | 500V | N-Channel | 3094pF @ 100V | 250m Ω @ 10A, 10V | 4V @ 250μA | 20A Tc | 170nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPP60R099P7XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipp60r099p7xksa1-datasheets-4502.pdf | TO-220-3 | 3 | 18 Weeks | EAR99 | NO | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSFM-T3 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 117W Tc | TO-220AB | 100A | 0.099Ohm | 105 mJ | N-Channel | 1952pF @ 400V | 99m Ω @ 10.5A, 10V | 4V @ 530μA | 31A Tc | 45nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| FCP067N65S3 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperFET® III | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-fcp067n65s3-datasheets-4508.pdf | TO-220-3 | 12 Weeks | 1.8g | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | 8541.29.00.95 | e3 | Tin (Sn) | Single | 44A | 650V | 4.5V | 312W Tc | N-Channel | 3090pF @ 400V | 67m Ω @ 22A, 10V | 4.5V @ 4.4mA | 44A Tc | 78nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPP030N10N5AKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipp030n10n5aksa1-datasheets-4520.pdf | TO-220-3 | Contains Lead | 3 | 13 Weeks | 6.000006g | yes | Halogen Free | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSFM-T3 | 25 ns | 15ns | 17 ns | 52 ns | 120A | 20V | 100V | SILICON | DRAIN | SWITCHING | 250W Tc | TO-220AB | 480A | 0.003Ohm | 100V | N-Channel | 10300pF @ 50V | 3m Ω @ 100A, 10V | 3.8V @ 184μA | 120A Tc | 139nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||
| IPP60R190P6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P6 | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipp60r190p6xksa1-datasheets-4526.pdf | TO-220-3 | Lead Free | 3 | 18 Weeks | 3 | e3 | Matte Tin (Sn) | Halogen Free | SINGLE | NOT SPECIFIED | NOT SPECIFIED | 151W | 1 | 15 ns | 8ns | 7 ns | 45 ns | 20.2A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 151W Tc | TO-220AB | 57A | N-Channel | 1750pF @ 100V | 190m Ω @ 7.6A, 10V | 4.5V @ 630μ | 20.2A Tc | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFPG50PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2011 | /files/vishaysiliconix-irfpg50pbf-datasheets-4430.pdf | 1kV | 6.1A | TO-247-3 | 15.87mm | 20.7mm | 5.31mm | Lead Free | 8 Weeks | 38.000013g | Unknown | 2Ohm | 3 | No | 1 | Single | 190W | 1 | TO-247-3 | 2.8nF | 19 ns | 35ns | 36 ns | 130 ns | 6.1A | 20V | 1000V | 4V | 190W Tc | 950 ns | 2Ohm | 1kV | N-Channel | 2800pF @ 25V | 4 V | 2Ohm @ 3.6A, 10V | 4V @ 250μA | 6.1A Tc | 190nC @ 10V | 2 Ω | 10V | ±20V |
