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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| IRL60B216 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET®, StrongIRFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | TO-220-3 | 10.67mm | 16.51mm | 4.83mm | Lead Free | 3 | 12 Weeks | Unknown | 3 | EAR99 | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 70 ns | 190 ns | 195A | 20V | SILICON | SWITCHING | 60V | 60V | 2.4V | 375W Tc | TO-220AB | 780A | 0.0019Ohm | 1045 mJ | N-Channel | 15570pF @ 25V | 1.9m Ω @ 100A, 10V | 2.4V @ 250μA | 195A Tc | 258nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| FDP083N15A-F102 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdp083n15af102-datasheets-5278.pdf | TO-220-3 | 9 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | NO | FET General Purpose Power | Single | 150V | 294W Tc | 105A | N-Channel | 6040pF @ 25V | 8.3m Ω @ 75A, 10V | 4V @ 250μA | 83A Tc | 84nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS98DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | ThunderFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss98dnt1ge3-datasheets-4984.pdf | PowerPAK® 1212-8 | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 200V | 57W Tc | N-Channel | 608pF @ 100V | 105m Ω @ 7A, 10V | 4V @ 250μA | 14.1A Tc | 14nC @ 7.5V | 7.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD16404Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 1 day ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16404 | 8 | Single | 3W | 1 | FET General Purpose Power | 7.8 ns | 13.4ns | 4.6 ns | 8.4 ns | 81A | 16V | 25V | SILICON | DRAIN | SWITCHING | 1.8V | 3W Ta | 0.0072Ohm | 25V | N-Channel | 1220pF @ 12.5V | 1.8 V | 5.1m Ω @ 20A, 10V | 2.1V @ 250μA | 21A Ta 81A Tc | 8.5nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||
| IXFY30N25X3 | IXYS | $5.92 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HiPerFET™ | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/ixys-ixfy30n25x3-datasheets-4884.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 19 Weeks | 250V | 176W Tc | N-Channel | 1450pF @ 25V | 60m Ω @ 15A, 10V | 4.5V @ 500μA | 30A Tc | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STW18N65M5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ V | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-stw18n65m5-datasheets-4903.pdf | TO-247-3 | Lead Free | 3 | 17 Weeks | EAR99 | No | STW18N | Single | 110W | 1 | R-PSFM-T3 | 7ns | 9 ns | 15A | 25V | SILICON | DRAIN | SWITCHING | 110W Tc | 60A | 0.22Ohm | 210 mJ | 650V | N-Channel | 1240pF @ 100V | 220m Ω @ 7.5A, 10V | 5V @ 250μA | 15A Tc | 31nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPD33CN10NGATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-ipd33cn10ngatma1-datasheets-4878.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Contains Lead | 2 | 18 Weeks | 3 | yes | not_compliant | e3 | Tin (Sn) | Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 58W | 1 | R-PSSO-G2 | 11 ns | 21ns | 4 ns | 17 ns | 27A | 20V | 100V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 58W Tc | TO-252AA | 108A | 47 mJ | N-Channel | 1570pF @ 50V | 33m Ω @ 27A, 10V | 4V @ 29μA | 27A Tc | 24nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| BUK9Y3R0-40E,115 | Nexperia USA Inc. | $1.34 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y3r040e115-datasheets-4922.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | AVALANCHE RATED | Tin | not_compliant | e3 | YES | SINGLE | GULL WING | 4 | 1 | 1 | 24 ns | 44ns | 34 ns | 53 ns | 100A | 10V | 40V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 194W Tc | MO-235 | 0.003Ohm | 40V | N-Channel | 5962pF @ 25V | 2.5m Ω @ 25A, 10V | 2.1V @ 1mA | 100A Tc | 35.5nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| NCV8440ASTT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ncv8440astt1g-datasheets-4947.pdf | TO-261-4, TO-261AA | Lead Free | 4 | 13 Weeks | 4 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | GULL WING | 4 | 1.69W | 1 | FET General Purpose Power | 2.6A | 15V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 59V | 52V | 1.69W Ta | N-Channel | 155pF @ 35V | 110m Ω @ 2.6A, 10V | 1.9V @ 100μA | 2.6A Ta | 4.5nC @ 4.5V | 3.5V 10V | ±15V | ||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA10DP-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-sira10dpt1ge3-datasheets-4854.pdf | PowerPAK® SO-8 | 6.25mm | 1.12mm | 5.26mm | 5 | 14 Weeks | 506.605978mg | Unknown | 8 | EAR99 | Tin | No | DUAL | FLAT | 1 | Single | 5W | 1 | R-PDSO-F5 | 20 ns | 20 ns | 27 ns | 30A | 20V | SILICON | DRAIN | SWITCHING | 1.1V | 5W Ta 40W Tc | 60A | 0.0037Ohm | 20 mJ | 30V | N-Channel | 2425pF @ 15V | 3.7m Ω @ 10A, 10V | 2.2V @ 250μA | 60A Tc | 51nC @ 10V | 4.5V 10V | +20V, -16V | |||||||||||||||||||||||||||||||||||||||||
| ZVP2110GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zvp2110gta-datasheets-4965.pdf | -100V | -350mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 8Ohm | 4 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | 7 ns | 15ns | 15 ns | 12 ns | 310mA | 20V | SILICON | DRAIN | SWITCHING | 100V | 2W Ta | 3A | -100V | P-Channel | 100pF @ 25V | 8 Ω @ 375mA, 10V | 3.5V @ 1mA | 310mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| NVMFS5C450NLWFAFT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount, Wettable Flank | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/onsemiconductor-nvmfs5c450nlwfaft1g-datasheets-4970.pdf | 8-PowerTDFN, 5 Leads | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | yes | not_compliant | e3 | Tin (Sn) | 40V | 68W Tc | N-Channel | 2100pF @ 20V | 2.8m Ω @ 40A, 10V | 2V @ 250μA | 110A Tc | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A25GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a25gta-datasheets-4992.pdf | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 50mOhm | 4 | no | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | 40 | 3.9W | 1 | 3.8 ns | 4ns | 10.6 ns | 26.2 ns | 6.7A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2W Ta | 28.5A | 60V | N-Channel | 1063pF @ 30V | 50m Ω @ 3.6A, 10V | 1V @ 250μA | 4.8A Ta | 20.4nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| IRFR9220TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | Tin | No | 1 | Single | 2.5W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | 3.6A | 20V | 200V | -2V | 2.5W Ta 42W Tc | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | -2 V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| NDP7060 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -65°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1998 | /files/onsemiconductor-ndp7060-datasheets-5032.pdf | 60V | 75A | TO-220-3 | 10.67mm | 16.3mm | 4.7mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 13mOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 150W | 1 | FET General Purpose Power | 17 ns | 128ns | 90 ns | 54 ns | 75A | 20V | SILICON | SWITCHING | 2.8V | 150W Tc | TO-220AB | 225A | 550 mJ | 60V | N-Channel | 3600pF @ 25V | 2.8 V | 13m Ω @ 40A, 10V | 4V @ 250μA | 75A Tc | 115nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| BSZ900N15NS3GATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/infineontechnologies-bsz900n15ns3gatma1-datasheets-5043.pdf | 8-PowerTDFN | Contains Lead | 5 | 18 Weeks | 8 | no | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | 8 | 38W | 1 | Not Qualified | S-PDSO-N5 | 4 ns | 3 ns | 8 ns | 13A | 20V | 150V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 38W Tc | 52A | 0.09Ohm | 30 mJ | N-Channel | 510pF @ 75V | 90m Ω @ 10A, 10V | 4V @ 20μA | 13A Tc | 7nC @ 10V | 8V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| FDMC2523P | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdmc2523p-datasheets-5005.pdf | -150V | -3A | 8-PowerWDFN | 3mm | 800μm | 3mm | Lead Free | 5 | 10 Weeks | 210mg | No SVHC | 1.5Ohm | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Tin | No | e4 | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | DUAL | FLAT | 1 | Single | 42W | 1 | Other Transistors | 150°C | S-PDSO-F5 | 15 ns | 11ns | 13 ns | 19 ns | 3A | 30V | SILICON | DRAIN | SWITCHING | 150V | 3.8V | 42W Tc | 3A | -150V | P-Channel | 270pF @ 25V | 1.5 Ω @ 1.5A, 10V | 5V @ 250μA | 3A Tc | 9nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||
| DMT10H015LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmt10h015lfg7-datasheets-4863.pdf | 8-PowerVDFN | 23 Weeks | 8 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 42A | 100V | 2W Ta 35W Tc | N-Channel | 1871pF @ 50V | 13.5m Ω @ 20A, 10V | 3.5V @ 250μA | 10A Ta 42A Tc | 33.3nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJA84EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja84ept1ge3-datasheets-4713.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 1 | 55W | 1 | 175°C | R-PSSO-G4 | 11 ns | 23 ns | 46A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 55W Tc | 36 mJ | 80V | N-Channel | 2100pF @ 25V | 12.5m Ω @ 10A, 10V | 2.5V @ 250μA | 46A Tc | 35nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPA60R125C6XKSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/infineontechnologies-ipa60r125c6xksa1-datasheets-4733.pdf | TO-220-3 Full Pack | Lead Free | 3 | 12 Weeks | 3 | yes | No | e3 | Tin (Sn) | Halogen Free | SINGLE | 3 | 34W | 1 | 15 ns | 12ns | 7 ns | 83 ns | 30A | 20V | 600V | SILICON | SINGLE WITH BUILT-IN DIODE | ISOLATED | SWITCHING | 34W Tc | TO-220AB | 89A | N-Channel | 2127pF @ 100V | 125m Ω @ 14.5A, 10V | 3.5V @ 960μA | 30A Tc | 96nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| STP25N60M2-EP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ M2-EP | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp25n60m2ep-datasheets-4740.pdf | TO-220-3 | 16 Weeks | ACTIVE (Last Updated: 8 months ago) | EAR99 | NOT SPECIFIED | STP25N | NOT SPECIFIED | 18A | 600V | 150W Tc | N-Channel | 1090pF @ 100V | 188m Ω @ 9A, 10V | 4.75V @ 250μA | 18A Tc | 29nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3499DV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si3499dvt1ge3-datasheets-4647.pdf | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 14 Weeks | 19.986414mg | Unknown | 23mOhm | 6 | Tin | No | 1 | Single | 1.1W | 1 | 6-TSOP | 27 ns | 65ns | 110 ns | 210 ns | -7A | 5V | 8V | -350mV | 1.1W Ta | 23mOhm | P-Channel | -350 mV | 23mOhm @ 7A, 4.5V | 750mV @ 250μA | 5.3A Ta | 42nC @ 4.5V | 23 mΩ | 1.5V 4.5V | ±5V | ||||||||||||||||||||||||||||||||||||||||||||||||
| RQ1A070ZPTR | ROHM Semiconductor | $1.02 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | 8-SMD, Flat Lead | 3mm | 800μm | 2.8mm | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 8 | Single | 10 | 1 | Other Transistors | 35 ns | 95ns | 190 ns | 310 ns | 7A | 10V | SILICON | SWITCHING | 12V | 12V | 700mW Ta | 7A | 0.012Ohm | P-Channel | 7400pF @ 6V | 12m Ω @ 7A, 4.5V | 1V @ 1mA | 7A Ta | 58nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| IRLI640GPBF | Vishay Siliconix | $1.36 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2009 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irli640gpbf-datasheets-4754.pdf | TO-220-3 Full Pack, Isolated Tab | 10.63mm | 9.8mm | 4.83mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 180mOhm | 3 | No | 200V | 1 | Single | 40W | 1 | TO-220-3 | 1.8nF | 8 ns | 83ns | 52 ns | 44 ns | 9.9A | 10V | 200V | 200V | 2V | 40W Tc | 180mOhm | 200V | N-Channel | 1800pF @ 25V | 2 V | 180mOhm @ 5.9A, 5V | 2V @ 250μA | 9.9A Tc | 66nC @ 10V | 180 mΩ | 4V 5V | ±10V | |||||||||||||||||||||||||||||||||||||||||
| IPD70R360P7SAUMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ P7 | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/infineontechnologies-ipd70r360p7sauma1-datasheets-4760.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 700V | 59.4W Tc | N-Channel | 517pF @ 400V | 360m Ω @ 3A, 10V | 3.5V @ 150μA | 12.5A Tc | 16.4nC @ 10V | 10V | ±16V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOT42S60L | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | aMOS™ | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | TO-220-3 | Lead Free | 16 Weeks | FET General Purpose Power | 37A | Single | 600V | 417W Tc | N-Channel | 2154pF @ 100V | 99m Ω @ 21A, 10V | 3.8V @ 250μA | 37A Tc | 40nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19506KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | 6.000006g | No SVHC | 3 | ACTIVE (Last Updated: 6 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | CSD19506 | 3 | 1 | Single | NOT SPECIFIED | 1 | FET General Purpose Power | 19 ns | 11ns | 10 ns | 30 ns | 273A | 20V | SILICON | DRAIN | SWITCHING | 80V | 80V | 2.5V | 375W Tc | 0.0028Ohm | 55 pF | N-Channel | 12200pF @ 40V | 2.3m Ω @ 100A, 10V | 3.2V @ 250μA | 100A Ta | 156nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||
| STD2HNK60Z | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq2hnk60zrap-datasheets-8947.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 12 Weeks | 4.8Ohm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD2HNK | 3 | Single | 30 | 45W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 30ns | 50 ns | 13 ns | 2A | 30V | SILICON | SWITCHING | 45W Tc | TO-252AA | 2A | 8A | 600V | N-Channel | 280pF @ 25V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 2A Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||
| SI7309DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/vishaysiliconix-si7309dnt1ge3-datasheets-4775.pdf | PowerPAK® 1212-8 | Lead Free | 5 | 14 Weeks | Unknown | 115MOhm | 8 | yes | EAR99 | Tin | No | e3 | DUAL | C BEND | 260 | 8 | 1 | Single | 40 | 3.2W | 1 | Other Transistors | S-XDSO-C5 | 10 ns | 15ns | 33 ns | 30 ns | -8A | 20V | SILICON | DRAIN | SWITCHING | 60V | -3V | 3.2W Ta 19.8W Tc | 3.9A | 20A | -60V | P-Channel | 600pF @ 30V | 115m Ω @ 3.9A, 10V | 3V @ 250μA | 8A Tc | 22nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| FDMA7632 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdma7632-datasheets-4796.pdf | 6-VDFN Exposed Pad | 2mm | 850μm | 2mm | 6 | 16 Weeks | 30mg | No SVHC | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 1 | Single | 900mW | 1 | FET General Purpose Power | 150°C | 6 ns | 2ns | 2 ns | 14 ns | 9A | 20V | SILICON | DRAIN | SWITCHING | 1V | 2.4W Ta | 9A | 40 pF | 30V | N-Channel | 760pF @ 15V | 2.1 V | 19m Ω @ 9A, 10V | 3V @ 250μA | 9A Ta | 13nC @ 10V | 4.5V 10V | ±20V |
