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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Material | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Wire Gauge (Max) | Wire Gauge (Min) | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Plating | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STB80NF55-06T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount, Through Hole | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp80nf5506-datasheets-0377.pdf | 55V | 80A | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 10.4mm | 9.35mm | 4.6mm | Lead Free | 2 | 12 Weeks | No SVHC | 6.5mOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 245 | STB80N | 3 | Single | 30 | 300W | 1 | FET General Purpose Power | R-PSSO-G2 | 27 ns | 155ns | 65 ns | 125 ns | 80A | 20V | 55V | SILICON | DRAIN | SWITCHING | 3V | 300W Tc | 55V | N-Channel | 4400pF @ 25V | 3 V | 6.5m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 189nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| IRLB3813PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-irlb3813pbf-datasheets-2159.pdf | TO-220-3 | 10.668mm | 9.02mm | 4.826mm | Lead Free | 3 | 12 Weeks | No SVHC | 1.95MOhm | 3 | EAR99 | Tin | No | Single | 230W | 1 | FET General Purpose Power | 36 ns | 170ns | 60 ns | 33 ns | 260A | 20V | 30V | SILICON | DRAIN | SWITCHING | 1.9V | 230W Tc | TO-220AB | 36 ns | 120A | 1050A | 520 mJ | 30V | N-Channel | 8420pF @ 15V | 1.9 V | 1.95m Ω @ 60A, 10V | 2.35V @ 150μA | 260A Tc | 86nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| STD7NM80 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std7nm80-datasheets-2102.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | 16 Weeks | No SVHC | 1.05Ohm | 3 | ACTIVE (Last Updated: 8 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD7 | 3 | Single | 30 | 90W | 1 | FET General Purpose Power | R-PSSO-G2 | 20 ns | 8ns | 10 ns | 35 ns | 6.5A | 30V | 800V | SILICON | ISOLATED | SWITCHING | 4V | 90W Tc | 26A | 240 mJ | 800V | N-Channel | 620pF @ 25V | 4 V | 1.05 Ω @ 3.25A, 10V | 5V @ 250μA | 6.5A Tc | 18nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| PSMN1R5-30BLEJ | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | Crimp | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/nexperiausainc-psmn1r530blej-datasheets-1962.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Lead Free | Brass | 2 | 12 Weeks | 3.949996g | 3 | No | YES | GULL WING | 3 | 1 | Single | 1 | R-PSSO-G2 | 100.6 ns | 156.1ns | 99.2 ns | 191.8 ns | 120A | 20V | 30V | DRAIN | SWITCHING | 24 AWG | 20 AWG | 401W Tc | Gold, Tin | 30V | N-Channel | 14934pF @ 15V | 1.5m Ω @ 25A, 10V | 2.15V @ 1mA | 120A Tc | 228nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| STP5N80K5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | MDmesh™ | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/stmicroelectronics-stp5n80k5-datasheets-2039.pdf | TO-220-3 | Lead Free | 17 Weeks | ACTIVE (Last Updated: 7 months ago) | STP5N | 800V | 60W Tc | N-Channel | 177pF @ 100V | 1.75 Ω @ 2A, 10V | 5V @ 100μA | 4A Tc | 5nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC007N08LCDC | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-fdmc007n08lcdc-datasheets-1658.pdf | 8-PowerWDFN | 20 Weeks | ACTIVE (Last Updated: 3 days ago) | yes | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 80V | 57W Tc | N-Channel | 3070pF @ 40V | 6.8m Ω @ 22A, 10V | 2.5V @ 130μA | 64A Tc | 44nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STU6N62K3 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH3™ | Through Hole | Through Hole | 150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stu6n62k3-datasheets-2052.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.6mm | 6.9mm | 2.4mm | Lead Free | 3 | 12 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | ULTRA LOW-ON RESISTANCE | No | e3 | Matte Tin (Sn) - annealed | 260 | STU6N | 3 | Single | 90W | 1 | FET General Purpose Power | 22 ns | 12.5ns | 19 ns | 49 ns | 5.5A | 30V | SILICON | SWITCHING | 3.75V | 90W Tc | 22A | 620V | N-Channel | 875pF @ 50V | 1.2 Ω @ 2.8A, 10V | 4.5V @ 50μA | 5.5A Tc | 30nC @ 10V | 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||||||||||
| AOT240L | Alpha & Omega Semiconductor Inc. | $0.45 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | TO-220-3 | 16 Weeks | 176W | 1 | FET General Purpose Powers | 105A | 20V | Single | 40V | 1.9W Ta 176W Tc | N-Channel | 4300pF @ 20V | 2.9m Ω @ 20A, 10V | 2.2V @ 250μA | 20A Ta 105A Tc | 72nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3708PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2000 | /files/infineontechnologies-irf3708pbf-datasheets-1914.pdf | 30V | 62A | TO-220-3 | 10.5156mm | 8.763mm | 4.69mm | Lead Free | 3 | 14 Weeks | No SVHC | 12MOhm | 3 | EAR99 | No | Single | 87W | 1 | FET General Purpose Power | 7.2 ns | 50ns | 3.7 ns | 17.6 ns | 62A | 12V | 30V | SILICON | DRAIN | SWITCHING | 2V | 87W Tc | TO-220AB | 65 ns | 248A | 30V | N-Channel | 2417pF @ 15V | 2 V | 12m Ω @ 15A, 10V | 2V @ 250μA | 62A Tc | 24nC @ 4.5V | 2.8V 10V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLS640A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-irls640a-datasheets-1925.pdf | 200V | 9.8A | TO-220-3 Full Pack | Lead Free | 3 | 9 Weeks | 2.27g | 3 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e3 | Tin (Sn) | Single | 40W | 1 | FET General Purpose Power | 11 ns | 8ns | 15 ns | 46 ns | 9.8A | 20V | SILICON | ISOLATED | SWITCHING | 40W Tc | 64 mJ | 200V | N-Channel | 1705pF @ 25V | 180m Ω @ 4.9A, 5V | 2V @ 250μA | 9.8A Tc | 56nC @ 5V | 5V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRL3803VPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irl3803vpbf-datasheets-1931.pdf | 30V | 140A | TO-220-3 | 10.6426mm | 16.51mm | 4.82mm | Lead Free | 3 | 14 Weeks | No SVHC | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | Single | 200W | 1 | FET General Purpose Power | 16 ns | 180ns | 37 ns | 29 ns | 140A | 16V | SILICON | DRAIN | SWITCHING | 1V | 200W Tc | TO-220AB | 75A | 470A | 0.0055Ohm | 400 mJ | 30V | N-Channel | 3720pF @ 25V | 5.5m Ω @ 71A, 10V | 1V @ 250μA | 140A Tc | 76nC @ 4.5V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||||
| FQP50N06 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqp50n06-datasheets-1952.pdf&product=onsemiconductor-fqp50n06-6827980 | 60V | 50A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 1.8g | No SVHC | 22mOhm | 3 | ACTIVE, NOT REC (Last Updated: 3 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 120W | 1 | 15 ns | 105ns | 65 ns | 60 ns | 50A | 25V | SILICON | SWITCHING | 4V | 120W Tc | TO-220AB | 200A | 490 mJ | 60V | N-Channel | 1540pF @ 25V | 22m Ω @ 25A, 10V | 4V @ 250μA | 50A Tc | 41nC @ 10V | 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9220PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2006 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-irfr9220pbf-datasheets-1966.pdf | -200V | -3.6A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 8 Weeks | 1.437803g | Unknown | 1.5Ohm | 3 | No | 14A | 200V | 1 | Single | 42W | 1 | D-Pak | 340pF | 8.8 ns | 27ns | 19 ns | 7.3 ns | -3.6A | 20V | 200V | -4V | 2.5W Ta 42W Tc | 300 ns | 1.5Ohm | -200V | P-Channel | 340pF @ 25V | -4 V | 1.5Ohm @ 2.2A, 10V | 4V @ 250μA | 3.6A Tc | 20nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| IPB65R190CFDATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/infineontechnologies-ipb65r190cfdatma1-datasheets-1970.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 18 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 650V | 650V | 151W Tc | 17.5A | 57.2A | 0.19Ohm | 484 mJ | N-Channel | 1850pF @ 100V | 190m Ω @ 7.3A, 10V | 4.5V @ 730μA | 17.5A Tc | 68nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD18534KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | 6 Weeks | No SVHC | 3 | ACTIVE (Last Updated: 4 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED, LOGIC LEVEL COMPATIBLE | e3 | Matte Tin (Sn) | NOT SPECIFIED | CSD18534 | 1 | Single | NOT SPECIFIED | 107W | 1 | FET General Purpose Power | 175°C | 4.2 ns | 4.8ns | 2.4 ns | 10.4 ns | 73A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 107W Tc | 6.5 pF | 72 mJ | 60V | N-Channel | 1880pF @ 30V | 1.9 V | 9.5m Ω @ 40A, 10V | 2.3V @ 250μA | 45A Ta 100A Tc | 24nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZVN4310A | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-zvn4310a-datasheets-1984.pdf | 100V | 900mA | TO-226-3, TO-92-3 (TO-226AA) | 4.77mm | 6.51mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 500mOhm | 3 | no | EAR99 | No | E-Line | e3 | Matte Tin (Sn) | BOTTOM | WIRE | 260 | 3 | 1 | Single | 40 | 850mW | 1 | FET General Purpose Power | 150°C | 8 ns | 25ns | 25 ns | 30 ns | 900mA | 20V | SILICON | 3V | 850mW Ta | 0.9A | 100V | N-Channel | 350pF @ 25V | 500m Ω @ 3A, 10V | 3V @ 1mA | 900mA Ta | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| STP75NF75FP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stp75nf75-datasheets-9543.pdf | TO-220-3 Full Pack | 20mm | 3 | 12 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | STP75N | 3 | 1 | Single | 45W | 1 | FET General Purpose Power | 175°C | 25 ns | 100ns | 30 ns | 66 ns | 80A | 20V | SILICON | ISOLATED | SWITCHING | 2V | 45W Tc | TO-220AB | 700 mJ | 75V | N-Channel | 3700pF @ 25V | 11m Ω @ 40A, 10V | 4V @ 250μA | 80A Tc | 160nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| FDP3682 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-fdp3682-datasheets-2018.pdf | 100V | 32A | TO-220-3 | 10.67mm | 9.4mm | 4.83mm | Lead Free | 3 | 9 Weeks | 1.8g | No SVHC | 36MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | e3 | NOT SPECIFIED | Single | NOT SPECIFIED | 95W | 1 | FET General Purpose Power | Not Qualified | 9 ns | 46ns | 32 ns | 26 ns | 32A | 20V | SILICON | DRAIN | SWITCHING | 4V | 95W Tc | TO-220AB | 55 ns | 6A | 55 mJ | 100V | N-Channel | 1250pF @ 25V | 36m Ω @ 32A, 10V | 4V @ 250μA | 6A Ta 32A Tc | 28nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| IRFBG20PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfbg20pbf-datasheets-2027.pdf | 1kV | 1.4A | TO-220-3 | 10.41mm | 19.89mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 11Ohm | 3 | No | 1 | Single | 54W | 1 | 150°C | TO-220AB | 500pF | 9.4 ns | 17ns | 31 ns | 58 ns | 1.4A | 20V | 1000V | 4V | 54W Tc | 11Ohm | 1kV | N-Channel | 500pF @ 25V | 4 V | 11Ohm @ 840mA, 10V | 4V @ 250μA | 1.4A Tc | 38nC @ 10V | 11 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| IPB031N08N5ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/infineontechnologies-ipb031n08n5atma1-datasheets-1907.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | Contains Lead | 2 | 13 Weeks | 3.949996g | 3 | EAR99 | Halogen Free | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 18 ns | 18ns | 12 ns | 37 ns | 120A | 20V | 80V | SILICON | DRAIN | SWITCHING | 167W Tc | 480A | N-Channel | 6240pF @ 40V | 3.1m Ω @ 100A, 10V | 3.8V @ 108μA | 120A Tc | 87nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQJ463EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/vishaysiliconix-sqj463ept1ge3-datasheets-1798.pdf | PowerPAK® SO-8 | 12 Weeks | 506.605978mg | Unknown | 8 | No | 30A | 40V | 1 | Single | 83W | 1 | PowerPAK® SO-8 | 5.875nF | 21 ns | 17ns | 51 ns | 121 ns | -30A | 20V | 40V | -2V | 83W Tc | 10mOhm | -40V | P-Channel | 5875pF @ 20V | 10mOhm @ 18A, 10V | 2.5V @ 250μA | 30A Tc | 150nC @ 10V | 10 mΩ | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF3205ZPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | Through Hole | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/infineontechnologies-irf3205zpbf-datasheets-1803.pdf | 55V | 75A | TO-220-3 | 10.668mm | 9.017mm | 4.826mm | Contains Lead, Lead Free | 3 | 12 Weeks | No SVHC | 6.5mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | MATTE TIN OVER NICKEL | 250 | Single | 30 | 170W | 1 | FET General Purpose Power | 18 ns | 95ns | 67 ns | 45 ns | 75A | 20V | 55V | SILICON | DRAIN | SWITCHING | 4V | 170W Tc | TO-220AB | 42 ns | 440A | 250 mJ | 55V | N-Channel | 3450pF @ 25V | 4 V | 6.5m Ω @ 66A, 10V | 4V @ 250μA | 75A Tc | 110nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2N7000BU | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/onsemiconductor-2n7002-datasheets-6168.pdf&product=onsemiconductor-2n7000bu-6827960 | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | Lead Free | 11 Weeks | No SVHC | 5Ohm | 3 | EAR99 | Copper, Silver, Tin | e3 | Tin (Sn) | 2N7000 | Single | 400mW | 1 | FET General Purpose Power | 10 ns | 10ns | 10 ns | 10 ns | 200mA | 30V | 3.9V | 400mW Ta | 0.2A | 60V | N-Channel | 50pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Tc | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IPB60R190C6ATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipb60r190c6atma1-datasheets-1817.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 8 Weeks | no | EAR99 | not_compliant | e3 | Tin (Sn) | YES | SINGLE | GULL WING | NOT SPECIFIED | 4 | NOT SPECIFIED | 1 | Not Qualified | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 600V | 600V | 151W Tc | 20.2A | 59A | 0.19Ohm | 418 mJ | N-Channel | 1400pF @ 100V | 190m Ω @ 9.5A, 10V | 3.5V @ 630μA | 20.2A Tc | 63nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF540NLPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irf540nstrlpbf-datasheets-8721.pdf&product=infineontechnologies-irf540nlpbf-6827963 | 100V | 33A | TO-262-3 Long Leads, I2Pak, TO-262AA | 10.668mm | 9.65mm | 4.826mm | Lead Free | 3 | 14 Weeks | No SVHC | 44MOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | SINGLE | 260 | 30 | 130W | 1 | FET General Purpose Power | 11 ns | 35ns | 35 ns | 39 ns | 33A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 4V | 130W Tc | 100V | N-Channel | 1960pF @ 25V | 4 V | 44m Ω @ 16A, 10V | 4V @ 250μA | 33A Tc | 71nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| FQP19N20C | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Through Hole | Through Hole | -55°C~150°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/onsemiconductor-fqp19n20c-datasheets-1841.pdf&product=onsemiconductor-fqp19n20c-6827965 | 200V | 19A | TO-220-3 | 10.1mm | 9.4mm | 4.7mm | Lead Free | 3 | 5 Weeks | 1.8g | No SVHC | 170mOhm | 3 | ACTIVE (Last Updated: 2 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | Single | 139W | 1 | FET General Purpose Power | 15 ns | 150ns | 115 ns | 135 ns | 19A | 30V | SILICON | SWITCHING | 4V | 139W Tc | TO-220AB | 76A | 200V | N-Channel | 1080pF @ 25V | 170m Ω @ 9.5A, 10V | 4V @ 250μA | 19A Tc | 53nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||
| IRLU8743PBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-irlr8743trpbf-datasheets-6686.pdf | TO-251-3 Short Leads, IPak, TO-251AA | 6.7056mm | 6.22mm | 2.3876mm | Lead Free | 3 | 12 Weeks | No SVHC | 3.1MOhm | 3 | EAR99 | No | e3 | Matte Tin (Sn) - with Nickel (Ni) barrier | 260 | Single | 30 | 135W | 1 | FET General Purpose Power | 19 ns | 35ns | 17 ns | 21 ns | 160A | 20V | SILICON | DRAIN | SWITCHING | 1.9V | 135W Tc | 640A | 250 mJ | 30V | N-Channel | 4880pF @ 15V | 1.9 V | 3.1m Ω @ 25A, 10V | 2.35V @ 100μA | 160A Tc | 59nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| R8005ANJFRGTL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/rohmsemiconductor-r8005anjfrgtl-datasheets-1665.pdf | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB | 2 | 23 Weeks | YES | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 800V | 800V | 120W Tc | 5A | 10A | 1.66 mJ | N-Channel | 500pF @ 25V | 2.1 Ω @ 2.5A, 10V | 5V @ 1mA | 5A Tc | 20nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRF9530PBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | 175°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 1997 | /files/vishaysiliconix-irf9530pbf-datasheets-1865.pdf | -100V | -12A | TO-220-3 | 10.41mm | 9.01mm | 4.7mm | Lead Free | 8 Weeks | 6.000006g | Unknown | 300mOhm | 3 | No | 1 | Single | 88W | 1 | TO-220AB | 860pF | 12 ns | 52ns | 39 ns | 31 ns | -12A | 20V | 100V | -4V | 88W Tc | 240 ns | 300mOhm | -100V | P-Channel | 860pF @ 25V | 300mOhm @ 7.2A, 10V | 4V @ 250μA | 12A Tc | 38nC @ 10V | 300 mΩ | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| CSD19534KCS | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~175°C TJ | Tube | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | Non-RoHS Compliant | TO-220-3 | 10.16mm | 4.7mm | 8.7mm | Lead Free | 3 | No SVHC | 3 | ACTIVE (Last Updated: 2 days ago) | yes | 4.58mm | EAR99 | AVALANCHE RATED | Tin | e3 | NOT SPECIFIED | CSD19534 | Single | NOT SPECIFIED | 1 | 6 ns | 2ns | 1 ns | 9 ns | 100A | 20V | SILICON | DRAIN | SWITCHING | 100V | 100V | 2.8V | 118W Tc | 0.02Ohm | 7.4 pF | 54 mJ | N-Channel | 1670pF @ 50V | 16.5m Ω @ 30A, 10V | 3.4V @ 250μA | 100A Ta | 22.2nC @ 10V | 6V 10V | ±20V |
