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| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | Ambient Temperature Range High | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| STD86N3LH5 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, STripFET™ V | Surface Mount | Surface Mount | 175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-std86n3lh5-datasheets-0543.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 5MOhm | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | No | e3 | Matte Tin (Sn) - annealed | GULL WING | 260 | STD86 | 3 | Single | 70W | 1 | FET General Purpose Power | R-PSSO-G2 | 6 ns | 14ns | 10.8 ns | 23.6 ns | 80A | 22V | SILICON | DRAIN | SWITCHING | 70W Tc | 30V | N-Channel | 1850pF @ 25V | 5m Ω @ 40A, 10V | 2.5V @ 250μA | 80A Tc | 14nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| AOD4126 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SDMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 18 Weeks | 3 | 3W | 1 | FET General Purpose Powers | 43A | 25V | Single | 100V | 3W Ta 100W Tc | N-Channel | 2200pF @ 50V | 24m Ω @ 20A, 10V | 4V @ 250μA | 7.5A Ta 43A Tc | 34nC @ 10V | 7V 10V | ±25V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| BSZ068N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz068n06nsatma1-datasheets-0534.pdf | 8-PowerTDFN | Contains Lead | 3 | 18 Weeks | 8 | EAR99 | not_compliant | e3 | Tin (Sn) | Halogen Free | DUAL | NO LEAD | 1 | S-PDSO-N3 | 3ns | 40A | 20V | 60V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 2.1W Ta 46W Tc | 160A | 43 mJ | N-Channel | 1500pF @ 30V | 6.8m Ω @ 20A, 10V | 3.3V @ 20μA | 40A Tc | 21nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| TSM170N06PQ56 RLG | Taiwan Semiconductor Corporation | $2.15 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm170n06pq56rlg-datasheets-9710.pdf | 8-PowerTDFN | 5 | 32 Weeks | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 73.5W Tc | 8A | 176A | 0.02Ohm | 43 mJ | N-Channel | 1556pF @ 30V | 17m Ω @ 8A, 10V | 2.5V @ 250μA | 44A Tc | 29nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| 2N7000-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Bulk | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2008 | /files/microchiptechnology-2n7000g-datasheets-0616.pdf | 60V | 200mA | TO-226-3, TO-92-3 (TO-226AA) | 5.21mm | 5.334mm | 4.19mm | Lead Free | 3 | 6 Weeks | 453.59237mg | No SVHC | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | BOTTOM | 1 | Single | 1W | 1 | FET General Purpose Power | 10 ns | 10 ns | 200mA | 30V | SILICON | SWITCHING | 800mV | 1W Tc | 0.2A | 5Ohm | 5 pF | 60V | N-Channel | 60pF @ 25V | 5 Ω @ 500mA, 10V | 3V @ 1mA | 200mA Tj | 4.5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||
| FDS6690AS | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench®, SyncFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fds6690as-datasheets-0626.pdf | 30V | 10A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 12MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 8 ns | 5ns | 6 ns | 25 ns | 10A | 20V | SILICON | SWITCHING | 1.6V | 2.5W Ta | 30V | N-Channel | 910pF @ 15V | 1.6 V | 12m Ω @ 10A, 10V | 3V @ 1mA | 10A Ta | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| PSMN2R2-25YLC,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/nexperiausainc-psmn2r225ylc115-datasheets-0428.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 3.15MOhm | 4 | HIGH RELIABILITY | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 106W | 1 | 24 ns | 34ns | 16 ns | 36 ns | 100A | 20V | 25V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 106W Tc | MO-235 | 636A | 60 mJ | 25V | N-Channel | 2542pF @ 12V | 2.4m Ω @ 25A, 10V | 1.95V @ 1mA | 100A Tc | 39nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| SQJA86EP-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sqja86ept1ge3-datasheets-0064.pdf | PowerPAK® SO-8 | 1.267mm | 4 | 14 Weeks | unknown | YES | SINGLE | GULL WING | 260 | 1 | NOT SPECIFIED | 48W | 1 | 175°C | R-PSSO-G4 | 10 ns | 23 ns | 30A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 48W Tc | 84A | 20 mJ | 80V | N-Channel | 1400pF @ 25V | 19m Ω @ 8A, 10V | 2.5V @ 250μA | 30A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| IRFR9014TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/vishaysiliconix-irfr9014trpbf-datasheets-0184.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 8 Weeks | 1.437803g | 500mOhm | 3 | yes | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | GULL WING | 260 | 3 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | R-PSSO-G2 | 11 ns | 63ns | 31 ns | 9.6 ns | 5.1A | 20V | SILICON | DRAIN | SWITCHING | 60V | 2.5W Ta 25W Tc | 20A | -60V | P-Channel | 270pF @ 25V | 500m Ω @ 3.1A, 10V | 4V @ 250μA | 5.1A Tc | 12nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| CSD16412Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 16 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD16412 | 8 | Single | 3W | 1 | FET General Purpose Power | 5.5 ns | 7.1ns | 3.3 ns | 5.7 ns | 52A | 16V | 25V | SILICON | DRAIN | SWITCHING | 2V | 3W Ta | 42 pF | 25V | N-Channel | 530pF @ 12.5V | 2 V | 11m Ω @ 10A, 10V | 2.3V @ 250μA | 14A Ta 52A Tc | 3.8nC @ 4.5V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||
| FDD8896 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdd8896-datasheets-0287.pdf | 30V | 94A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 5.7MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 80W | 1 | FET General Purpose Power | R-PSSO-G2 | 9 ns | 106ns | 41 ns | 53 ns | 94A | 20V | SILICON | DRAIN | SWITCHING | 2.5V | 80W Tc | TO-252AA | 30V | N-Channel | 2525pF @ 15V | 5.7m Ω @ 35A, 10V | 2.5V @ 250μA | 17A Ta 94A Tc | 60nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||
| DMPH6050SFGQ-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmph6050sfgq7-datasheets-0254.pdf | 8-PowerVDFN | 23 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 1.2W Ta | P-Channel | 1.293nF @ 30V | 50m Ω @ 7A, 10V | 3V @ 250μA | 6.1A Ta 18A Tc | 24.1nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI7114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si7114adnt1ge3-datasheets-9992.pdf | PowerPAK® 1212-8 | 3.05mm | 1.04mm | 3.05mm | 5 | 14 Weeks | Unknown | 8 | yes | EAR99 | No | e3 | MATTE TIN | DUAL | C BEND | 260 | 8 | 1 | Single | 30 | 3.7W | 1 | FET General Purpose Powers | S-XDSO-C5 | 20 ns | 14ns | 10 ns | 20 ns | 18.3A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3V | 3.7W Ta 39W Tc | 35A | 60A | 0.0075Ohm | 45 mJ | N-Channel | 1230pF @ 15V | 7.5m Ω @ 18A, 10V | 2.5V @ 250μA | 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| BUK9Y15-60E,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/nexperiausainc-buk9y1560e115-datasheets-9252.pdf | SC-100, SOT-669 | 4 | 12 Weeks | 4 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | YES | GULL WING | 4 | 1 | Single | 95W | 1 | 11.4 ns | 17.3ns | 15.3 ns | 25.2 ns | 53A | 10V | 60V | SILICON | DRAIN | SWITCHING | 95W Tc | MO-235 | 60V | N-Channel | 2603pF @ 25V | 13m Ω @ 15A, 10V | 2.1V @ 1mA | 53A Tc | 17.2nC @ 5V | 5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||||
| SPD08P06PGBTMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-spd08p06pgbtma1-datasheets-0350.pdf | -60V | -8.8A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2.5mm | Contains Lead | 2 | 18 Weeks | 3 | no | EAR99 | AVALANCHE RATED | not_compliant | e3 | Tin (Sn) | Not Halogen Free | SINGLE | GULL WING | NOT SPECIFIED | 4 | 1 | NOT SPECIFIED | 42W | 1 | Not Qualified | 175°C | R-PSSO-G2 | 16 ns | 46ns | 14 ns | 48 ns | -8.83A | 20V | -60V | SILICON | SINGLE WITH BUILT-IN DIODE | 60V | -3V | 42W Tc | 70 mJ | -60V | P-Channel | 420pF @ 25V | 300m Ω @ 10A, 6.2V | 4V @ 250μA | 8.83A Ta | 13nC @ 10V | 6.2V | ±20V | |||||||||||||||||||||||||||||||
| CSD17579Q3AT | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 2 days ago) | yes | 800μm | AVALANCHE RATED | Tin | e3 | DUAL | FLAT | 260 | CSD17579 | Single | NOT SPECIFIED | 1 | 2 ns | 5ns | 1 ns | 11 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 3.2W Ta 29W Tc | 11A | 106A | 0.0142Ohm | 49 pF | 14 mJ | N-Channel | 998pF @ 15V | 10.2m Ω @ 8A, 10V | 1.9V @ 250μA | 20A Ta | 15nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||
| PSMN7R5-60YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/nexperiausainc-psmn7r560ylx-datasheets-0195.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 86A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 147W Tc | MO-235 | 346A | 0.0087Ohm | 76.5 mJ | N-Channel | 4570pF @ 25V | 7.5m Ω @ 20A, 10V | 2.1V @ 1mA | 86A Tc | 31nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| ZVN2110GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/diodesincorporated-zvn2110gta-datasheets-0391.pdf | 100V | 500mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 4Ohm | no | EAR99 | FAST SWITCHING | Tin | No | e3 | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 4 ns | 4ns | 8 ns | 8 ns | 500mA | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 0.5A | 6A | 100V | N-Channel | 75pF @ 25V | 4 Ω @ 1A, 10V | 2.4V @ 1mA | 500mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
| STD20NF06T4 | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | STripFET™ II | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/stmicroelectronics-std20nf06t4-datasheets-0359.pdf | 60V | 24A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.4mm | 6.2mm | Lead Free | 2 | No SVHC | 40mOhm | 3 | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | STD20N | 3 | Single | 30 | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 30ns | 8 ns | 30 ns | 24A | 20V | SILICON | DRAIN | SWITCHING | 4V | 60W Tc | TO-252AA | 96A | 60V | N-Channel | 690pF @ 25V | 40m Ω @ 12A, 10V | 4V @ 250μA | 24A Tc | 31nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IPD50N06S4L12ATMA2 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, OptiMOS™ | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/infineontechnologies-ipd50n06s4l12atma2-datasheets-0410.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 12 Weeks | 3.949996g | yes | not_compliant | e3 | Tin (Sn) | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 1 | R-PSSO-G2 | 6 ns | 2ns | 5 ns | 25 ns | 50A | 16V | 60V | SILICON | DRAIN | 50W Tc | 200A | 33 mJ | N-Channel | 2890pF @ 25V | 12m Ω @ 50A, 10V | 2.2V @ 20μA | 50A Tc | 40nC @ 10V | 4.5V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||||||||
| SUD08P06-155L-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-sud08p06155lge3-datasheets-0188.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 14 Weeks | yes | EAR99 | YES | SINGLE | GULL WING | NOT SPECIFIED | SUD08P06 | 4 | NOT SPECIFIED | 1 | Other Transistors | R-PSSO-G2 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 60V | 60V | 1.7W Ta 20.8W Tc | 8.2A | 18A | 0.155Ohm | 7.2 mJ | P-Channel | 450pF @ 25V | 155m Ω @ 5A, 10V | 3V @ 250μA | 8.4A Tc | 19nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN010-80YLX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2016 | /files/nexperiausainc-psmn01080ylx-datasheets-0222.pdf | SC-100, SOT-669 | 4 | 12 Weeks | AVALANCHE RATED | IEC-60134 | SINGLE | GULL WING | 4 | 1 | R-PSSO-G4 | 84A | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 80V | 80V | 194W Tc | MO-235 | 336A | 0.011Ohm | 112.8 mJ | N-Channel | 6506pF @ 25V | 10m Ω @ 25A, 10V | 2.1V @ 1mA | 84A Tc | 44.2nC @ 5V | 5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| TN2106K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/microchiptechnology-tn2106k1g-datasheets-0026.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | 3 | 5 Weeks | 1.437803g | 3 | EAR99 | LOW THRESHOLD, LOGIC LEVEL COMPATIBLE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | 3 ns | 5ns | 5 ns | 6 ns | 280mA | 20V | SILICON | SWITCHING | 360mW Tc | 0.28A | 8 pF | 60V | N-Channel | 50pF @ 25V | 2.5 Ω @ 500mA, 10V | 2V @ 1mA | 280mA Tj | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||
| 2N7002-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/microchiptechnology-2n7002g-datasheets-0033.pdf | TO-236-3, SC-59, SOT-23-3 | 2.92mm | 1.12mm | 1.3mm | Lead Free | 3 | 14 Weeks | 1.437803g | 3 | EAR99 | HIGH INPUT IMPEDANCE | Tin | No | e3 | DUAL | GULL WING | 260 | 1 | Single | 40 | 360mW | 1 | FET General Purpose Power | 150°C | 20 ns | 20 ns | 115mA | 30V | SILICON | SWITCHING | 360mW Ta | 5 pF | 60V | N-Channel | 50pF @ 25V | 7.5 Ω @ 500mA, 10V | 2.5V @ 250μA | 115mA Tj | 5V 10V | ±30V | ||||||||||||||||||||||||||||||||||||||||
| SISS27ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-siss27adnt1ge3-datasheets-9982.pdf | PowerPAK® 1212-8S | 14 Weeks | EAR99 | unknown | NOT SPECIFIED | NOT SPECIFIED | 30V | 57W Tc | P-Channel | 4660pF @ 15V | 5.1m Ω @ 15A, 10V | 2.2V @ 250μA | 50A Tc | 55nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| EPC2203 | EPC |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, eGaN® | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | GaNFET (Gallium Nitride) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/epc-epc2203-datasheets-9996.pdf | Die | 14 Weeks | Die | 80V | N-Channel | 88pF @ 50V | 80mOhm @ 1A, 5V | 2.5V @ 600μA | 1.7A | 0.83nC @ 5V | 5V | +5.75V, -4V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDMC8327L | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2017 | /files/onsemiconductor-fdmc8327l-datasheets-9893.pdf | 8-PowerWDFN | 3.3mm | 800μm | 3.3mm | 5 | 4 Weeks | 180mg | No SVHC | 8 | ACTIVE (Last Updated: 9 hours ago) | yes | EAR99 | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | 1 | Single | 2.3W | 1 | FET General Purpose Power | 150°C | S-PDSO-N5 | 8.4 ns | 2.2ns | 2.2 ns | 20 ns | 12A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.3W Ta 30W Tc | MO-240BA | 60A | 0.0097Ohm | 25 mJ | 40V | N-Channel | 1850pF @ 20V | 9.7m Ω @ 12A, 10V | 3V @ 250μA | 12A Ta 14A Tc | 26nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| BSP170PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/infineontechnologies-bsp170ph6327xtsa1-datasheets-0092.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 3.5mm | Lead Free | 4 | 10 Weeks | 4 | yes | EAR99 | AVALANCHE RATED | Tin | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | NOT SPECIFIED | 4 | 1 | Single | NOT SPECIFIED | 1.8W | 1 | Other Transistors | 14 ns | 28ns | 60 ns | 92 ns | -1.9A | 20V | -60V | SILICON | DRAIN | 60V | -3V | 1.8W Ta | 7.6A | 0.3Ohm | 70 mJ | -60V | P-Channel | 410pF @ 25V | 300m Ω @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 14nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||
| ZVN0545GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvn0545gta-datasheets-0112.pdf | 450V | 140mA | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 50Ohm | 3 | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 2W | 1 | R-PDSO-G4 | 7 ns | 7ns | 10 ns | 16 ns | 140mA | 20V | SILICON | DRAIN | SWITCHING | 3V | 2W Ta | 0.6A | 450V | N-Channel | 70pF @ 25V | 50 Ω @ 100mA, 10V | 3V @ 1mA | 140mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||
| CSD17507Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 8 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 5 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17507 | 8 | Single | 3W | 1 | FET General Purpose Power | 4.7 ns | 5.2ns | 2.3 ns | 5.7 ns | 65A | 20V | SILICON | DRAIN | SWITCHING | 1.6V | 3W Ta | 30 pF | 30V | N-Channel | 530pF @ 15V | 1.6 V | 10.8m Ω @ 11A, 10V | 2.1V @ 250μA | 13A Ta 65A Tc | 3.6nC @ 4.5V | 4.5V 10V | ±20V |
