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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Max Operating Temperature | Min Operating Temperature | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Capacitance | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Manufacturer Package Identifier | Reach Compliance Code | JESD-609 Code | Terminal Finish | Reference Standard | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | Max Junction Temperature (Tj) | JESD-30 Code | Supplier Device Package | Input Capacitance | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Drain to Source Resistance | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Rds On Max | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| CPC3960ZTR | IXYS Integrated Circuits Division |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~125°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 125°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/ixys-cpc3960ztr-datasheets-3136.pdf | TO-261-4, TO-261AA | 8 Weeks | SOT-223 | 100pF | 600V | 1.8W Ta | N-Channel | 100pF @ 25V | 44Ohm @ 100mA, 0V | Depletion Mode | 44 Ω | 0V | ±15V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| STQ2HNK60ZR-AP | STMicroelectronics |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SuperMESH™ | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/stmicroelectronics-stq2hnk60zrap-datasheets-8947.pdf | TO-226-3, TO-92-3 (TO-226AA) (Formed Leads) | Lead Free | 3 | 8 Weeks | 3 | ACTIVE (Last Updated: 7 months ago) | EAR99 | Tin | No | e3 | BOTTOM | STQ2 | 3 | 1 | FET General Purpose Power | 10 ns | 30ns | 50 ns | 13 ns | 500mA | 30V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 600V | 600V | 3W Tc | 0.5A | 2A | 120 mJ | N-Channel | 280pF @ 25V | 4.8 Ω @ 1A, 10V | 4.5V @ 50μA | 500mA Tc | 15nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||||
| TPCA8052-H(T2L1,VM | Toshiba Semiconductor and Storage | $0.90 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSVI-H | Surface Mount | 150°C | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | 8-PowerVDFN | 12 Weeks | EAR99 | 40V | 1.6W Ta 30W Tc | N-Channel | 2110pF @ 10V | 11.3m Ω @ 10A, 10V | 2.3V @ 200μA | 20A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDD6N20TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | UniFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdd6n20tm-datasheets-8931.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 800mOhm | 3 | ACTIVE (Last Updated: 19 hours ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 40W | 1 | FET General Purpose Power | R-PSSO-G2 | 8.3 ns | 5.6ns | 12.8 ns | 15 ns | 4.5A | 30V | SILICON | SWITCHING | 5V | 40W Tc | 60 mJ | 200V | N-Channel | 230pF @ 25V | 800m Ω @ 2.3A, 10V | 5V @ 250μA | 4.5A Tc | 6.1nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||||||||||||
| SI4447DY-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/vishaysiliconix-si4447dyt1e3-datasheets-8864.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 54mOhm | 8 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 1.1W | 1 | Other Transistors | 8 ns | 12ns | 12 ns | 74 ns | -4.5A | 16V | SILICON | SWITCHING | 40V | -2.2V | 1.1W Ta | 3.3A | 30A | -40V | P-Channel | 805pF @ 20V | 72m Ω @ 4.5A, 15V | 2.2V @ 250μA | 3.3A Ta | 14nC @ 4.5V | 15V 10V | ±16V | ||||||||||||||||||||||||||||||||||||||
| BSP315PH6327XTSA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | SIPMOS® | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/infineontechnologies-bsp315ph6327xtsa1-datasheets-8952.pdf | TO-261-4, TO-261AA | 6.5mm | 1.8mm | 6.7mm | Lead Free | 4 | 10 Weeks | No SVHC | 4 | yes | EAR99 | LOGIC LEVEL COMPATIBLE, AVALANCHE RATED | Tin | No | PG-SOT223-4 | e3 | Halogen Free | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 1.8W | 1 | Other Transistors | 150°C | 24 ns | 9ns | 19 ns | 32 ns | 1.17A | 20V | -60V | -60V | SILICON | DRAIN | 60V | -1.5V | 1.8W Ta | 46 ns | 0.8Ohm | -60V | P-Channel | 160pF @ 25V | -1.5 V | 800m Ω @ 1.17A, 10V | 2V @ 160μA | 1.17A Ta | 7.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| ZXMN10A08GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn10a08gta-datasheets-8940.pdf | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 250mOhm | no | EAR99 | not_compliant | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | Not Qualified | R-PDSO-G4 | 3.4 ns | 2.2ns | 3.2 ns | 8 ns | 2A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 2A | 100V | N-Channel | 405pF @ 50V | 250m Ω @ 3.2A, 10V | 2V @ 250μA | 2A Ta | 7.7nC @ 10V | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| BSZ100N06NSATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | OptiMOS™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | /files/infineontechnologies-bsz100n06nsatma1-datasheets-9059.pdf | 8-PowerTDFN | Contains Lead | 18 Weeks | 8 | Tin | Halogen Free | PG-TSDSON-8-FL | 1.075nF | 2ns | 40A | 20V | 60V | 60V | 2.1W Ta 36W Tc | 8.5mOhm | N-Channel | 1075pF @ 30V | 10mOhm @ 20A, 10V | 3.3V @ 14μA | 40A Tc | 15nC @ 10V | 10 mΩ | 6V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| RSQ015P10TR | ROHM Semiconductor | $0.82 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 12 Weeks | 6 | EAR99 | No | e1 | DUAL | GULL WING | 6 | 1 | 10 ns | 15ns | 10 ns | 60 ns | 1.5A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 100V | 100V | 600mW Ta | 6A | 0.47Ohm | P-Channel | 950pF @ 25V | 470m Ω @ 1.5A, 10V | 2.5V @ 1mA | 1.5A Ta | 17nC @ 5V | 4V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| ZXMN6A08GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zxmn6a08gta-datasheets-8860.pdf | 60V | 2.5A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 17 Weeks | 7.994566mg | No SVHC | 80mOhm | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 4 | 1 | Single | 40 | 3.9W | 1 | R-PDSO-G4 | 2.6 ns | 2.1ns | 4.6 ns | 12.3 ns | 5.3A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 3.8A | 20A | N-Channel | 459pF @ 40V | 80m Ω @ 4.8A, 10V | 1V @ 250μA | 3.8A Ta | 5.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||
| NTTFS5826NLTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nttfs5826nltag-datasheets-8923.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 19W | 1 | S-PDSO-F5 | 9 ns | 17 ns | 20A | 20V | SILICON | DRAIN | SWITCHING | 3V | 3.1W Ta 19W Tc | 8A | 0.032Ohm | 20 mJ | 60V | N-Channel | 850pF @ 25V | 24m Ω @ 7.5A, 10V | 3V @ 250μA | 8A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||
| IRF7807ZTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/infineontechnologies-irf7807ztrpbf-datasheets-8675.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | 4.9784mm | 1.4986mm | 3.9878mm | Contains Lead, Lead Free | 8 | 12 Weeks | No SVHC | 8.2MOhm | 8 | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 30 | 2.5W | 1 | 6.9 ns | 6.2ns | 3.1 ns | 10 ns | 11A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 1.8V | 2.5W Ta | 30V | N-Channel | 770pF @ 15V | 1.8 V | 13.8m Ω @ 11A, 10V | 2.25V @ 250μA | 11A Ta | 11nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| DMN4008LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn4008lfg7-datasheets-8722.pdf | 8-PowerVDFN | 5 | 23 Weeks | 72.007789mg | 8 | EAR99 | HIGH RELIABILITY | e3 | Matte Tin (Sn) | DUAL | NO LEAD | 260 | 1 | Single | 30 | 1 | S-PDSO-N5 | 8.2 ns | 14.1ns | 24.4 ns | 69.7 ns | 14.4A | 20V | SILICON | DRAIN | SWITCHING | 1W Ta | 0.0075Ohm | 40V | N-Channel | 3537pF @ 20V | 7.5m Ω @ 10A, 10V | 3V @ 250μA | 14.4A Ta | 74nC @ 10V | 3.3V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||
| PSMN018-80YS,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/nexperiausainc-psmn01880ys115-datasheets-8740.pdf | SC-100, SOT-669 | Lead Free | 4 | 12 Weeks | 4 | No | e3 | Tin (Sn) | YES | SINGLE | GULL WING | 4 | 89W | 1 | 45A | 20V | 80V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 89W Tc | MO-235 | 80V | N-Channel | 1640pF @ 40V | 18m Ω @ 5A, 10V | 4V @ 1mA | 45A Tc | 26nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| CSD17307Q5A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerTDFN | 4.9mm | 1.1mm | 6mm | Contains Lead | 5 | 12 Weeks | No SVHC | 8 | ACTIVE (Last Updated: 4 days ago) | yes | 1mm | EAR99 | AVALANCHE RATED | Tin | No | e3 | DUAL | 260 | CSD17307 | 8 | Single | 3W | 1 | FET General Purpose Power | 4.6 ns | 6.7ns | 2.6 ns | 9.3 ns | 73A | 10V | SILICON | DRAIN | SWITCHING | 1.3V | 3W Ta | 92A | 0.0173Ohm | 36 pF | 54 mJ | 30V | N-Channel | 700pF @ 15V | 1.3 V | 10.5m Ω @ 11A, 8V | 1.8V @ 250μA | 14A Ta 73A Tc | 5.2nC @ 4.5V | 3V 8V | +10V, -8V | ||||||||||||||||||||||||||||||||||||||
| FQD1N80TM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/onsemiconductor-fqd1n80tm-datasheets-8761.pdf | 800V | 1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 4 Weeks | 260.37mg | No SVHC | 20Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 10 ns | 25ns | 25 ns | 15 ns | 1mA | 30V | SILICON | DRAIN | SWITCHING | 5V | 2.5W Ta 45W Tc | 1A | 4A | 90 mJ | 800V | N-Channel | 195pF @ 25V | 5 V | 20 Ω @ 500mA, 10V | 5V @ 250μA | 1A Tc | 7.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||||||||||
| FDT86113LZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-fdt86113lz-datasheets-8817.pdf | TO-261-4, TO-261AA | 3.7mm | 1.7mm | 6.7mm | Lead Free | 4 | 8 Weeks | 250.2mg | No SVHC | 4 | ACTIVE (Last Updated: 12 hours ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE | Tin | No | e3 | DUAL | GULL WING | Single | 2.2W | 1 | FET General Purpose Power | 3.8 ns | 1.3ns | 1.5 ns | 10 ns | 3.3A | 20V | SILICON | DRAIN | SWITCHING | 1.7V | 2.2W Ta | 5 pF | 100V | N-Channel | 315pF @ 50V | 100m Ω @ 3.3A, 10V | 2.5V @ 250μA | 3.3A Tc | 6.8nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| DMN7022LFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/diodesincorporated-dmn7022lfg7-datasheets-8650.pdf | 8-PowerVDFN | 2.737nF | 23 Weeks | 72.007789mg | 8 | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 6.1 ns | 5.7ns | 3.9 ns | 19.6 ns | 7.8A | 20V | 900mW Ta | 75V | N-Channel | 2737pF @ 35V | 22m Ω @ 7.2A, 10V | 3V @ 250μA | 7.8A Ta | 56.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFL210TRPBF | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | 150°C | -55°C | MOSFET (Metal Oxide) | ROHS3 Compliant | 2013 | /files/vishaysiliconix-irfl210trpbf-datasheets-8841.pdf | TO-261-4, TO-261AA | 6.7mm | 1.8mm | 3.7mm | Lead Free | 8 Weeks | 250.212891mg | Unknown | 1.5Ohm | 4 | Tin | No | 1 | 2W | 1 | SOT-223 | 140pF | 8.2 ns | 17ns | 8.9 ns | 14 ns | 960mA | 20V | 200V | 4V | 2W Ta 3.1W Tc | 1.5Ohm | 200V | N-Channel | 140pF @ 25V | 2 V | 1.5Ohm @ 580mA, 10V | 4V @ 250μA | 960mA Tc | 8.2nC @ 10V | 1.5 Ω | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||
| ZVNL110ASTZ | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Through Hole | Through Hole | -55°C~150°C TJ | Tape & Box (TB) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/diodesincorporated-zvnl110astz-datasheets-8706.pdf&product=diodesincorporated-zvnl110astz-6827442 | 100V | 320mA | E-Line-3 | 4.77mm | 4.01mm | 2.41mm | Lead Free | 3 | 17 Weeks | 453.59237mg | No SVHC | 3Ohm | 3 | yes | EAR99 | No | E-Line | e3 | Matte Tin (Sn) | WIRE | 260 | 3 | 1 | Single | 40 | 700mW | 1 | 7 ns | 12ns | 12 ns | 15 ns | 320mA | 20V | SILICON | SWITCHING | 700mW Ta | 100V | N-Channel | 75pF @ 25V | 3 Ω @ 500mA, 10V | 1.5V @ 1mA | 320mA Ta | 5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||
| ZXMN10A11GTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-zxmn10a11gta-datasheets-8889.pdf | 100V | 1A | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 7.994566mg | No SVHC | 350mOhm | no | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 1 | Single | 40 | 3.9W | 1 | FET General Purpose Power | R-PDSO-G4 | 2.7 ns | 1.7ns | 3.5 ns | 7.4 ns | 2.4A | 20V | SILICON | DRAIN | SWITCHING | 2W Ta | 100V | N-Channel | 274pF @ 50V | 350m Ω @ 2.6A, 10V | 4V @ 250μA | 1.7A Ta | 5.4nC @ 10V | 6V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||
| SI3457DV | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-si3457dv-datasheets-8668.pdf | -30V | -4A | SOT-23-6 Thin, TSOT-23-6 | Lead Free | 6 | 10 Weeks | 36mg | 50MOhm | 6 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | GULL WING | Single | 1.6W | 1 | Other Transistors | 7 ns | 12ns | 12 ns | 16 ns | 4A | 25V | SILICON | SWITCHING | 30V | 1.6W Ta | 4A | -30V | P-Channel | 470pF @ 25V | 50m Ω @ 4A, 10V | 3V @ 250μA | 4A Ta | 8.1nC @ 5V | 4.5V 10V | ±25V | ||||||||||||||||||||||||||||||||||||||||||||||
| RTR020N05TL | ROHM Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | SC-96 | 2.9mm | 900μm | 1.6mm | Lead Free | 3 | 20 Weeks | No SVHC | 180MOhm | 3 | yes | EAR99 | Copper, Silver, Tin | No | e1 | DUAL | GULL WING | 260 | 3 | Single | 10 | 1W | 1 | FET General Purpose Power | 11 ns | 16ns | 11 ns | 21 ns | 2A | 12V | 45V | SILICON | SWITCHING | 1.5V | 1W Ta | 2A | 45V | N-Channel | 200pF @ 10V | 1.5 V | 180m Ω @ 2A, 4.5V | 1.5V @ 1mA | 2A Ta | 4.1nC @ 4.5V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||
| MCU20P10-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu20p10tp-datasheets-8814.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 260 | 10 | 100V | 70W | P-Channel | 2100pF @ 25V | 100m Ω @ 16A, 10V | 3V @ 250μA | 20A | 61nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDC2612 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fdc2612-datasheets-3051.pdf | 200V | 1.1A | SOT-23-6 Thin, TSOT-23-6 | 3mm | 1mm | 1.7mm | Lead Free | 6 | 15 Weeks | 36mg | No SVHC | 725MOhm | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | e3 | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1.6W | 1 | FET General Purpose Power | Not Qualified | 6 ns | 6ns | 6 ns | 17 ns | 1.1A | 20V | SILICON | SWITCHING | 4V | 1.6W Ta | 200V | N-Channel | 234pF @ 100V | 725m Ω @ 1.1A, 10V | 4.5V @ 250μA | 1.1A Ta | 11nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||
| NTMYS021N06CLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/onsemiconductor-ntmys021n06cltwg-datasheets-8416.pdf | SOT-1023, 4-LFPAK | 33 Weeks | yes | not_compliant | e3 | Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.8W Ta 28W Tc | N-Channel | 410pF @ 25V | 21m Ω @ 10A, 10V | 2V @ 16μA | 9.8A Ta 27A Tc | 5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| AOD508 | Alpha & Omega Semiconductor Inc. | $0.42 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | TO-252-3, DPak (2 Leads + Tab), SC-63 | 2 | 18 Weeks | 3 | EAR99 | not_compliant | e3 | Matte Tin (Sn) | SINGLE | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 50W | 1 | R-PSSO-G2 | 70A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 30V | 2.5W Ta 50W Tc | 68 mJ | N-Channel | 2010pF @ 15V | 3m Ω @ 20A, 10V | 2.2V @ 250μA | 22A Ta 70A Tc | 49nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| NVTFS5C471NLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvtfs5c471nlwftag-datasheets-8474.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 30W Tc | 163A | 0.0155Ohm | 66 mJ | N-Channel | 660pF @ 25V | 9m Ω @ 10A, 10V | 2.2V @ 20μA | 41A Tc | 5.5nC @ 4.5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SQ2310ES-T1_GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2016 | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sq2310est1ge3-datasheets-8489.pdf | TO-236-3, SC-59, SOT-23-3 | 12 Weeks | TO-236 | 20V | 2W Tc | 24mOhm | N-Channel | 485pF @ 10V | 30mOhm @ 5A, 4.5V | 1V @ 250μA | 6A Tc | 8.5nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| FDS6612A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/onsemiconductor-fds6612a-datasheets-8493.pdf | 30V | 8.4A | 8-SOIC (0.154, 3.90mm Width) | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 22MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 7 ns | 5ns | 3 ns | 22 ns | 8.4A | 20V | 30V | SILICON | SWITCHING | 1.9V | 2.5W Ta | 30V | N-Channel | 560pF @ 15V | 1.9 V | 22m Ω @ 8.4A, 10V | 3V @ 250μA | 8.4A Ta | 7.6nC @ 5V | 4.5V 10V | ±20V |
