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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Technology | Operating Mode | RoHS Status | Published | Datasheet | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | ECCN Code | Additional Feature | Radiation Hardening | Reach Compliance Code | JESD-609 Code | Terminal Finish | Halogen Free | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Qualification Status | JESD-30 Code | Supplier Device Package | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Power Dissipation-Max | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | FET Feature | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| NTTFS5116PLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nttfs5116pltag-datasheets-9913.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | FLAT | 8 | Single | 40W | 1 | Other Transistors | S-PDSO-F5 | 15 ns | 58ns | 37 ns | 30 ns | 5.7A | 20V | SILICON | DRAIN | SWITCHING | 60V | 3.2W Ta 40W Tc | 20A | 76A | 0.072Ohm | 45 mJ | -60V | P-Channel | 1258pF @ 30V | 52m Ω @ 6A, 10V | 3V @ 250μA | 5.7A Ta | 25nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||
| NVD5C478NLT4G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | /files/onsemiconductor-nvd5c478nlt4g-datasheets-8134.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 4 Weeks | ACTIVE (Last Updated: 1 week ago) | yes | 40V | 3W Ta 30W Tc | N-Channel | 1100pF @ 25V | 7.7m Ω @ 15A, 10V | 2.2V @ 30μA | 14A Ta 45A Tc | 20nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA106DJ-T1-GE3 | Vishay Siliconix | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia106djt1ge3-datasheets-8035.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 60V | 3.5W Ta 19W Tc | N-Channel | 540pF @ 30V | 18.5mOhm @ 4A, 10V | 4V @ 250μA | 10A Ta 12A Tc | 13.5nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIA108DJ-T1-GE3 | Vishay Siliconix | $0.74 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sia108djt1ge3-datasheets-8037.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 80V | 3.5W Ta 19W Tc | N-Channel | 545pF @ 40V | 38mOhm @ 4A, 10V | 4V @ 250μA | 6.6A Ta 12A Tc | 13nC @ 10V | 7.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISS65DN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siss65dnt1ge3-datasheets-8043.pdf | PowerPAK® 1212-8S | 14 Weeks | PowerPAK® 1212-8S (3.3x3.3) | 30V | 5.1W Ta 65.8W Tc | P-Channel | 4930pF @ 15V | 4.6mOhm @ 15A, 10V | 2.3V @ 250μA | 25.9A Ta 94A Tc | 138nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ1A060ZPTR | ROHM Semiconductor | $17.47 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Digi-Reel® | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | yes | EAR99 | No | e2 | Tin/Copper (Sn/Cu) | DUAL | 260 | 8 | 1 | Single | 10 | 1 | Other Transistors | 12 ns | 105ns | 230 ns | 400 ns | 6A | 10V | SILICON | SWITCHING | 12V | 700mW Ta | 6A | 24A | 0.023Ohm | -12V | P-Channel | 2800pF @ 6V | 23m Ω @ 6A, 4.5V | 1V @ 1mA | 6A Ta | 34nC @ 4.5V | 1.5V 4.5V | ±10V | ||||||||||||||||||||||||
| SISA40DN-T1-GE3 | Vishay Siliconix | $0.67 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sisa40dnt1ge3-datasheets-7834.pdf | PowerPAK® 1212-8 | 14 Weeks | PowerPAK® 1212-8 | 20V | 3.7W Ta 52W Tc | N-Channel | 3415pF @ 10V | 1.1mOhm @ 10A, 10V | 1.5V @ 250μA | 43.7A Ta 162A Tc | 53nC @ 10V | 2.5V 10V | +12V, -8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM220NB06LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm220nb06lcrrlg-datasheets-7907.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.1W Ta 68W Tc | N-Channel | 1314pF @ 30V | 22m Ω @ 8A, 10V | 2.5V @ 250μA | 8A Ta 35A Tc | 23nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM220NB06CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm220nb06crrlg-datasheets-7888.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.1W Ta 68W Tc | N-Channel | 1454pF @ 30V | 22m Ω @ 8A, 10V | 4V @ 250μA | 8A Ta 35A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTTFS4821NTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-nttfs4821ntag-datasheets-7871.pdf | 8-PowerWDFN | 3.15mm | 750μm | 3.15mm | Lead Free | 5 | 18 Weeks | 8 | ACTIVE (Last Updated: 13 hours ago) | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | 8 | 4.1W | 1 | FET General Purpose Power | S-PDSO-N5 | 12 ns | 22ns | 4.5 ns | 16 ns | 18.6A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 660mW Ta 38.5W Tc | 57A | 55 mJ | 30V | N-Channel | 1755pF @ 12V | 7m Ω @ 20A, 10V | 2.5V @ 250μA | 7.5A Ta 57A Tc | 24nC @ 11.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||
| TSM110NB04LCR RLG | Taiwan Semiconductor Corporation | $1.59 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm110nb04lcrrlg-datasheets-7866.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 68W Tc | N-Channel | 1269pF @ 20V | 11m Ω @ 12A, 10V | 2.5V @ 250μA | 12A Ta 54A Tc | 23nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM110NB04CR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm110nb04crrlg-datasheets-7940.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 68W Tc | N-Channel | 1443pF @ 20V | 11m Ω @ 12A, 10V | 4V @ 250μA | 12A Ta 54A Tc | 23nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| DMN22M5UFG-7 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/diodesincorporated-dmn22m5ufg7-datasheets-7953.pdf | 8-PowerVDFN | 18 Weeks | 20V | 600mW Ta | N-Channel | 2.5m Ω @ 13.5A, 4.5V | 1.3V @ 250μA | 27A Tc | 99nC @ 10V | 2.5V 4.5V | ±12V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| TSM150NB04CR RLG | Taiwan Semiconductor Corporation | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm150nb04crrlg-datasheets-7624.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 40V | 3.1W Ta 56W Tc | N-Channel | 1092pF @ 20V | 15m Ω @ 10A, 10V | 4V @ 250μA | 10A Ta 41A Tc | 19nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||
| LND250K1-G | Microchip Technology |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2014 | /files/microchiptechnology-lnd250k1g-datasheets-7958.pdf | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 950μm | 1.3mm | 3 | 6 Weeks | 1.437803g | 3 | EAR99 | HIGH INPUT IMPEDANCE | e3 | Matte Tin (Sn) - annealed | DUAL | GULL WING | NOT SPECIFIED | 1 | Single | NOT SPECIFIED | 360mW | 1 | Not Qualified | 90 ns | 450ns | 450 ns | 100 ns | 13mA | 20V | SILICON | SWITCHING | 360mW Ta | 500V | N-Channel | 10pF @ 25V | 1000 Ω @ 500μA, 0V | 13mA Tj | Depletion Mode | 0V | ±20V | |||||||||||||||||||||||||||
| DMP3036SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/diodesincorporated-dmp3036sss13-datasheets-7719.pdf | 8-SOIC (0.154, 3.90mm Width) | 8 | 23 Weeks | 8 | EAR99 | e3 | Matte Tin (Sn) | DUAL | GULL WING | NOT SPECIFIED | NOT SPECIFIED | 1 | 19.5A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 30V | 30V | 1.4W Ta | 11.4A | 0.02Ohm | P-Channel | 1931pF @ 15V | 20m Ω @ 9A, 10V | 3V @ 250μA | 19.5A Tc | 16.5nC @ 10V | 5V 10V | ±25V | |||||||||||||||||||||||||||||||||||
| NVTFS5116PLTWG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/onsemiconductor-nvtfs5116pltwg-datasheets-7955.pdf | 8-PowerWDFN | Lead Free | 5 | 18 Weeks | 52MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | Halogen Free | YES | DUAL | FLAT | 8 | Single | 21W | 1 | Other Transistors | S-PDSO-F5 | 14 ns | 68ns | 36 ns | 24 ns | 6A | 20V | SILICON | DRAIN | 60V | 3.2W Ta 21W Tc | 6A | 45 mJ | -60V | P-Channel | 1258pF @ 25V | 52m Ω @ 7A, 10V | 3V @ 250μA | 6A Ta | 25nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||
| SI4058DY-T1-GE3 | Vishay Siliconix | $2.12 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | Non-RoHS Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-si4058dyt1ge3-datasheets-7329.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | EAR99 | e3 | Matte Tin (Sn) | NOT SPECIFIED | NOT SPECIFIED | 100V | 5.6W Tc | N-Channel | 690pF @ 50V | 26m Ω @ 10A, 10V | 2.8V @ 250μA | 10.3A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||
| NTMFS4837NHT1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-ntmfs4837nht1g-datasheets-8006.pdf | 8-PowerTDFN, 5 Leads | Lead Free | 6 | 16 Weeks | 8 | yes | EAR99 | No | e3 | Tin (Sn) | DUAL | FLAT | 260 | 8 | Single | 40 | 5.8W | 1 | R-PDSO-F6 | 19.6ns | 4.7 ns | 28 ns | 16A | 20V | SILICON | DRAIN | SWITCHING | 880mW Ta 48W Tc | 225A | 30V | N-Channel | 3016pF @ 12V | 5m Ω @ 30A, 10V | 2.5V @ 250μA | 10.2A Ta 75A Tc | 23.8nC @ 4.5V | 4.5V 11.5V | ±20V | ||||||||||||||||||||||||||
| SI4103DY-T1-GE3 | Vishay Siliconix | $0.62 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen III | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | /files/vishaysiliconix-si4103dyt1ge3-datasheets-7798.pdf | 8-SOIC (0.154, 3.90mm Width) | 14 Weeks | 8-SO | 30V | 2.5W Ta 5.2W Tc | P-Channel | 5200pF @ 15V | 7.9mOhm @ 10A, 10V | 2V @ 250μA | 14A Ta 16A Tc | 140nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| MCU10N10-TP | Micro Commercial Co |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/microcommercialco-mcu10n10tp-datasheets-7544.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 12 Weeks | 260 | 10 | 100V | N-Channel | 690pF @ 25V | 140m Ω @ 5A, 10V | 2.5V @ 250μA | 9.6A | 15.5nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SISH114ADN-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sish114adnt1ge3-datasheets-7794.pdf | PowerPAK® 1212-8SH | 14 Weeks | PowerPAK® 1212-8SH | 30V | 3.7W Ta 39W Tc | N-Channel | 1230pF @ 15V | 7.5mOhm @ 18A, 10V | 2.5V @ 250μA | 18A Ta 35A Tc | 32nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||
| TPH9R506PL,LQ | Toshiba Semiconductor and Storage | $0.87 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | U-MOSIX-H | Surface Mount | 175°C | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | 8-PowerVDFN | 16 Weeks | 60V | 830mW Ta 81W Tc | N-Channel | 1910pF @ 30V | 9.5m Ω @ 17A, 10V | 2.5V @ 200μA | 34A Tc | 21nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIRA12BDP-T1-GE3 | Vishay Siliconix | $1.41 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-sira12bdpt1ge3-datasheets-7801.pdf | PowerPAK® SO-8 | 14 Weeks | PowerPAK® SO-8 | 30V | 5W Ta 38W Tc | N-Channel | 1470pF @ 15V | 4.3mOhm @ 10A, 10V | 2.4V @ 250μA | 27A Ta 60A Tc | 32nC @ 10V | 4.5V 10V | +20V, -16V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| RQ1A070APTR | ROHM Semiconductor | $0.70 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | 8-SMD, Flat Lead | Lead Free | 8 | 20 Weeks | 8 | EAR99 | not_compliant | DUAL | NOT SPECIFIED | 8 | NOT SPECIFIED | 1 | 7A | SILICON | SINGLE WITH BUILT-IN DIODE | SWITCHING | 12V | 12V | 550mW Ta | 7A | 0.014Ohm | P-Channel | 7800pF @ 6V | 14m Ω @ 7A, 4.5V | 1V @ 1mA | 7A Ta | 80nC @ 4.5V | 1.5V 4.5V | -8V | |||||||||||||||||||||||||||||||||||
| BUK9M6R0-40HX | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/nexperiausainc-buk9m6r040hx-datasheets-7653.pdf | SOT-1210, 8-LFPAK33 (5-Lead) | 26 Weeks | 40V | 70W Ta | N-Channel | 2470pF @ 25V | 6m Ω @ 20A, 10V | 2.15V @ 1mA | 50A Ta | 36nC @ 10V | 4.5V 10V | +16V, -10V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SIAA00DJ-T1-GE3 | Vishay Siliconix | $0.39 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® Gen IV | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/vishaysiliconix-siaa40djt1ge3-datasheets-7512.pdf | PowerPAK® SC-70-6 | 14 Weeks | PowerPAK® SC-70-6 Single | 25V | 3.5W Ta 19.2W Tc | N-Channel | 1090pF @ 12.5V | 5.6mOhm @ 15A, 10V | 2.5V @ 250μA | 20.1A Ta 40A Tc | 24nC @ 10V | 4.5V 10V | +16V, -12V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| NTLUS3A40PZTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | µCool™ | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/onsemiconductor-ntlus3a40pztbg-datasheets-7084.pdf | 6-UDFN Exposed Pad | 2mm | 500μm | 2mm | Lead Free | 6 | 2 Weeks | 6 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | 6 | Single | 1.7W | 1 | Other Transistors | 9 ns | 18ns | 71 ns | 126 ns | 6.4A | 8V | SILICON | SWITCHING | 20V | 20V | 700mW Ta | 4A | 0.029Ohm | P-Channel | 2600pF @ 15V | 29m Ω @ 6.4A, 4.5V | 1V @ 250μA | 4A Ta | 29nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||
| TSM280NB06LCR RLG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | RoHS Compliant | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm280nb06lcrrlg-datasheets-7655.pdf | 8-PowerTDFN | 18 Weeks | compliant | NOT SPECIFIED | NOT SPECIFIED | 60V | 3.1W Ta 56W Tc | N-Channel | 969pF @ 30V | 28m Ω @ 7A, 10V | 2.5V @ 250μA | 7A Ta 28A Tc | 18nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||
| ECH8309-TL-H | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2010 | /files/onsemiconductor-ech8309tlh-datasheets-7473.pdf | 8-SMD, Flat Lead | 2.9mm | 900μm | 2.3mm | Lead Free | 4 Weeks | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | No | e6 | Tin/Bismuth (Sn/Bi) | Halogen Free | YES | 8 | Single | 1.5W | 1 | Other Transistors | 22 ns | 110ns | 123 ns | 157 ns | 9.5A | 10V | 12V | 1.5W Ta | P-Channel | 1780pF @ 6V | 16m Ω @ 4.5A, 4.5V | 9.5A Ta | 18nC @ 4.5V | 1.8V 4.5V | ±10V |
