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ContactSingle MOSFETs Transistors(33658)
| Compare | Image | Name | Manufacturer | Pricing(USD) | Quantity | Weight(Kg) | Size(LxWxH) | Part Status | Series | Mount | Mounting Type | Operating Temperature | Packaging | Moisture Sensitivity Level (MSL) | Termination | Technology | Operating Mode | RoHS Status | Published | Datasheet | Voltage - Rated DC | Current Rating | Package / Case | Length | Height | Width | Lead Free | Number of Terminations | Factory Lead Time | Weight | REACH SVHC | Resistance | Number of Pins | Lifecycle Status | Pbfree Code | Thickness | ECCN Code | Additional Feature | Contact Plating | Radiation Hardening | Current | Reach Compliance Code | JESD-609 Code | Terminal Finish | Voltage | Reference Standard | Surface Mount | Terminal Position | Terminal Form | Peak Reflow Temperature (Cel) | Base Part Number | Pin Count | Number of Channels | Element Configuration | Time@Peak Reflow Temperature-Max (s) | Power Dissipation | Number of Elements | Subcategory | Max Junction Temperature (Tj) | JESD-30 Code | Turn On Delay Time | Rise Time | Fall Time (Typ) | Turn-Off Delay Time | Continuous Drain Current (ID) | Gate to Source Voltage (Vgs) | Max Dual Supply Voltage | Dual Supply Voltage | Transistor Element Material | Configuration | Case Connection | Transistor Application | Drain to Source Voltage (Vdss) | DS Breakdown Voltage-Min | Threshold Voltage | Power Dissipation-Max | JEDEC-95 Code | Recovery Time | Drain Current-Max (Abs) (ID) | Pulsed Drain Current-Max (IDM) | Drain-source On Resistance-Max | Feedback Cap-Max (Crss) | Avalanche Energy Rating (Eas) | Drain to Source Breakdown Voltage | FET Type | Input Capacitance (Ciss) (Max) @ Vds | Nominal Vgs | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Gate Charge (Qg) (Max) @ Vgs | Drive Voltage (Max Rds On,Min Rds On) | Vgs (Max) |
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| BUK9Y53-100B,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101, TrenchMOS™ | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/nexperiausainc-buk9y53100b115-datasheets-5148.pdf | SC-100, SOT-669 | 6.35mm | 6.35mm | 6.35mm | 4 | 12 Weeks | 4.535924g | 4 | LOGIC LEVEL COMPATIBLE | Tin | not_compliant | e3 | YES | GULL WING | 4 | Single | 75W | 1 | 18 ns | 26ns | 16 ns | 52 ns | 23A | 15V | 100V | SILICON | DRAIN | SWITCHING | 75W Tc | MO-235 | 0.059Ohm | 85 mJ | 100V | N-Channel | 2130pF @ 25V | 49m Ω @ 10A, 10V | 2V @ 1mA | 23A Tc | 18nC @ 5V | 4.5V 10V | ±15V | |||||||||||||||||||||||||||||||||||||
| CMUDM7004 TR PBFREE | Central Semiconductor Corp |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -65°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/centralsemiconductorcorp-cmudm7004trpbfree-datasheets-4406.pdf | SOT-523 | 49 Weeks | YES | FET General Purpose Power | Single | 30V | 250mW Ta | 0.45A | N-Channel | 45pF @ 25V | 460m Ω @ 200mA, 4.5V | 1V @ 250μA | 450mA Ta | 0.79nC @ 4.5V | 1.8V 4.5V | 8V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI4128DY-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si4128dyt1ge3-datasheets-4479.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 14 Weeks | 186.993455mg | Unknown | 24mOhm | 8 | EAR99 | No | e3 | MATTE TIN | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 5W | 1 | 15 ns | 12ns | 10 ns | 15 ns | 10.9A | 20V | SILICON | SWITCHING | 1V | 2.4W Ta 5W Tc | 30V | N-Channel | 435pF @ 15V | 24m Ω @ 7.8A, 10V | 2.5V @ 250μA | 10.9A Ta | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||
| AOD442 | Alpha & Omega Semiconductor Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/alphaomegasemiconductor-aod442-datasheets-2513.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | Lead Free | 2 | 3 | No | SINGLE | GULL WING | 60W | 1 | FET General Purpose Power | R-PSSO-G2 | 37A | 20V | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 2.1W Ta 60W Tc | 60A | 0.025Ohm | 45 mJ | N-Channel | 2300pF @ 30V | 20m Ω @ 20A, 10V | 2.7V @ 250μA | 7A Ta 37A Tc | 68nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||||||||||||
| DMP2022LSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/diodesincorporated-dmp2022lss13-datasheets-5302.pdf | 8-SOIC (0.154, 3.90mm Width) | 5.3mm | 1.5mm | 4.1mm | 8 | 19 Weeks | 850.995985mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | Tin | No | e3 | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 7.5 ns | 9.9ns | 76.5 ns | 108 ns | 10A | 12V | SILICON | SWITCHING | 20V | 20V | 770mV | 2.5W Ta | 35A | P-Channel | 2444pF @ 10V | 13m Ω @ 10A, 10V | 1.1V @ 250μA | 10A Ta | 56.9nC @ 10V | 2.5V 10V | ±12V | ||||||||||||||||||||||||||||||||
| FDS6680A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | SMD/SMT | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/onsemiconductor-fds6680a-datasheets-5350.pdf | 30V | 12.5A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 9.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 10 ns | 5ns | 15 ns | 27 ns | 12.5A | 20V | 30V | SILICON | SWITCHING | 2V | 2.5W Ta | 28 ns | 30V | N-Channel | 1620pF @ 15V | 2 V | 9.5m Ω @ 12.5A, 10V | 3V @ 250μA | 12.5A Ta | 23nC @ 5V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| FDD8778 | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2006 | /files/onsemiconductor-fdd8778-datasheets-5422.pdf | 25V | 35A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.73mm | 2.39mm | 6.22mm | Lead Free | 2 | 10 Weeks | 260.37mg | No SVHC | 14MOhm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | Tin | No | e3 | GULL WING | 260 | Single | 30 | 39W | 1 | FET General Purpose Power | R-PSSO-G2 | 6 ns | 22ns | 32 ns | 43 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 1.5V | 39W Tc | TO-252AA | 24 mJ | 25V | N-Channel | 845pF @ 13V | 1.5 V | 14m Ω @ 35A, 10V | 2.5V @ 250μA | 35A Tc | 18nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||
| CSD17577Q3A | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 8-PowerVDFN | 3.3mm | 900μm | 3.3mm | Lead Free | 5 | 6 Weeks | 8 | ACTIVE (Last Updated: 1 week ago) | yes | 800μm | EAR99 | AVALANCHE RATED | Tin | e3 | DUAL | FLAT | 260 | CSD17577 | 1 | Single | NOT SPECIFIED | 53W | 1 | 150°C | 4 ns | 31ns | 4 ns | 20 ns | 35A | 20V | SILICON | DRAIN | SWITCHING | 30V | 30V | 2.8W Ta 53W Tc | 239A | 39 mJ | N-Channel | 2310pF @ 15V | 4.8m Ω @ 16A, 10V | 1.8V @ 250μA | 35A Ta | 35nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||
| CSD17313Q2Q1 | Texas Instruments |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q100, NexFET™ | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | https://pdf.utmel.com/r/datasheets/texasinstruments-csd17313q2q1-datasheets-2467.pdf | 6-WDFN Exposed Pad | 2mm | 2mm | Lead Free | 6 | No SVHC | 6 | NRND (Last Updated: 5 days ago) | yes | 750μm | EAR99 | AVALANCHE RATED | No | e3 | Matte Tin (Sn) | DUAL | 260 | CSD17313 | Single | 2.3W | 1 | FET General Purpose Powers | 2.8 ns | 3.9ns | 1.3 ns | 4.2 ns | 5A | 10V | SILICON | DRAIN | SWITCHING | 1.3V | 2.3W Ta | 5A | 57A | 0.042Ohm | 30V | N-Channel | 340pF @ 15V | 30m Ω @ 4A, 8V | 1.8V @ 250μA | 5A Tc | 2.7nC @ 4.5V | 3V 8V | +10V, -8V | |||||||||||||||||||||||||||||||||
| SI3473CDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2015 | /files/vishaysiliconix-si3473cdvt1ge3-datasheets-5198.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | 6 | 14 Weeks | 19.986414mg | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 10 ns | 15ns | 35 ns | 62 ns | 8A | 8V | SILICON | SWITCHING | 12V | 2W Ta 4.2W Tc | 8A | 0.022Ohm | -12V | P-Channel | 2010pF @ 6V | 22m Ω @ 8.1A, 4.5V | 1V @ 250μA | 8A Tc | 65nC @ 8V | 1.8V 4.5V | ±8V | |||||||||||||||||||||||||||||||||
| MTM232230LBF | Panasonic Electronic Components | $0.66 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | 150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | DEPLETION MODE | RoHS Compliant | 2011 | https://pdf.utmel.com/r/datasheets/panasonicelectroniccomponents-mtm232230lbf-datasheets-5277.pdf | SC-70, SOT-323 | 2mm | 900μm | 1.25mm | 3 | 10 Weeks | No SVHC | 3 | EAR99 | e6 | Tin/Bismuth (Sn/Bi) | DUAL | GULL WING | NOT SPECIFIED | Single | NOT SPECIFIED | 1 | 16 ns | 220 ns | 4.5A | 10V | SILICON | SWITCHING | 850mV | 500mW Ta | 0.028Ohm | 20V | N-Channel | 1200pF @ 10V | 850 mV | 28m Ω @ 1A, 4V | 1.3V @ 1mA | 4.5A Ta | 2.5V 4.5V | ±10V | ||||||||||||||||||||||||||||||||||||||||||
| BSP130,115 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2001 | /files/nexperiausainc-bsp130115-datasheets-4748.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 4 Weeks | 4.535924g | No SVHC | 6Ohm | 3 | Tin | No | e3 | YES | DUAL | GULL WING | 260 | 4 | Single | 30 | 1.5W | 1 | R-PDSO-G4 | 350mA | 20V | 300V | SILICON | DRAIN | SWITCHING | 2V | 1.5W Ta | 300V | N-Channel | 120pF @ 25V | 2 V | 6 Ω @ 250mA, 10V | 2V @ 1mA | 350mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||||||||||
| DMP4050SSS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/diodesincorporated-dmp4050sss13-datasheets-5317.pdf | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 17 Weeks | 73.992255mg | No SVHC | 8 | yes | EAR99 | HIGH RELIABILITY | No | e3 | Matte Tin (Sn) | DUAL | GULL WING | 260 | 8 | 1 | Single | 40 | 2.8W | 1 | Other Transistors | 1.9 ns | 3.1ns | 12.6 ns | 31.5 ns | 6A | 20V | SILICON | SWITCHING | 40V | 1.56W Ta | 4.4A | 0.05Ohm | -40V | P-Channel | 674pF @ 20V | 50m Ω @ 6A, 10V | 3V @ 250μA | 4.4A Ta | 13.9nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FQD1N60CTM | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | QFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2003 | /files/onsemiconductor-fqd1n60ctm-datasheets-5234.pdf | 600V | 1A | TO-252-3, DPak (2 Leads + Tab), SC-63 | 6.6mm | 2.3mm | 6.1mm | Lead Free | 2 | 5 Weeks | 260.37mg | No SVHC | 11.5Ohm | 3 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | AVALANCHE RATED | No | e3 | Tin (Sn) | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | R-PSSO-G2 | 7 ns | 21ns | 27 ns | 13 ns | 1A | 30V | SILICON | DRAIN | SWITCHING | 2V | 2.5W Ta 28W Tc | 1A | 4A | 600V | N-Channel | 170pF @ 25V | 11.5 Ω @ 500mA, 10V | 4V @ 250μA | 1A Tc | 6.2nC @ 10V | 10V | ±30V | |||||||||||||||||||||||||||||
| TSM170N06CP ROG | Taiwan Semiconductor Corporation |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Digi-Reel® | 3 (168 Hours) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2015 | https://pdf.utmel.com/r/datasheets/taiwansemiconductorcorporation-tsm170n06cprog-datasheets-5366.pdf | TO-252-3, DPak (2 Leads + Tab), SC-63 | 20 Weeks | 60V | 46W Tc | N-Channel | 900pF @ 25V | 17m Ω @ 20A, 10V | 2.5V @ 250μA | 38A Tc | 28.5nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI1499DH-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si1499dht1e3-datasheets-4944.pdf | 6-TSSOP, SC-88, SOT-363 | 2mm | 1mm | 1.25mm | Lead Free | 6 | 14 Weeks | 7.512624mg | Unknown | 78mOhm | 6 | yes | EAR99 | No | e3 | Matte Tin (Sn) | DUAL | FLAT | 260 | 6 | 1 | Single | 40 | 2.5W | 1 | Other Transistors | 8 ns | 40ns | 60 ns | 46 ns | 1.6A | 5V | SILICON | SWITCHING | 8V | 8V | -800mV | 2.5W Ta 2.78W Tc | P-Channel | 650pF @ 4V | -800 mV | 78m Ω @ 2A, 4.5V | 800mV @ 250μA | 1.6A Tc | 16nC @ 4.5V | 1.2V 4.5V | ±5V | ||||||||||||||||||||||||||||||
| BS250FTA | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Cut Tape (CT) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1997 | /files/diodesincorporated-bs250fta-datasheets-4919.pdf | -45V | -90mA | TO-236-3, SC-59, SOT-23-3 | 2.9mm | 1mm | 1.3mm | Lead Free | 3 | 17 Weeks | 7.994566mg | No SVHC | 14Ohm | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 40 | 330mW | 1 | Other Transistors | 10 ns | 10ns | 10 ns | 10 ns | 90mA | 20V | SILICON | SWITCHING | 45V | -3.5V | 330mW Ta | 0.09A | P-Channel | 25pF @ 10V | -3.5 V | 14 Ω @ 200mA, 10V | 3.5V @ 1mA | 90mA Ta | 10V | ±20V | ||||||||||||||||||||||||||||||
| DMP6050SPS-13 | Diodes Incorporated |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2018 | /files/diodesincorporated-dmp6050sps13-datasheets-5158.pdf | 8-PowerTDFN | 5 | 17 Weeks | EAR99 | not_compliant | e3 | Matte Tin (Sn) | YES | DUAL | FLAT | 260 | 30 | 1 | R-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | SWITCHING | 60V | 60V | 1.3W | 5.7A | 45A | 0.05Ohm | 32 mJ | P-Channel | 2.163nF @ 30V | 50m Ω @ 5A, 10V | 3V @ 250μA | 5.7A Ta | 30nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| NVF3055L108T1G | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Automotive, AEC-Q101 | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2005 | /files/onsemiconductor-ntf3055l108t1g-datasheets-8182.pdf | TO-261-4, TO-261AA | 6.7mm | 1.65mm | 3.7mm | Lead Free | 4 | 20 Weeks | 120MOhm | 4 | ACTIVE (Last Updated: 1 week ago) | yes | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 4 | Single | 2.1W | 1 | FET General Purpose Power | 11 ns | 35ns | 27 ns | 22 ns | 3A | 15V | SILICON | DRAIN | SWITCHING | 1.3W Ta | 3A | 9A | 60V | N-Channel | 440pF @ 25V | 120m Ω @ 1.5A, 5V | 2V @ 250μA | 3A Ta | 15nC @ 5V | 5V | ±15V | ||||||||||||||||||||||||||||||||||
| PHT6NQ10T,135 | Nexperia USA Inc. |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchMOS™ | Surface Mount | -65°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 1999 | /files/nexperiausainc-pht6nq10t135-datasheets-5212.pdf | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 4 Weeks | 4 | EAR99 | No | e3 | Tin (Sn) | YES | DUAL | GULL WING | 260 | 4 | Single | 30 | 1.8W | 1 | 6 ns | 15ns | 15 ns | 20 ns | 3A | 20V | 100V | SILICON | DRAIN | SWITCHING | 1.8W Ta 8.3W Tc | 3A | 26A | 0.09Ohm | 100V | N-Channel | 633pF @ 25V | 90m Ω @ 3A, 10V | 4V @ 1mA | 3A Ta | 21nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||||
| IRFM120ATF | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2002 | /files/onsemiconductor-irfm120atf-datasheets-4874.pdf | 100V | 2.3A | TO-261-4, TO-261AA | 6.7mm | 1.7mm | 3.7mm | Lead Free | 4 | 10 Weeks | 188mg | No SVHC | 200MOhm | 3 | ACTIVE (Last Updated: 3 days ago) | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | Single | 2.4W | 1 | FET General Purpose Power | R-PDSO-G4 | 14 ns | 14ns | 28 ns | 36 ns | 2.3A | 20V | SILICON | DRAIN | SWITCHING | 4V | 2.4W Ta | 100V | N-Channel | 480pF @ 25V | 200m Ω @ 1.15A, 10V | 4V @ 250μA | 2.3A Ta | 22nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFL014NTRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2004 | /files/infineontechnologies-irfl014ntrpbf-datasheets-4955.pdf | 55V | 1.9A | TO-261-4, TO-261AA | 6.6802mm | 1.4478mm | 3.7mm | Lead Free | 4 | 12 Weeks | No SVHC | 160mOhm | 3 | EAR99 | AVALANCHE RATED, HIGH RELIABILITY | No | DUAL | GULL WING | Single | 2.1W | 1 | FET General Purpose Power | R-PDSO-G4 | 6.6 ns | 7.1ns | 3.3 ns | 12 ns | 1.9A | 20V | SILICON | DRAIN | SWITCHING | 4V | 1W Ta | 61 ns | 2.7A | 55V | N-Channel | 190pF @ 25V | 4 V | 160m Ω @ 1.9A, 10V | 4V @ 250μA | 1.9A Ta | 11nC @ 10V | 10V | ±20V | ||||||||||||||||||||||||||||||||
| IRFHS9301TRPBF | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | HEXFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2010 | /files/infineontechnologies-irfhs9301trpbf-datasheets-3985.pdf | 6-PowerVDFN | 2.1mm | 950μm | 2.1mm | Lead Free | 6 | 12 Weeks | No SVHC | 37MOhm | 6 | EAR99 | No | DUAL | Single | 2.1W | 1 | 12 ns | 80ns | 25 ns | 13 ns | 6A | 20V | SILICON | DRAIN | SWITCHING | 30V | -1.8V | 2.1W Ta | 6A | 52A | -30V | P-Channel | 580pF @ 25V | -1.8 V | 37m Ω @ 7.8A, 10V | 2.4V @ 25μA | 6A Ta 13A Tc | 13nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||||||||
| NVTFS5C478NLWFTAG | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | Surface Mount | -55°C~175°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2012 | /files/onsemiconductor-nvtfs5c478nlwftag-datasheets-4770.pdf | 8-PowerWDFN | 5 | 18 Weeks | ACTIVE (Last Updated: 4 days ago) | yes | not_compliant | e3 | Tin (Sn) | AEC-Q101 | YES | DUAL | FLAT | NOT SPECIFIED | NOT SPECIFIED | 1 | S-PDSO-F5 | SILICON | SINGLE WITH BUILT-IN DIODE | DRAIN | 40V | 40V | 20W Tc | 104A | 0.025Ohm | 43 mJ | N-Channel | 400pF @ 25V | 14m Ω @ 5A, 10V | 2.2V @ 20μA | 26A Tc | 3.8nC @ 4.5V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||
| SI2328DS-T1-GE3 | Vishay Siliconix | $2.81 |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2013 | /files/vishaysiliconix-si2328dst1ge3-datasheets-5062.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | No SVHC | 3 | yes | EAR99 | Tin | No | e3 | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 730mW | 1 | FET General Purpose Powers | 7 ns | 11ns | 10 ns | 9 ns | 1.15A | 20V | SILICON | 100V | 4V | 730mW Ta | 0.25Ohm | N-Channel | 250m Ω @ 1.5A, 10V | 4V @ 250μA | 1.15A Ta | 5nC @ 10V | 10V | ±20V | |||||||||||||||||||||||||||||||||
| IPN50R650CEATMA1 | Infineon Technologies |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | CoolMOS™ CE | Surface Mount | -40°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ROHS3 Compliant | 2012 | https://pdf.utmel.com/r/datasheets/infineontechnologies-ipn50r650ceatma1-datasheets-5065.pdf | SOT-223-3 | 18 Weeks | No SVHC | 3 | yes | EAR99 | not_compliant | e3 | Tin (Sn) | 9A | 500V | 3V | 5W Tc | N-Channel | 342pF @ 100V | 650m Ω @ 1.8A, 13V | 3.5V @ 150μA | 9A Tc | 15nC @ 10V | 13V | ±20V | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| SI3459BDV-T1-GE3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | /files/vishaysiliconix-si3459bdvt1ge3-datasheets-5068.pdf | SOT-23-6 Thin, TSOT-23-6 | 3.05mm | 1mm | 1.65mm | Lead Free | 6 | 14 Weeks | 19.986414mg | Unknown | 216MOhm | 6 | yes | EAR99 | No | e3 | PURE MATTE TIN | DUAL | GULL WING | 260 | 6 | 1 | Single | 30 | 2W | 1 | Other Transistors | 5 ns | 12ns | 10 ns | 18 ns | -2.2A | 20V | SILICON | SWITCHING | 60V | -3V | 2W Ta 3.3W Tc | 0.0022A | 30 pF | P-Channel | 350pF @ 30V | -3 V | 216m Ω @ 2.2A, 10V | 3V @ 250μA | 2.9A Tc | 12nC @ 10V | 4.5V 10V | ±20V | ||||||||||||||||||||||||||||||
| SI2316DS-T1-E3 | Vishay Siliconix |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | TrenchFET® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2011 | /files/vishaysiliconix-si2316dst1e3-datasheets-5080.pdf | TO-236-3, SC-59, SOT-23-3 | 3.04mm | 1.02mm | 1.4mm | Lead Free | 3 | 14 Weeks | 1.437803g | Unknown | 50mOhm | 3 | yes | EAR99 | No | 2A | e3 | Matte Tin (Sn) | 30V | DUAL | GULL WING | 260 | 3 | 1 | Single | 30 | 700mW | 1 | FET General Purpose Power | 9 ns | 9ns | 9 ns | 14 ns | 3.4A | 20V | SILICON | SWITCHING | 700mW Ta | N-Channel | 215pF @ 15V | 800 mV | 50m Ω @ 3.4A, 10V | 800mV @ 250μA (Min) | 2.9A Ta | 7nC @ 10V | 4.5V 10V | ±20V | |||||||||||||||||||||||||||||||
| FDMA510PZ | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2009 | /files/onsemiconductor-fdma510pz-datasheets-5083.pdf | 6-VDFN Exposed Pad | 2mm | 750μm | 2mm | Lead Free | 6 | 16 Weeks | 30mg | No SVHC | 30MOhm | 6 | ACTIVE (Last Updated: 4 days ago) | yes | EAR99 | Gold | No | e4 | DUAL | Single | 2.4W | 1 | Other Transistors | 7 ns | 9ns | 64 ns | 125 ns | -7.8A | 8V | SILICON | DRAIN | SWITCHING | 20V | -700mV | 2.4W Ta | 24A | -20V | P-Channel | 1480pF @ 10V | -700 mV | 30m Ω @ 7.8A, 4.5V | 1.5V @ 250μA | 7.8A Ta | 27nC @ 4.5V | 1.5V 4.5V | ±8V | ||||||||||||||||||||||||||||||||
| FDS6690A | ON Semiconductor |
Min: 1 Mult: 1 |
0 | 0x0x0 | download | PowerTrench® | Surface Mount | Surface Mount | -55°C~150°C TJ | Tape & Reel (TR) | 1 (Unlimited) | MOSFET (Metal Oxide) | ENHANCEMENT MODE | ROHS3 Compliant | 2007 | /files/onsemiconductor-fds6690a-datasheets-5118.pdf | 30V | 11A | 8-SOIC (0.154, 3.90mm Width) | 5mm | 1.5mm | 4mm | Lead Free | 8 | 18 Weeks | 130mg | No SVHC | 12.5MOhm | 8 | ACTIVE (Last Updated: 1 day ago) | yes | EAR99 | LOGIC LEVEL COMPATIBLE | Tin | No | e4 | Nickel/Palladium/Gold (Ni/Pd/Au) | DUAL | GULL WING | Single | 2.5W | 1 | FET General Purpose Power | 9 ns | 5ns | 9 ns | 28 ns | 11A | 20V | 30V | SILICON | SWITCHING | 1.9V | 2.5W Ta | 30V | N-Channel | 1205pF @ 15V | 12.5m Ω @ 11A, 10V | 3V @ 250μA | 11A Ta | 16nC @ 5V | 4.5V 10V | ±20V |
