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ContactIRFL014NTRPBF
IRFL014NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi
- Manufacturer: Infineon Technologies
- NO: 376-IRFL014NTRPBF
- Package: TO-261-4, TO-261AA
- Datasheet:
- Stock: 9511
- Description: IRFL014NTRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Threshold Voltage | 4V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 2.7A |
| Drain to Source Breakdown Voltage | 55V |
| Recovery Time | 61 ns |
| Nominal Vgs | 4 V |
| Height | 1.4478mm |
| Length | 6.6802mm |
| Width | 3.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Number of Pins | 3 |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | HEXFET® |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Resistance | 160mOhm |
| Additional Feature | AVALANCHE RATED, HIGH RELIABILITY |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 55V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 1.9A |
| JESD-30 Code | R-PDSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 1W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 6.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 160m Ω @ 1.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 190pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Rise Time | 7.1ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.3 ns |
| Turn-Off Delay Time | 12 ns |
| Continuous Drain Current (ID) | 1.9A |
IRFL014NTRPBF Description
The IRFL014NTRPBF is a HEXFET? single N-channel Power MOSFET that utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design provides an extremely efficient and reliable operation for use in a wide variety of applications. IRFL014NTRPBF is designed for surface-mount using vapour phase, infrared, or wave soldering techniques. Power dissipation of 1W is possible in a typical surface-mount application.
IRFL014NTRPBF Features
Surface Mount
Advanced Process Technology
Ultra-Low On-Resistance
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Lead-Free
IRFL014NTRPBF Applications
Power Management
DC to DC Converter
Switched Mode Power Supplies
Commercial and Industrial Applications
Fast Switching
Amplification Purpose
